Ce manuscrit est basé sur l'étude de l'interaction entre des purs courants de spin et parois de domaines magnétiques. Cet étude a été divisée en quatre parties. Dans la première partie, nous avons donné une explication détaillée du transport de spin dans des nano structure métalliques en utilisant trois approches différentes. La deuxième partie est focalisée sur l'utilisation d'un pur courant de spin pour induire le mouvement d'un paroi de domaine. Dans la troisième et quatrième partie nous avons mis en évidence deux nouvelle techniques d'injection et détection de spin en utilisant des parois des domaines magnétiques. / This thesis is based on the study of the interplay between pure spin currents and magnetic domains walls. This study has been divided in four chapters. In the first part, we provides a detailed explanation of the spin-transport in metallic structures by using three approaches. The second chapter concerns to the use of pure spin currents to induce DW motion in lateral spin valves. The third and four chapter, is mainly focused on the use of DWs for the efficient injection and detection of pure spin currents in lateral spin valves and cross shaped geometries.

Submitted by Fernando Augusto Dessotti null (fernandodessoti@hotmail.com) on 2018-01-30T17:37:28Z No. of bitstreams: 1 Tese oficial.pdf: 12552592 bytes, checksum: e44289b205ab39ad49d51a2f976df63c (MD5) / Approved for entry into archive by Cristina Alexandra de Godoy null (cristina@adm.feis.unesp.br) on 2018-01-30T18:39:52Z (GMT) No. of bitstreams: 1 dessotti_fa_dr_ilha.pdf: 12552592 bytes, checksum: e44289b205ab39ad49d51a2f976df63c (MD5) / Made available in DSpace on 2018-01-30T18:39:52Z (GMT). No. of bitstreams: 1 dessotti_fa_dr_ilha.pdf: 12552592 bytes, checksum: e44289b205ab39ad49d51a2f976df63c (MD5) Previous issue date: 2017-12-12 / Coordenação de Aperfeiçoamento de Pessoal de Nível Superior (CAPES) / O físico italiano Ettore Majorana propôs, no campo da Física de altas energias, a existência de férmions peculiares que têm como característica serem suas próprias antipartículas. No contexto de Física da matéria condensada, tais férmions emergem como quasipartículas de Majorana (MQPs). Da perspectiva da compu- tação quântica, duas MQPs podem compor um férmion regular e atuar como um qubit protegido, que está desacoplado do ambiente e livre do efeito de decoerência. Até onde sabemos, a verificação experimental de uma MQP ainda é questionável, apesar de alguns resultados experimentais, e desta forma, o objetivo desta tese é de propor formas experimentais a fim de ajudar na busca das assinaturas de tais excitações. Como o efeito Fano é um efeito de interferência na qual canais de tunelamento competem entre si pelo transporte eletrônico, ele torna-se uma forma de capturar tais assinaturas das MQPs em sistemas de matéria condensada. Baseado nisto, a ideia é investigar teoricamente três diferentes interferômetros a fim de obter uma assinatura definitiva das MQPs. O primeiro é um interferômetro do tipo Aharanov-Bohm composto por dois quantum dots, sendo um deles acoplado a uma MQP, que se localiza na borda de um fio de Kitaev semi-infinito na fase topológica. Ajustando o nível de Fermi dos terminais e o detuning simétrico dos níveis dos dots, mostrou-se que regimes Fano opostos resultam em uma transmitância caracterizada por distintas regiões condutoras e isolantes, que são marcas de uma MQP isolada. O dispositivo proposto aqui constitui uma alternativa experimental para detectar as MQPs. O segundo interferômetro é composto por pontas de STM e AFM próximas a um dímero de Kitaev de átomos adsorvidos supercondutores, na qual o átomo adsorvido localizado abaixo da ponta de AFM, encerra um par de MQPs. Para uma energia de ligação ∆ do par de Cooper delocalizado nos átomos adsorvidos abaixo das pontas coincidente com a amplitude de tunelamento t entre eles, ou seja, ∆ = t, mostrou-se que somente uma MQP abaixo da ponta de AFM hibridiza com o átomo adsorvido abaixo das pontas de STM, e para esta situação, o padrão de Fano permanece como universal. Mas para o caso das duas MQPs conectadas ao átomo adsorvido abaixo das pontas de STM, foi verificado que tal característica universal foi quebrada. O terceiro e último