Orientador: Vitor Baranauskas / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-05T18:10:58Z (GMT). No. of bitstreams: 1 Correa_WashingtonLuizAlves_D.pdf: 3351242 bytes, checksum: 8f30a26c68d4c1e73a72d065eaedb4f9 (MD5) Previous issue date: 2004 / Resumo: Estudamos processos de dopagem do diamante crescido por deposição química a partir da fase vapor (diamante CVD) com a introdução de impurezas dopantes durante o crescimento do diamante em reatores do tipo filamento-quente. Focalizamos nossa pesquisa na dopagem do diamante com boro, ou nitrogênio, ou enxofre, visando obter diamantes com propriedades semicondutoras com condutividade eletrônica (tipo n) ou condutividade por lacunas (tipo p). Foram utilizadas contaminações intencionais utilizando: trimetil borano (B(CH3)3), ou amônia (NH3), ou dissulfeto de carbono (CS2), misturados com metano e diluídos em hidrogênio. As amostras foram caracterizadas por microscopia eletrônica de varredura (SEM), espectroscopia Raman, espectroscopia de foto-elétrons excitados por raios X (XPS), espectroscopia de emissão de raios X excitado por feixe de prótons (PIXE) e efeito Hall. As dopagens do diamante do tipo p e do tipo n foram obtidas com contaminações de boro e enxofre, respectivamente. O diamante dopado com nitrogênio não apresentou propriedades semicondutoras / Abstract: We studied the diamond doping processes with introduction of doping impurities during the diamond growth in the chemical vapor deposition (CVD) technique, using a hot-filament reactor. Our research focused the use of boron, nitrogen or sulphur atoms in order to obtain diamond films with semiconductor properties of electronic (n-type) or hole (p-type) current transport mechanisms. Trimethyl-borane (B(CH3)3), or ammonia, or carbon disulphide (CS2), mixed with methane and hydrogen were used in the feed gas mixture. The diamond samples were characterized by scanning electron microscopy (SEM), Raman spectroscopy, X-ray photoelectron spectroscopy (XPS), Proton-induced X-ray emission (PIXE) and Hall effect. p-type and n-type diamonds have been obtained with boron and sulphur doping, respectively. However, the nitrogen doped samples do not presented semiconductor properties / Doutorado / Engenharia de Eletronica e Comunicações / Doutor em Engenharia Elétrica

The goal for this research was to reduce the current manufacturing cost of the polycrystalline diamond compact (PDC) inserts utilized in the natural gas and oil drilling industry while not reducing their current performance. Polycrystalline Diamond is added to the tungsten-carbide (WC) substrates commonly utilized in these applications because of its greater wear and thermal resistance. With the current cube cell design for the high-pressure/high-temperature apparatus, it is necessary to bond an extra WC substrate to the polycrystalline diamond insert to achieve the sizes generally ordered by the customers. The problem of bonding the extra WC substrate was solved by increasing the operating volume of the cube cell assembly and changing the heating pattern within the cell while maintaining the temperature and the pressure required for the successful diamond sintering.The new cell design was proposed and tested. The test data were captured and analyzed to prove the hypotheses. The proposed manufacturing methods resulted in reduced cost, processing time, and reduced the need for equipment and operators without diminishing the performance of the PDC insert.

Call number: LD2668 .T4 1978 R37 / Master of Science

Today, it is possible to restore hearing in congenitally deaf children and severely hearing-impaired adults through cochlear implants (CIs). A CI consists of an external sound processor that provides acoustically induced signals to an internal receiver. The receiver feeds information to an electrode array inserted into the fluid-filled cochlea, where it provides direct electrical stimulation to the auditory nerve. Despite its great success, there is still room for improvement, so as to provide the patient with better frequency resolution, pitch information for music and speech perception and overall improved quality of sound.  A better stimulation mode for the auditory nerves by increasing the number of stimulation points is believed to be a part of the solution. Current technology depends on strong electrical pulses to overcome the anatomical gap between neurons and the CI. The spreading of currents limits the number of stimulation points due to signal overlap and crosstalk. Closing the anatomical gap between spiral ganglion neurons and the CI could lower the stimulation thresholds, reduce current spread, and generate a more discrete stimulation of individual neurons. This strategy may depend on the regenerative capacity of auditory neurons, and the ability to attract and guide them to the electrode and bridge the gap. Here, we investigated the potential of cultured human and murine neurons from primary inner ear tissue and human neural progenitor cells to traverse this gap through an extracellular matrix gel. Furthermore, nanoparticles were used as reservoirs for neural attractants and applied to CI electrode surfaces. The nanoparticles retained growth factors, and inner ear neurons showed affinity for the reservoirs in vitro. The potential to obtain a more ordered neural growth on a patterned, electrically conducting nanocrystalline diamond surface was also examined. Successful growth of auditory neurons that attached and grew on the patterned substrate was observed. By combining the patterned diamond surfaces with nanoparticle-based reservoirs and nerve-stimulating gels, a novel, high resolution CI may be created. This strategy could potentially enable the use of hundreds of stimulation points compared to the 12 – 22 used today. This could greatly improve the hearing sensation for many CI recipients.

