An optically pumped far-infrared laser and superconducting magnet have been used to perform high resolution studies of the energy levels of neutral and negatively charged shallow donors in high purity n-GaAs and n-InP in magnetic fields where the dimensionless magnetic field gamma is approximately one (where gamma=hoc/(2R*), hoc is the cyclotron energy and R* is the Coulomb binding energy). The central cell structure caused by the presence of different shallow donor species has been studied on the 1s-2p+1,0 transitions of neutral shallow donors in undoped GaAs samples grown by molecular beam epitaxy, liquid phase epitaxy and vapour phase epitaxy (VPE). VPE material showed two new shallow donor species with negative central cell shifts. The ls-2p-1 transition at magnetic fields where gamma > 1 shows exceptionally well resolved central cell structure. Detailed structure at magnetic fields below the 1s-2p+2 transition is due to transitions from the is to higher excited states. Samples of undoped high purity InP grown by the VPE, metal organic chemical vapour deposition and bulk growth techniques have been studied. VPE samples always show a strong component related to sulphur though some also show a strong silicon related component, and some show up to 7 components. A bulk, sample showed two strong components shallower than silicon which may have negative central cell shifts. Transitions between the excited states of neutral shallow donors in GaAs have been studied. Recent theoretical work by Makado (1982) describes the transition energies very well. Clearly resolved central cell structure is observed on inter-excited state transitions involving the 2s state. The first unambiguous observation of negatively charged shallow donors (D-states) in GaAs is reported. Simultaneous observations of transitions involving D-states, the cyclotron resonance and inter-excited state transitions of neutral donors over a wide magnetic field range, 0.03 < gamma < 3.5, highlight the differences between the transitions and the relative effects of optical excitation, temperature, magnetic field and electric field bias.

M.Ing. (Electrical & Electronic Engineering) / Induction heating is a relatively old and established process. New switching devices and ideas are, however, resulting in much improved performance at reduced cost. Some of these devices are investigated in this thesis, and some new ideas presented. From a literature study a general review of the current state of the technology is given. The fundamental principles and limits of induction heating are discussed. Power electronic topologies for induction heating, as well as switching devices which can be used in these topologies, are compared and evaluated. From the knowledge gained, possible fields for improvement are identified. One such field is that of semiconductor switch drives, and a high-performance gate drive was developed. Using such fast drives, special attention must be given to the electromagnetic layout of the circuit. Another new field is that of integrated resonant elements. These elements find application in most resonant converters, and offer reduced weight and losses compared to conventional technologies. They are evaluated both experimentally and theoretically. A prototype induction heater was built, using a newly released switching device named a zero turn-off thyristor. The high-performance gate drive developed earlier was tested in the inverter and gave excellent results.

The purpose of this investigation is to compare high frequency to low frequency (50Hz) technologies. To accomplish this, two highly optimized candidate converters are built to champion each of the inverter classes. Both candidates are constrained to produce the same quasi-sinusoidal output waveforms in identical operating conditions. The low frequency inverter is designed with optimization of its output power quality and accurate loss characterization taken in mind. A new iron core design procedure is proposed that may predict core losses when using non-sinusoidal excitation. Experimental results indicate that it has a promising degree of accuracy. The high frequency candidate is designed using planar integration technology. A topology selection determines that a critical-conduction mode flyback is the most suitable option. Components are added the topology to allow resonant switching for reduced switching losses. Common-mode current arising from good capacitive coupling between windings in the planar coupled inductor is reduced using charge balancing technology. The novelty of the converter lies is in the fact that all passive components, barring the bulk of the input capacitance and the output capacitance, are incorporated into the single planar structure. Finally, a comparison of the inverters is made in the categories of power quality, regulation, efficiency, robustness and applicability to the application. The high frequency inverter is found to promise substantial advantages over the low frequency variety in most of these elements. / Dr. I.W. Hofsajer

M.Ing. (Electrical & Electronic Engineering) / Please refer to full text to view abstract

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Thesis is submitted in fulfilment of the requirements for the degree of Master of Science in Engineering to the Faculty of Engineering and Built Environment, University of the Witwatersrand, Johannesburg 2018 / Power electronic converters that convert DC to AC, or vice versa, require an energy buffer between the AC and DC ports of the converter to compensate for the instantaneous power mismatch. Electrolytic capacitors are mostly used for these buffering applications because of the high energy density when compared to other capacitors, but unfortunately this type of capacitor also has low reliability. This dissertation proposes a general solution from a fundamental approach to solve the required capacitor power requirements on the DC-bus of an inverter. From the resulting model, an alternative active filter design technique to reduce the required capacitance of the DC-bus capacitor of a single phase inverter is presented. In this model, the minimum and maximum voltages of the capacitor can be chosen and the corresponding waveforms are calculated. An optimum region for the choice of capacitor voltage is shown to visually illustrate the trade-offs between the capacitor voltage, capacitance and converter losses. In this optimum area the reduction in capacitance is enough to allow the elimination of electrolytic capacitors, while maintaining comparable volume. In this technique, the DC-bus capacitor is decoupled from the DC-bus to allow wide voltage variation and the power processed by the capacitor is directly controlled, instead of the bus voltage. The allowable voltage variation of the capacitor can also be selected to fit the application or traded off in favour of capacitance as chosen by the designer. This general solution is applicable to any bi-directional converter used to decouple the capacitor from the DC-Bus / XL2018

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M.Ing. (Electrical & Electronic Engineering) / Please refer to full text to view abstract

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