Dans la gamme de fréquence térahertz (THz), les sources et les détecteurs couramment utilisés en optique et en électronique présentent une chute de performances. Mon travail de thèse s’inscrit dans le cadre de la recherche de composants THz peu onéreux, compacts, accordables en fréquence et facile à intégrer. Le premier volet de mon travail de thèse concerne la détection THz et met à profit le couplage entre une onde incidente THz et des plasmons d’un gaz bidimensionnel d’électrons (2DEG) via des réseaux métalliques déposés au-dessus d’hétérostructures. Quatre puits quantiques à base de semi-conducteurs III/V(AlGaN/GaN, AlGaAs/GaAs, InAlN/GaN) et IV/IV (SiGe/Si/SiGe) ont été étudiés. Parmi les hétérostructures envisagées, celles réalisées à partir de matériaux III-N présentent les plus fortes résonances. Des mesures de spectre de transmission ont été effectuées avec un spectromètre à transformée de Fourier (FTIR) à température ambiante et cryogénique. Les modélisations numériques sont en bon accord avec les résultats expérimentaux. Une étude sur l’influence de la distribution homogène ou inhomogène du gaz d’électrons 2D est présentée. Le deuxième volet de la thèse concerne l’optimisation de la transmission THz. Les performances (dipsersions et les pertes) des guides d'onde planaires sont mal connues au THz. Nous avons choisi d’étudier des guides d’onde couramment utilisés en hyperfréquence. Dans un premier temps, la dispersion et les pertes (rayonnement, conduction et diélectrique) de lignes coplanaires (CPW) sur substrat polymère (BCB = benzocyclobutène) et substrat semiconducteur (InP) obtenues grâce à des modélisations numériques (Ansoft HFSS) entre 20 GHz et 1 THz sont présentées. Puis d’autres types de guides ont été envisagés tels que les lignes micro-ruban, à fente et triplaques sur substrat BCB avec HFSS et CST MWS. Leurs performances ont été comparées afin de dégager la structure la plus performante au THz. Des mesures entre 340 et 500 GHz ont pu aussi être réalisées pour les guides CPW. La comparaison avec les données numériques a montré un bon accord. / In the THz frequency gap between electronics and optics, the development of compact, tunable, less costly and room temperature operating sources, detectors, amplifiers and passive devices is growing. Electronic devices based on two dimensional (2D) plasmons in heterostructures open up the possibility of tunable emission and detection of THz radiation. For short distance THz transmission, the increased radiation loss as well as other types of loss (dielectric and ohmic loss) may handicap the applications of conventional planar waveguides well studied in the microwave band. Reevaluation of their propagation properties and comprehension of the physical nature of each kind of loss are necessary.This work is divided into two main sections. The first part deals with the optimization of THz resonant detection by quasi 2D plasmons-polaritons (PP) in the quantum wells (QW) among four heterostructures: III-V (AlGaN/GaN, InAlN/GaN, AlGaAs/GaAs) and IV-IV (SiGe/Si/SiGe). With the aid of metallic grating coupler, both ANSOFT HFSS and an indigenously developed program are used to investigate quantitatively the influences of structural parameters (grating period, metal strip width and thickness of barrier layer) and natural properties of 2D plasmons (electron concentration and mobility) on the PP resonances (frequency and amplitude) up to 5 THz. Transmission spectra of sample AlGaN/GaN have been measured by Fourier Transform Infrared Spectroscopy (FTIR) in 0.6-1.8 THz for various metal widths and at different temperatures to compare with the simulated results. At last, two types of modulated 2D electron gas in AlGaAs/GaAs are analyzed. One is the natural electron variation below and between metal fingers due to the difference between the barrier height at the interface metal/semiconductor and Fermi level pinning at the interface air/semiconductor. The other type is the forced modulated 2DEG by biasing voltage on metal fingers. These two parametric studies allow us to analyze and tune the frequency and amplitude of the THz detection. The second part separately studies the dispersions and attenuations of four waveguides (CPW, Microstrip, Stripline and Slotline) with the variation of geometric dimensions and properties of dielectric and metal by ANSOFT HFSS and CST MWS. Their performances are compared until 1 THz based on the same characteristic impedance. The advantages and the limitations of each waveguide are outlined and an optimal THz transmission line is proposed. Furthermore, preliminary measured attenuation of CPW in the frequency range 340-500 GHz are demonstrated and compared with numerical results. The design of transitions for adapting experimental probes by HFSS and the de-embedding method for extracting scattering and attenuation parameters of CPW by ADS are also presented..

