The promising role resistive random-access memory (RRAM) plays in the imminent reality of wearable electronics calls for a new, updated physical model of their operating mechanism. Their high applicability as the next-generation flexible non-volatile memory (NVM) devices has promoted the recent emergence of a novel ultra-thin (< 5nm) organic/inorganic hybrid dielectric RRAM. A deep understanding of their resistive switching (RS) behavior is required to unlock their suitability in future electronics applications. However, the extremely reduced thicknesses bring about new challenges in terms of material characterization sample processing, while the RS observations through electrical characterization techniques lack uniformity in the key switching parameters, thus hindering the identification of any clear trends.  This work studies the RS mechanism in ultra-thin Al/Hf-hybrid/Ni RRAM devices through uniformity-improved electrical observations. First, the focus is to implement a ramped-pulse train method during the reset process to reduce the dispersion of the voltage and resistance fluctuations at different starting voltage amplitudes and pulse widths. After finding the optimal electrical programming conditions for reduced parameter dispersions, a temperature test was performed to study the contributions of the metal ions and oxygen vacancies (V2+) in the switching layer. Finally, a physical model describing the operating mechanism in flexible RRAM is proposed after the close observation and study of the processed devices. The model is based on the coexistence of a hetero-metallic portion composed of Al and Hf3Al2, and a V2+ portion connected to form the hybrid conducting filament (CF) and turning the device on. The CF forming processes emphasize the strong presence of these vacancies partaking in RS, as the temperature dependence results suggest the majority of their concentration to be generated during this step. Also, the different electrical potential, temperature, and concentration gradients influencing the V2+ migration during RS may explain some of the failure mechanisms in the rupture and the re-forming of the filament. Additionally, the possible presence of a thin Al-oxide layer in the Al/Hf-hybrid interface may give a reason for leaky on-states. A detailed physical model of the RS mechanism in next-generation flexible RRAMs is key to learn to unlock a range of emerging technologies fitted to today’s needs. / Den senaste introduktionen av ultratunn (<5 nm) organisk-oorganisk hybrid dielektrisk RRAM som nästa generations icke-flyktiga minnesenheter kräver en djup förståelse för hybridskiktresistiv växling (RS). Den extremt reducerade tjockleken hindrar emellertid deras bearbetbarhet för materialkarakteriseringstekniker. Dessutom hindrar den dåliga enhetligheten i viktiga omkopplingsparametrar fortfarande i RRAM att alla trender kan definieras tydligt genom elektrisk karakterisering. Detta arbete använder elektrisk manipulation genom en RPS-metod (ramped-pulse series) för att förbättra spännings- och motståndsfluktuationerna i återställningsprocessen för ultratunna Al/Hf-hybrid/Ni-enheter vid olika spänningsamplitud, pulsbredd och temperaturförhållanden. Från de erhållna RPS-optimerade resultaten föreslås en ny och detaljerad fysisk modell som beskriver driftsmekanismen. Samexistensen i den ledande filamenten (CF) av en hybridmetalldel, sammansatt av Al och Hf3Al2, och en syrevakansdel bekräftas. Vår modell betonar vakansbidraget i RS, där majoriteten genereras under CF-formningsprocessen och deltar i olika grad i filamentbrottet för RPS och ingen RPS-bearbetade enheter via Joule-uppvärmning, drift och Fick-krafter. Dessutom förklaras kopplingsfelhändelser baserat på närvaron av ett Al2O3-lager i Al/Hf-hybridgränssnittet.

3D printing applications have achieved increased success as an additive manufacturing (AM) process. Micro-structure of mechanical/biological materials present design challenges owing to the resolution of 3D printers and material properties/composition. Biological materials are complex in structure and composition. Efforts have been made by 3D printer manufacturers to provide materials with varying physical, mechanical and chemical properties, to handle simple to complex applications. As 3D printing is finding more medical applications, we expect future uses in areas such as hip replacement - where smoothness of the femoral head is important to reduce friction that can cause a lot of pain to a patient. The issue of print resolution plays a vital role due to staircase effect. In some practical applications where 3D printing is intended to produce replacement parts with joints with movable parts, low resolution printing results in fused joints when the joint clearance is intended to be very small. Various 3D printers are capable of print resolutions of up to 600dpi (dots per inch) as quoted in their datasheets. Although the above quoted level of detail can satisfy the micro-structure needs of a large set of biological/mechanical models under investigation, it is important to include the ability of a 3D slicing application to check that the printer can properly produce the feature with the smallest detail in a model. A way to perform this check would be the physical measurement of printed parts and comparison to expected results. Our work includes a method for using ray casting to detect features in the 3D CAD models whose sizes are below the minimum allowed by the printer resolution. The resolution validation method is tested using a few simple and complex 3D models. Our proposed method serves two purposes: (a) to assist CAD model designers in developing models whose printability is assured. This is achieved by warning or preventing the designer when they are about to perform shape operations that will lead to regions/features with sizes lower than that of the printer resolution; (b) to validate slicing outputs before generation of G-Codes to identify regions/features with sizes lower than the printer resolution.