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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
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Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 11 to 20 of 746 (0.027 seconds)Spelling suggestions: "subject:"epitaxy."" "subject:"apitaxy.""
| 11 |
An experimental and theoretical study of InGaP-GaAs double heterojunction bipolar transistorsLee, Tae-Woo January 1992 (has links)
No description available.
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| 12 |
STM studies of GaAs homoepitaxy on low index surface orientationsHolmes, Darran Mark January 1998 (has links)
No description available.
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| 13 |
A TEM investigation of atomic ordering in AlGaInP epilayers grown on GaAs (001) by gas-source MBEMeenakarn, Chanchana January 1999 (has links)
No description available.
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| 14 |
High pressure magnetotransport studies of InAs/GaSb heterostructuresDaly, Matthew Stuart January 1996 (has links)
No description available.
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| 15 |
Study of epitaxial thin films of YBa2Cu3O7-[delta] on silicon with different buffer layersFu, Engang. January 2005 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2006. / Title proper from title frame. Also available in printed format.
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| 16 |
Polytype formation in sublimation epitaxy of SiC on low off-axis substrates.Lundqvist, Björn January 2011 (has links)
Sublimation epitaxy of SiC on low off-axis substrates was performed. The growth was performed at different temperatures, mainly under vacuum conditions or with an initial atmosphere of N2 at 0.5 mbar (RT). Some additional experiments under different conditions (Ar background, higher temperature, higher off-axis substrate) were performed in order to further investigate growth influencing factors. The samples were characterized by optical microscopy and atomic force microscopy. A dependence of 3C/6H growth on substrate off-axis, as well as on temperature, was clear to be seen. Favored growth of 6H in the presence of N2 was found. An enlargement effect on the 3C domains grown in N2 ambient was observed. Additionally a correlation between step bunching and growth rate was found in step flow growth on low off-axis substrates. Suggestions for relevant growth mechanisms are made. Further work is discussed.
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| 17 |
Process modeling of InAs/AISb materials for high electron mobility transisitors grown by molecular beam epitaxyTriplett, Gregory Edward, Jr. 01 1900 (has links)
No description available.
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| 18 |
Fabrication of superconducting YBa2Cu3Oy thin film on YSZ substrates with or without a Eu2CuO4 buffer layerYau, Chi-yat, Ben. January 2000 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 71-79).
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| 19 |
Multi-scale simulations of thin-film metal epitaxial growth /Borovikov, Valery. January 2008 (has links)
Dissertation (Ph.D.)--University of Toledo, 2008. / Typescript. "Submitted as partial fulfillment of the requirements for the Doctor of Philosophy Degree in Physics." Bibliography: leaves 137-143.
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| 20 |
GaAs-based apertured vertical-cavity surface-emitting lasers and microcavity light emitting diodesChen, Hao, Deppe, Dennis G., January 2003 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2003. / Supervisor: Dennis G. Deppe. Vita. Includes bibliographical references. Available also from UMI Company.
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