Made available in DSpace on 2015-04-22T22:07:25Z (GMT). No. of bitstreams: 1 GERMINIANO_BOAS_QUEIROZ.pdf: 553070 bytes, checksum: 971c50083a34fa6f1ff0a18c8a40426f (MD5) Previous issue date: 2005-06-06 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior / In the present work were proposed models for the static dielectric function: the screening charge density, the structure factor, the pair distribution function and the interacting energy of the uniform electron gas. The parameters of the dielectric function are determined by imposing the charge conservation principle, the compressibility sum rule for large wavelength and the Kato s condition for the screening charge density at small distances. A similar model is adopted for the structure factor, which parameters are obtained from normalization of the pair distribution function and from the Kimball s cusp condition for the behavior of this function at small distances, as well as from the RPA limit of the structure factor at long wavelength. The imposition of these boundary condition leads to a set of non-linear equations which allows a complete analytical solution for the parameters of the theory. Besides of satisfying elfconsistence conditions, the obtained models are well behaved and leads to a positive-definite pair distribution function and a convergent screening charge density which exhibit Friedell s oscillations, as expected for an uniform electron gas. / No presente trabalho foram propostos modelos para a função dielétrica estática, a densidade de carga de blindagem, o fator de estrutura, a função distribuição de pares e a energia de interação do gás de elétron uniforme. Os parâmetros da função dielétrica são determinados impondo-se o princípio da conservação da carga, a regra da soma da compressibílidade para grandes comprimentos de onda e a condição de Kato para a densidade de carga de blindagem para pequenas distâncias. Um modelo similar é adotado para o fator de estrutura, cujos parâmetros são obtidos da normalização da função distribuição de pares e da condição de Kimball para o comportamento desta função a pequenas distância, bem com no limite RPA do fator de estrutura para longos comprimentos de onda. A imposição destas condições de contorno leva a um conjunto de equações não lineares que permitem uma solução completamente analítica dos parâmetros. Álem de satisfazerem a condição de autoconsistência, os modelos obtidos são bem comportados e levam a função de distribuição de pares positivo-definido e uma carga de blindagem convergente, que exibe oscilação de Friedel, como esperado para um gás de elétrons uniforme.

This thesis studies electron spin phenomena in lateral semi-conductor quantum dots/anti-dots and electron conductance in graphene nanoribbons by numerical modelling. In paper I we have investigated spin-dependent transport through open quantum dots, i.e., dots strongly coupled to their leads, within the Hubbard model. Results in this model were found consistent with experimental data and suggest that spin-degeneracy is lifted inside the dot – even at zero magnetic field. Similar systems were also studied with electron-electron effects incorporated via Density Functional Theory (DFT) in the Local Spin Density Approximation (LSDA) in paper II and III. In paper II we found a significant spin-polarisation in the dot at low electron densities. As the electron density increases the spin polarisation in the dot gradually diminishes. These findings are consistent with available experimental observations. Notably, the polarisation is qualitatively different from the one found in the Hubbard model. Paper III investigates spin polarisation in a quantum wire with a realistic external potential due to split gates and a random distribution of charged donors. At low electron densities we recover spin polarisation and a metalinsulator transition when electrons are localised to electron lakes due to ragged potential profile from the donors. In paper IV we propose a spin-filter device based on resonant backscattering of edge states against a quantum anti-dot embedded in a quantum wire. A magnetic field is applied and the spin up/spin down states are separated through Zeeman splitting. Their respective resonant states may be tuned so that the device can be used to filter either spin in a controlled way. Paper V analyses the details of low energy electron transport through a magnetic barrier in a quantum wire. At sufficiently large magnetisation of the barrier the conductance is pinched off completely. Furthermore, if the barrier is sharp we find a resonant reflection close to the pinch off point. This feature is due to interference between a propagating edge state and quasibond state inside the magnetic barrier. Paper VI adapts an efficient numerical method for computing the surface Green’s function in photonic crystals to graphene nanoribbons (GNR). The method is used to investigate magnetic barriers in GNR. In contrast to quantum wires, magnetic barriers in GNRs cannot pinch-off the lowest propagating state. The method is further applied to study edge dislocation defects for realistically sized GNRs in paper VII. In this study we conclude that even modest edge dislocations are sufficient to explain both the energy gap in narrow GNRs, and the lack of dependance on the edge structure for electronic properties in the GNRs.

