An electron cyclotron resonance (ECR) plasma source which couples microwave to the plasma using an internal antenna was developed. The use of internal antenna provides a "windowless" power coupling method that can eliminate the issues of contamination which require frequent source maintenance. Antenna structure, magnetic configuration and plasma parameters were modified for carbon film deposition by chemical sputtering. The ECR source generated low-plasma-potential (10 V), high-plasma-density (10^16 m^-3) discharges at low gas pressures (10^-1 Pa) and low input power (100 W). The antenna realized stable operation for more than 5 h and can be utilized for carbon film deposition. / 博士(工学) / Doctor of Philosophy in Engineering / 同志社大学 / Doshisha University

Niobium thin films are expected to be free of solid inclusions commonly seen in solid niobium. For particle accelerators, niobium thin film has the potential to replace the solid niobium in the making of the accelerating structures. In order to understand and improve the superconducting performance of niobium thin films at cryogenic temperature, an energetic vacuum deposition system has been developed to study deposition energy effects on the properties of niobium thin films on various substrates. The system directly uses microwave power to create a pure niobium plasma, which can be used to extract niobium ion flux with controllable kinetic energy for direct deposition. The ultra high vacuum avoids the gaseous inclusions in thin films. A retarding field energy analyzer is developed and used to measure the kinetic energy of niobium at the substrate location. A systematic process for thin film characterization is developed and used to analyze the niobium thin films made by this energetic condensation. The properties of niobium thin films at several deposition energies are obtained, and the results show that there exists a preferred deposition energy around 115eV. / Ph. D.

Recent developments in the field of nano-structured materials for technological as well as scientific prospective are quite interesting. In this context carbon plays a dominant role. Few examples such as carbon nanotubes (CNTs), fullerene, nanostructured diamond, as well as, amorphous carbon film, particularly, diamond-like carbon (DLC) coating are the areas of today’s research. This thesis deals with ECR plasma deposition of carbon in two different forms, i.e., Diamond-like carbon (DLC) and carbon nanotubes (CNTs) In the case of DLC coatings the chemical vapor deposition (CVD) and sputtering CVD configuration has been used. The carbon nanotubes have been grown using CVD configuration. DLC films were deposited by ECR-rf CVD mode, as well as, ECR sputtering mode. In case of CVD films, about 0 — 100 Watts rf bias was employed in steps of 20 Watts, corresponding to effective negative self bias voltage of 15 — 440 V. CH4 and C2H2 have been used as source gas for CVD films. Microwave power was optimized at 300 Watts. In case of sputtering, a cylindrical graphite target (diameter 9 cm and length 6 cm) kept at the exit of the Ar plasma was biased with -200 V. Films were deposited on floating substrate (temperature ~100 oC). Films were deposited on Si, quartz, and steel substrates and characterized by FT-IR, Raman, UV-Visible, Photoluminescence spectroscopy (PL), spectroscopic ellipsometry. Nanoindentation was used to evaluate the film’s elastic property. Pin-on-disk measurement was used to study the tribological property of the films. Electrical properties of the films deposited on Si [p-(100), 10 Ω cm] were studied using picoammeter / source measuring instrument by two probe method. FT-IR analysis showed sp3C-H absorption peak at 2930 cm-1 for the CVD films, while sputtered films did not show any C-H absorption. Raman spectroscopy was used to evaluate bonding aspects as well as hydrogen content of the films. Comparison of sp3C : sp2C among the films was done based on I(D) / I(G) of the Raman peaks, while hydrogen content was estimated based on background slope of the Raman spectra. It was observed that increase in rf bias induces more sp2C while hydrogen content decreases. An optimum substrate bias of 40 Watts was predicted from the Raman spectra. For sputtered films Raman spectra indicated the formation of nanocrystal diamond in a-C matrix. UV-Visible-NIR optical transmission spectroscopy was used to determine the band gap (Tauc), E0, of the films. It showed that increase in rf bias increases the absorption coefficient α. The films deposited from CH4 with a substrate bias of 0 and 20 Watts (i.e., high hydrogen content in the film) followed (hνα)1/2 = const. (hν –E0), while other films hνα = const. (hν –E0) ( h is Plank constant ν is frequency of light). E0 varied from 1.1 — 2.5 eV. It was assumed that for π--π* transition follows root relation while π--σ * transition follows linear relation. Spectroscopic ellipsometry was used to determine optical constants, film thickness, and interface thickness. Deposition rate found out to be ~100 nm / mints for C2H2, ~10 nm / mints for CH4, and ~2.5 nm /mints for sputtered films. Formation of interface layer of thickness about 5 —30 nm due to high energy ion bombardment takes place for the films deposited at 40 Watts rf bias or higher. Band gap and related phenomena was revisited from the data that was obtained from this instrument which reasonably matches with the earlier results. PL experiments were carried out at room temperature using lamp excitation source as well as laser excitation source (457.9 nm wavelength). In case of lamp excitation source any wavelength from 200 —900 nm region can be selected. PL spectra showed that there are two sources of PL signal, one from nanocrystal diamond and other from sp2C phase. To obtain PL signal from diamond UV excitation wavelength was required. This diamond phase is highly efficient emitter as compared to sp2C phase. Based on the closeness of diamond’s optical centre labeling of the peaks was done. For CVD films N3 ( 457 nm), H4 (495 nm), H3 (520 nm), [N-V]0 (~590 nm) optical centers of diamond was observed. For sputtered films [N-V]0 (2.08 eV), H3 (2.38 eV), H4 (2.50 eV), N3 (2.81eV), N3 (2.96 eV), 3.3 eV ( undocumented peak), 5RL ( 4.14 eV) optical centers of diamond as well as band-edge emission (5.01 eV ) was observed. Nanoindentation technique was used to estimate the elastic property and related phenomena of the films. It shows that the films are having hardness of 5—17 GPa and reduced modulus of 20 —120 GPa depending on the deposition parameters. All the films show highly elastic response at lower load, i.e., at low indentation depth where elastic recovery is 85—95 %. At higher load substrate effect comes into the picture. Further morphology in and around the region was evaluated using scanning probe microscopy (SPM). It was shown that substrate effect comes into picture that is based on film’s thickness as well as its elastic property. Films were further characterized by pin-on-disk experiments. C2H2 based films were used because of high deposition rate. Since 40 Watts, 60 Watts, and 100 Watts films adhere well with steel only on these films tribological test was possible. A hardened bearing-steel was used as substrate and a 2 mm diameter cylindrical pin made of tool steel was use as pin. Studies were carried out with three different loads of 20, 40, and 60 N. Friction coefficient varied from 0.02 — 0.04 and wear rate was found to be 10-6 — 10-9 mm3 / N m. A sputtered film of 0.1 μ m on the top of the CVD film, in many respects, enhances the tribological properties. It was shown that certain amount of wear is required for low friction of DLC. Electrical characterization of the films deposited from CH4 showed that they are highly insulating with resistivity of 1013 —1011 Ω-cm, and current conduction mechanism has been found to be predominantly space charge limited conduction (SCLC). Similar to the observations of Tauc’s relation, the film deposited with 0 and 20 Watts bias behave differently and followed the relation , where as, all other films exhibited the relation ( α, n are constants). It signifies that for 0 and 20 Watts rf biased films traps are uniformly distributed across the band gap while for others it decreases from the conduction band. For 0 and 20 Watts rf biased films no Ohmic current was observed at a detection level of 10-11 A. 40 Watts and higher rf biased films showed that three distinct regions in the I-V curves; initially Ohmic region, next to it SPLC region, and finally breakdown region. Increase in rf bias causes increase in Ohmic current. Film deposited from C2H2 showed diode-like behavior with higher conduction current limited by resistive control, and the resistivity of the films was ~ 109 — 105 Ω-cm. Difference in resistivity between the films deposited from CH4 and C2H2 was explained by considering the impurities in the source gas resulting in nitrogen doping concentration. Increase in Ohmic current for the CH4 films was explained by assuming the widening of the σ--σ * gap. Similar diode-like behavior was observed with the sputtered film. The last part of the work deals with the growth mechanism of aligned CNTs and their field emission (FE) properties. Nanotubes were grown at 700 0C on Ni coated (thickness 40 nm, 70 nm, and 150 nm) Si substrate using a mixture of CH4 and H2 gas. Microwave power of 500 Watts was optimized for nanotube growth. Nickel nanoparticle formation mechanism from a continuous Ni film was explained by considering the stress that is generated due to the difference in thermal expansion coefficients of Si and Ni at 700 oC. Though the thicker film such as 150 nm does not form nanoparticle due to stress, hydrogen induced fragmentation of the film due the brittleness of the film even causes formation of finer nanoparticles. A substrate bias in the range 0— 250 V was used to align the nanotubes. Perfectly aligned CNTs were obtained at -250 V substrate bias. The density of the tubes varied from 108 —109 / cm2 while its length was 0.5 — 2 μ m. Due to hydrogen induced fragmentation of the films, 150 nm Ni thick film showed smallest diameter 2 — 5 nm CNTs. 40 nm films showed nanotube diameter of 10 — 30 nm and 150 — 300 nm while 70 nm showed 10 — 30 nm diameter nanotubes. Diameter of the nanotubes was estimated using transmission electron microscopy (TEM). Field emission analysis of these CNTs was done using Fowler-Nordheim (F-N) plot and the investigation revealed that the field emission properties strongly depend on density and aspect ratios. The non-linearity in the F-N plot or current saturation phenomena was explained in terms of change in work function due to heating effect during FE which was pronounced in case of longer nanotube. Suitable efficient cold-cathode emitters for a particular usage (assuming that the variables are applied field and emission current) could be designed from the obtained results. An ammonia gas sensor using thick nonaligned CNTs was realized. For this purpose a thick film of CNTs (~ 0.5 μm) was deposited. This sensor can detect 100 ppm level of ammonia. About 1.5 — 4.5 % change of resistance depending on ammonia concentration (100 —1000 ppm) was observed.

The broad theme of the present research investigation is Ion Assisted Deposition of thin films and its effect on the properties of thin films. Though this activity has been of interest to researchers for more than a decade, the development of different types of ion sources with control over the ion flux and energy, makes it a current topic of interest. Ion assisted deposition was successful in depositing thin films of many material with desired qualities, however, there are certain class of materials whose deposition has been rather difficult. This has mainly been attributed to higher energies and low ion flux of conventional ion sources. The advent of ECR ion sources for thin film deposition has given impetus to the deposition of such materials. This is due to the low energy high-density plasma generated in this type of sources. Hitherto, these sources were widely used in PECVD techniques and only recently the importance of ECR sources in PVD techniques has been realized. This thesis is on the development of ECR plasma source for ion assisted deposition of thin films using PVD techniques. This thesis is organized into six chapters. The first chapter gives an introduction on the ion assisted growth of thin films and the importance of ECR plasma. A detailed discussion on various aspects of ECR sources has been included. The design details on the development of ECR source have been discussed in the second chapter. The performance of ECR source as analyzed by the Langmuir probe are also discussed. Variation of plasma parameters like ion density, electron temperature, plasma potential and floating potential as a function of pressure and microwave power have been studied using Langmuir probe analysis. An ion density of the order of 1011/cm3 was measured at a distance of 8 cm from the plasma source with a microwave power of 400 watts. This was comparable to the ion density reported in downstream plasma of ECR sources. The behavior of plasma parameters with variation in microwave power and pressure was explained on the basis of microwave transmission above critical ion density and the microwave power absorption. The uniformity of the plasma parameters at the substrate position (29 cm from the ECR source) was found to be ± 2% over a diameter of 12 cm, which makes the ion source suitable for ion assisted deposition. The third chapter deals with the simulation and experimental study of the ECR sputtering process. ECR sputter type sources are equipped with cylindrical targets. The sputtered flux distribution on the substrate depends on target geometry, sputtering pressure and target-substrate distance. The effect of cylindrical geometry on the distribution of sputtered