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<p>III-Nitride materials have recently become a promising candidate for superior applications over the current technologies. However, certain issues such as lack of native substrates, and high defect density have to be overcome for further development of III-Nitride technology. This work presents research on lattice engineering of III-Nitride materials, and the structural, optical, and electrical properties of its alloys, in order to approach the ideal material for various applications. We demonstrated the non-destructive and quantitative characterization of composition modulated nanostructure in InAlN thin films with X-ray diffraction. We found the development of the nanostructure depends on growth temperature, and the composition modulation has impacts on carrier recombination dynamics. We also showed that the controlled relaxation of a very thin AlN buffer (20 ~ 30 nm) or a graded composition InGaN buffer can significantly reduce the defect density of a subsequent epitaxial layer. Finally, we synthesized an InAlGaN thin films and a multi-quantum-well structure. Significant emission enhancement in the UVB range (280 – 320 nm) was observed compared to AlGaN thin films. The nature of the enhancement was investigated experimentally and numerically, suggesting carrier confinement in the In localization centers.</p> / Dissertation

L'objectif de ce travail était de comprendre les mécanismes menant à la formation de SiC-3C sur substrats de SiC hexagonaux lors de la croissance par mécanisme Vapeur-Liquide-Solide (VLS) à partir d'une phase liquide Si-Ge. Notre étude s'est concentrée sur les premiers instants de l'interaction liquide/SiC, c'est-a-dire sans ajout de phase gazeuse réactive (propane). Nous avons montré qu'il se formait très rapidement des îlots de SiC-3C à la surface des germes. L'étude en fonction de divers paramètres (température et durée de plateau, vitesse de chauffage, nature du germe) a permis de mettre en évidence l'influence prononcée du creuset en graphite dans lequel est confinée la réaction. Les observations expérimentales associées à des calculs thermodynamiques ont permis de montrer que l'étape prépondérante, pour la formation du 3C, est sans doute la réaction transitoire entre un liquide très riche en germanium et le germe de SiC. Des considérations d'ordre cinétiques sont cependant à prendre en compte pour expliquer le caractère hors équilibre de la réaction / The aim of this work was to understand the mechanisms that lead to the 3C-SiC formation on hexagonal SiC substrates during the Vapor-Liquid-Solid (VLS) growth from a Si-Ge liquid phase. Our study focused on the early stages of the liquid/SiC interaction, i.e. without reactive gaseous phase (propane) addition. We have shown that 3C-SiC islands were very rapidly formed upon seeds surface. The study of several parameters (such as temperature and duration of the plateau, heating rate, nature of the seed) evidenced the huge influence of the graphite crucible that contains the reaction. Experimental observations combined with thermodynamic calculations show that the most important step for the 3C formation, is the transient reaction between a germanium very rich liquid and the SiC seed. Kinetic effects have to be taken into account to explain the out-of-equilibrium nature of the reaction.

This dissertation includes two parts. In the first part the study is focused on the fabrication of multifunctional thin films for photovoltaic applications. There is no doubt about the importance of transforming world reliance from traditional energy resources, mainly fossil fuel, into renewable energies. Photovoltaic section still owns very small portion of the production, despite its fast growth and vast research investments. New methods and concepts are proposed in order to improve the efficiency of traditional solar cells or introduce new platforms. Recently, ferroelectric photovoltaics have gained interest among researchers. First objective in application of ferroelectric material is to utilize its large electric field as a replacement for or improvement of built-in electric field in semiconductor p-n junctions which is responsible for the separation of generated electron-hole pairs. Increase in built in electric field will increase open-circuit voltage of the solar cell. In this regard, thin films of ferroelectric hafnium dioxide doped with silicon have been fabricated using physical vapor deposition techniques. Scanning probe microscopy techniques (PFM and KPFM) have been employed to analyze ferroelectric response and surface potential of the sample. The effects of poling direction of the ferroelectric film on the surface potential and current-voltage characteristics of the cell have been investigated. The results showed that the direction of poling affects photoresponse of the cell and based on the direction it can either improved or diminished. In the second part of this work, epitaxial thin films have been synthesized with physical vapor deposition techniques such as sputtering and electron beam evaporation for the ultimate goal of producing multifunctional three-dimensional structures. Three-dimensional structures have been used for applications such as magnetic sensors, filters, micro-robots and can be used for modification of the surface of solar cells in order to improve light absorption and efficiency. One of the important techniques for producing 3-D structures is using origami techniques. The effectiveness of this technique depends on the control of parameters which define direction of bending and rolling of the film or curvature of the structure based on the residual stress in the structure after film’s release and on the quality and uniformity of the film. In epitaxially grown films, the magnitude and direction of the stress are optimized, so the control over direction of rolling or bending of the film can be controlled more accurately. For this purpose, deposition conditions for epitaxy of Zn, Fe, Ru, Ti, NaCl and Cr on Si, Al2O3 or MgO substrates have been investigated and optimized. Crystallinity, composition and morphology of the films were characterized using reflective high energy diffraction (RHEED), Auger electron spectroscopy (AES), energy dispersive X-ray (EDX), and scanning electron microscopy (SEM).