No description available.

In this thesis valence changes at interfaces and surfaces of 3d and 4f systems are investigated by X-ray spectroscopy, in particular X-ray photoemission (XPS), X-ray absorption (XAS) and resonant photoemission spectroscopy (ResPES). The first part addresses the electronic properties of the oxides LaAlO3, LaGaO3 and NdGaO3 grown by pulsed laser deposition on TiO2-terminated SrTiO3 single crystals along (001)-direction. These polar/non-polar oxide interfaces share an insulator to metal phase transition as a function of overlayer thickness including the formation of an interfacial two dimensional electron gas. The nature of the charge carriers, their concentration and spatial distribution, and the band alignment near the interface are studied in a comparative manner and evaluated quantitatively. Irrespective of the different overlayer lattice constants and bandgaps, all the heterostructures behave similarly. Rising Ti3+ concentration is monitored by Ti 2p XPS, Ti L-edge XAS and by resonantly enhanced Ti 3d excitations in the vicinity of EF (ResPES) when the layer number n increases. This indicates that the active material is in all cases a near interface SrTiO3 layer of 4nm thickness. Band bending in SrTiO3 occurs but no electric field is detected inside the polar overlayers. Essential aspects of the findings are captured by scenarios where the polar forces are alleviated by surface defect creation or the separation of photon generated electron-hole pairs in addition to the electronic reconstruction at n = 4 unit cells layer thickness. Furthermore, deviations from an abrupt interface are found by soft X-ray photoemission spectroscopy which may affect the interface properties. The surface sensitivity of the measurements has been tuned by varying photon energy and emission angle. In contrast to the core levels of the other elements, the Sr 3d line shows an unexpected splitting for higher surface sensitivity, signaling the presence of a second strontium component. From a quantitative analysis it is concluded that during the growth process a small amount of Sr atoms diffuse away from the substrate and segregate at the surface of the heterostructure, possibly forming strontium oxide. In the second part of this thesis the heavy fermion superconductors CeMIn5 (M = Co, Rh, Ir) are investigated by temperature- and angle-dependent XPS. In this material class the subtle interplay between localized Ce 4f and itinerant valence electrons dominate the electronic properties. The Ce 3d core level has a very similar shape for all three materials and is indicative of weak f-hybridization. The spectra are analyzed using a simplified version of the Anderson impurity model, which yields a Ce 4f occupancy that is larger than 0.9. The temperature dependence shows a continuous, irreversible and exclusive broadening of the Ce 3d peaks, due to oxidation of Ce at the surface. / In der vorliegenden Dissertation werden Valenzänderungen an Grenzflächen und Oberflächen mittels Verfahren der Röntgenspektroskopie untersucht, zu denen die Röntgenphotoelektronen- (XPS), die Röntgenabsorptions- (XAS) und die resonante Photoelektronenspektroskopie (ResPES) gehören. Kapitel 3 behandelt die elektronischen Eigenschaften der Oxide LaAlO3, LaGaO3 und NdGaO3, welche mittels Laserdeposition (PLD) auf TiO2-terminierte SrTiO3 Einkristalle entlang (001)-Richtung gewachsen wurden. Diese polaren/nicht-polaren Oxidgrenzflächen weisen einen Isolator-Metall Phasenübergang als Funktion der Schichtdicke auf, bei dem sich ein zwei dimensionales Elektronengas an der Grenzfläche