Neste trabalho reportamos numerosas medidas de correntes devido á condutividade induzida por raios-x, durante e após a irradiação em amostras de filme de PVF2. Uma série de paramêtros de medidas foram variados, tais como: o campo elétrico, a taxa de radiação, o tipo de eletrodo, as condições atmosféricas das medidas e a espessura das atmosferas. Foram também feitas medidas de correntes de cargas e descarga de Absorção Dielétrica em ar úmido, em ar seco, em argônio e no vácuo. Curvas de correntes termo-estimuladas em amostras irradiadas e não-irradiadas permitiram verificar a presença de armadilhas no material, e também obter parâmetros dessas armadilhas. Finalmente desenvolveu-se modelo teórico e calculou-se curvas características para as correntes induzidas que concordaram com as curvas experimentais. O ajuste das curvas permitiu a determinação de valores numéricos para parâmetros de material. / We measured the radiation induced conductivity (RIC), prompt and delayed, in PVDF films under varied conditions, such as: electric fields, dose rate, electrode material, atmospheric environment and sample thickness. Polarization and depolarization absorption currents were also measured in dry and wet air, in argon and vacuum. Thermostimulated current measurements were carried out in irradiate samples showing that excited charges maybe captured by traps. Analysis of these currents led to the evaluation of the trap parameters. A model was developed in order interpret the transient RIC, assuming trapping, detrapping, recombination centers and also taking into account the extraction time.

Neste trabalho obtivemos curvas de corrente induzida por raios-x no teflon FEP que apresentou as seguintes características: a) Inicialmente a corrente subiu, atingindo um máximo em torno dos 10s; b) Decaiu lentamente durante aproximadamente meia-hora, e; c) Atingiu um estado estacionário daí por diante. Ao se desligar a radiação, registrou-se a componente atrasada desta corrente. Usamos amostras de 25&#956m de espessura e área irradiada foi de 12,5cm2 ; o campo aplicado da ordem de 104V/cm e taxa de exposição da ordem de 102 R/S. Verificamos que depois de completada de uma medida da corrente induzida num amostra, esta não voltava a se repetir se realizada depois algumas horas; a corrente então não apresentava um máximo, indo diretamente ao valor estacionário; porém se recuperava com o tempo, repetindo a primeira medida depois de algumas semanas. Para mostrar que esta subida e descida da corrente induzida, não era devido a um efeito de campo, realizamos uma medida onde aplicamos o campo intermitente por curtos períodos de tempo, enquanto a amostra era irradiada. O resultado se mostrou igual aos realizados com tensão aplicada permanentemente. Estudamos ainda a dependência da condutividade induzida com a taxa de exposição e com o campo. Finalmente construímos um modelo teórico para o material que permitiu a obtenção de parâmetros do mesmo concordantes com o esperado. Acrescentamos a este trabalho uma curva que mostra o efeito da variação da temperatura sobre uma medida longa da absorção dielétrica. / In this work we measured X-ray indeuced currents in teflon FEP wich show the following features: a) At the beginning the current increases and reaches a maximum at about 10s; b) It decays slowly during 30 minutes, when a steady state is reached slowly during 30 minutes, when a steady state is reached the delayed conductvity was also measured. The sample were 25&#956m thick and the irradiated área was 12,5cm2; the applied field was of the order of 104 V/cm and the dose rate of the order of 102 R/S. It was observed that a new measurement of the induced conductivity does not duplicate the first one, but after a few hours it come backs to the original one. In order to show that the increase and the deacrease of the current is not caused by na electric field effect we realized a measurement where we polled the sample intermitently while it was irradiated. The current thus obtained had about the same values of the first measuments, when the voltage was applied all the time during the measurement. We also measured the absorption current f a teflon sample wich shows after some days the effect of its variation due the variation of the ambiental temperature.

