No description available.

No description available.

Leung Wing-Yan. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2001. / Includes bibliographical references (leaves 131-135). / Abstracts in English and Chinese. / Chapter Chapter 1 --- Introduction --- p.1 / Chapter Chapter 2 --- Background Theory --- p.3 / Chapter 2.1 --- Low-Pass Network Synthesis --- p.3 / Chapter 2.2 --- Maximally Flat Attenuation Characteristic --- p.5 / Chapter 2.3 --- Chebysheff Attenuation Characteristic --- p.6 / Chapter 2.4 --- Low-Pass to Band-Pass Transformation --- p.8 / Chapter 2.5 --- Impedance- and Admittance- Inverters --- p.9 / Chapter 2.6 --- Coupled-Resonator Filters --- p.13 / Chapter Chapter 3 --- New Circuit Topologies for Band-Pass Filters --- p.18 / Chapter 3.1 --- Locations of Transmission Zeros --- p.18 / Chapter 3.2 --- Circuit Topologies for Generation of Transmission Zeros --- p.18 / Chapter 3.3 --- Zeros at Lower Stop-Band (Category 1) --- p.21 / Chapter 3.3.1 --- Capacitor Insertions --- p.21 / Chapter 3.3.2 --- Design Equations for Configuration I --- p.22 / Chapter 3.3.3 --- Design Equations for Configuration II --- p.24 / Chapter 3.3.4 --- Coupling between Components --- p.28 / Chapter 3.3.5 --- Design Equations for Configuration III --- p.28 / Chapter 3.4 --- Zeros at Upper Stop-Band (Category 2) --- p.32 / Chapter 3.4.1 --- Inductor Insertions --- p.32 / Chapter 3.4.2 --- Design Equations for Configuration IV --- p.33 / Chapter 3.4.3 --- Design Equations for Configuration V --- p.35 / Chapter 3.4.4 --- Coupling between Components --- p.38 / Chapter 3.4.5 --- Design Equations for Configuration VI --- p.39 / Chapter 3.4.6 --- Design Equations for Configuration VII --- p.43 / Chapter 3.5 --- Zeros at Both Lower and Upper Stop-band (Category 3) --- p.46 / Chapter 3.5.1 --- Component Insertions --- p.46 / Chapter 3.5.2 --- Design Equations for Configuration VIII --- p.49 / Chapter 3.5.3 --- Design Equations for Configuration IX-XI --- p.49 / Chapter 3.5.4 --- Coupling between components --- p.50 / Chapter 3.5.5 --- Design Equations for Configuration XII --- p.51 / Chapter Chapter 4 --- Design Considerations --- p.52 / Chapter 4.1 --- Analytical Limitation --- p.53 / Chapter 4.1.1 --- "Conventional Band-Pass Filter, Configuration II, III, V and VI" --- p.53 / Chapter 4.1.2 --- Configuration I --- p.55 / Chapter 4.1.3 --- Configuration II --- p.57 / Chapter 4.1.4 --- Configuration IV --- p.59 / Chapter 4.1.5 --- Configuration VII-XII --- p.61 / Chapter 4.1.6 --- Summary --- p.61 / Chapter 4.2 --- Practical Limitation --- p.62 / Chapter 4.2.1 --- Configuration I --- p.64 / Chapter 4.2.2 --- Configuration II --- p.65 / Chapter 4.2.3 --- Configuration III --- p.67 / Chapter 4.2.4 --- Configuration IV --- p.69 / Chapter 4.2.5 --- Configuration V --- p.71 / Chapter 4.2.6 --- Configuration VI --- p.73 / Chapter 4.2.7 --- Summary --- p.75 / Chapter 4.3 --- Comparisons between Different Configurations --- p.76 / Chapter 4.3.1 --- Category 1 (Transmission Zeros at Lower Stop-Band) --- p.76 / Chapter 4.3.2 --- Category 2 (Transmission Zeros at Upper Stop-Band) --- p.79 / Chapter 4.3.3 --- Category 3 (Transmission Zeros at both side of the Stop-Band) --- p.82 / Chapter Chapter 5 --- LTCC Technology --- p.84 / Chapter 5.1 --- Definition --- p.84 / Chapter 5.2 --- Fabrication Process --- p.85 / Chapter 5.3 --- Material Used --- p.86 / Chapter 5.3.1 --- Conductive Materials --- p.86 / Chapter 5.3.2 --- Ceramic Materials --- p.87 / Chapter 5.4 --- Advantages of LTCC Technology --- p.87 / Chapter 5.5 --- Recent Development in LTCC Technology --- p.89 / Chapter 5.6 --- Design Rules --- p.90 / Chapter 5.7 --- Realization of Passive Elements in LTCC --- p.91 / Chapter 5.7.1 --- Capacitors --- p.91 / Chapter 5.7.2 --- Inductors --- p.96 / Chapter 5.7.3 --- Effect of Ground Plane on Inductance Realization --- p.99 / Chapter Chapter 6 --- Implementation and Characterization of LTCC Band-Pass Filter --- p.101 / Chapter 6.1 --- Design Procedures --- p.101 / Chapter 6.2 --- Schematic Design of LTCC Filters --- p.103 / Chapter 6.2.1 --- Category1 --- p.103 / Chapter 6.2.2 --- Category2 --- p.104 / Chapter 6.2.3 --- Category3 --- p.105 / Chapter 6.3 --- Design and Optimization --- p.106 / Chapter 6.4 --- Performance Evaluation --- p.117 / Chapter 6.4.1 --- TRL Calibration Method --- p.119 / Chapter 6.4.2 --- Experimental Results --- p.126 / Chapter Chapter 7 --- Conclusion and Recommendations for Future Work --- p.129 / References --- p.131 / Author´ةs Publication --- p.135 / Appendix A CAD Tool for LTCC Circuit Prototyping --- p.136 / Appendix B Computer Program 1 Listing --- p.153 / Appendix C Computer Program 2 Listing --- p.170 / Appendix D Computer Program 3 Listing --- p.172

