A high efficiency driver circuit is proposed for Light Emitting Diode (LED) lamps with dimming feature. The current regulation is accomplished by processing partial power of the power conversion circuit so that a high overall efficiency can be realized. The detailed description and analysis of circuit operation are provided. The dimming feature can be accomplished by means of linear current regulation, pulse-width modulation (PWM) or double pulse-width modulation (DPWM). Based on the circuit analyses and derived equations, a laboratory circuit is designed for an LED lamp which is composed of 40 high-brightness white LEDs in series. The performances with three dimming schemes are compared from the measured results. LEDs dimmed by DPWM have less color shift than those dimmed by linear current regulation and PWM. On the other hand, the dimming scheme with linear current regulation has the highest light efficiency over the entire dimming range. The circuit efficiency can be as high as 95.5% at the rated output and deteriorates slightly to 90.5% as the lamp is dimmed to 10% of the rated power.

This thesis proposes a dimming approach with Double Pulse Width Modulation for equalizing the light output of the back light with light emitted diodes (LEDs) for large scale outdoor liquid crystal displays (LCDs). The approach compensates the difference among the LED light bars by adjusting the power outputs of converters according to the feedback of light strength from light sensors. With the proposed Double Pulse Width Modulation method, local brightness adjustment on the light bars can be made to provide a uniform light output and the dimming function for LCD can be retained. Experiments results made on a 46¡¨ LCD with four LED light bars demonstrate that the double pulse-width- modulation can provide uniformly in the light bar output. The experimental results show the proposed Double Pulse Width Modulation (DPWM) method can alleviate the problem from divergence of the light bars and thus can generate more uniform light output on LCDs.

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コウモリは1送信2受信器のミニマルな超音波センシングデザインからは想像できない，高度な3次元飛行を実現させている．本論文では，①繰り返し同じ障害物環境下を飛行するコウモリの未知と既知の空間に対する音響センシング行動の違いを比較した．さらに，②未知環境飛行時に見られる特徴的な空間スキャニングの行動パターンをモデル化し，自律走行車を用いてコウモリの行動の有用性を実環境センシングのふるまいから定量的に評価した． / Bats possess a highly developed biosonar system that can be regarded as the minimum sensor requirement for three-dimensional spatial sensing. The present study 1) experimentally investigated changes in the pulse direction, pulse emission timing and flight path of CF-FM bats during an obstacle avoidance flight as the bats became familiar with the space around them and 2) expressed behavioral principles observed in the bats during flight, especially in an unfamiliar space, using an algorithm and then embedded the principles into an autonomous vehicle equipped with simple ultrasound sensors. The findings of this world-leading biomimetic research offer new possibilities for artificial-intelligence navigation systems. / 博士(工学) / Doctor of Philosophy in Engineering / 同志社大学 / Doshisha University

La spectroscopie de plasma induit par laser ou LIBS (Laser-Induced Breakdown Spectroscopy)est aujourd’hui utilisée dans de nombreux secteurs d’activités du fait des atouts qu’ellepossède. Cette technologie permet de caractériser la composition élémentaired’échantillons quel que soit leur phase (gaz, solide et liquide), rapidement (10-6s), de façon insitu et sans contact, et à pression et température ambiantes. Ces caractéristiques présententun intérêt pour des applications militaires de détection de traces d’agents chimiquescontaminant une surface. L’objectif de cette étude est d’étudier le potentiel de cettetechnologie afin de détecter les espèces chimiques présentes dans les agents réels, tels quele phosphore, le fluor, le chlore et le soufre sur des surfaces d’échantillons polluésreprésentatifs de milieux opérationnels. Pour améliorer les performances analytiques de latechnique LIBS classique à simple impulsion, la configuration double impulsion estdéveloppée et comparée à la méthode simple impulsion. Son principe repose sur l’envoisuccessif de deux impulsions laser résolues générant au point focal un plasma thermique serelaxant in fine en émettant des raies spécifiques de la composition élémentaire. Les gainsanalytiques, ainsi que les limites de détection sont évalués pour plusieurs typesd’échantillons représentatifs. Une comparaison avec les seuils de détection attendus estétablie. / Laser-Induced Breakdown Spectroscopy (LIBS) is currently used in many fields of activity,thanks to its numerous uses. This technology allows fast measurement (10-6 s), with in situconfiguration, at ambient pressure and temperature, of different samples in gaseous, liquidor solid phase. These performances present a high interest for military applications to detectchemical agent traces on surfaces. The aim of this study is to investigate the potential of thistechnology in the detection of specific chemical atoms of live agents such as phosphorus,fluorine, chlorine, and sulfur on the surface of contaminated samples representing thetheatre. In order to improve the analytical performances of classical technical LIBS of singlepulse, a double pulse method was developed and compared to single pulse method. Itsprinciple is based on the emission of two successive laser impulsions resolved in space andtime, generating in the focal point thermal plasma which relaxes in fine emitting specificradiation of the elementary composition. The analytical gains, as for detection thresholdsare evaluated for each type of samples. A comparison of the detection thresholds isestablished.