flux has been simulated by Monte Carlo methods. It is found that the sputtered flux distribution at different pressures and target-substrate distances in ECR sputter type source differs from the conventional glow discharge sputtering system equipped with planar targets. The simulated results are compared with the experimental results. The simulated data agree very well with the experimental data. The deposition and characterization of the TiN thin films for diffusion barrier applications in copper metallization have been discussed in the fourth chapter. Titanium nitride films are prepared by ECR sputtering. The effect of high density ion bombardment on the morphology, orientation and resistivity of the films was studied. It was observed that films with atomic smoothness could be prepared by ECR sputtering. Also the high density ion bombardment has been found to be effective for the film growth in (100) orientation. The behavior of TiN films deposited by this method as a diffusion barrier in copper metallization has been investigated. The resistivity measurements and RBS depth profile studies showed that up to 700°C there is no diffusion of copper into silicon. This shows that ECR sputtered TiN can be used as an effective diffusion barrier in copper metallization. The fifth chapter contains investigations on the ECR assisted growth of silicon nitride films. The films are characterized for composition, morphology and chemical bonding using AES, RBS, AFM, XPS and FTIR. AFM studies revealed that ion bombardment results in the reduction of surface roughness, which indicates dense film growth. The effect of ion assistance on the optical and electrical properties is studied in detail. Films prepared with microwave power ranging from 100 to 200 watts are having bandgap and refractive index of 4.9 eV and 1.92 respectively. Interface state density of silicon nitride films prepared in the above mentioned range was found to be 5x10 10 eVcm2. These films exhibited a resistivity of 10 13 Ω, cm and critical field of 4 MV/cm. The electrical conductivity in these films has been explained on the basis of Poole and Frenkel conduction. The low value of interface state density, higher resistivity, and critical field show that good quality SiN4 films can be deposited with low energy high density ECR plasma. A detailed summary of this research investigation has been discussed in the last chapter. The thesis is concluded with a discussion on the need of focused ECR source to establish ECR assisted deposition as a versatile technique for the growth of thin films.

Cette thèse porte sur l'étude expérimentale de la production d’ions négatifs (H-) par des sources multi-dipolaires microondes (2.45 GHz) fonctionnant à la Résonance Cyclotron des Electrons (RCE). Les sources H- sont nécessaires aux accélérateurs de haute énergie et surtout pour les systèmes d’injection de neutres à haute énergie pour le chauffage des plasmas de fusion. Pour cette étude, deux sources (Prometheus I et ROSAE III) ont été conçues, fabriquées et étudiées. Ces deux sources sont munies de réseaux 2D des sources multi-dipolaires. Il est prouvé que la formation des ions négatifs dans ces sources d'ions, est dû à un mécanisme de production en volume : l'attachement dissociatif des électrons de faible énergie sur des molécules ro-vibrationallement excitées. Contrairement aux sources impliquant des réactions de surface, la production en volume a l’avantage de fonctionner sans césium. Une étude détaillée des principes fondamentaux de la production de H- est réalisée, et les voies possibles pour d'optimisation sont explorées au moyen de : sondes électrostatiques, photodetachment laser, spectroscopie d'émission optique dans la région spectrale du visible et de l'ultraviolet du vide et finalement par spectroscopie d'absorption et de fluorescence induite dans la région spectral de l'ultraviolet du vide en utilisant radiation synchrotron dans un montage expérimental spécial (SCHEME). Analytiquement:La source "Prometheus I" est d'abord étudiée en détails, dans une large gamme de conditions expérimentales (par exemple, pression, puissance, position des zones RCE). Cette étude souligne l’efficacité de production des ions H- en volume, et dévoile une fenêtre de fonctionnement optimal et des voies d'optimisation pour atteindre de plus fortes densités d'ions H-. La contribution du processus d'attachement dissociatif et de l'ionisation résonnante des neutres, à la production H- pour cette source ont été évaluée et la prépondérance de la première finalement confirmée par un modèle rendant compte du bilan des créations et pertes d’espèces.En