Micro-direct methanol fuel cells (micro-DMFC) can be the power supply solution for the next generation of handheld devices. The applications of the micro-DMFCs require them to have high compactness, high performance, light weight, and long life. The major goal of this research project is to enhance the volumetric power density of direct methanol fuel cells (DMFCs). A performance roadmap has been formulated and showed that patterning the planar membrane electrode assembly (MEA) to 2-D and 3-D corrugated manifolds can greatly increase the power generation with very modest overall volume increases. In this project, different manufacturing processes for patterning MEAs with corrugations have been investigated. A folding process was selected to form 2D triangular corrugations on MEAs for experimental validations of the performance prediction. The experimental results show that the volumetric power densities of the corrugated MEAs have improved by about 25% compared to the planar MEAs, which is lower than the expected performance enhancement. ABAQUS software was used to simulate the manufacturing process and identify the causes of deformations during manufacture. Experimental analysis methods like impedance analysis and 4 point-probes were used to quantify the performance loss and microstructure alteration during the forming process. A model was proposed to relate the expected performance of corrugated MEAs to manufacturing process variables. Finally, different stacking configurations and issues related to cell stacking for corrugated MEAs are also investigated.

Tato diplomová práce zkoumá problematiku detektoru infračerveného záření nazývaného bolometr. Cílem je pokrok v detekci infračerveného záření použitím odlišné absorpční vrstvy modifikovanou karbonovými nanotrubicemi. V teoretické části jsou uvedeny základní fyzikální pojmy z problematiky teplotního managmentu a základních fyzikálních vztahů bolometru. Design bolometru je představen a popsán. Teplotně mechanické simulace předvídají chování bolometru při detekci infračerveného záření. PSpice model je vytvořen a kombinuje termální a elektrické vlastnosti čipu bolometru. Dále je uveden proces výroby bolometru, které je detailně popsán.

Cette thèse a pour but de contribuer à la mise au point et le développement, de plaques mono ou bipolaires composites pour piles à combustibles à membranes échangeuses de protons (ou PEMFC). Les plaques mono ou bipolaires (selon le type de refroidissement choisi) sont un élément essentiel au fonctionnement des piles car elles l’alimentent en gaz réactifs (hydrogène et oxygène de l’air), assurent la tenue mécanique des cellules, la séparation des compartiments anodique et cathodique, le collectage des électrons, et l’évacuation des « sous-produits » eau et chaleur. L’optimisation des propriétés physico-chimiques et mécaniques des plaques, et de leur procédé d’élaboration, permettra de rendre de ce fait la technologie pile à combustible plus accessible Après une étude bibliographique centrée sur les systèmes composites à taux de charges ou de renforts élevé et leurs propriétés physicochimiques, mécaniques et électriques, la 2ème phase sera axée sur une contribution à l’optimisation des formulations par des analyses morphologiques, physiques et physicochimiques pertinentes. La 3ème phase sera dédiée à l’analyse des plaques mono ou bipolaires après tests en piles afin de permettre des choix entre les différentes formulations ou procédés de mise en œuvre des plaques mono et bipolaires et dégager des paramètres pertinents reliés aux propriétés d’usage et à leur évolution au cours du temps en conditions réelles d’utilisation. / The objective of this work is to design carbon polymer composites for bipolar plates, with high and homogeneous electrical and mechanical properties. A method was designed in order to analyze the electrical conductivity homogeneity of the bipolar plates. Several designs of experiments were formulated after optimization of the most influencing formulation parameters on the use properties. This first step enhanced the use properties of the resulting materials, though insufficiently. The plates characterization showed highly heterogeneous and anisotropic use properties. The fabrication process conditions optimization (thermosets formulations) and the addition of an annealing step (thermoplastic formulations) then improved significantly the use properties and their homogeneity.