An efficient Light Emitting Diode (LED) lamp driver circuit is proposed for retrofitting the conventionally used incandescent lamps with existing TRIAC dimmer. The dimming feature in a wide range of firing angle from 30¢X to 130¢X can be accomplished by means of double pulse-width modulation (DPWM) and analog current regulation. The LED lamp driver adopts a flyback converter with an auxiliary active power MOSFET for synchronous switch and an associated inductor for zero voltage switching (ZVS), leading to lower switching loss and thus achieving a higher circuit efficiency. In the thesis, the mode operation of the driver circuit is analyzed and the design equations are derived accordingly. A laboratory circuit is designed for an 50 W LED lamp which is composed of 45 high-brightness white LEDs in series. Experiments are carried out to test the circuit performances with two dimming schemes. The experimental results indicate that the driver can achieve a circuit efficiency of 95 % at the rated output. When the LED lamp is dimmed, the circuit efficiency with DPWM is higher than that with the analog current regulation. On the other hand, the LED lamp dimmed by analog current regulation has a higher efficiency but a less color shift by DPWM.

The recent application of semiconductor materials, such as GaN, to power electronics has led to the development of a new generation of devices, which promise lower losses, higher operating frequencies and reductions in equipment size. The aim of this research is to study the capabilities of emerging GaN power devices, to understand their advantages, drawbacks, the challenges of their implementation and their potential impact on the performance of power converters. The thesis starts by presenting the development of a simple model for the switching transients of a GaN cascode device under inductive load conditions. The model enables accurate predictions to be made of the switching losses and provides an understanding of the switching process and associated energy flows within the device. The model predictions are validated through experimental measurements. The model reveals the suitability of the cascode device to soft-switching converter topologies. Two GaN cascode transistors are characterised through experimental measurement of their switching parameters (switching speed and switching loss). The study confirms the limited effect of the driver voltage and gate resistance on the turn-off switching process of a cascode device. The performance of the GaN cascode devices is compared against state-of-the-art super junction Si transistors. The results confirm the feasibility of applying the GaN cascode devices in half and full-bridge circuits. Finally, GaN cascode transistors are used to implement a 270V - 28V, 1.5kW, 1 MHz phase-shifted full-bridge isolated converter demonstrating the use of the devices in soft-switching converters. Compared with a 100 kHz silicon counterpart, the magnetic component weight is reduced by 69% whilst achieving a similar efficiency of 91%.

This diploma thesis deals with two spectroscopic methods - laser induced breakdown spectroscopy and Raman spectroscopy. These methods were used for analysis of alga Trachydiscus minutus, which was cultivated in copper sulfate solutions of various concentrations. First part of this thesis is dedicated to physics and measurements of laser induced breakdown spectroscopy, second part deals with Raman spectroscopy.

The diploma thesis deals with the use of laser induced breakdown spectroscopy (LIBS) for detection of heavy metals traces, copper and lead, in aqueous solution of copper(II) sulphate pentahydrate and lead(II) ethanoate trihydrate. Results obtained by using single and double-pulse LIBS are compared. The theoretical section focuses on the issue of heavy metals and detection possibilities, describes the fundamental principle of LIBS technique and its modification for liquid analysis. The experimental section describes analyzed samples, the experimental apparatus, double-pulse technique, and method of spectral analysis. The moving breakdown model, which theoretically predicts optimal values of some experimental parameters, is explained briefly in section Optimalizácia. This model has been tested, however the results of experiments did not prove the theory. Furthermore, the experimental section reports the process and results of the optimization of all key measurement parameters and obtaining limits of detection from calibration curves.