bildet. Die Eigenschaften dieser Ladungsträger, deren Konzentration und räumliche Ausdehnung, sowie der Verlauf der Energiebänder an der Grenzfläche werden vergleichend untersucht und quantitativ bestimmt. Es wird gezeigt, dass sich die drei untersuchten Grenzflächen, trotz unterschiedlicher Gitterkonstanten und Energiebandlücken, ähnlich verhalten. Das mit der Schichtdicke ansteigende Ti3+ Signal wird im Ti 2p XPS, Ti L-Kante XAS und durch die resonant verstärkten Ti 3d Anregungen nahe EF (ResPES) nachgewiesen. Daraus lässt sich schlussfolgern, dass in allen Fällen eine SrTiO3 Schicht mit einer Dicke von 4nm der eigentlich aktive Bereich ist. Im SrTiO3 tritt eine Bandverbiegung auf, ein elektrisches Feld in der polaren Deckschicht kann jedoch nicht nachgewiesen werden. Grundlegende Aspekte dieser Ergebnisse sind in einem Szenario vereinbar, bei dem die polaren Kräfte durch die Entstehung von Oberflächendefekten, durch die Trennung von photoneninduzierten Elektronen-Lochpaaren und durch eine elektronische Umordnung bei 4 uc Schichtdicke eliminiert werden. Des Weiteren werden Abweichungen von einer abrupten Grenzfläche mittels weich-Röntgenphotoelektronenspektroskopie festgestellt, die die Grenzflächeneigenschaften beeinflussen können. Für oberflächenempfindlichere Messbedingungen zeigt die Sr 3d Anregung, im Gegensatz zu Rumpfniveaus anderer Elemente, eine unerwartete Aufspaltung, was nur durch das Vorhandensein einer zweiten chemischen Strontiumkomponente zu erklären ist. Aus quantitativen Betrachtungen lässt sich schließen, dass einige Strontiumatome während des Wachstums an die Oberfläche diffundieren und möglicherweise Strontiumoxid gebildet wird. Der zweite Schwerpunkt der vorliegenden Arbeit ist die Untersuchung von Schwer-Fermionen Supraleitern CeMIn5 (M = Co, Rh, Ir) mittels temperatur- und winkelabhängiger XPS. Bei dieser Materialklasse dominiert das feine Zusammenspiel zwischen lokalisierten Ce 4f und frei beweglichen Leitungselektronen die elektronischen Eigenschaften. Das Ce 3d Rumpfniveauspektrum besitzt für die drei Materialien eine sehr ähnliche Form, die auf eine schwache f-Hybridisierung schließen lässt. Die Spektren werden mittels einer vereinfachten Version des Anderson-Impurity Modells analysiert, wobei sich eine Ce 4f Besetzung von mehr als 0,9 ergibt. Die Temperaturabhängigkeit zeigt eine kontinuierliche und irreversible Verbreiterung ausschließlich für die Ce 3d Anregung, dieser Umstand kann einer Oxidation der reaktiven Ceratome an der Oberfläche zugeordnet werden.

The electrical and thermal conductance and the Seebeck coefficient are calculated for one-dimensional systems, and their behavior as a function of temperature and chemical potential is investigated. It is shown that the conductances are proportional to an average of the transmission probability around the Fermi level with the average taken for the thermal conductance being over a wider range. This has the effect of creating less well-defined plateaus for thermal-conductance quantization experiments. For weak non-linearities, the charge and entropy currents across a quantum point contact are expanded as a series in powers of the applied bias voltage and the temperature difference. After that, the expansions of the Seebeck voltage in temperature difference and the Peltier heat in current are obtained. Also, it is shown that the linear thermal conductance of a quantum point contact displays a half-plateau structure, almost flat regions appearing around half-integer multiples of the conductance quantum. This structure is investigated for the saddle-potential model.

