Approved for public release, distribution is unlimited / The performance of coherent and noncoherent RAKE receivers over a fading channel in the presence of pulse-noise interference and additive white Gaussian noise is analyzed. Coherent RAKE receivers require a pilot tone for coherent demodulation. Using a first order phase-lock-loop to recover a pilot tone with additive white Gaussian noise causes phase distortions at the phase-lock-loop output, which produce an irreducible phase noise error floor for soft decision Viterbi decoding. Both coherent and noncoherent RAKE receivers optimized for additive white Gaussian noise perform poorly when pulse-noise interference is present. When soft decision convolutional coding is considered, the performance degrades as the duty cycle of the pulse-noise interference signal decreases. The reverse is true for hard decision Viterbi decoding, since fewer bits experience interference and bit errors with high noise variance cannot dominate the decision statistics. Soft decision RAKE receiver optimized for pulse-noise interference and additive white Gaussian noise performed the best for both the coherent and noncoherent RAKE receivers. This receiver scales the received signal by the inverse of the variance on a bit-by-bit basis to minimize the effect of pulse-noise interference. The efficacy is demonstrated by analytical results, which reveal that this receiver reduces the probability of bit error down to the irreducible phase noise error floor when pulse-noise interference is present. This demonstrates how important it is to design the receiver for the intended operational environment. / Civilian, Department of Defense

Thesis. 1975. Ph.D.--Massachusetts Institute of Technology. Dept. of Electrical Engineering and Computer Science. / Vita. / Includes bibliographical references. / Ph.D.

The design of two 2.4GHz CMOS LC balanced oscillators in the 0.25μm National BiCMOS process for Bluetooth specifications is presented. These oscillators achieve low phase noise with low power consumption. At a frequency offset of 500KHz from the 2.11GHz carrier, the measured phase noise is -101.9dBc/Hz for the NMOS oscillator with a power dissipation of 12.5mW. The complementary oscillator has a phase noise of -103.6dBc/Hz at 500KHz offset from the 2.19GHz carrier and a power dissipation of 6.25mW from a 2.5V power supply. A wide tuning range of 16% is obtained by means of a PMOS varactor in conjunction with an array of switched capacitors. / Graduation date: 2002

It is well known from Mermin-Wagner theorem that a two dimensional(2D) system with continuous symmetry can have no long-range order at finite temperature. However such systems can undergo a transition from a low temperature phase with quasi-long range order to a disordered phase at high temperatures. This is known as Berezinskii Kosterlitz Thouless (BKT) transition. The BKT transition is characterized by the presence of bound vortex pairs at low temperature which dissociate into free vortices above the critical temperature and has been observed in thin superconducting films, 2D superfluids, 2D liquid crystals etc. In this thesis work, we have used resistance/current fluctuations (low frequency/shotnoise) as a probe to investigate the BKT transition in different 2D systems. This work can be divided into three parts: In the first part, we probe the ground state of interacting electrons in 2D in the presence of disorder. We show that at low enough temperatures (~ 270mK),the conductivity tends to zero at a nonzero carrier density with a BKT-like transition. Our experiments with many two dimensional electron systems in GaAs/AlGaAs heterostructures suggest that the charge transport at low carrier densities is due to the melting of an underlying ordered ground state through proliferation of topological defects. Independent measurement of low-frequency conductivity noise supports this scenario. In the second part, we probe the presence of long-range correlations in phase fluctuations by analyzing the higher-order spectrum of resistance fluctuations in ultrathin NbN superconducting films. The non-Gaussian component of resistance fluctuations is found to be sensitive to film thickness close to the transition, which allows us to distinguish between mean field and BKT type superconducting transitions. The extent of non-Gaussianity was found to be bounded by the BKT and mean field transition temperatures and depends strongly on the roughness and structural inhomogeneity of the superconducting films. In the final part of the thesis, we explore the transport mechanism in disordered 2D superconductors using shot noise. The resistivity shows an activated transport in the patterned ultrathin films of NbN at low temperatures signifying the presence of large scale inhomogeneities in the sample. The measurement of current fluctuations yield a giant excess noise at low temperatures which eventually decreases below the measurement background at a temperature corresponding to the normal state of the original sample(before patterning). We attribute the enhancement in the shot noise to a possible occurrence of multiple Andreev reflections occurring in a network of SNS(superconductor-normal-superconductor) junctions formed due to the interplay of disorder and superconducting fluctuations.

