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1	Low-field microwave absorption in pulsed lased deposited FeSi thin films Gavi, H.M. (Happyson Michael) 26 June 2012 (has links) The magnetic behavior of cubic B20 crystal structure FeSi thin film has been previously probed at macroscopic level using a magnetometer. The results revealed ferromagnetic state with significant hysteresis. This is contrary to the bulk with the same cubic B20 crystal structure that is paramagnetic. The origin of ferromagnetism in thin films in contrast to paramagnetism in the bulk is unclear and unexplained. Electron spin resonance technique (ESR) was used as a tool to characterize the magnetic behavior of FeSi thin films at microscopic level. With ESR technique, B20 crystalline FeSi show microwave power absorption centred at zero field (HDC = 0) termed low-field microwave absorption (LFA) in addition to usual ferromagnetic resonance (FMR) typical of magnetic materials. LFA was observed as a distinct signal in these films. This signal has been observed in several other materials other than FeSi thin films. However in FeSi thin films it was for the first time that LFA signal was observed. The LFA is closely connected to the magnetization process that occurs at low applied field. LFA is a new technique that has recently been used to detect the magnetic transition in materials, sensitive detection of magnetic order and more importantly to distinguish between different dynamics of microwave absorption centres. The LFA measurements were made at 9.4 GHz (X-band) on pulse laser deposited (PLD) polycrystalline B20 cubic structure FeSi thin film grown on Si (111) substrate. PLD is regarded as a powerful tool for thin film growth. The LFA properties of the films were investigated as a function of DC field, temperature, microwave power and orientation of DC field with respect to the film surface. The LFA signal is very strong when the DC field is parallel to the film surface and diminishes at higher angles. This is attributed to induced anisotropy field (IAF) and surface anisotropy field (SAF) contributing to total anisotropy field (TAF). The LFA signal strength increases as the microwave power is increased, such increase is due to impedance and thus showing that LFA and magnetoimpedance (MI) has common origin. The LFA signal disappears around 340 K which can be attributed to the disappearance of long range order giving us a positive signature of surviving magnetic state well above room temperature in these films. We believe that domain structure evolution in low-fields, which in turn modifies the low field permeability as well as the anisotropy, could be the origin of LFA observed in these films. MI and LFA can be understood as the absorption of electromagnetic radiation by spin systems that are modified by domain configuration and strongly depend on anisotropy field. The observation of LFA opens the possibility of FeSi films to be used as potential candidates of low magnetic field sensors in the microwave and radio frequency regions. Copyright / Dissertation (MSc)--University of Pretoria, 2012. / Physics / unrestricted Fesi thin films Microwave UCTD
2	Etude des pertes magnétiques dans les matériaux magnétiques destinés aux applications de transport en haute fréquence et sous champ bidirectionnel / Study of magnetic losses on magntic materials destinated to transport applications at high frequency and under bidirectionnal magnetic field. Hamrit, Oussama 08 October 2015 (has links) Les pertes fer dans une machine électrique sont d'importance capitale, une estimation approximative de ces pertes peu mener à des solutions non viable sur le plan thermique, c'est dans ce contexte qu'il est indispensable d'avoir les caractéristiques les plus précises des matériaux magnétiques utilisés, de plus avec l'engouement récent pour les machines électriques haute vitesse (donc haute fréquence), il est important de caractériser les matériaux à haute fréquence. Dans les travaux de cette thèse, un système de mesure haute fréquence (1 T - 10 kHz) en champ unidirectionnel a été mis en place et des modèles de pertes magnétiques hautes fréquences ont été étudiés et discutés. Les champs magnétiques circulant dans une machine électrique sont de type alternatifs dans une direction donnée ou des champs elliptiques et tournants. C'est dans ce contexte qu'une caractérisation et un modèle en champ tournant ont été proposés. Enfin, dans le cas où le stator d'une machine électrique est découpé d'un seul tenant, la direction de découpe par rapport àla direction de laminage change d'un pas dentaire à un autre, pour cela une étude sur l'anisotropie des matériaux FeSi non orientés a été menée. / Iron losses in electrical machine applications are of paramount importance, an approximate estimation of these losses can