Orientador: Prof. Dr. Gustavo Martini Dalpian / Tese (doutorado) - Universidade Federal do ABC, Programa de Pós-Graduação em Nanociências e Materiais Avançados, 2015. / Em 2004, foi descoberto que a interface formada entre as superf'ýcies (001) do SrTiO3 e LaAlO3 apresenta um g'as de el'etrons bidimensional (2DEG), apesar de o bulk desses materiais ser isolante. Em 2011, foi reportado um 2DEG similar na superf'ýcie (001) do SrTiO3. Apesar de haver muitos trabalhos acerca desse assunto, n¿ao h'a um consenso sobre a origem do 2DEG nesses sistemas. Inclu'ýda nesse contexto, esta tese reporta os resultados de c'alculos de primeiros princ'ýpios baseados na Teoria do Funcional da Densidade (DFT) da superf'ýcie (001) dos filmes finos de SrTiO3 e LaAlO3 e da interface (001) formada entre esses dois 'oxidos. Filmes finos de LaAlO3 e SrTiO3 tendem a ter vac¿ancias com menores energias de forma¸c¿ao da superf'ýcie, e quando com vac¿ancias apresentaram comportamento condutor. Filmes finos de SrTiO3 sem defeitos demonstraram comportamento isolante. A vac¿ancia de oxig¿enio na superf'ýcie com termina¸c¿ao TiO2 'e a menos custosa energeticamente, e nesse caso 'e detectado um 2DEG da superf'ýcie do SrTiO3. O mesmo ocorre em filmes finos de LaAlO3, com vac¿ancias de oxig¿enio e termina¸c¿ao AlO2 e vac¿ancias de La e termina¸c¿ao LaO, podendo haver forma¸c¿ao espont¿anea nesses casos. Em ambos os casos, as simula¸c¿oes sugerem que 'e formado um 2DEG na superf'ýcie. As simula¸c¿oes da interface mostraram que para a hete2 roestrutura sem defeitos 'e necess'aria a deposi¸c¿ao de quatro ou mais camadas de LaAlO3 sobre o substrato de SrTiO3 para que ocorra o comportamento met'alico. Vac¿ancias de oxig¿enio se formam preferencialmente na interface quando a espessura do LaAlO3 'e de tr¿es camadas ou menos. Para quatro ou mais camadas de LaAlO3, as vac¿ancias de oxig¿enio tendem a se localizar na superf'ýcie. Para todas as simula¸c¿oes da interface com defeitos, as heteroestruturas apresentaram comportamento met'alico, por'em n¿ao foi detectado um 2DEG na interface, j'a que as cargas n¿ao se apresentaram confinadas na regi¿ao da interface. Vac¿ancias justificam o 2DEG na superf'ýcie (001) de filmes finos de LaAlO3 e SrTiO3, por'em n¿ao explicam o 2DEG na interface entre os mesmos. / In 2004 it was discovered that the interface between the (001) SrTiO3 and LaAlO3 surfaces presents a two dimensional electron gas (2DEG), although the bulk of these materials are insulators. In 2011 it was reported a similar 2DEG at (001) SrTiO3 surface. Despite many studies on this subject, there is no consensus about the origin of the 2DEG in these systems. Included in this context, this thesis reports results of first principles calculations based on Density Functional Theory (DFT) about (001) SrTiO3 and LaAlO3 thin films surfaces and the (001) interface formed between these two oxides. For LaAlO3 and SrTiO3 thin films, vacancies tend to have lower formation energies at the surface. Non-defective SrTiO3 thin films have demonstrated an insulator behavior. The oxygen vacancy at the TiO2 terminated surface is the most stable and in this case is observed a 2DEG at the SrTiO3 surface. The same occurs for LaAlO3 thin films with oxygen vacancies and for the AlO2 termination and with La vacancies with LaO termination. These vacancies may be formed spontaneously. In both cases, the simulations suggest a 2DEG at the surface. The interface simulations showed that in the non-defective heterostructure it is necessary the deposition of four or more layers of LaAlO3 over SrTiO3 substrate to occur a metallic behavior. Oxygen 4 vacancies are preferably formed at the interface when the LaAlO3 thickness is three layers or less. For four LaAlO3 layers or more, the oxygen vacancies tend to be located at the surface. For all simulations of the defective interface, the heterostructures showed metallic behavior. However it was not detected a 2DEG at the interface, owing the fact that the charges are not confined at the interface region. Vacancies can justify the 2DEG at the SrTiO3 and LaAlO3 thin films surfaces, however does not explain the 2DEG at the interface between them.