Orientador: Carlos Alberto dos Reis Filho / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Elétrica e de Computação / Made available in DSpace on 2018-08-20T21:29:13Z (GMT). No. of bitstreams: 1 OtaloraBuitrago_DianaPatricia_M.pdf: 4654440 bytes, checksum: 441fc975cdf8f7e9af7978587263e135 (MD5) Previous issue date: 2012 / Resumo: Este trabalho descreve os procedimentos experimentais e as justificativas que levaram à determinação de uma relação entre a densidade de tensão de ruído em altas frequências e a temperatura da junção de um LED branco de alta eficiência. As medições da densidade de tensão de ruído foram realizadas polarizando o LED com correntes na faixa de 1'mi'A até 326mA e temperaturas de junção desde 24ºC até 120ºC. A realização deste trabalho, que é de cunho exploratório, foi motivada pela busca de mecanismos que permitam a avaliação contínua da temperatura da junção de um LED em operação, tendo em vista sua grande influência na durabilidade do LED. A crescente expansão do uso do LED em lugar das lâmpadas incandescentes e fluorescentes está mudando a indústria da iluminação, trazendo com isto novos desafios. Um destes desafios está na melhoria dos circuitos de acionamento (drivers e fontes de alimentação), que hoje respondem por 59% das falhas nos LEDs. Pesa na confiabilidade destes circuitos a falta do controle da temperatura de junção. Os resultados deste trabalho, apesar de restritos à caracterização de apenas duas amostras de um LED branco de alta eficiência, mostraram nitidamente a presença de um ruído de excesso cuja amplitude tem forte correlação com a temperatura da junção. Foi constatado, nas duas amostras caracterizadas, que a densidade de tensão de ruído medida é equivalente ao que produz um resistor de aproximadamente 13K'ômega' / Abstract: This paper describes the experimental procedures and the reasons that led to determining a relationship between the high-frequencies noise voltage density and the junction temperature of a highefficiency white LED. the measurements of noise voltage density were performed biasing the LED with currents in the range of 1'mi'A up to 326mA and temperatures junction from 24ºC to 120ºC. This work, which is exploratory, was motivated by the search for mechanisms that allow to continually assess the junction temperature of an LED in operation, given its great influence on the lifetime of the LED. The growing expansion of the use of LEDs instead of incandescent and fluorescent bulbs is changing the lighting industry, bringing with it new challenges. One of these challenges is the improvement of the power supplies and driver circuits, which now account for 59% of failures in LEDs. The lack of control of the LED junction temperature in these circuits is one of the issues that respond to their reduces reliability. The outcome of the herein presented work, although only restricted to the characterization of two samples of a high-efficiency white LED, clearly showed the presence of an excess noise whose amplitude has strong correlation with the junction temperature. It was found from the two tested samples, that the measure noise voltage density is equivalent to what is produced by a resistor of approximately 13K'omega' / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Le développement des technologies de communication et de l’information nécessite des composants semi-conducteurs ultrarapides et à faible niveau de bruit. Les transistors bipolaires à hétérojonction (TBH) sont des dispositifs qui visent des applications à hautes fréquences et qui peuvent satisfaire ces conditions. L’objet de cette thèse est l’étude expérimentale et la modélisation du bruit haute fréquence des TBH Si/SiGe:C (technologie STMicroelectronics) et InP/InGaAs (III-V Lab Alcatel-Thales).Accompagné d’un état de l’art des performances dynamiques des différentes technologies de TBH, le chapitre I rappelle brièvement le fonctionnement et la caractérisation des TBH en régime statique et dynamique. La première partie du chapitre II donne la description des deux types de TBH, avec l’analyse des performances dynamiques et statiques en fonction des variations technologiques de ceux-ci (composition de la base du TBH SiGe:C, réduction des dimensions latérales du TBH InGaAs). Avec l’aide d’une modélisation hydrodynamique, la seconde partie montre l’avantage d’une composition en germanium de 15-25% dans la base du TBH SiGe pour atteindre les meilleurs performances dynamiques. Le chapitre III synthétise des analyses statiques et dynamiques réalisées à basse température permettant de déterminer le poids relatif des temps de transit et des temps de charge dans la limitation des performances des TBH. L’analyse expérimentale et la modélisation analytique du bruit haute fréquence des deux types de TBH sont présentées en chapitre IV. La modélisation permet de mettre en évidence l’influence de la défocalisation du courant, de l’auto-échauffement, de la nature de l’hétérojonction base-émetteur sur le bruit haute fréquence. Une estimation des performances en bruit à basse température des deux types de TBH est obtenues avec les modèles électriques. / In order to fulfil the roadmap for the development of telecommunication and information technologies (TIC), low noise level and very fast semiconductor devices are required. Heterojunction bipolar transistor has demonstrated excellent high frequency performances and becomes a candidate to address TIC roadmap. This work deals with experimental analysis and high frequency noise modelling of Si/SiGe:C HBT (STMicroelectronics tech.) and InP/InGaAs HBT (III-V Lab Alcatel-Thales).Chapter I introduces the basic concepts of HBTs operation and the characterization at high-frequency. This chapter summarizes the high frequency performances of many state-of-the-art HBT technologies. The first part of chapter II describes the two HBT sets, with paying attention on the impact of the base composition (SiGe:C) or the lateral reduction of the device (InGaAs) on static and dynamic performances. Based on TCAD modelling, the second part shows that a 15-25% germanium composition profile in the base is able to reach highest dynamic performances. Chapter III summarizes the static and dynamic results at low temperature, giving a separation of the intrinsic transit times and charging times involved into the performance limitation. Chapter IV presents noise measurements and the derivation of high frequency noise analytical models. These models highlight the impact of the current crowding and the self-heating effects, and the influence of the base-emitter heterojunction on the high frequency noise. According to these models the high frequency noise performances are estimated at low temperature for both HBT technologies.