All DC/DC converter products include power electronic circuits for power conversion.It is important to find an efficient way for power conversion to reduce power losses and reduce the need for cooling and achieve environmentally friendly solutions.The use of semiconductor switches of wide band gap type is a solution to the problem.Therefore, the investigation of the SiC MOSFET in DC/DC converters is of crucial importance for the reduction of power losses.The thesis investigates the SiC MOSFET in three different tests.The efficiency test, the temperature test and the double pulse test.In the efficiency, the MOSFET STC3080KR and NTH4L022N120M3S are compared with their respective simulation made on PLECS.While in the temperature test the STC3080KR is investigated at different frequencies.In Double Pulse Test the MOSFET STC3080KR with 4-pin (TO-247 4L) package is compared with the MOSFET SCT3080KLHRC11 with 3-pin package (TO-247 N).The efficiency test shows that the MOSFET SCT3080KR in the practical test gives an efficiency in the range of 96,5-96,1% at 110kHz, 96-95,4% at 150kHz and 95,8-94,2% at 180kHz.While, the NTH4L022N120M3S gives an efficiency in the range of 98,1-97,1% at 110kHz, 96,3-96,2% at 150kHz and 96,1-95,5% at 180kHz.The efficiency given by the simulation is higher than the actual efficiency for both MOSFETs.However, the shape of the curves in the practical part matches the simulated one.The efficiency is not the same since the simulation do not consider all the losses present in the practical part.The temperature test shows that the temperature for the high side and low side increases when the frequency and the load current increases.However, some results show that when the load current increases at some point the low-side MOSFET will reach the temperature of the high-sided MOSFET and at the end it will exceed its value. This is due to the increment of the conduction losses since the low side MOSFET is basically the body diode incorporated in the MOSFET.Finally, the Double Pulse Test shows that the TO-247 N (3-pin) package switches with less source inductance compared to the TO-247 4L (4-pin) package.Therefore, the MOSFET SCT3080KLHRC11 (TO-247 N package) needs more time during the switching and which means that the switching power losses will be higher in comparison to the SCT3080KR as shown in Table 5.2 and Table 5.1. / Alla DC/DC-omvandlarprodukter inkluderar kraftelektroniska kretsar för effektomvandling. Detta gör att det är viktigt att hitta ett effektivt sätt för effektomvandlingen för att minska effektförlusterna och minska behovet av kylning och uppnå miljövänliga lösningar.Användningen av halvledaromkopplare med ett stort bandgap är en lösning på problemet.Därför är undersökningen av SiC MOSFET i DC/DC-omvandlare av avgörande betydelse för att minska effektförlusterna. Detta examensarbete undersöker SiC MOSFET i tre olika tester vilket är; Effektivitetstestet, temperaturen testet och double pulse testet.I effektivitets testet jämförs MOSFET STC3080KR och NTH4L022N120M3S med deras respektive simulering gjorda på PLECS.Medan i temperaturtestet undersöks STC3080KR vid olika frekvenser.I double pulse testet jämförs MOSFET STC3080KR med ett 4-stifts (TO-247 4L)-paket med MOSFET SCT3080KLHRC11 med ett 3-stiftspaket (TO-247 N).Effektivitetstestet visar att MOSFET SCT3080KR i det praktiska testet ger en verkningsgrad i intervallen 96,5-96,1% vid 110kHz, 96-95,4% vid 150kHz och 95,8-94,2% och vid 180kHz.Medan NTH4L022N120M3S visar en effektivitet i intervallet av 98,1-97,1% vid 110kHz, 96,3-96,2% vid 150kHz och 96,1-95,5% vid 180kHz.Verkningsgraden som ges av simuleringen är högre än den praktiska för båda MOSFET:erna.Formen på kurvorna i den praktiska delen matchar den simulerade.Verkningsgraden är inte densamma eftersom simuleringen inte tar hänsyn till alla förluster som finns i den praktiska delen.Temperaturtestet visar att temperaturen för den höga sidan och lågsidan ökar när frekvensen och belastningsströmmen ökar.Vissa resultat visar att när belastningsströmmen ökar lågsidans MOSFET når temperaturen hos den högsidiga MOSFET:en och i slutet kommer den att överstiga dess värde.Detta beror på ökningen av ledningsförlusterna eftersom MOSFET på lågsidan i grunden är kroppsdioden som ingår i MOSFET.Slutligen, visar double pulse testet att TO-247 N (3-stifts)-paketet växlar med mindre källinduktans jämfört med till TO-247 4L (4-stifts)-paketet.Därför behöver MOSFET SCT3080KLHRC11 (TO-247 N-paket) mer tid under växlingen och därför blir växlingseffektförlusterna högre jämfört med SCT3080KR, detta visas i Tabell 5.2 och Tabell 5.1.