abstract: Kinetic inductance springs from the inertia of charged mobile carriers in alternating electric fields and it is fundamentally different from the magnetic inductance which is only a geometry dependent property. The magnetic inductance is proportional to the volume occupied by the electric and magnetic fields and is often limited by the number of turns of the coil. Kinetic inductance on the other hand is inversely proportional to the density of electrons or holes that exert inertia, the unit mass of the charge carriers and the momentum relaxation time of these charge carriers, all of which can be varied merely by modifying the material properties. Highly sensitive and broadband signal amplifiers often broaden the field of study in astrophysics. Quantum-noise limited travelling wave kinetic inductance parametric amplifiers offer a noise figure of around 0.5 K ± 0.3 K as compared to 20 K in HEMT signal amplifiers and can be designed to operate to cover the entire W-band (75 GHz – 115 GHz).The research cumulating to this thesis involves applying and exploiting kinetic inductance properties in designing a W-band orthogonal mode transducer, quadratic gain phase shifter with a gain of ~49 dB over a meter of microstrip transmission line. The phase shifter will help in measuring the maximum amount of phase shift ∆ϕ_max (I) that can be obtained from half a meter transmission line which helps in predicting the gain of a travelling wave parametric amplifier. In another project, a microstrip to slot line transition is designed and optimized to operate at 150 GHz and 220 GHz frequencies, that is used as a part of horn antenna coupled microwave kinetic inductance detector proposed to operate from 138 GHz to 250 GHz. In the final project, kinetic inductance in a 2D electron gas (2DEG) is explored by design, simulation, fabrication and experimentation. A transmission line model of a 2DEG proposed by Burke (1999), is simulated and verified experimentally by fabricating a capacitvely coupled 2DEG mesa structure. Low temperature experiments were done at 77 K and 10 K with photo-doping the 2DEG. A circuit model of a 2DEG coupled co-planar waveguide model is also proposed and simulated. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2016

Advent of ultrashort lasers made it possible to probe various scattering phenomena in materials that occur in a time scale on the order of few femtoseconds to several tens of picoseconds. Nonlinear optical spectroscopy techniques, such as pump-probe, transient four wave mixing (TFWM), etc., are very common to study the carrier dynamics in various material systems. In time domain, the transient FWM uses several ultrashort pulses separated by time delays to obtain the information of dephasing and population relaxation times, which are very important parameters that govern the carrier dynamics of materials. A recently developed multidimensional nonlinear optical spectroscopy is an enhanced version of TFWM which keeps track of two time delays simultaneously and correlate them in the frequency domain with the aid of Fourier transform in a two dimensional map. Using this technique, the nonlinear complex signal field is characterized both in amplitude and phase. Furthermore, this technique allows us to identify the coupling between resonances which are rather difficult to interpret from time domain measurements. This work focuses on the study of the coherent response of a two dimensional electron gas formed in a modulation doped GaAs/AlGaAs quantum well both at zero and at high magnetic fields. In modulation doped quantum wells, the excitons are formed as a result of the inter- actions of the charged holes with the electrons at the Fermi edge in the conduction band, leading to the formation of Mahan excitons, which is also referred to as Fermi edge singularity (FES). Polarization and temperature dependent rephasing 2DFT spectra in combination with TI-FWM measurements, provides insight into the dephasing mechanism of the heavy hole (HH) Mahan exciton. In addition to that strong quantum coherence between the HH and LH Mahan excitons is observed, which is rather surprising at this high doping concentration. The binding energy of Mahan excitons is expected to be greatly reduced and any quantum coherence be destroyed as a result of the screening and electron-electron interactions. Such correlations are revealed by the dominating cross-diagonal peaks in both one-quantum and two-quantum 2DFT spectra. Theoretical simulations based on the optical Bloch Equations (OBE) where many-body effects are included phenomenologically, corroborate the experimental results. Time-dependent density functional theory (TD-DFT) calculations provide insight into the underlying physics and attribute the observed strong quantum coherence to a significantly reduced screening length and collective excitations of the many-electron system. Furthermore, in semiconductors under the application of magnetic field, the energy states in conduction and valence bands become quantized and Landau levels are formed. We observe optical excitation originating from different Landau levels in the absorption spectra in an undoped and a modulation doped quantum wells. 2DFT measurements in magnetic field up to 25 Tesla have been performed and the spectra reveal distinct difference in the line shapes in the two samples. In addition, strong coherent coupling between landau levels is observed in the undoped sample. In order to gain deeper understanding of the observations, the experimental results are further supported with TD-DFT calculation.

No description available.