interferômetro é composto por dois quantum dots assimetricamente acoplados a MQPs isoladas que se localizam em duas cadeias de Kitaev na fase topológica. Este dispositivo habilita a medição da MQP em uma forma distinta do pico zero-bias. Mais importante, o sistema se comporta como um seletor de correntes composto por dois caminhos distintos: (i) para o dot superior conectado a ambas as cadeias, o dispositivo percebe ambas as MQPs como um férmion regular e a corrente atravessa somente o dot inferior, pois a corrente no dot superior é impedida devido a presença de um gap supercondutor; e (ii) pela leve supressão da hibridização do dot superior com a cadeia, a corrente é abruptamente trocada para fluir através deste mesmo dot, uma vez que um elétron é armadilhado como um estado ligado ao contínuo (BIC) surge no dot inferior. Tal seletor de corrente entre os dots inferior e superior caracteriza uma transição de fase quântica, que possibilita não somente a revelação de MQPs, mas também produz um seletor de corrente assistido por elas. / The Italian physicist Ettore Majorana proposed in the field of high-energy Physics the existence of peculiar fermions that constitute their own antiparticles. In the context of condensed matter Physics, these fermions are Majorana quasiparticles (MQPs). From the quantum computing perspective, two MQPs can compose a regular fermion acting as a protected qubit, which is indeed decoupled from the host environment and free of the decoherence effect. To the best of our knowledge, the experimental capture of a MQP up to now is still questionable despite some experimental results, then, the goal of this thesis is to propose helpful experiment manners in revealing signatures from such excitations. As the Fano effect is an interference phenomenon where tunneling paths compete for the electronic transport, it becomes a probe to catch fingerprints of MQPs lying on condensed matter systems. Based on this, the idea is to investigate theoretically three different interferometers in order to obtain a MQP smoking- gun signature. The first one was an Aharonov-Bohm-like interferometer composed by two quantum dots, being one of them coupled to a MQP, which is attached to one of the edges of a semi-infinite Kitaev wire within the topological phase. By changing the Fermi energy of the leads and the symmetric detuning of the levels for the dots, we show that opposing Fano regimes result in a transmittance characterized by distinct conducting and insulating regions, which are fingerprints of an isolated MQP. The setup proposed here constitutes an alternative experimental tool to detect MQPs. The second one is composed by STM and AFM tips close to a Kitaev dimer of superconducting adatoms, in which the adatom placed under the AFM tip, encloses a pair of MQPs. For the binding energy ∆ of the Cooper pair delocalized into the adatoms under the tips coincident with the tunneling amplitude t between them, namely ∆ = t, we find that only one MQP beneath the AFM tip hybridizes with the adatom coupled to the STM tips, and for this situation, the Fano pattern is still universal. But for the case of two MQPs connected to the adatom beneath the STM tips, we verify that such a universality is broken. The third and last one is composed by two quantum dots asymmetrically coupled to isolated MQPs, lying on the edges of two topological Kitaev chains. This setup enables us to probe MQPs in a quite distinct way from the zero-bias peak feature. Most importantly, the system behaves as a current switch made by two distinct paths: (i) for the upper dot connected to both chains, the device perceives both MQPs as an ordinary fermion and the current crosses solely the lower dot, since current in the upper dot is prevented due to the presence of the superconducting gap; and (ii) by suppressing slightly the hybridization of the upper dot with one chain, the current is abruptly switched to flow through this dot, once a trapped electron as a bound state in the continuum (BIC) appears in the lower dot. Such a current switch between upper and lower dots characterizes a quantum phase transition, which enables not only the fundamental revealing of MQPs, but also yields a current switch assisted by them.

