<p>Magnetic Resonance Imaging, MRI, is a diagnostic tool in progress which has been available at major hospitals since the mid eighties. Today almost all hospitals world wide may depict the human body with their own MRI scanner. MRI is dependent on a uniform magnetic field inside the scanner tunnel and Radio frequent (RF) waves used for excitation of the magnetic dipole moments in the body. These properties along with the magnetic field surrounding the scanner are associated with dangerous effects - when interacting with medical implants made of metals. These dangerous effects are twisting forces or torques, heating and translational forces respectively. A database containing information about known implants behaviour regarding these effects among with earlier documentation and information concerning MRI patient safety at Karolinska hospital, Huddinge was constructed.</p><p>Also a phantom used for heating effect measurements was constructed and heating effect measurements were performed at a SPC4129 locking titanium Peritoneal Dialysis (PD) catheter adapter and a Deep Brain Stimulator (DBS) in order to test the phantom and confirm the theory about RF induced heating on medical implants. Evidence for heating effects caused by the implants was found.</p><p>A torque measurement apparatus was constructed and measurements were performed. All measurements where performed in order to investigate the functionality of the apparatus and also the theory behind dangerous magnetically induced torques (twisting movements). Substantial torque were measured on the ferromagnetic device used for the test.</p><p>The heating phantom and torque measurement apparatus is slightly modified models of those proposed by ASTM (American Society for Testing and Materials).</p>

Magnetic Resonance Imaging, MRI, is a diagnostic tool in progress which has been available at major hospitals since the mid eighties. Today almost all hospitals world wide may depict the human body with their own MRI scanner. MRI is dependent on a uniform magnetic field inside the scanner tunnel and Radio frequent (RF) waves used for excitation of the magnetic dipole moments in the body. These properties along with the magnetic field surrounding the scanner are associated with dangerous effects - when interacting with medical implants made of metals. These dangerous effects are twisting forces or torques, heating and translational forces respectively. A database containing information about known implants behaviour regarding these effects among with earlier documentation and information concerning MRI patient safety at Karolinska hospital, Huddinge was constructed. Also a phantom used for heating effect measurements was constructed and heating effect measurements were performed at a SPC4129 locking titanium Peritoneal Dialysis (PD) catheter adapter and a Deep Brain Stimulator (DBS) in order to test the phantom and confirm the theory about RF induced heating on medical implants. Evidence for heating effects caused by the implants was found. A torque measurement apparatus was constructed and measurements were performed. All measurements where performed in order to investigate the functionality of the apparatus and also the theory behind dangerous magnetically induced torques (twisting movements). Substantial torque were measured on the ferromagnetic device used for the test. The heating phantom and torque measurement apparatus is slightly modified models of those proposed by ASTM (American Society for Testing and Materials).

In this study, a liquid crystal display (LCD) is proposed to have a capability of viewing-angle-switching in all directions. In the proposed LCD, a three-electrode structure is used to control the viewing angle of the LCD. By using a bi-direction slit type electrode, fringe fields with two different directions are generated. The fringe fields cause a light leakage of the dark state in all directions. Experimental results reveal that the proposed LCD has viewing angle within 40o in both vertical and horizontal directions when the area ratio of the vertical and horizontal slit is 1:1. Furthermore, contrast ratio (CR) of the proposed LCD increases as cell gap increases. When the angle between polarizer axis and LC is 0, the proposed LCD has the highest CR in the normal direction. The personal privacy is protected based on the proposed LCD due to the all-direction light leakage in the dark state.

There is a large number of measurement techniques that is used for a surface inspection and a characterization of different types of materials. One of these techniques is a contact potential difference (CPD) scanning technique. In this project a non-vibrating contact potential difference (nvCPD) method is utilized to measure a work function and a topographical structure of a sample surface. A sample is mounted on a spindle that rotates at high speed. A nvCPD sensor detects work-function variations during movement above the sample surface. There are certain factors that create difficulties during the measurement process. A nonplanar sample surface, the spindle wobble and an incline of a mounted sample impede the safe (without impacting the surface) scanning at a close distance. The goal of this thesis was to implement a height sensor as a feedback device to dynamically control and adjust a CPD sensor flying height. Since a CPD signal is inversely proportional to the flying height, minimization of this height will enhance the signal magnitude, the signal-to-noise ratio and the resolution of measurements.