Orientador: Luiz Carlos Kretly / Dissertação (mestrado) - Universidade Estadual de Campinas, Faculdade de Engenharia Eletrica e de Computação / Made available in DSpace on 2018-08-14T12:34:11Z (GMT). No. of bitstreams: 1 Silva_MauricioWeberBenjoda_M.pdf: 7910629 bytes, checksum: ba689f61e380994adce43b3aad0b347c (MD5) Previous issue date: 2009 / Resumo: O desenvolvimento de chaves MEMS (Micro Electro Mechanical System) de RF, usando os conceitos e a tecnologia de placa de circuito impresso (PCB) é objeto desta pesquisa. Foram fabricadas micro-chaves na configuração paralela, sobre guias de onda coplanares (CPW). Recentemente, suas aplicações vêm sendo direcionadas a circuitos mais sofisticados, onde são monoliticamente integrados com outros componentes de RF, como antenas e deslocadores de fase. As chaves desenvolvidas são projetadas para operar com baixa tensão de ativação, e fabricadas usando a técnica surface micromachining, que consiste em construir as estruturas em camadas de filmes finos, e removendo as camadas sacrificiais até a liberação da parte flexível do dispositivo. Neste trabalho é apresentada toda a metodologia do projeto, incluindo as simulações eletromecânicas e eletromagnéticas das chaves MEMS em PCB, bem como s caracterizações. As chaves mostraram desempenho compatível com dispositivos equivalentes comerciais de RF, apresentando larga banda de operação de 1,8 - 18 GHz. Tendo em vista o desempenho físico e operacional dos dispositivos fabricados, essa tecnologia mostra-se viável com tecnologias dominadas localmente e se aplica tanto para Rádio Freqüência como para micro-ondas. / Abstract: The development of RF MEMS (Micro Electro Mechanical System) switches, using the concepts and technology of Printed Circuited Board (PCB) is the object of this research. Micro switches in the shunt configuration through the Coplanar Waveguide (CPW) were manufactured. Recently, its applications have been directed to more sophisticated circuits, which are monolithic integrated with other RF components such as antennas and phase shifters. The developed switches are designed to operate with low actuation voltage and manufactured using the surface micromachining technique, which consists to build the structures in thin film layers, and removing the sacrificial layers to the release of the flexible device part. In this work is presented all the methodology of the project, including the electromechanical and electromagnetic simulations of the MEMS switches on PCB, as well as the characterizations. The switches had shown compatible performance when compared with equivalent RF devices available in the market, showing broadband operation from 1,8 - 18 GHz. Due the physical and operational performance of the manufactured devices, this technology shows viable with locally known technologies and feasible for applications in both Radio Frequency and microwave. / Mestrado / Eletrônica, Microeletrônica e Optoeletrônica / Mestre em Engenharia Elétrica

Les travaux de thèse portent sur le développement de méthodologies d'élaboration de dispositifs à base de polymères PDMS, destinés à des applications médicales. Ce travail s'appuie sur deux volets applicatifs : le développement de matrices de micro-capteurs capacitifs souples portables destinées à la mesure de champs de pression dans un contexte de suivi d'appuis du corps humain, et le développement d'une technique de collage réversible de composants PDMS dans une application de laboratoire sur puce en micro-fluidique. Dans ces travaux, les propriétés mécaniques du PDMS sont déterminées expérimentalement et à l'aide de modélisations numériques, afin d'identifier les éléments essentiels du dimensionnement des micro-capteurs capacitifs. Différents types de micro-capteurs de pression souples sont réalisés par un procédé de microfabrication à transfert de films. Ce procédé est optimisé à chacune de ses étapes afin d'obtenir un procédé fiable et reproductible. Les caractérisations électromécaniques montrent que les capteurs fabriqués sont opérationnels et adaptés aux applications médicales visées. Les capteurs