raison de l'importance des molécules ro-vibrationnallement excitées lors du processus d'attachement dissociatif, l'étude se concentre sur leurs réactions de formation. Deux réactions de formation sont étudiées par des expériences dédiées : la désorption recombinative des atomes d'hydrogène à la surface de divers matériaux ("ROSAE III" et "SCHEME") et l'excitation par impact d'électrons à travers les états singulets temporaires ("Prometheus I"). L'étude de la désorption recombinative a été appréhendée de deux façons différentes. Avec la source ROSAE III, l'impact indirect du processus pour la production d'ions négatifs, à travers la formation de molécules ro-vibrationnellement excitées, a été évaluée dans les plasmas RCE. Dans la deuxième approche, la source "SCHEME" a été conçue pour l'étude de la désorption recombinative des atomes en utilisant le rayonnement synchrotron. La formation des états vibrationnels suite à l’excitation des états singulets, dans la source "Prometheus I" a été étudiée par des mesures d'émission de l'ultraviolet du vide.Une étude qui combine la spectroscopie d'émission de l'ultraviolet du vide, le photodétachement et la caractérisation de la cinétique des électrons par sondes électrostatiques, a permis l'identification des facteurs qui limitent la production d'ions négatifs dans le plasma RCE de "Prometheus I". Des perspectives pour surmonter ces limitations sont finalement proposées. / The present PhD thesis is devoted to the experimental study of hydrogen negative ion (H-) production in microwave-driven (2.45 GHz) multi-dipolar Electron Cyclotron Resonance (ECR) plasma sources. H- sources are required in high-energy accelerators and more importantly in neutral beam injection systems for fusion plasma heating. Towards this directions, two sources (namely, "Prometheus I" and "ROSAE III") are designed, fabricated and studied. Both sources are driven by 2D networks of dipolar ECR elementary sources. It is proven that, negative ion formation in these ion sources is governed by the volume production mechanism, which mostly refers to the dissociative attachment of low energy electrons to vibrationally excited molecules. Contrary to the so called surface sources, volume production sources have the advantage of cesium-free operation. Extended experimental study on fundamental principles of H- production is realized, and possible ways for potential source optimization are tested by means of: electrostatic probes, laser photodetachment, optical emission spectroscopy, both in the visible and vacuum ultra-violet spectral range and finally, vacuum-ultraviolet absorption and induced fluorescence spectroscopy using synchrotron radiation in a specially designed setup ("SCHEME"). Analytically:The source "Prometheus I" is initially studied in detail (EEDF, H- density, optical emission spectra etc), under a wide range of experimental conditions (e.g., pressure, power, ECR-zone location), proving its efficiency for H- volume production, and unveiling optimum operational window and paths for obtaining higher H- densities. The contribution of the dissociative attachment process and neutral resonant ionization to H- production in this source, is evaluated, and the dominance of the former is finally confirmed by an equilibrium model.Due to the importance of the ro-vibrationally excited molecules to the dissociative attachment process, the study is focused on their formation reactions. Two formation reactions are considered by adequately adapted experiments: the recombinative desorption of hydrogen atoms on the surface of various materials (ROSAE III and SCHEME) and the electron impact excitation through temporary singlet states (Prometheus I). The study of recombinative desorption is approached in two different ways. With the source ROSAE III, the indirect impact of the process to the production of negative ions, through the formation of ro-vibrationally excited molecules, is evaluated in ECR plasmas. In the second approach, the source SCHEME is designed for the independent investigation of the recombinative desorption of unexcited atoms using synchrotron radiation based diagnostics. The formation of vibrational states through singlet excitation in the source "Prometheus I" is studied by vacuum-ultraviolet emission measurements.A study that combined vacuum-ultraviolet emission spectroscopy, photodetachment and the characterization of electron kinetics with electrostatic probes, allowed the identification of the factors that limit negative ion production in the ECR plasma of "Prometheus I". Perspectives for overcoming these limitations are finally proposed.