Neste trabalho obtivemos curvas de corrente induzida por raios-x no teflon FEP que apresentou as seguintes características: a) Inicialmente a corrente subiu, atingindo um máximo em torno dos 10s; b) Decaiu lentamente durante aproximadamente meia-hora, e; c) Atingiu um estado estacionário daí por diante. Ao se desligar a radiação, registrou-se a componente atrasada desta corrente. Usamos amostras de 25&#956m de espessura e área irradiada foi de 12,5cm2 ; o campo aplicado da ordem de 104V/cm e taxa de exposição da ordem de 102 R/S. Verificamos que depois de completada de uma medida da corrente induzida num amostra, esta não voltava a se repetir se realizada depois algumas horas; a corrente então não apresentava um máximo, indo diretamente ao valor estacionário; porém se recuperava com o tempo, repetindo a primeira medida depois de algumas semanas. Para mostrar que esta subida e descida da corrente induzida, não era devido a um efeito de campo, realizamos uma medida onde aplicamos o campo intermitente por curtos períodos de tempo, enquanto a amostra era irradiada. O resultado se mostrou igual aos realizados com tensão aplicada permanentemente. Estudamos ainda a dependência da condutividade induzida com a taxa de exposição e com o campo. Finalmente construímos um modelo teórico para o material que permitiu a obtenção de parâmetros do mesmo concordantes com o esperado. Acrescentamos a este trabalho uma curva que mostra o efeito da variação da temperatura sobre uma medida longa da absorção dielétrica. / In this work we measured X-ray indeuced currents in teflon FEP wich show the following features: a) At the beginning the current increases and reaches a maximum at about 10s; b) It decays slowly during 30 minutes, when a steady state is reached slowly during 30 minutes, when a steady state is reached the delayed conductvity was also measured. The sample were 25&#956m thick and the irradiated área was 12,5cm2; the applied field was of the order of 104 V/cm and the dose rate of the order of 102 R/S. It was observed that a new measurement of the induced conductivity does not duplicate the first one, but after a few hours it come backs to the original one. In order to show that the increase and the deacrease of the current is not caused by na electric field effect we realized a measurement where we polled the sample intermitently while it was irradiated. The current thus obtained had about the same values of the first measuments, when the voltage was applied all the time during the measurement. We also measured the absorption current f a teflon sample wich shows after some days the effect of its variation due the variation of the ambiental temperature.

Neste trabalho reportamos numerosas medidas de correntes devido á condutividade induzida por raios-x, durante e após a irradiação em amostras de filme de PVF2. Uma série de paramêtros de medidas foram variados, tais como: o campo elétrico, a taxa de radiação, o tipo de eletrodo, as condições atmosféricas das medidas e a espessura das atmosferas. Foram também feitas medidas de correntes de cargas e descarga de Absorção Dielétrica em ar úmido, em ar seco, em argônio e no vácuo. Curvas de correntes termo-estimuladas em amostras irradiadas e não-irradiadas permitiram verificar a presença de armadilhas no material, e também obter parâmetros dessas armadilhas. Finalmente desenvolveu-se modelo teórico e calculou-se curvas características para as correntes induzidas que concordaram com as curvas experimentais. O ajuste das curvas permitiu a determinação de valores numéricos para parâmetros de material. / We measured the radiation induced conductivity (RIC), prompt and delayed, in PVDF films under varied conditions, such as: electric fields, dose rate, electrode material, atmospheric environment and sample thickness. Polarization and depolarization absorption currents were also measured in dry and wet air, in argon and vacuum. Thermostimulated current measurements were carried out in irradiate samples showing that excited charges maybe captured by traps. Analysis of these currents led to the evaluation of the trap parameters. A model was developed in order interpret the transient RIC, assuming trapping, detrapping, recombination centers and also taking into account the extraction time.