de pression normale ont une variation de capacité de 3 à 17 % à 10 N - 300 kPa, adaptée à une application dentaire. Les capteurs à trois axes de sensibilité ont une résolution spatiale de 25 mm2, et une sensibilité de 4 % à 3 N en compression et 1,4 % par Newton en cisaillement pur, et sont adaptés à une application de mesure de la pression plantaire destinée à l'analyse de la marche et la détection des hyper-appuis. Par ailleurs, deux méthodes différentes permettant le collage réversible de composants PDMS sont développées. Les dispositifs microfluidiques fabriqués avec ces méthodes peuvent être utilisés avec jusqu'à 5 cycles de collage/décollage, et travailler à débit élevé (500 µL/min, correspondant à une pression de 148 kPa). Les méthodologies développées dans ces travaux ouvrent la voie à l'élaboration de dispositifs à base de PDMS performants et optimisés pour répondre à des cahiers des charges exigeants pour des applications biomédicales ciblées. / This thesis focuses on the development of methodologies dedicated to the development of PDMS-based devices, which are required in medical applications. Two objective applications are considered in this work: i) the development of wearable flexible micro-sensors arrays for measuring pressure fields on human body and ii) the development of a reversible bonding technique of PDMS components dedicated to microfluidic chips. In this work, the mechanical properties of PDMS are determined using experiments and computations; they allow identifying the essential elements of the design of capacitive micro-sensors. The manufacturing process is reliable and reproducible, and different types of flexible pressure sensor have been fabricated by a film transfer process. Electromechanical characterizations show that the fabricated sensors are fully operational and suitable for the intended applications. Normal pressure sensors have a capacitance change ranging from 3 to 17% under a 10 N - 300 kPa - load, which is suitable for dental applications. Fabricated triaxial sensor arrays have a spatial resolution of 25 mm2, and a sensitivity of 4% under 3 N load in compression, and 1.4% / N under shear. These features are suitable for plantar pressure measurements required in gait analyses or for the detection of over-pressures. Besides, two different process methods for the reversible bonding of PDMS devices are developed. The microfluidic devices fabrcitated with these methods can be used within up to 5 “bonding & peeling off” cycles, and can be working at high microfluidic flows (500 µL / min, corresponding to a pressure of 148 kPa). The methodologies developed in these works open the way to the design and fabrication of PDMS-based devices suitable for demanding biomedical applications.

Solar cells based on organohalide perovskites (PSCs) have made rapid progress in recent years and are a promising emerging technology. An important next evolutionary step for PSCs is their up-scaling to commercially relevant dimensions. The main challenges in scaling PSCs to be compatible with current c-Si cells are related to the limited conductivity of the transparent electrode, and the processing of a uniform and defect-free organohalide perovskite layer over large areas. In this work we present a generic and simple approach to realizing efficient solution-processed, monolithic solar cells based on methylammonium lead iodide (CH₃NH₃PbI₃). Our devices have an aperture area of 25 cm² without relying on an interconnected strip design, therefore reducing the complexity of the fabrication process and enhancing compatibility with the c-Si cell geometry. We utilize simple aluminum grid lines to increase the conductivity of the transparent electrode. These grid lines were exposed to an UV-ozone plasma to grow a thin aluminum oxide layer. This dramatically improves the wetting and film forming of the organohalide perovskite junction on top of the lines, reducing the probability of short circuits between the grid and the top electrode. The best devices employing these modified grids achieved power conversion efficiencies of up to 6.8%.

