Thesis (Ph. D.)--Lehigh University, 2004. / Includes vita. Includes bibliographical references (leaves 148-154).

Thesis (M.S.)--Materials Science and Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Tummala Rao; Committee Member: Pulugurtha Raj; Committee Member: Wong C P. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (Ph. D.)--Virginia Polytechnic Institute and State University, 1992. / Vita. Abstract. Includes bibliographical references (leaves 220-225). Also available via the Internet.

Thesis (M.S. in mechanical engineering)--Washington State University, December 2005. / Includes bibliographical references (p. 32-33).

Orientador: Eudes Borges de Araújo / Banca: João Carlos Silos Moraes / Banca: Ivair Aparecido dos Santos / Banca: José de Los Santos Guerra / Banca: Jean-Claude M'Peko / O Programa de Pós-Graduação em Ciência e Tecnologia de Materiais, PosMat, tem caráter institucional e integra as atividades de pesquisa em materiais de diversos campi da Unesp / Resumo: O Sistema ferroelétrico Pb'Z IND. 1-x''Ti IND. x''O IND. 3'(PZT) vem sendo amplamente estudado devido a interessantes propriedades físicas para composições próximas ao contorno de fase morfotrópico (CFM). No PZT o CFM se encontra em composições próximas a x = 0,50 no diagrama de fases, e separa a fase tetragonal da monoclínica. Nesta região é onde o PZT exibe elevado coeficiente eletromecânico. Comportamento e características similares também são exibidos no sistema 'Pb('Mg IND. 1/3''Nb IND. 2/3''O IND. 3) IND. (1-x)'Ti IND. x''O IND. 3' (PMN-PT), com propriedades eletromecânicas uma ordem de magnitude superior ao das cerâmicas de PZT. Desde a descoberta de uma fase ferroelétrica monoclínica nas proximidades do CFM para sistemas PZT e PMN-PT, estes ferroelétricos vem atraindo a atenção de diversos pesquisadores na tentativa de compreender a relação entre as características estruturais e as propriedades piezelétricas. Além disso, a descoberta de uma transição de fase estrutural induzida pela aplicação de um campo elétrico externo no PMN-PT realça o importante papel da fase intermediária monoclínica na alta resposta eletromecânica destes materiais. Nesta tese, transições de fases estruturais nos sistemas PZT e PMN-PT foram investigadas utilizando a técnica de espectroscopia de infravermelho em função da temperatura. Os estudos em função da temperatura foram centrados nos modos 'v IND. 1'-stretching, dos octaedros 'BO IND. 6' na estrutura 'AB IND. 3', e nas correspondentes larguras a meia altura 'W IND. i' para os sistemas PZT e PMN-PT. A ocorrência de anomalias no modo 'v IND. 1'-stretching foi associada à transição de fase estrutural. Um estudo suplementar, da influência de campos elétricos contínuos e alternados, nas propriedades dielétricas em função da temperatura para cerâmicas de PMN-35PT foi conduzido utilizando espectroscopia de impedância. / Abstract: The Pb'Z IND. 1-x''Ti IND. x''O IND. 3'(PZT) ferroelectric system has been extensively studied because of its interesting physical proprieties close to the morphotropic phase boundary (MPB), the nearly vertical phase boundary between the tretragonal and monoclinic regions of the phase diagram to x = 0.50, where the material exhibits outstanding electromechanical proprieties. Similar behavior and features are also present in 'Pb('Mg IND. 1/3''Nb IND. 2/3''O IND. 3) IND. (1-x)'Ti IND. x''O IND. 3' (PMN-PT), with electromechanical proprieties sometimes one order of magnitude large than PZT ceramics. Since the discovery of a ferroelectric monoclinic phase in the PZT and PMN-PT system, for composition close to MPB that was not predicted on the original phase diagram, these ferroelectrics attained the attention of several researches due to the possibility of understanding the relatonship between structural features and piezoelectric properties. Moreover, interesting electric field induced phase transitions were discovered in PMN-PT highlighting the important role of the intermediate monoclinic phase for high electromechanical response of this material. In this thesis, structural phase transition was PZT and PMN-PT system were investigated by infrared spectroscopy as a function of temperature. Studies were centered on monitoring the behavior of the 'v IND. 1'-stretching modes and corresponding half width 'W IND. i' as a function of temperature in 'BO IND. 6' octahedron in 'AB IND. 3' structure of the PZT and PMN-PT. The occurrences of the anomalies in the 'v IND. 1'-stretching modes were associated to a structural phase transition. Additional temperature dependence of dielectric properties for PMN-0.35PT ceramics under different dc bias and ac driving electric fields were investigated by impedance spectroscopy. / Doutor