To analyse drill samples in a mine, a scanner that uses a gamma ray detector can be used. The scanner can analyse the drill sample to quickly see the elements present in the sample without destroying it. To improve the performance of the scanner, the electric signal from the detector needs to be less noisy, and different pulse shaping methods, filters and smoothers can be used on the sampled data to achieve an improved performance. In this master thesis, the electric noise model of the electronics around the detector was modeled, and analysed. Different pulse shaping method, filters and smoothers was also tested to see which method gave the best performance in FWHM sense. The Full Width at Half Maximum (FWHM) is the energy resolution of a detector, and is defined as the full width of a photopeak at the half maximum. The noise model of the schematic for the preamplifier was made by hand with support from MATLAB. The resulting noise model was compared between MATLAB and LTspice, and the conclusion is that the JFET is the main contributor of the significant noise, contributing to 98 % of the total noise at 10 GHz. The adopted filters and pulse shaping method are, matched filter, custom filter, CR-RC shaping, mean filter, median filter and clustering. The results from the tests indicated that custom filter with a FWHM of 1.96 keV and CR-RC with a FWHM of 1.67 keV shaping were more accurate than the matched filter with the FWHM of 5.1 keV. But the results also showed that it is important to take into account the waveform variance, due to inherent properties in the detector, with this consideration the FWHM of CR-RC shaper was improved from 2.29 keV to 1.67 keV. The clustering method was the most promising method but due to time constraints this method was never fully tested and no FWHM value was achieved.