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Growth modes in two-dimensional heteroepitaxy on an elastic substrateKatsuno, Hiroyasu, Uemura, Hideaki, Uwaha, Makio, Saito, Yukio 15 February 2005 (has links)
No description available.
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Investigation of mercury cadmium telluride heterostructures grown by molecular beam epitaxySewell, Richard H. January 2005 (has links)
[Truncated abstract] Infrared radiation detectors find application in a wide range of military and civilian applications: for example, target identification, astronomy, atmospheric sensing and medical imaging. The greatest sensitivity, response speed, and wavelength range is offered by infrared detectors based on HgCdTe semiconductor material, the growth and characterisation of which is the subject of this thesis. Molecular Beam Epitaxy (MBE) is a versatile method of depositing layers of semiconductor material on a suitable crystalline substrate. In particular, MBE facilitates the growth of multilayer structures, thus allowing bandgap engineered devices to be realised. By modulating the bandgap within the device structure it is possible to improve the sensitivity or increase the operating temperature of photodetectors when compared to devices fabricated on single layer material. Furthermore, dual-band detectors may be fabricated using multi-layered HgCdTe material. The bulk of this thesis is concerned with the development of the MBE process for multilayer growth, from modelling of the growth process to characterisation of the material produced, and measurement of photoconductive devices fabricated on these wafers. In this thesis a previously published model of HgCdTe growth by MBE is reviewed in detail, and is applied to the growth of double layer heterostructures in order to determine the optimum method of changing the mole fraction between layers. The model has been used to predict the change in the temperature of the phase limit when the mole fraction and growth rate change suddenly as is the case during growth of an abrupt heterostructure. Two options for growth of an abrupt heterostructure were examined (a) modulating the CdTe flux and (b) modulating the Te flux. The change in the phase limit temperature between the layers was calculated as being 4:1±C for option (a) and 5:2±C for option (b) when growing a Hg(0:7)Cd(0:3)Te/Hg(0:56)Cd(0:44)Te heterostructure
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Issues for p-type doping of GaN with Be and Mg grown by rf-plasma assisted molecular beam epitaxyLee, Kyoungnae. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2007. / Title from document title page. Document formatted into pages; contains xvi, 145 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 142-145).
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Construction of the preparation, growth and characterization chamber of molecular beam epitaxy system and some studies of the iron-gallium nitride system with a view to spintronics applicationsHui, I Pui. January 2007 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2007. / Also available in print.
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Growth of AlInN and zinc blende GaN by molecular beam epitaxyShi, Min, January 2007 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2008. / Also available in print.
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Effect of fluid dynamics and reactor design on the epitaxial growth of gallium nitride on silicon substrate by metalorganic chemical vapor depositionGao, Yungeng. January 2000 (has links)
Thesis (Ph. D.)--Ohio University, March, 2000. / Title from PDF t.p.
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Investigation of mercury cadmium telluride heterostructures grown by molecular beam epitaxy /Sewell, Richard H. January 2005 (has links)
Thesis (Ph.D.)--University of Western Australia, 2005.
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Novel elemental CSS reactor design and application to ZnCdTe deposition /Rascón Antillon, Luis Jacobo, January 2008 (has links)
Thesis (M.S.)--University of Texas at El Paso, 2008. / Title from title screen. Vita. CD-ROM. Includes bibliographical references. Also available online.
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Photoluminescence investigation of compensation in nitrogen doped ZnSeMoldovan, Monica. January 1999 (has links)
Thesis (Ph. D.)--West Virginia University, 1999. / Title from document title page. Document formatted into pages; contains xiv, 154 p. : ill. Includes abstract. Includes bibliographical references (p. 148-154).
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Epitaxial graphene films on SiC : growth, characterization, and devices /Li, Xuebin January 2008 (has links)
Thesis (Ph.D.)--Physics, Georgia Institute of Technology, 2008. / Committee Chair: de Heer, Walter; Committee Member: Chou, Mei-Yin; Committee Member: First, Phillip; Committee Member: Meindl, James; Committee Member: Orlando, Thomas
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