Junções túnel com eletrodos ferromagnéticos (Py/AlOx/Co) foram produzidas usando a técnica de desbastamento iônico e depositadas sobre condições de oxidação que garantem baixa altura da barreira de potencial, baixa assimetria da barreira, forte dependência da magnetorresistência túnel com a tensão aplicada e o tunelamento quântico como mecanismo de transporte eletrônico. As amostras foram produzidas com o objetivo de corroborar um modelo recentemente publicado e que prevê inversão da magnetorresistência túnel com a tensão aplicada devido à baixa altura do potencial da barreira. As medidas de magneto-transporte eletrônico (resistência de tunelamento em função do campo magnético aplicado) mostram uma inversão da magnetorresistência túnel com a tensão aplicada para temperatura constante de 77 K. O sistema (Py/AlOx/Co) é bem conhecido por apresentar magnetorresistência positiva onde a altura da barreira de potencial é geralmente igual ou maior a 2,0 eV (Moodera et al. 1995 e Boeve et al. 2000). Esta inversão não foi anteriormente reportada e se deve preferencialmente à baixa altura do potencial da barreira e à forte dependência com a tensão aplicada. A explicação física para a inversão é baseada no fator de coerência quântica, D(Ex , V), como previsto por Li et al. (2004a,b) e Ren et al. (2005) para a região de tensão intermediária. Ajustes às curvas I-V, medidas a temperatura ambiente, com os modelos de Simmons (1963b,c), Simmons (1964) e Chow (1965) mostram valores menores que os reportados anteriormente para a altura do potencial da barreira (≈ 1,0 eV) e barreiras com baixa assimetria (≈ 0,2 eV). Também, as curvas I-V para temperatura ambiente e baixa temperatura, as curvas I-T para tensão constante e o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira mostram que o tunelamento quântico é um mecanismo de transporte eletrônico. Este resultado sugere a possibilidade de constatar o aparecimento de áreas efetivas de tunelamento e indicando a presença de uma distribuição não uniforme da corrente de tunelamento. O efeito combinado da baixa altura da barreira de potencial, da baixa assimetria da barreira, da forte dependência da magnetorresistência túnel com a tensão aplicada e do tunelamento quântico como mecanismo de transporte eletrônico possibilitaram não somente a inversão da magnetorresistência túnel com a tensão aplicada, mas também o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira. / Tunneling junctions with ferromagnetic electrodes (Py/AlOx/Co) were produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism. The samples were deposited to verify a recently published model which predicts tunneling magnetoresistance inversion with applied bias due to low enough potential barrier height. Electronic transport measurements (tunneling resistance as a function of the applied magnetic field) show inverse (negative) tunneling magnetoresistance with applied bias at 77 K. Tunneling junctions of (Py/AlOx/Co) are well known positive magnetoresistance system where the potential barrier height is usually equal or higher than 2.0 eV (Moodera et al., 1995 e Boeve et al., 2000). This inverted tunneling magnetoresistance behavior has not been reported before and is due mainly to the low potential barrier height and the strong bias dependence The physical explanation for the inversion is based on the quantum coherence factor, D(Ex , V), following the Li et al. (2004ab) and Ren et al. (2005) model for intermediate voltage range. Room temperature I-V curves fitted with both Simmons’ (1963b,c), Simmons’ (1964) and Chow’s (1965) models showed potential barrier height values (≈ 1.0 eV), lower than those previously reported, and low asymmetry of the barrier (≈ 0.2 eV). Also, I-V curves for room and low temperature, I-T curves for constant applied bias and the exponential growth of the tunneling resistance as a function of the effective barrier thickness showed quantum tunneling as the charge transport mechanism. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution. The combined effect of low potential barrier height, low barrier asymmetry, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism allowed not only the tunneling magnetoresistance inversion with applied bias but also, the exponential growth of the tunneling resistance as a function of the effective barrier thickness.