O trabalho realizado nesta tese esteve apoiado em dois objetivos principais. O primeiro centrado na otimização das etapas e processos de fabricação de células solares de silício de alto rendimento envolvendo redução de custos. O segundo objetivo foi direcionado na implementação de células solares eficientes e não dependentes do armadilhamento de impurezas através da difusão de alumínio. Para levar a cabo estes objetivos de forma planejada, o trabalho dividiu-se em otimizações teóricas e implementações experimentais. As otimizações teóricas foram realizadas utilizando dois programas: um programa desenvolvido (simulacell.pas) e implementado no próprio LME (versão 2), e o outro adquirido comercialmente, PC1D. De acordo com os resultados obtidos em estruturas completas n+p e n++n+p foi possível concluir que tanto as estruturas formadas através de emissores homogêneos como as obtidas utilizando emissores duplamente difundidos permitem alcançar eficiências elevadas, 25,5% a 26,0%, respectivamente, em um amplo intervalo de espessuras e concentrações superficiais de dopantes. No que tange aos desenvolvimentos experimentais, este trabalho se inicia com o desenvolvimento de um processo simplificado de baixo custo, em células solares de silício Cz de baixa resistividade com estrutura n+pp+, tipo \"mesa\". Este processo simplificado também está baseado na difusão de fósforo e alumínio (P/Al), utilizando gases industriais e reagentes químicos de grau \"para análise\", como uma transposição do processo de fabricação anteriormente desenvolvido no LME-EPUSP em substratos de silício FZ utilizando tecnologia planar. A célula solar mais representativa do processo implementado, A-16-1, permitiu atingir eficiências no entorno de 17%. As implementações experimentais visaram inicialmente o desenvolvimento de um procedimento visando à qualificação de materiais de partida (silício), utilizando a técnica de decaimento fotocondutivo (PCD) através de dois procedimentos de passivação de superfícies; oxidações térmicas e difusões suaves de fósforo. Posteriormente, utilizando o sistema PCD, novas otimizações dos emissores de tipo n+ homogêneos e regiões de tipo p foram realizadas, seguidos por oxidações térmicas passivadoras hidrogenadas, preservando-se o tempo de vida do volume em valores elevados (aproximadamente 1ms, após a realização de todas as etapas térmicas). Estes resultados qualificam o silício e os materiais de consumo utilizados, assim como, o novo processo de fabricação desenvolvido. Esta técnica também permitiu qualificar os emissores com perfil Gaussianos processados, atingindo valores da ordem de 45fA/cm2 para densidades de recombinação em estruturas n+pn+. Desenvolveram-se também estruturas n+p em materiais Cz de baixa resistividade 2-3W.cm de dois diferentes fabricantes, e silício FZ com 0,5W.cm. Pôde ser comprovada a qualidade das etapas que compõem o processo completo otimizado tendo-se obtido tensões de circuito aberto-implícitas de 652,4mV (Si-Cz fabricante 1) e 662,6mV (Si-Cz fabricante 2), e 670,8mV (FZ). De acordo com simulações realizadas utilizando parâmetros habituais de dispositivos do próprio LME, estas tensões, quando associadas a um conjunto óptico frontal típico das células solares de alto rendimento do LME (texturização química aleatória e filme de SiO2), permitirão atingir valores entre 19% - 20%. Entretanto, utilizando texturização e camada dupla torna-se plausível atingir o marco de 21% de rendimento, ultrapassando assim a barreira dos 17% (recorde nacional), e comprovando a potencialidade da infra-estrutura deste laboratório para o desenvolvimento de células solares não dependentes do efeito do armadilhamento de impurezas através da difusão de alumínio. / The work developed at this thesis has been based on two main objectives. First, it was focused on the optimization of the steps and processes for the fabrication of high efficiency solar cells, reducing production costs. The latter objective was directed to develop solar cells that were efficient and non-dependent on impurities gettering performed through the aluminum diffusion. In order to attend the planned objectives the work was divided into the theoretical objectives and experimental developments. The theoretical optimizations were performed using two different program codes: one was developed at LME (simulacell.pas), being upgraded afterwards (version 2); and the other was acquired commercially, the PC1D. According to the obtained results in complete structures n+p and n++n+p, it was possible to conclude that the homogeneous and double diffused emitter structures can provide high efficiencies, from 25,5% to 26,0%, respectively, for