Triethanolamine (TEA) is a semiconducting polymer which exhibits a resistance change when exposed to various gases. The polymer also exhibits a number of reactions with nitrogen dioxide, with the reaction products being heavily dependent on the presence or absence of water vapor. Previous studies have attempted the incorporation of a TEA-carbon nanoparticle composite as the active sensing layer in a chemresistive sensor for detection of NO₂. The incorporation of carbon nanoparticles in the polymer nanocomposite was thought to amplify the sensor's response. There are a number of chemical reactions that can occur between TEA and NO₂, with the reaction products being heavily dependent on the presence and amount of water vapor in the environment. Because of this influence, it becomes necessary to know to what degree the presence of water vapor interferes with the sensing response. In this work we show that the sensor exhibits a reversible resistance change as background humidity changes. This sensitivity to humidity changes is so large that it renders undetectable any resistance change that could be caused by the reaction of TEA with NO₂. Furthermore, we show that the presence of low levels of NO₂ do not interfere with adsorption of water vapor. The detection mechanism is based on measuring resistance changes in the TEA film due to the adsorption/desorption of water vapor. The sensing response can be described by Langmuir adsorption by using a site-based model for the polymer film resistance. Breakdown of the polymer film over time due to continuous adsorption of water vapor, as well as photodegradation of the polymer film, will be discussed. SEM images will also be presented showing growth of crystallites on the electrode walls, as well as experimental results demonstrating degradation of the sensing film during sensor operation.

High speed photodetectors are a necessary element in broad band digital and analog optical communication systems. In this thesis easily integrable planar high speed photodetectors made on undoped semi-insulating (SI) GaAs substrates are modeled and tested. The fabrication process of the detectors is fully compatible with GaAs metal-semiconductor field effect transistor (MESFET) processing technology. Interdigitated fingers are used as the contacts to achieve both high sensitivity and large bandwidth. Detectors made with both ohmic and Schottky contacts are fabricated and tested. The equivalent circuit elements of the interdigitated structure are modeled using accurate lumped element circuit models associated with the various discontinuities of the structure. The results of the model agree well with the experimental results as well as with other published results. Numerical simulation of the SI-GaAs metal-semiconductor- metal (MSM) photodetector is performed. The carriers are tracked after an ideal optical pulse is applied and the intrinsic current as a function of time is computed. Then the influence of all the external circuit elements is included and the output current across the load resistor is computed. The simulated response is compared with other published models. The electrical and optical characteristics of the detectors are measured. For ohmic contact detectors, the dark current increases linearly with bias until some critical field is reached beyond which the dark current increases nonlinearly with bias. The time response of the detectors is measured with a 10 ps pulsed laser operating at - 600 nm and also with a pulsed GaAs /AlGaAs semiconductor laser operating at 850 nm. The ohmic and Schottky contact detectors have approximately the same rise time. The fall time of the Schottky contact detector is much smaller than the fall time of ohmic contact detector. The long fall time of the ohmic detector does not depend on the spacing between contacts. This long fall time is due to the large barrier that exists near the ohmic metal/SI-GaAs cathode contact. No such barrier exists for SI-GaAs MSM photodetector. The simulated impulse response of the SI-GaAs MSM photodetector is compared with the measured impulse response. / Graduation date: 1991

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Bibliography: leaves 188-203. / xxii, 203 leaves : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / In this thesis insect vision principles are applied to the main mechanism for motion detection. Advanced VLSI technologies are employed for designing smart micro-sensors in which the imager and processor are integrated into one monolithic device. / Thesis (Ph.D.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1996

A sensor is described which utilizes the phenomenon of surface plasmon resonance to detect changes in refractive index of chemical or biochemical samples applied to a surface modified optical fiber. The sensor is constructed by polishing a short section of the lateral surface of an optical fiber to its evanescent field surrounding the fiber core. One or more thin films are applied to the polished section of the fiber to produce the sensing element. One of the films is the metal silver, which acts as the support for the surface plasmon. Under the proper conditions, TM polarized energy propagating in the fiber can be coupled to a surface plasmon electromagnetic mode on the metal film. This coupling depends on the wavelength, the nature of the fiber, the refractive index and thickness of the thin films applied to the fiber, and the refractive index of a chemical sample in contact with the modified surface. The fiber to plasmon coupling is seen as a large attenuation of the light reaching the distal terminus of the fiber. / Ph. D.