O principal objetivo dessa dissertação de mestrado é o estudo das propriedades estruturais e eletrônicas de umdosmateriaismais promissores para a nanoeletrônica, os nanotubos de carbono, na presença de defeitos do tipo vacâncias. Os defeitos estudados neste trabalho são as monovacâncias e multivacâncias em nanotubos de carbono armchair (5, 5). Para isso, realizamos cálculos quânticos de primeiros princípios baseados na teoria do funcional da densidade. Primeiramente, foi realizado um estudo sistemático das monovacâncias variando a sua concentração, para que possamos entender qual é a influência da distância entre esses defeitos no sistema. A partir de 14.784Å o efeito do potencial inserido pela vacância praticamente é desprezível. Seguindo essa sistemática, observamos também que a partir de 19.712Å a interação elástica entre defeitos é desprezível. Em todas as estruturas de bandas ocorre o surgimento de bandas de impureza, caracterizadas por uma localização de carga no defeito, principalmente no \"dangling bond\". Utilizando o procedimento NEB (nudge elastic band) obtivemos um valor de 0.55eV para a barreira de migração da vacância. Esse valor fornece um tempo aproximado de 0.156ms a 300K, para que a vacância salte de um sítio para outro na rede do nanotubo. Tendo isso, determinamos que a monovacância é um defeito que apresenta uma grande mobilidade no sistema, o que pode eventualmente ocorrer de uma encontrar-se com outras, formando sistemas maiores, como clusters de monovacâncias ou multivacâncias. Seguindo o nosso objetivo, realizamos um estudo sistemático das multivacâncias. Determinamos todas as reconstruções desses defeitos, nas quais observamos que as multivacâncias de índice par, apresentavam somente pentágonos e uma região central, e em contrapartida as de índice ímpar apresentavam pentágonos, uma região central e um dangling bond na sua estrutura final. Definidas as estruturas e as energias das multivacâncias, calculamos suas propriedades eletrônicas, onde é notório que a influência desses defeitos é muito mais drástica que as monovacâncias, devido a sua grande extensão no sistema. Realizamos cálculos de transporte eletrônico para todos os sistemas, utilizando o método de funções de Green fora do equilíbrio (NEGF-DFT), desenvolvido no nosso grupo. A partir desses cálculos, observamos que todos os defeitos modificam a estrutura eletrônica do sistema, uns mais outros menos, mas até para as multivacâncias maiores como a hexavacância, o sistema mantém o seu caráter metálico. Através das técnicas de funções de Green, mostramos que quando estamos utilizando condições periódicas de contorno há uma surgimento de minigap\'s espúrios. Estes não aparecem quando o vínculo de simetria translacional é quebrado via técnicas de funções de Green. / The main purpose of this dissertation is the study of the electronic and structural properties in the presence of different types of vacancies, in one of the most promising materials for nanoelectronics, carbon nanotubes. The defects studied in this work are monovacancy and multivacancies in (5, 5) armchair carbon nanotubes. For that purpose perform quantum ab initio calculations based on density functional theory (DFT). Firstly, was made a systematic study of monovacancies varying its concentration, so we can understand what is the influence of the distance between these defects in the system. Undergoes reconstruction pentagon nonagon from14.784Å on words the effect of the potential created by the vacancy is practically negligible. Following this systematic approach, we also found that from 19.712Å the structural interaction between the defects tends to zero. In all band structures one observes impurity bands, characterized by charge localization in the defect, mainly in the dangling bond. Using the NEB (nudge elastic band) procedure we obtained a value of 0.55eV for the migration barrier of the monovacancy. This value provides an approximate time of 0.156ms at 300K for the vacancy to jump from one site to another on the nanotube network. Hence, we determined that the monovacancy presents a great mobility in the system, which may possibly inccur in two ore more vacancies merging with others to form a larger defect, such as clusters of monovacancies or a hole multivacancy. Following our goal, we conducted a systematic study of multivacancies. We determined all reconstructions of these defects. We observed that multivacancies with and even number of carbon atoms removed had only pentagons and a central region. In contrast the CNT with and odd numbers of carbon atoms removed have pentagons, a central region and a dangling bond in its final structure. Once we have defined the structures and the energies of the multivacancies, we calculated their electronic properties. It is clear that the influence of these defects is much more drastic than the monovacancy, due to the size of the defect in the system. We calculated the electronic transport for all systems, using a non-equilibrium Green\'s functions method (NEGF-DFT), developed in our group. From these calculations, we observed that all the defects alter the electronic structure of the system, but even for the largest multivacancy, the system maintains its metallic character. Using the Green\'s functions techniques, we show that the use of periodic boundary conditions leads to the emergence of spurious mini-gap\'s. These do not appear when the translational symmetry is broken using Green\'s function approach and a true open system is considered.