a wide range of thicknesses and surface doping levels. Concerning the experimental developments, this work starts with a low cost simplified process, using Cz silicon solar cells with low base resistivity and the structure n+pp+, \"mesa\" type. This simplified process was also based on the phosphorus/ aluminum diffusion (P/Al), using industrial gases and for analysis grade chemical reagents, as a fabrication process transposition of the process previously developed at LME-EPUSP using silicon substrates with planar technology. The most representative solar cells of the implemented process, A-16-1, provided about a 17% efficiency. The experimental implementations aimed the development of procedure for starting material (silicon) qualification, by using the photoconductive decay technique (PCD) with two surface passivation procedures: thermal oxidation and light phosphorus diffusion. Later, using PCD system, new optimizations of n+ homogeneous emitters and p-type region were performed, followed by passivating thermal oxidations with hydrogenation, maintaining the volume lifetime at high values (approximately 1ms, after each thermal step). These results qualified the used silicon and the consumer materials, as well the new fabrication process developed. This technique has also allowed qualifying the processed Gaussian profile emitters, providing values about 45fA/cm2 for the recombination current density in n+pp+ structures. N+p structures were also developed using Cz silicon with low resistivity 2- 3W.cm of two different manufacturers and FZ with 0.5W.cm. It could be proved the quality of the steps of a complete optimized process resulting implicit open circuit voltages of 652.4mV (Cz silicon - manufacturer type 1), 662.6mV (Cz silicon - manufacturer type 2), and 670.8mV (FZ silicon). According to the theoretical simulations performed using the usual parameters of devices processed at LME (random chemical texturization and SiO2 film), efficiencies between 19%-20% can be reached. However, using a random texturization and a double layer anti-reflection system, a 21% efficiency becomes possible, surpassing the 17% barrier (national record), and proving the potentiality of this laboratory facility for the development of solar cells non-dependent on impurity gettering through the aluminum diffusion.

O trabalho realizado nesta tese esteve apoiado em dois objetivos principais. O primeiro centrado na otimização das etapas e processos de fabricação de células solares de silício de alto rendimento envolvendo redução de custos. O segundo objetivo foi direcionado na implementação de células solares eficientes e não dependentes do armadilhamento de impurezas através da difusão de alumínio. Para levar a cabo estes objetivos de forma planejada, o trabalho dividiu-se em otimizações teóricas e implementações experimentais. As otimizações teóricas foram realizadas utilizando dois programas: um programa desenvolvido (simulacell.pas) e implementado no próprio LME (versão 2), e o outro adquirido comercialmente, PC1D. De acordo com os resultados obtidos em estruturas completas n+p e n++n+p foi possível concluir que tanto as estruturas formadas através de emissores homogêneos como as obtidas utilizando emissores duplamente difundidos permitem alcançar eficiências elevadas, 25,5% a 26,0%, respectivamente, em um amplo intervalo de espessuras e concentrações superficiais de dopantes. No que tange aos desenvolvimentos experimentais, este trabalho se inicia com o desenvolvimento de um processo simplificado de baixo custo, em células solares de silício Cz de baixa resistividade com estrutura n+pp+, tipo \"mesa\". Este processo simplificado também está baseado na difusão de fósforo e alumínio (P/Al), utilizando gases industriais e reagentes químicos de grau \"para análise\", como uma transposição do processo de fabricação anteriormente desenvolvido no LME-EPUSP em substratos de silício FZ utilizando tecnologia planar. A célula solar mais representativa do processo implementado, A-16-1, permitiu atingir eficiências no entorno de 17%. As implementações experimentais visaram inicialmente o desenvolvimento de um procedimento visando à qualificação de materiais de partida (silício), utilizando a técnica de decaimento fotocondutivo (PCD) através de dois procedimentos de passivação de superfícies; oxidações térmicas e difusões suaves de fósforo. Posteriormente, utilizando o sistema PCD, novas otimizações dos emissores de tipo n+ homogêneos e regiões de tipo p foram realizadas, seguidos por oxidações térmicas passivadoras hidrogenadas, preservando-se o tempo de vida do volume em valores elevados (aproximadamente 1ms, após a