Zugl.: Karlsruhe, Univ., Diss., 2005

Universiẗat, Diss., 1999--Kaiserslautern.

Universiẗat, Diss., 2005--Karlsruhe.

Zugl.: Köln, Univ., Diss., 2009

University, Diss., 2004--Kiel.

Stuttgart, Univ., Diss., 2003.

Chemnitz, Techn. Univ., Diplomarb., 1999.

Eine der Faustregeln der Kolloid- und Oberflächenphysik ist, dass die meisten Oberflächen geladen sind, wenn sie mit einem Lösungsmittel, normalerweise Wasser, in Kontakt treten. Dies ist zum Beispiel bei ladungsstabilisierten Kolloidalen Suspensionen der Fall, bei denen die Oberfläche der Kolloidteilchen geladen ist (gewöhnlich mit einer Ladung von mehreren Hunderttausend Elementarladungen), oder bei Monoschichten ionischer Tenside, die auf einer Luft-Wasser Grenzfläche sitzen (wobei die wasserliebenden Kopfgruppen durch die Freisetzung von Gegenionen geladen werden), sowie bei Doppelschichten, die geladene phospholipide enthalten (wie Zellmembranen). In dieser Arbeit betrachten wir einige Modellsysteme, die zwar eine vereinfachte Fassung der Realität darstellen, von denen wir aber dennoch erwarten koennen, dass wir mit ihrer Hilfe einige physikalische Eigenschaften realer geladener Systeme (Kolloide und Elektrolyte) einfangen können. / One of the rules-of-thumb of colloid and surface physics is that most surfaces are charged when in contact with a solvent, usually water. This is the case, for instance, in charge-stabilized colloidal suspensions, where the surface of the colloidal particles are charged (usually with a charge of hundreds to thousands of e, the elementary charge), monolayers of ionic surfactants sitting at an air-water interface (where the water-loving head groups become charged by releasing counterions), or bilayers containing charged phospholipids (as cell membranes). In this work, we look at some model-systems that, although being a simplified version of reality, are expected to capture some of the physical properties of real charged systems (colloids and electrolytes).<br /> <br /> We initially study the simple double layer, composed by a charged wall in the presence of its counterions. The charges at the wall are smeared out and the dielectric constant is the same everywhere. The Poisson-Boltzmann (PB) approach gives asymptotically exact counterion density profiles around charged objects in the weak-coupling limit of systems with low-valent counterions, surfaces with low charge density and high temperature (or small Bjerrum length). Using Monte Carlo simulations, we obtain the profiles around the charged wall and compare it with both Poisson-Boltzmann (in the low coupling limit) and the novel strong coupling (SC) theory in the opposite limit of high couplings. In the latter limit, the simulations show that the SC leads in fact to asymptotically correct density profiles. We also compare the Monte Carlo data with previously calculated corrections to the Poisson-Boltzmann theory. We also discuss in detail the methods used to perform the computer simulations.<br /> <br /> After studying the simple double layer in detail, we introduce a dielectric jump at the charged wall and investigate its effect on the counterion density distribution. As we will show, the Poisson-Boltzmann description of the double layer remains a good approximation at low coupling values, while the strong coupling theory is shown to lead to the correct density profiles close to the wall (and at all couplings). For very large couplings, only systems where the difference between the dielectric constants of the wall and of the solvent is small are shown to be well described by SC.<br /> <br /> Another experimentally relevant modification to the simple double layer is to make the charges at the plane discrete.<br /> The counterions are still assumed to be point-like, but we constraint the distance of approach between ions in the plane and counterions to a minimum distance D. The ratio between D and the distance between neighboring ions in the plane is, as we will see, one of the important quantities in determining the influence of the discrete nature of the charges at the wall over the density profiles. Another parameter that plays an important role, as in the previous case, is the coupling as we will demonstrate, systems with higher coupling are more subject to discretization effects than systems with low coupling parameter.<br /> <br /> After studying the isolated double layer, we look at the interaction between two double layers. The system is composed by two equally charged walls at distance d, with the counterions confined between them. The charge at the walls is smeared out and the dielectric constant is the same everywhere. Using Monte-Carlo simulations we obtain the inter-plate pressure in the global parameter space, and the pressure is shown to be negative (attraction) at certain conditions. The simulations also show that the equilibrium plate separation (where the pressure changes from attractive to repulsive) exhibits a novel unbinding transition. We compare the Monte Carlo results with the strong-coupling theory, which is shown to describe well the bound states of systems with moderate and high couplings. The regime where the two walls are very close to each other is also shown to be well described by the SC theory.<br /> <br /> Finally, Using a field-theoretic approach, we derive the exact low-density ("virial") expansion of a binary mixture of positively and negatively charged hard spheres (two-component hard-core plasma, TCPHC). The free energy obtained is valid for systems where the diameters d_+ and d_- and the charge valences q_+ and q_- of positive and negative ions are unconstrained, i.e., the same expression can be used to treat dilute salt solutions (where typically d_+ ~ d_- and q_+ ~ q_-) as well as colloidal suspensions (where the difference in size and valence between macroions and counterions can be very large). We also discuss some applications of our results.

In dieser Arbeit wurde der Einfluss dünner Siliciumdioxidschichten auf die im Co(20 nm)/Ti(5 nm)/SiO$_{2}$(0...3 nm)/Si(100) System, bei einer Kurzzeittemperung, ablaufenden Festphasenreaktionen untersucht. Weiterhin wurden Festphasenreaktionen an Co/C/Si(100) und Ti/Co/C/Si(100) Schichtsystemen untersucht. Plasmaätzprozesse wurden zur Entfernung der, im Co/Ti/Si-System nach Temperung entstehenden, reaktionsbedingten Deckschicht verwendet. Die Charakterisierung der Proben erfolgte mittels elektrischer Messungen, TEM, STM, XRD, RBS und AES.

In dieser Arbeit wurde der Einfluss dünner Siliciumdioxidschichten auf die im Co(20 nm)/Ti(5 nm)/SiO$_{2}$(0...3 nm)/Si(100) System, bei einer Kurzzeittemperung, ablaufenden Festphasenreaktionen untersucht. Weiterhin wurden Festphasenreaktionen an Co/C/Si(100) und Ti/Co/C/Si(100) Schichtsystemen untersucht. Plasmaätzprozesse wurden zur Entfernung der, im Co/Ti/Si-System nach Temperung entstehenden, reaktionsbedingten Deckschicht verwendet. Die Charakterisierung der Proben erfolgte mittels elektrischer Messungen, TEM, STM, XRD, RBS und AES.