Junções túnel com eletrodos ferromagnéticos (Py/AlOx/Co) foram produzidas usando a técnica de desbastamento iônico e depositadas sobre condições de oxidação que garantem baixa altura da barreira de potencial, baixa assimetria da barreira, forte dependência da magnetorresistência túnel com a tensão aplicada e o tunelamento quântico como mecanismo de transporte eletrônico. As amostras foram produzidas com o objetivo de corroborar um modelo recentemente publicado e que prevê inversão da magnetorresistência túnel com a tensão aplicada devido à baixa altura do potencial da barreira. As medidas de magneto-transporte eletrônico (resistência de tunelamento em função do campo magnético aplicado) mostram uma inversão da magnetorresistência túnel com a tensão aplicada para temperatura constante de 77 K. O sistema (Py/AlOx/Co) é bem conhecido por apresentar magnetorresistência positiva onde a altura da barreira de potencial é geralmente igual ou maior a 2,0 eV (Moodera et al. 1995 e Boeve et al. 2000). Esta inversão não foi anteriormente reportada e se deve preferencialmente à baixa altura do potencial da barreira e à forte dependência com a tensão aplicada. A explicação física para a inversão é baseada no fator de coerência quântica, D(Ex , V), como previsto por Li et al. (2004a,b) e Ren et al. (2005) para a região de tensão intermediária. Ajustes às curvas I-V, medidas a temperatura ambiente, com os modelos de Simmons (1963b,c), Simmons (1964) e Chow (1965) mostram valores menores que os reportados anteriormente para a altura do potencial da barreira (≈ 1,0 eV) e barreiras com baixa assimetria (≈ 0,2 eV). Também, as curvas I-V para temperatura ambiente e baixa temperatura, as curvas I-T para tensão constante e o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira mostram que o tunelamento quântico é um mecanismo de transporte eletrônico. Este resultado sugere a possibilidade de constatar o aparecimento de áreas efetivas de tunelamento e indicando a presença de uma distribuição não uniforme da corrente de tunelamento. O efeito combinado da baixa altura da barreira de potencial, da baixa assimetria da barreira, da forte dependência da magnetorresistência túnel com a tensão aplicada e do tunelamento quântico como mecanismo de transporte eletrônico possibilitaram não somente a inversão da magnetorresistência túnel com a tensão aplicada, mas também o crescimento exponencial da resistência de tunelamento em função da espessura efetiva da barreira. / Tunneling junctions with ferromagnetic electrodes (Py/AlOx/Co) were produced by magnetron sputtering technique and deposited under oxidation conditions that lead to low potential barrier height, low asymmetrical barrier, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism. The samples were deposited to verify a recently published model which predicts tunneling magnetoresistance inversion with applied bias due to low enough potential barrier height. Electronic transport measurements (tunneling resistance as a function of the applied magnetic field) show inverse (negative) tunneling magnetoresistance with applied bias at 77 K. Tunneling junctions of (Py/AlOx/Co) are well known positive magnetoresistance system where the potential barrier height is usually equal or higher than 2.0 eV (Moodera et al., 1995 e Boeve et al., 2000). This inverted tunneling magnetoresistance behavior has not been reported before and is due mainly to the low potential barrier height and the strong bias dependence The physical explanation for the inversion is based on the quantum coherence factor, D(Ex , V), following the Li et al. (2004ab) and Ren et al. (2005) model for intermediate voltage range. Room temperature I-V curves fitted with both Simmons’ (1963b,c), Simmons’ (1964) and Chow’s (1965) models showed potential barrier height values (≈ 1.0 eV), lower than those previously reported, and low asymmetry of the barrier (≈ 0.2 eV). Also, I-V curves for room and low temperature, I-T curves for constant applied bias and the exponential growth of the tunneling resistance as a function of the effective barrier thickness showed quantum tunneling as the charge transport mechanism. This result suggests the presence of effective tunneling areas or hot spots, leading to a non-uniform current distribution. The combined effect of low potential barrier height, low barrier asymmetry, strong tunneling magnetoresistance dependence with applied bias and quantum tunneling as the charge transport mechanism allowed not only the tunneling magnetoresistance inversion with applied bias but also, the exponential growth of the tunneling resistance as a function of the effective barrier thickness.

No description available.

