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The unique features of flexoelectric and dielectric effects are investigated, and exploited for a variety of functions, in a wide range of helicoidal liquid crystal systems, including non-chiral, cholesteric and blue phases. Electrooptic techniques are developed to measure flexoelectric parameters in non-chiral and cholesteric liquid crystals using twisted nematic and Grandjean geometries respectively. A crystal rotation method, and using a lock-in amplifier, is used to enable the measurement of a very small e/K of 0.011 C/N^-1m^-1. Enhancement in chiral-flexoelectric switching is demonstrated theoretically in liquid crystals with negative dielectric anisotropy and in systems in which the pitch is constrained to be other than the natural pitch. A methodological framework for inducing stable Uniform Lying Helix alignment is developed based on weak homeotropic alignment conditions and a method to bias the helicoidal axis orientation; a series of approaches within this framework are demonstrated, including nano-grooved interfaces, periodic boundaries conditions, in-plane fields, and mould-templated micro-channels. The latter approach is potentially commercially viable for sub-millisecond electrooptic technology. The contribution to a cholesteric material's effective dielectric permittivity of flexoelectric polarization is formulated, and an ability to switch a cholesteric between Grandjean and lying-helix configurations based on the dispersion in the flexoelectric polarization and resultant relaxation in dielectric properties is demonstrated. The flexoelectric contribution to dielectric permittivity is exploited to enable switching in bistable reflective displays and alignment of the Uniform Lying Helix. The existence of a flexoelectric contribution to Kerr switching in blue phases is demonstrated, and a semi-empirical model for the effect is developed. The effect is the first known example of a non-polar flexoelectrooptic effect. Independent flexoelectric and dielectric contributions to Kerr switching in blue phases are measured experimentally by measuring the induced birefringence as a function of driving frequency in flexoelectric- and dielectric-dominated wide-temperature-range blue phase materials.

Geschichtete bzw. 2D Materialien bieten interessante Eigenschaften für Halbleiteranwendungen, wie Photonik durch direkte Bandlücken und Miniaturisierung durch atomar dünne Schichten. Diese Arbeit behandelt die Isolierung von 2D-Materialien und die Kontrolle über ionische Modulation in den resultierenden Bauteilen. Im ersten Kapitel wird eine silbervermittelte Exfoliation für MoS₂ eingeführt, die Monolagen mit großer Fläche liefert. Diese Technik ist ebenso leistungsfähig wie goldvermittelte Prozesse und erfordert nur einen einfachen Heizschritt, was zukünftige Exfoliationen erleichtern könnte. Die folgenden Kapitel befassen sich mit Funktionen, die durch kontrolliertes ionisches Gating ermöglicht werden. Im zweiten Kapitel wird die kontrollierte Li-Interkalation in LixZrNCl genutzt, um Supraleitung bei niedriger Ladungsträgerdichte zu untersuchen (BCS-BEC-Übergang). Durch Steuerung der Li-Menge wurden Veränderungen in der Vortex-Dynamik aufgedeckt, z.B. ein Vorzeichenwechsel im Vortex-Hall-Effekt, was auf eine Veränderung der Vortex-Flussdynamik in BEC-ähnlicher Supraleitung zurückgeführt wurde. Diese Erkenntnisse sind relevant für die Entwicklung von Supraleitern. Das dritte Kapitel wechselt zu Bauteilen auf Basis der elektrochemischen Doppelschicht (EDL). Ein 2D MoS₂-synaptischer Transistor wurde demonstriert, wobei gezeigt wurde, dass die Hysterese auf Ionenretention an der EDL zurückzuführen ist. Diese Kombination eines 2D-Materials mit einem Polymerelektrolyten emuliert synaptische Lernprozesse wie gepaarte Puls-Fazilitation und arbeitet energieeffizient. Das letzte Kapitel verlagert das ionische Gating auf das Substrat mittels Li-Ionen-leitender Keramiken für operando-Messungen an 2D-Materialien. Zusammenfassend demonstriert diese Arbeit neben der Exfoliation die vielfältigen Funktionen, die durch kontrolliertes ionisches Gating verfügbar sind, einschließlich Supraleitung bei niedriger Ladungsträgerdichte, neuromorphe Bauteile und operando-Plattformen. / Layered materials and their 2D single-layer forms offer interesting properties for semiconductor applications, such as photonics due to direct band gaps and miniaturization through atomically thin layers. This work addresses the isolation of 2D materials and the control via ionic modulation in the resulting devices. In the first chapter, a silver-mediated exfoliation for MoS₂ is introduced, yielding large-area monolayers. This technique is as effective as gold-mediated processes and requires only a simple heating step, potentially simplifying future exfoliations. The following chapters explore functions enabled by controlled ionic gating. The second chapter utilizes controlled Li intercalation in LixZrNCl to investigate superconductivity at low charge carrier densities to investigate superconductivity within the BCS-BEC crossover. By adjusting the Li content, changes in vortex dynamics were revealed, such as a sign reversal in the vortex Hall effect, attributed to altered vortex flow in increasingly BEC-like superconductivity. These findings are relevant for the development of future superconductors. The third chapter shifts to devices based on the electric double layer (EDL). A 2D MoS₂ synaptic transistor was demonstrated, showing that hysteresis and hence the short-term memory effect stems from ion retention in the EDL formed at the 2D material electrolyte interface. This combination of a 2D material with a polymer electrolyte emulates synaptic learning processes like paired-pulse facilitation and operates in an energy-efficient manner. The final chapter translates the ionic gating to the substrate using Li-ion-conducting ceramics for operando measurements on 2D materials in “open-hood” devices. In summary, besides exfoliation, this work demonstrates the diverse functions achievable through controlled ionic gating applied to 2D and layered materials, including superconductivity at low charge carrier densities, neuromorphic devices, and operando platforms.