Global ETD Search

51	Characterization of oxygen and carbon effects in silicon material and MOSFET devices Haddad, Homayoon 20 February 1990 (has links) Graduation date: 1990 Silicon
52	Modeling 1/f noise in a-Si:H field-effect transistors Xu, Yang 17 October 2008 (has links) Hydrogenated amorphous silicon (a-Si:H) thin film transistors (TFTs) are used as switching elements in large area active matrix liquid crystal displays and various image sensing devices for radiation detection. The noise inherent in the a-Si:H TFTs contributes to the overall noise figure of such devices and degrades the signal to noise ratio; therefore, the noise is an important factor in the design of the devices. The noise of the a-Si:H TFTs has been studied experimentally, but the origin of the noise is not understood. <p> This work calculates the noise of the a-Si:H TFTs based on a simulation of operation of the TFTs and the hypothesis that the device noise is due to the intrinsic noise of the a-Si:H material. An a-Si:H TFT with an inverted-staggered structure has been simulated by numerically solving the fundamental transport equations for various gate and drain-source voltages. The drain-source curves derived from the simulation agree qualitatively with the experimental results: both the linear and saturated regions are observed. The low frequency noise was calculated based on the charge density distribution in the channel obtained from the simulation and the known dependence of the noise in the a-Si:H on the charge density, Hooges relation. The calculated noise power increases with the drain-source voltage and is inversely proportional to the gate voltage or the effective channel length. The curves agree qualitatively with the experimental results. The calculated noise power agrees quantitatively with the experiments when the scaling parameter in Hooges relation, , is set to . This value agrees with the experimentally determined value for a-Si:H. The results are consistent with the hypothesis that the low frequency noise in the a-Si:H TFTs is due to the material itself. a-Si:H Field-Effect Transistors 1/f Noise
53	Bandgap engineering in vertical MOSFETs Chen, Xiangdong. January 2001 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI/Dissertation Abstracts International.
54	Analytical and compact modeling of highly asymmetrical independent double-gated transistors a dissertation presented to the faculty of the Graduate School, Tennessee Technological University / Jeedigunta, Manjeera, January 2009 (has links) Thesis (Ph.D.)--Tennessee Technological University, 2009. / Title from title page screen (viewed on Feb. 10, 2010). Bibliography: leaves 146-153.
55	SiGe, SiGeC, and SiC MOSFET simulation, optimization, and fabrication Shi, Zhonghai. January 2002 (has links) Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
56	Modeling of narrow-width effect in MOSFET / Lai, Pui-to. January 1984 (has links) Thesis--Ph. D., University of Hong Kong, 1985.
57	Characterization of hot-carrier induced degradation via small-signal characteristics in mosfets / Lau, Mei Po Mabel. January 2001 (has links) (PDF) Thesis (Ph. D.)--University of Queensland, 2002. / Includes bibliographical references.
58	Analyses of device characteristics in low voltage p-, new material n-, and dual-channel organic field-effect transistors Jeong, Yeon Taek, 1971- 29 August 2008 (has links) Not available / text Organic field-effect transistors Dielectrics Transport theory
59	Bandgap engineering in vertical MOSFETs Chen, Xiangdong, 1972- 07 March 2011 (has links) Not available / text
60	Semiclassical Monte Carlo simulation of nano-scaled semiconductor devices Ghosh, Bahniman, 1971- 18 August 2011 (has links) Not available / text

Search results