Metals with excitonic instabilities are multiband systems with significant electron-electron interaction. The electronic transport in such systems is affected by collective fluctuations of the electrons, leading to anomalous features in the measured transport coefficients. Many of these anomalies have not been well understood because the transport mechanisms in these systems tend to be rather complex. The complexity arises, on the one hand, from the multiband nature and, on the other, from the anisotropic scattering of electrons accompanied by emitting or absorbing collective fluctuations. Previous works considering scattering due to collective fluctuations have mainly focused on single-band systems, for example in the context of the normal-state transport in cuprates. The recent discovery of high-temperature superconductivity in iron pnictides has renewed the interest in multiband systems. Exploring the transport mechanisms in multiband systems, I find some interesting new aspects, which do not occur in single-band systems. In particular, anisotropic scattering in a model with electronlike and holelike Fermi surfaces can lead to a negative conductivity contribution of the minority carriers, i.e., in an electric field, the minority carriers drift in the direction opposite of what one would expect based on their charge. I show that this effect can explain a reduced magnetoresistance in connection with an enhanced Hall coefficient, which has been measured in pnictides. Of particular interest are multiband models with hot spots on the Fermi surface, in part because of their relevance for the iron pnictides. Hot spots are states with enhanced scattering and therefore reduced excitation lifetimes. In single-band systems, the hot spots are found to have a much lower contribution to the total conductivity than other parts of the Fermi surface, which leads to the so-called hot-spot structure. I show that in the multiband case, the conductivity contributions are much more isotropic around the Fermi surface so that hot spots contribute to transport with a similar strength as other parts of the Fermi surface. I discuss this effect on the basis of an approximate analytical solution of the transport problem and numerically calculate the temperature dependence of several transport coefficients. It turns out that in the nematic phase of iron pnictides, the unexpectedly strong conductivity contribution of hot spots can explain the puzzling behavior of the resistive anisotropy. I show that the experimental observations can be explained within a scenario in which the anisotropy is mainly due to the broken symmetry of the spin-fluctuation spectrum in the nematic phase. In the spin-density-wave state, strongly anisotropic scattering can arise due to the propagating magnons. Using a two-band model relevant for iron pnictides, I find that this scattering can lead to an unusual interruption of the orbital motion of electrons in the magnetic field. As a consequence, the low-field magnetoresistance is linear with an alternating sign of the slope as a function of the direction of the current. In strong magnetic fields, the interrupted orbital motion makes the system unstable, which is characterized by a drop of the resistivity to zero.

The work in this licentiate is devoted to investigating the epitaxial growth of thin Fe layers on MgAl2O4 (001) and MgO (001) substrates using dc magnetron sputtering. The aim is to qualitatively and quantitatively determine the crystal quality of the grown Fe layers depending on their thickness, substrate material, and selected deposition parameters. The effect of the crystal quality on the magnetic and electronic transport properties is discussed. The structural characterization of the epitaxial Fe thin films is carried out by x-ray reflectometry and diffraction as well as transmission electron microscopy. X-ray scattering measurements and analysis with related models allow for a quantitative determination of layering, crystal quality, and strain profiles in the growing Fe. Magnetic properties are determined using a combination of longitudinal magneto-optical Kerr effect measurements, Kerr microscopy, and scanning electron microscopy with polarization analyser. Electronic transport properties are characterized by four-point probe measurements of the thin films. The epitaxial growth of Fe is found to be highly substrate dependent: Fe layers grown on MgAl2O4 have a significantly higher crystal quality, as compared to Fe grown on MgO. The difference in crystal quality is attributed to different strain states in Fe, which is supported by theoretical calculations of the critical thickness on both substrates. Moreover, an anomalous elastic response in Fe at the thin film limit is found. The magnetic properties of Fe are weakly reflecting the differences in crystal quality of the Fe layers. However, the difference in crystal quality affects the electronic transport properties. The results of this study on epitaxial Fe layers can provide insights into strain and defect engineering in Fe thin films, which can additionally serve as model systems for finite size effects.

No description available.

This thesis describes the conductivity fluctuations or noise measurements in graphenebased field effect transistors. The main motivation was to study the effect of disorder on the electronic transport in graphene. In chapter 4, we report the noise measurements in graphene field effect (GraFET) transistors with varying layer numbers. We found that the density dependence of noise behaves oppositely for single and multilayer graphene. An analytical model has been proposed to understand the microscopic mechanism of noise in GraFETs, which reveals that noise is intimately connected to the band structure of graphene. Our results outline a simple portable method to separate the single layer devices from multi layered ones. Chapter 5 discusses the noise measurements in two systems with a bandgap: biased bilayer graphene and graphene nanoribbon. We show that noise is sensitive to the presence of a bandgap and becomes minimum when the bandgap is zero. At low temperature, mesoscopic graphene devices exhibit universal conductance fluctuations (UCF) arising due to quantum interference effect. In chapter 6, we have studied UCF in single layer graphene and show that it can be sensitive to the presence of various physical symmetries. We report that time reversal symmetry exists in graphene at low temperature and, for the first time, we observed enhanced UCF at lower carrier density where the scattering is dominated by the long-range Coulomb scattering. Chapter 7 presents the transport and noise measurements in single layer graphene in the quantum Hall regime. At ultra-low temperature several broken symmetry states appear in the lowest Landau level, which originate possibly due to strong electron-electron interactions. Our preliminary noise measurements in the quantum Hall regime reveal that the noise is sensitive to the bulk to edge transport and can be a powerful tool to investigate these new quantum states.