realização de todas as etapas térmicas). Estes resultados qualificam o silício e os materiais de consumo utilizados, assim como, o novo processo de fabricação desenvolvido. Esta técnica também permitiu qualificar os emissores com perfil Gaussianos processados, atingindo valores da ordem de 45fA/cm2 para densidades de recombinação em estruturas n+pn+. Desenvolveram-se também estruturas n+p em materiais Cz de baixa resistividade 2-3W.cm de dois diferentes fabricantes, e silício FZ com 0,5W.cm. Pôde ser comprovada a qualidade das etapas que compõem o processo completo otimizado tendo-se obtido tensões de circuito aberto-implícitas de 652,4mV (Si-Cz fabricante 1) e 662,6mV (Si-Cz fabricante 2), e 670,8mV (FZ). De acordo com simulações realizadas utilizando parâmetros habituais de dispositivos do próprio LME, estas tensões, quando associadas a um conjunto óptico frontal típico das células solares de alto rendimento do LME (texturização química aleatória e filme de SiO2), permitirão atingir valores entre 19% - 20%. Entretanto, utilizando texturização e camada dupla torna-se plausível atingir o marco de 21% de rendimento, ultrapassando assim a barreira dos 17% (recorde nacional), e comprovando a potencialidade da infra-estrutura deste laboratório para o desenvolvimento de células solares não dependentes do efeito do armadilhamento de impurezas através da difusão de alumínio. / The work developed at this thesis has been based on two main objectives. First, it was focused on the optimization of the steps and processes for the fabrication of high efficiency solar cells, reducing production costs. The latter objective was directed to develop solar cells that were efficient and non-dependent on impurities gettering performed through the aluminum diffusion. In order to attend the planned objectives the work was divided into the theoretical objectives and experimental developments. The theoretical optimizations were performed using two different program codes: one was developed at LME (simulacell.pas), being upgraded afterwards (version 2); and the other was acquired commercially, the PC1D. According to the obtained results in complete structures n+p and n++n+p, it was possible to conclude that the homogeneous and double diffused emitter structures can provide high efficiencies, from 25,5% to 26,0%, respectively, for a wide range of thicknesses and surface doping levels. Concerning the experimental developments, this work starts with a low cost simplified process, using Cz silicon solar cells with low base resistivity and the structure n+pp+, \"mesa\" type. This simplified process was also based on the phosphorus/ aluminum diffusion (P/Al), using industrial gases and for analysis grade chemical reagents, as a fabrication process transposition of the process previously developed at LME-EPUSP using silicon substrates with planar technology. The most representative solar cells of the implemented process, A-16-1, provided about a 17% efficiency. The experimental implementations aimed the development of procedure for starting material (silicon) qualification, by using the photoconductive decay technique (PCD) with two surface passivation procedures: thermal oxidation and light phosphorus diffusion. Later, using PCD system, new optimizations of n+ homogeneous emitters and p-type region were performed, followed by passivating thermal oxidations with hydrogenation, maintaining the volume lifetime at high values (approximately 1ms, after each thermal step). These results qualified the used silicon and the consumer materials, as well the new fabrication process developed. This technique has also allowed qualifying the processed Gaussian profile emitters, providing values about 45fA/cm2 for the recombination current density in n+pp+ structures. N+p structures were also developed using Cz silicon with low resistivity 2- 3W.cm of two different manufacturers and FZ with 0.5W.cm. It could be proved the quality of the steps of a complete optimized process resulting implicit open circuit voltages of 652.4mV (Cz silicon - manufacturer type 1), 662.6mV (Cz silicon - manufacturer type 2), and 670.8mV (FZ silicon). According to the theoretical simulations performed using the usual parameters of devices processed at LME (random chemical texturization and SiO2 film), efficiencies between 19%-20% can be reached. However, using a random texturization and a double layer anti-reflection system, a 21% efficiency becomes possible, surpassing the 17% barrier (national record), and proving the potentiality of this laboratory facility for the development of solar cells non-dependent on impurity gettering through the aluminum diffusion.