Bismuth layer-structured ferroelectrics have been recognised as promising film materials for ferroelectric random access memory application due to their excellent fatigue resistance and other electrical properties. This work deals with the deposition and characterisation of epitaxial and polycrystalline W-doped SrBi2Ta2O9 (SBT) and lanthanide-doped bismuth titanate (BiT) films. SBT and W-doped SBT films were fabricated by pulsed laser deposition (PLD) on platinised silicon substrates. The effects of fabrication temperature and W-doping level on film properties were studied. The crystallinity of SBTW films improved with increasing fabrication temperatures, resulting in enhanced ferroelectric properties and dielectric properties above the fabrication temperature of 750 °C. Dense ceramic samples of Nd- and Sm-doped BiT (BNdT and BSmT) were successfully fabricated for PLD targets by solid state processing. Highly epitaxially (001)-, (118)-, and(104)-oriented Nd-doped bismuth titanate (BNdT) films were grown by PLD on (001)-, (011)-,and (111)-oriented SrTiO3 (STO) single crystal substrates, respectively. A three-dimensional orientation relationship between films and substrates was derived as: BNdT(001)//STO(001),BNdT[ 110 ]//STO[100]. Films showed strong dependence of structural and ferroelectric properties on the crystal orientation. PLD-grown BSmT films on platinised silicon substrates were studied as a function of fabrication temperature, effects of Pt bottom layer orientation, Sm doping level, and LaNiO3 buffer layer. An alkoxide-salt chemical solution deposition (CSD) method was adopted to prepare the precursors for BSmT (BNdT) film fabrication. Precursors of Bi-Sm(Nd)-Ti which were stable for at least eight months in air ambient were successfully developed. In-situ FT-IR studies suggest that acetic acid serves as chelating agent to improve the homogeneity of the precursor solution by generating a dense and homogeneous Ti-O-Ti polymeric network. The electrical properties of the films fabricated in this study (dielectric and ferroelectric properties, leakage current characteristics and electrical fatigue properties), are comparable or superior to these previously reported for similar films developed by other techniques or with other doping elements. Low temperature electrical properties of BSmT films suggest that the films are very promising for extremely low temperature nonvolatile memory applications. The results of BNdT films annealed at different oxygen partial pressure (O2, air, N2) showed that oxygen ambience affected structural properties of the films by enhancing the growth of perovskite phase (phase formation), increasing grain size (grain growth), and assisting the growth of (117)-oriented grains (crystallographic orientations). Piezoresponse force microscopy (PFM) was adopted to characterise BSmT films. Domain structures were clearly observed in a PLD-grown BSmT film, which were closely related to the grain structures. Domain manipulation was carried out in a CSD-derived BSmT film, showing that the film can be nearly uniformly polarised, which can be used in nanoscale device fabrication. Clear hysteresis loops were measured by PFM, which was an important proof of ferroelectricity. Large spatial variations of piezoelectric hysteresis loops of a CSD-derived BSmT film were observed across the film surface. Effective electrostriction coefficient (Qeff) of a PLD-grown BSmT film was measured, showing that BSmT films had better piezoelectric properties (higher Qeff, higher dzz) than SBT films, un-doped BiT ceramics and films. It suggests that BSmT films are promising piezoelectric materials for MEMS use.

No description available.

Thesis (doctoral)--Helsinki University of Technology, 2009. / Includes bibliographical references. Also available on the World Wide Web.

Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2008. / Includes bibliographical references. Also available in electronic version.

Thesis (doctoral)--University of Oulu, 2008. / Includes bibliographical references. Also available on the World Wide Web.