Carbon Nanotubes (CNTs) have great potentials for Field Electron Emission (FEE) and Flow Boiling Heat Transfer (FBHT) applications. However, their weak adhesion on metallic substrates limits the development of CNTs in both applications. Diamond has high thermal conductivity and develops strong bonding with CNTs. The development of a diamond interlayer between CNTs and substrates is a feasible approach to address the adhesion problems. The purpose of this research was to develop a new CNT-based materials with a diamond interlayer for FEE and FBHT applications by focusing on four objectives: (1) enhancement of diamond thin film adhesion on a Cu substrate, (2) improvement of the CNT FEE stability, (3) reduction of the CNT FEE turn-on field, and (4) investigation of the FBHT performance of CNT based structures. The CNTs and diamond thin films in this thesis were prepared by Microwave Plasma enhanced Chemical Vapor Deposition (MPCVD) and Hot Filament enhanced Chemical Vapor Deposition (HFCVD). The structure and chemical states of the diamond films and CNTs were characterized by Scanning Electron Microscopy (SEM), cross-sectional Transmission Electron Microscopy (TEM), X-Ray Diffraction (XRD), Raman spectroscopy, synchrotron based X-ray Absorption Spectroscopy (XAS). To deposit diamond thin films on a Cu substrate with sufficient adhesion strength, a sandblasting pretreatment and alloying with a tiny amount of Al were investigated. The adhesion of diamond thin films to substrates was evaluated by Vickers micro-hardness indentation. The FEE stability and turn-on field were measured by a Keithley 237 high voltage measuring unit. The FBHT property of the structures was tested repeatedly at different flow velocities to explore the dependence of heat transfer performance on certain parameters, including the flow patterns, Critical Heat Flux (CHF), and stability. The results show that sandblasting pretreatment increases the surface roughness and surface defect density, thereby increasing diamond nucleation density and adhesion to the Cu substrate. Al alloying appears to inhibit the formation of graphite at the interface between diamond and the Cu substrate, which improves the chemical bonding between diamond and the Cu substrate and increases the adhesion strength between them. The FEE testing results show that ultra-high FEE stability (more than 5000 minutes) was achieved for the CNTs with a diamond interlayer. This is attributed to the good contact at the diamond-CNT and diamond-substrate interfaces. The main factors that affect the CNT FEE turn-on field were also studied. By optimizing the structure, an FEE turn-on field of 5.1 V/μm was achieved and an emission barrier model for CNTs with a diamond interlayer on Cu substrate was used to explain the results. FBHT testing was done on CNTs with different structures and the results show that high heat transfer efficiency can be achieved on CNTs with a diamond interlayer at low mass fluxes.

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Diamond is a unique material with many exceptional properties. It has therefore been proven to be an important material for many applications. Moreover, the introduction of dopant species into the gas phase during the CVD growth process has been shown to strongly influence not only the properties and morphology of diamond, but also the growth rate. The purpose with the theoretical part of the present study has been to support and explain the experimental observations regarding the effect of various dopants (nitrogen, phosphorous, sulphur, and boron) on the diamond growth rate. Commonly observed H-terminated diamond surfaces [(111), (110) and (100)-2×1], were thereby carefully investigated using density functional theory under periodic boundary conditions. Based on the assumption that the hydrogen abstraction reaction is the growth rate-limiting step, both the thermodynamic and kinetic aspects of the diamond growth process were found to be severely affected by various dopants. More specifically, the results showed that nitrogen and phosphorous dopants (positioned within the 2nd, 3rd or 4th carbon layer) will cause an enhancement in the growth rate (as compared with non-doped situations). On the other hand, any growth rate improvement does only occur when positioning boron in the 2nd, and sulphur in the 4th, atomic carbon layer. With boron, and sulphur, positioned within the other atomic carbon layers, the growth rates were observed to decrease. In addition, the main purpose with the experimental part of the present study has been to investigate the effect of one specific dopant precursor (TMB) on the boron-doped diamond growth process. The result has shown that the increasing mass flow of TMB will not affect the mechanism of the HFCVD growth process of boron doped diamond. However, a linear boron carrier concentration in the diamond film vs. mass flow rate of TMB was observed.

We have designed and constructed a novel Raman near-field scanning optical microscope (NSOM) and evaluated its performance characteristics with the goal of characterizing the strain in nanoscopic silicon structures. The Raman NSOM was built around a commercial Raman microscope to which a custom built stage was added to provide precise control over the tip position above the sample (z) using shear-force microscopy feedback as well as sample scanning in the x-y plane. The motion control axes were calibrated to better than 1 nm in z and approximately 20 nm in x and y. The NSOM provides both topographical images and Raman mapping with a lateral spectral resolution of 150-300 nm. The experiments described herein were enabled by gold-coated chemically etched NSOM tips with aperture diameters ranging between 60 and 150 nm. The sensitivity of the instrument was demonstrated by the high signal-to-noise ratios observed for Raman scattering by diamond and silicon in reflection mode. Spatial resolution and spectral sensitivity were demonstrated by obtaining well-resolved tip-sample separation curves that provide an accurate estimate of tip aperture size during an experiment. / text

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