easily lead to a thermally unsustainable solution, in this context, it is essential to get exactly the magnetic characteristics of the magnetic materials used, moreover, with the recent interest for high speed electrical machines (high frequency), It is important to characterize magnetic materials at high frequency. In this work, a high frequency characterizing system (1 T - 10 kHz) under unidirectional field has been proposed and magnetic losses models has been studied and discussed. Magnetic fields in electrical machines could be alternative in one direction, elliptical or circular. In this context, a characterization under rotating field and a magnetic loss model has been proposed. Finally, when stator steel sheets are cut all in one piece, the cutting direction with regard to the rolling direction will change from one tooth pitch to another, for that a study of the FeSi non oriented anisotropy has been performed. Pertes magnétiques Haute fréquence Anisotropie FeSi Iron losses High frequency Anistropy FeSi
3	Growth and characterization of FeSi nanowires by chemical vapor deposition for gas sensing applications Thabethe, Sibongiseni Stanley January 2014 (has links) >Magister Scientiae - MSc / FeSi nanowires were synthesized via a chemical vapor deposition method. Anhydrous FeCl3 powder in this case served as the Fe source and was evaporated at a temperature of 1100oC to interact with silicon substrates which served as the silicon source. The nanowires followed the vapor solid (VS) growth mechanism, which does not require the use of a metal catalyst; the native silicon oxide layer on the silicon substrates played the role of the catalyst in the growth of these nanostructures. A second growth mechanism, involving the use of a metal catalyst to assist in the growth of the nanowires was attempted by depositing a thin film of gold on silicon substrates. The reaction yielded SiOx nanowires; these results are discussed in detail in Chapter 5. All the nanostructures were characterized by X-ray diffraction (XRD), Transmission Electron Microscopy (TEM), Scanning Electron Microscopy (SEM), Photoluminescence Spectroscopy (PL), Raman Spectroscopy and Fourier Transform Infrared Spectroscopy (FTIR). FeSi nanowires Chemical vapor deposition Band structures X-ray diffraction
4	Metallic to insulating transition in disordered pulsed laser deposited silicide thin films Abou Mourad, Houssam 01 June 2005 (has links) A metal-to-insulating transition has been observed in iron, iron oxide, iron silicide and cobalt silicide thin films when deposited on Si substrate with a native SiOx layer. This transition produced a change in resistance of 5 orders of magnitude at a temperature of 250 K. To the best of the author's knowledge, this effect has not been reported in the literature prior to this study. This work reports a systematic experimental investigation carried out to understand the fundamental mechanism involved in the manifestation of this metal-to-insulator transition. The films were deposited using the pulsed laser deposition technique (PLD) in a base vacuum of the order of 10-6 torr at 400o C and room temperature. Several experiments were systematically conducted to understand the nature of the transition and the current path. Deposition of films on different substrates and the deposition of different transition metal films were made to narrow down the physical origin of the transition in the sample. Temperature-dependent resistance measurements not only exhibited a transition but also suggested more than one conduction mechanism. This is confirmed by the data collected for the IV curves. Current and voltage have a linear relation at temperatures greater than the transition temperature, and a non-linear relation at lower temperatures. Magnetoresistance (MR) measurements revealed a quadratic dependence of the resistance on the applied magnetic field. This is an indication that the MR observed is due to Lorentz forces acting on the charge carriers. Transmission electron microscopy and x-ray photoelectron spectroscopy have identified different layers that are believed to be responsible for the observed transition. Iv Fesi Cosi Temperature dependence Resistance Magnetoresistance American Studies Arts and Humanities