Afin de permettre de développer un modèle de mémoire non-volatile basée sur le transistor à nanotube de carbone à commande optique qui est utilisée dans des circuits électroniques neuromorphiques, il est nécessaire de comprendre les physiques électroniques et optoélectroniques des nanotubes de carbone, en particulier l’origine de l'effet mémoire que présente ces transistors. C’est dans ce contexte général que cette thèse s'intègre. Le travail est mené sur trois plans :• Caractériser électriquement et optoélectroniquement des structures de test des CNTFETs et des OG-CNTFETs.• Développer un modèle compact pour les contacts Schottky dans les transistors à nanotube de carbone de la façon auto-cohérente basé sur le diamètre et la nature du métal d’électrode en utilisant la méthode de la barrière effective avec les paramètres nécessaires calibrés.• Modéliser l'OG-CNTFET selon les régimes de fonctionnement, lecture, écriture, effacement ou programmation pour application à une mémoire non-volatile en intégrant le mécanisme de piégeage et dépiégeage à l’interface polymère/oxyde. / This PhD thesis presents a computationally efficient physics-based compact model for optically-gated carbon nanotube field effect transistors (OG-CNTFETs), especially in the non-volatile memory application. This model includes memory operations such as “read”, “write”, “erase” or “program”, and “reset” which are modeled using trapping and detrapping mechanisms at the polymer/oxide interface. The relaxation of the memory state is taken into account. Furthermore, the self-consistent modeling of Schottky barriers at contacts between the carbon nanotube channel and metal electrodes is integrated in this model applying the effective Schottky barrier method. The Schottky contact model can be included in CNTFET based devices for a typical biasing range of carbon nanotube transistors. This compact model is validated by the good agreement between simulation results and experimental data (I-V characteristics). In the non-volatile memory application, this model can fully reproduce device behaviors in transient simulations. A prediction study of the key technological parameter, the CNT diameter variety is established to expect its impact on the transistor performance, and more importantly, on the memory operation. In the other hand, this thesis presents a preliminary electric characterization (I-V) of CNTFETs and OG-CNTFETs for the device modeling database. A preliminary optoelectronic characterization method is proposed.

L'objectif de cette thèse est d'étudier la fiabilité et la cyclabilité des jonctions Tunnel magnétique pour mieux comprendre les mécanismes de dégradation et de claquage de la barrière. Une étude de l'endurance de la barrière MgO jusqu'au claquage électrique est présentée. Les échantillons ont été testés sous un mode impulsionnel. Par l'étude de l'effet de retard entre des impulsions successives, une durée de vie optimale des JTM est observée pour une valeur intermédiaire de retard entre les impulsions correspondant à un compromis optimal entre la densité moyenne de charge piégée dans la barrière et la modulation temporelle de charge. En outre, un modèle de piégeage / dépiégeage de charge a été développé qui appuie cette interprétation. L'étude souligne le rôle des pièges de charges dans le mécanisme de claquage de la barrière tunnel. Elle montre aussi que l'endurance extrêmement longue pourrait être obtenue en réduisant la densité des sites de piégeage d'électrons dans la barrière tunnel. Puis, une étude de l'endurance et le bruit basse fréquence a été dans les jonctionS CoFeB/MgO/CoFeB pour STT-MRAM ou TA-MRAM. Une corrélation a été observée et expliquée par la présence de sites de piégeage d'électrons dans la barrière de MgO et le rôle des phénomènes de charge/ décharge à la fois dans la fiabilité et la puissance du bruit en 1 / f électrique. Ces résultats prouvent que le test du bruit basse fréquence peut être utilisé comme une caractérisation prédictive de l'endurance. Enfin, en perspectives, des mesures complémentaires en été proposées pour développer plus le modèle de charge/décharge, une optimisation de la barrière pourrait ainsi être réaliser pour réduire le nombre des pièges de charge au sein de la barrière et par conséquent améliorer la fiabilité des jonctions Tunnel. / The thesis objective is to study the Magnetic Tunnel Junction reliability and cyclability to more understand the barrier breakdown mechanisms. An investigation of barrier endurance till electrical breakdown in MgO-based magnetic tunnel junctions (MTJs) is presented. Samples were tested under pulsed electrical stress. By studying the effect of delay between successive pulses, an optimum endurance of MTJs is observed for an intermediate value of delay between pulses corresponding to an optimum trade-off between the average density of charge trapped in the barrier and the amplitude of its time-modulation at each voltage pulse. Furthermore, a charge trapping/detrapping model was developed which support this interpretation. The study emphasizes the role of electron trapping/detrapping mechanisms on the tunnel barrier reliability. It also shows that extremely long endurance could be obtained in MTJs by reducing the density of electron trapping sites in the tunnel barrier. Then the write endurance and the 1/f noise of electrical origin were characterized in CoFeB/MgO/CoFeB MTJ for STT-MRAM or TA-MRAM. A correlation was observed and explained by the presence of electron trapping sites in the MgO barrier and the role of electron trapping/detrapping phenomena in both the MTJ reliability and its 1/f electrical noise power. These results suggest that 1/f noise could be used as a predictive characterization of the MTJ endurance. Finally, as thesis perspectives, some complement measurements were proposed to further investigate this model and an optimization of MgO barrier which could be carried out to reduce the density of these trapping sites was presented to ameliorate the MTJs reliability.