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Experimental study of double-pulse laser micro sintering, ultrasound-assisted water-confined laser micromachining and laser-induced plasmaWeidong Liu (15360391) 29 April 2023 (has links)
<p>This dissertation presents research work related to laser micro sintering, laser micro machining and laser-induced plasma. Firstly, we present extensive experimental studies of double-pulse laser micro sintering (DP-LMS), which typically utilizes the high pressure generated by laser-induced plasma over the powder bed surface to promote molten flow and enhance densification. Chapter 2 shows a single-track experimental study of the DP-LMS process using cobalt powder. The related fundamental mechanisms and effects of different laser parameters on the sintering results are analyzed with the help of <em>in-situ</em> time-resolved temperature measurements. Chapter 3 shows a multi-track experimental study of the DP-LMS process using iron powder. The sintered materials are characterized via the top surface porosity, elemental composition, grain microstructure, nanohardness and metal phase. Three strategic guidelines for laser parameter selection are summarized in the end. Chapter 4 shows time-resolved imaging and OES measurements for plasma induced during DP-LMS. The plasma temperature and free electron number density are deduced by its optical emission spectra (OES). These three chapters have clearly demonstrated DP-LMS can produce much more continuous and densified materials than LMS only using the sintering or pressing laser pulses.</p>
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<p>Then, we present laser micro grooving of silicon carbide (SiC) in Chapter 5 by ultrasound-assisted water-confined laser micromachining (UWLM), in comparison with laser machining in water without ultrasound and laser machining in air. UWLM applies <em>in-situ</em> ultrasound to the water-immersed workpiece surface to improve the machining quality and/or productivity. Time-resolved water pressure measurements are carried out to help analyze relevant mechanisms. It has been demonstrated UWLM can be a competitive approach to produce high-quality micro grooves on SiC. The crack problem appears to be effectively solved using a high pulse repetition rate.</p>
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<p>Finally, we report a double-front phenomenon for plasma induced by high-intensity nanosecond laser ablation of aluminum in Chapter 6. An additional plasma front is observed via an intensified CCD (ICCD) camera, which propagates very fast at the beginning but stops propagating soon after the laser pulse mostly ends. Its formation could be caused by the inverse bremsstrahlung absorption of laser energy by the ionized ambient gas. Three possible mechanisms on how the ambient gas breakdown is initiated are proposed. </p>
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Gate Drive Design for SiC MOSFET Device Characterization : Investigation into the impact of the gate inductance and resistance on the switching behaviour of SiC Power MOSFETsMbah, Elochukwu January 2023 (has links)
Silicon Carbide as a wide-bandgap semiconductor has several physical and electrical advantages over Silicon for high voltage and high frequency applications. SiC as a MOSFET device has a lot of great characteristics like lower on-resistance and low input capacitances. However, due to its high switching capabilities, SiC MOSFET-based converter circuits experience higher dv/dt and di/dt transients and are therefore more susceptible to parasitic elements. This thesis investigates the interaction of the parasitic gate inductance and resistance on the switching behaviour of SiC DMOSFET (planar) and UMOSFET (trench). To examine this, a double pulse test (DPT) setup was utilised both in simulation and experimentally. The influence of the gate inductance and resistance on the oscillation behaviour in the VGS during the miller period was found to be dependent on the condition of the upper device. Furthermore, the upper device was discovered to have a high impact on the oscillations in the VGS via its source inductance. The gate inductance showed a mixed impact on IDS and VDS overshoot, with IDS overshoot reducing with increasing gate inductance and the reverse case for VDS. The gate resistance, however, showed a consistent impact on both IDS and VDS overshoot, with both reducing with increasing gate resistance. These results ultimately point to the impact of di/dt and dv/dt transients. An interesting result observed on these root causes showed that in the DPT arrangement used, lower test current levels may have a more significant impact on the oscillations in the VGS than higher test current when varying the test currents, with 20 A having the highest impact on the oscillations in simulations and 15 A having the highest impact in experimental verification. On the switching energy, the gate inductance was not shown to have a significant impact on switching losses while the gate resistance had a much more significant impact on the switching losses. / Kiselkarbid som halvledare med brett bandgap har flera fysiska och elektriska fördelar jämfört med kisel för högspännings- och högfrekvensapplikationer. SiC som en MOSFET-enhet har många fantastiska egenskaper som lägre resistans och låga ingångskapacitanser. Men på grund av dess höga omkopplingsförmåga upplever SiC MOSFET-baserade omvandlarkretsar högre dv/dt och di/dt transienter och är därför mer mottagliga för parasitiska element. Denna avhandling undersöker interaktionen mellan gate-drivkretsens parasitära induktans och resistans på kopplingsbeteendet på SiC DMOSFET (plan) och UMOSFET (trench). För att undersöka detta användes en dubbelpulstest (DPT) mätuppställning både i simulering och experimentellt. Inverkan av grindinduktansen och motståndet på svängningsbeteendet i VGS under Millerperioden visade sig vara beroende av den övre anordningens tillstånd. Vidare upptäcktes att den övre anordningen hade en hög inverkan på svängningarna i VGS via dess parasitiska induktans. Gate-induktansen visade en blandad inverkan på IDS- och VDS-översvängning, med IDS-översvängning som minskade med ökande gateinduktans och det omvända fallet för VDS. Gatemotståndet visade dock en konsekvent inverkan på både IDS- och VDS-överskridningar, med båda minskande med ökande gatemotstånd. Dessa resultat pekar slutligen på inverkan av di/dt- och dv/dt-transienter. Ett intressant resultat som observerats på dessa grundorsaker visade att i det använda DPT-arrangemanget kan lägre testströmnivåer ha mer signifikant inverkan på svängningarna i VGS än högre testström vid variation av testströmmarna, med 20 A som har den högsta inverkan på svängningarna i simuleringar och 15 A som har störst effekt vid experimentell verifiering. På omkopplingsenergin visades inte grindinduktansen ha någon signifikant inverkan på omkopplingsförlusterna medan grindresistansen hade mycket mer betydande inverkan på omkopplingsförlusterna.
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