5	Strukturelle Ordnung und Unordnung in binären und ternären Verbindungen des Galliums mit Ytterbium und Palladium Giedigkeit, Rainer 27 January 2008 (has links) (PDF) Um einen besseren Zugang zum Verständnis struktureller Eigenschaften von den ternären Verbindungen des Systems Yb–Pd–Ga zu bekommen, wurden zunächst die Ordnungs- und Unordnungsbeziehungen sowie die chemische Bindung in den Kristallstrukturen binärer Pd–Ga- bzw. Yb–Ga-Verbindungen analysiert. Im Rahmen der phasenanalytischen Untersuchungen des binären Systems Yb–Ga konnte eine neue Verbindung charakterisiert werden (Ytterbiumpentagallid). Für den galliumreichen Teil des ternären Phasendiagramms Yb–Pd–Ga wurde ein isothermer Schnitt bei 600 °C erstellt (&gt; 50 At.-% Ga). Die Homogenitätsbereiche der untersuchten Verbindungen wurden metallographisch bzw. röntgenographisch bestimmt. Die Kristallstrukturen wurden aus Röntgen-Einkristalldaten bestimmt. In den Kristallstrukturen wurden drei unterschiedliche Arten von Unordnung beobachtet (Substitutionsunordnung, Symmetrie-Brechung, Positionsunordnung). Für eine Reihe von Verbindungen des Systems Yb–Pd–Ga wurde der elektronische Zustand von Yb bestimmt. Dies gelang mit Hilfe von Messungen der magnetischen Suszeptibilität bzw. mit der Röntgen-Absorptionsnahkantenspektroskopie. Ytterbium Palladium Gallium Gallide Kristallstruktur Bandstruktur Zustandsdichte DOS ELF PNS NMR Feldgradient Suszeptibilität Widerstand Hall-Effekt XAS XANES Oxidationsstufe PdGa PtGa FeSi ytterbium palladium gallium gallide crystal structure band structure density of states DOS ELF PNS NMR field gradient magnetic suszeptibility electrical resistance Hall-Effect XAS XANES oxidation state PdGa PtGa FeSi ddc:540 rvk:VE 9507
6	Strukturelle Ordnung und Unordnung in binären und ternären Verbindungen des Galliums mit Ytterbium und Palladium Giedigkeit, Rainer 27 November 2007 (has links) Um einen besseren Zugang zum Verständnis struktureller Eigenschaften von den ternären Verbindungen des Systems Yb–Pd–Ga zu bekommen, wurden zunächst die Ordnungs- und Unordnungsbeziehungen sowie die chemische Bindung in den Kristallstrukturen binärer Pd–Ga- bzw. Yb–Ga-Verbindungen analysiert. Im Rahmen der phasenanalytischen Untersuchungen des binären Systems Yb–Ga konnte eine neue Verbindung charakterisiert werden (Ytterbiumpentagallid). Für den galliumreichen Teil des ternären Phasendiagramms Yb–Pd–Ga wurde ein isothermer Schnitt bei 600 °C erstellt (&gt; 50 At.-% Ga). Die Homogenitätsbereiche der untersuchten Verbindungen wurden metallographisch bzw. röntgenographisch bestimmt. Die Kristallstrukturen wurden aus Röntgen-Einkristalldaten bestimmt. In den Kristallstrukturen wurden drei unterschiedliche Arten von Unordnung beobachtet (Substitutionsunordnung, Symmetrie-Brechung, Positionsunordnung). Für eine Reihe von Verbindungen des Systems Yb–Pd–Ga wurde der elektronische Zustand von Yb bestimmt. Dies gelang mit Hilfe von Messungen der magnetischen Suszeptibilität bzw. mit der Röntgen-Absorptionsnahkantenspektroskopie. info:eu-repo/classification/ddc/540 ddc:540
7	Preconcentration strategies in capillary electrophoresis for the determination of pharmaceutical and personal care products Maijó Ferré, Irene 17 July 2012 (has links) L'objectiu principal d'aquestaTesi Doctoral és el desenvolupament de diferents estratègies per disminuir els límits de detecció de l’electroforesicapil•lar per a la determinació de compostos farmacèutics i els productes de cura personal. Aquestes estratègies es basen en les tècniques de preconcentració electroforètiques i cromatogràfiques, i l'ús de l’espectrometria de masses com a sistema de detecció. Com a tècniques de preconcentració electroforètiques s'han estudiat les tècniques de samplestacking i sweeping, i com a tècnica de preconcentració cromatogràficas’ha avaluat l'acoblament en línia entre l'extracció en fase sòlida i l'electroforesicapil•lar (In-line SPE-CE). Entre elsPPCPs, aquesta tesi doctoral es centra específicament en els antiinflamatoris no esteroïdals(AINE), els parabens i els filtres ultraviolats. Un altre dels objectius d'aquestaTesi Doctoral és estudiarl’aplicabilitat de les metodologies desenvolupades per a l'anàlisi de mostres ambientals per determinar PPCP. / The main objective of this Doctoral Thesis is the development of different strategies to decrease the detection limits of capillary electrophoresis for the determination of pharmaceutical and personal care products. These strategies are based on electrophoretic and chromatographic preconcentration techniques, and the use of mass spectrometry as a detection system. The electrophoretic preconcentration techniques studied included sample stacking techniques and sweeping while the chromatographic preconcentration technique evaluated was in-line coupling between solid phase extraction and capillary electrophoresis. With respect to PPCPs, this Doctoral Thesis focuses specifically on non-steroidal anti-inflammatory drugs (NSAIDs), parabens and UV-filters. Another objective of this Doctoral Thesis is to study the suitability of the developed methodologies for the determination of PPCPs in environmental samples. ASEI-sweeping Capillary electrophoresis (CE) Field-Enhanced Sample Injection (FESI) In-line SPE-CE Large volume sample stacking (LVSS) Parabens UV-filters Sweeping Water samples 54 543

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