Increased interest in the field of sensor technology stems from the availability of an inexpensive and robust sensor to detect and quantify the presence of a specific gas. Bulk p-CuO/n-ZnO heterocontact based gas sensors have been shown to exhibit the necessary sensitivity and selectivity characteristics, however, low interfacial CuO/ZnO contact area and poor CuO/ZnO connectivity limits their effective use as gas sensors. The phase equilibria between CuO and ZnO exhibits limited solubility. By exploiting this concept, a CuO/ZnO mixed solution is formed by combining CuO and ZnO precursors using wet chemical (sol-gel) techniques. Thin films fabricated using this mixed solution exhibit a unique CuO/ZnO microstructure such that ZnO grains are surrounded by a network of CuO grains. This is highly beneficial in gas sensing applications since the CuO/ZnO heterostructure interfacial area is considerably increased and is expected to enhance sensing characteristics. This work builds on previous research by Dandeneau et al. (Thin film chemical sensors based on p-CuO/n-ZnO heterocontacts, Thin Solid Films, 2008). CuO/ZnO mixed solution thin films are fabricated using the sol-gel technique and subsequently characterized. X-ray diffraction (XRD) data confirms the phase separation between ZnO and CuO grains. Scanning electron microscopy (SEM) as well as energy dispersive spectroscopy (EDS) reveal a network of ZnO grains amidst a matrix of CuO grains. Optical and electrical characterization provide material parameters used to construct an energy band diagram for the CuO/ZnO heterostructure. Aluminum interdigitated electrodes (IDEs) are patterned on the thin film and gas sensing characteristics in the presence of oxygen and hydrogen are investigated. Optimization of the electrode geometry is explored with the aim of increasing the sensitivity of the sensor in the presence of hydrogen gas. / Graduation date: 2010

Changes in the gait characteristics, such as walking speed and stride length, of a person living at home can be used to presage cognitive decline, predict fall potential, monitor long-term changes in cognitive impairment, test drug regimens, and more. This thesis presents a novel approach to gait analysis in a smart-home environment by leveraging new advances in inexpensive sensors and embedded systems to create novel solutions for in-home gait analysis. Using a simple, non-invasive hardware system consisting entirely of wall-mounted infrared and radio frequency sensor arrays, data is collected on the gait of subjects as they pass by. This data is then analyzed and sent to a clinician for further study. The system is non-invasive in that it does not use cameras and could be built into the molding of a home so that it would be nearly invisible. In a finished prototype version, the system presented in this thesis could be used to analyze the gait characteristics of one or more subjects living in a home environment while ignoring the data of visitors and other non-subject cohabitants. The ability to constantly collect data from a home environment could provide thousands of observations per year for clinical analysis. Providing such a robust data set may allow people with gait impairment to live at home longer and more safely before transitioning to a care facility, have a reduced fall risk due to better prediction, and live a healthier life in old age.

This document describes the design and deployment of a first generation water vapor density sensing unit, the HumiSense. This device is based on an open, air-filled capacitor which is part of a resonant circuit. The frequency of the resonant circuit mixed with a fixed frequency oscillator is the basis of the method to generate a signal that is associated to the change in water vapor density within the open capacitor with time. The physical testing results were inconclusive given that there were many unresolved artifacts in the data. Several suggestions for improving the device for future device generations were provided. / Graduation date: 2013

Trends toward increased integration and miniaturization of optical system components have created pressure to consolidate widely disparate analog and digital functions onto fewer and fewer chips with a goal of eventually built into a single mixed-signal chip. Yet, because of those performance requirements, the frontend circuit has traditionally used III-V compound semiconductor technologies, but the low-level of integration with other digital ICs limits the sustainability of such end products for short-distance applications. On the other hand, their CMOS counter parts, despite having such advantages as low power consumption, high yield that lowers the cost of fabrication, and a higher degree of integration, have not performed well enough to survive in such a noisy environment without sacrificing other important attributes. In this research, a high-speed CMOS preamplifier was designed and fabricated through TSMC 0.18/spl mu/m mixed-signal non-epi CMOS technology, and a 20/spl mu/m diameter InGaAs thin-film Inverted-MSM photodetector with a responsivity of 0.15A/W at a wavelength of 1550/spl mu/m was post-integrated onto the circuit. The circuit has a overall transimpedance gain of 60dB/spl Omega/, and bit-error-rate data and eye-diagram measurement results taken as high as 10Gbit/s are reported in this dissertation.