A variable gain, high linearity, low power baseband filter for WLAN applications is implemented in a 1.5 V 3 V 0.15 ��m CMOS process. This fourth-order low-pass filter, which is introduced in the transmit channel as a reconstruction filter between the D/A converter and the mixer, has a measured cut-off frequency of 9 MHz. The active-RC configuration has single amplifier biquads (SABs) to save power and is implemented using three-stage opamps with nested-Miller compensation for better linearity. It also features a special ��-to-Tee transformation network for the resistor arrays, used for frequency or gain trimming, in order to obtain higher linearity than conventional Sallen-Key circuits. The measured THD for a 2 V [subscript p-p] signal at 1 MHz is -72 dB. / Graduation date: 2004

published_or_final_version / Electrical and Electronic Engineering / Master / Master of Philosophy

No description available.

The design and implementation of Switched-Current (SI) ladder filters is described. SI filters require only a standard digital CMOS process and the power supply voltage requirement is low. SI circuits also can be potentially operated at higher frequencies than Switched-Capacitor (SC) filters due to the low-impedance wideband nodes of the current mirrors. A simple method has been developed to design SI ladder and biquadratic fllters with maximum dynamic range that leverages the well-established design methodologies of SC filters. A standard digital 2-micron n-well CMOS process has been used to implement two high-order ladder filters and two biquadratic filters. Simulations accurately predict the measured results of the first integrated SI filters. The area and power dissipation are comparable to the switched-capacitor technique. Analysis of the factors that effect dynamic range in SI filters is presented. The factors that contribute to harmonic distortion in the current-mode circuits are characterized and the relationships to maximum signal size are established. Using measurements of the input-referred noise from SI filters, the dynamic range is obtained. / Graduation date: 1991

No description available.

Two aids for the design of switched-capacitor filters (SCFs) are examined: breadboard modelling and computer simulations. A breadbroad was constructed based upon the same passive prototype of a seventh-order integrated filter. The breadboard met the original design specifications better than the integrated filter because the schematic and parasitics of the integrated filter were unknown. Three computer programs, SPICE, DIANA, and TCAPS, are compared to determine their abilities and limitations in SCF design. SPICE is of limited value since it models switched capacitors as resistors. DIANA and TCAPS directly simulate the digital nature of switched capacitors, so they track in their predictions of 1) increased passband ripple, 2) increased cutoff frequency, 3) increased third notch frequency, 4) increased OBR. On the basis of this comparison, it is not possible to determine if DIANA or TCAPS is the better program. However, both DIANA and TCAPS simulate SCFs far more accurately than SPICE. / Master of Science

Thesis (Ph.D.)--Massachusetts Institute of Technology, Dept. of Mechanical Engineering, 1982. / MICROFICHE COPY AVAILABLE IN ARCHIVES AND ENGINEERING. / Vita. / Bibliography: leaves 113-116. / by James R. Rinderle. / Ph.D.