No description available.

This thesis addresses the fabrication, evaluation, and analysis of the probe tip of a non-vibrating contact potential difference sensor. The non-vibrating contact potential difference (nvCPD) probe measures the work function variation on a conducting surface and recent experiments performed to measure the size of surface features have shown poor correlation between actual and calculated probe tip dimensions. In order to address this deficiency, experiments were done and an analytical model was developed, including fringe electrical fields, that predicts the shape of the nvCPD probe signal as a function of probe tip geometry, work function variation, and experimental parameters. Probe tips were constructed with varying geometric properties and experiments using these probe tips were compared to a model. There was good correlation of the nvCPD probe output for a known work function change and probe tip geometry. The effective area of the probe tip resulting from electrical field fringing is expected to increase with dielectric thickness to a finite value, based on pre-existing electrostatic models for a shielded parallel plate capacitor. The minimum fringe field obtained in these experiments was for a 3.18mm diameter probe tip with a dielectric thickness of 0.20mm. The fringe field diameter was 3.38mm at a fly height of 0.60mm, representing an effective probe tip area increase of 13%.

No description available.

No description available.

Thin-film-transistor (TFT) liquid crystal display (LCD) has been widely used in smartphones, pads, laptops, computer monitors, and large screen televisions, just to name a few. A great deal of effort has been delved into wide viewing angle, high resolution, low power consumption, and vivid color. However, relatively slow response time and low transmittance remain as technical challenges. To improve response time, several approaches have been developed, such as low viscosity liquid crystals, overdrive and undershoot voltage schemes, thin cell gap with a high birefringence liquid crystal, and elevated temperature operation. The state-of-the-art gray-to-gray response time of a nematic LC device is about 5 ms, which is still not fast enough to suppress the motion picture image blur. On the other hand, the LCD panel's transmittance is determined by the backlight, polarizers, TFT aperture ratio, LC transmittance, and color filters. Recently, a fringe-field-switching mode using a negative dielectric anisotropy (Δε) LC (n-FFS) has been demonstrated, showing high transmittance (98%), single gamma curve, and cell gap insensitivity. It has potential to replace the commonly used p-FFS (FFS using positive Δε LC) for mobile displays. With the urgent need of submillisecond response time for enabling color sequential displays, polymer-stabilized blue phase liquid crystal (PS-BPLC) has become an increasingly important technology trend for information display and photonic applications. BPLCs exhibit several attractive features, such as reasonably wide temperature range, submillisecond gray-to-gray response time, no need for alignment layer, optically isotropic voltage-off state, and large cell gap tolerance. However, some bottlenecks such as high operation voltage, hysteresis, residual birefringence, and slow charging issue due to the large capacitance, remain to be overcome before their widespread applications can be realized. The material system of PS-BPLC, including nematic LC host, chiral dopant, and polymer network, are discussed in detail. Each component plays an essential role affecting the electro-optic properties and the stability of PS-BPLC. In a PS-BPLC system, in order to lower the operation voltage the host LC usually has a very large dielectric anisotropy (Δε > 100), which is one order of magnitude larger than that of a nematic LC. Such a large Δε not only leads to high viscosity but also results in a large capacitance. High viscosity slows down the device fabrication process and increases device response time. On the other hand, large capacitance causes slow charging time to each pixel and limits the frame rate. To reduce viscosity, we discovered that by adding a small amount (~6%) of diluters, the response time of the PS-BPLC is reduced by 2X-3X while keeping the Kerr constant more or less unchanged. Besides, several advanced PS-BPLC materials and devices have been demonstrated. By using a large Δε BPLC, we have successfully reduced the voltage to <10V while maintaining submillisecond response time. Finally we demonstrated an electric fieldindeced monodomain PS-BPLC, which enables video-rate reflective display with vivid colors. The highly selective reflection in polarization makes it promising for photonics application. Besides displays in the visible spectral region, LC materials are also very useful electro-optic media for near infrared and mid-wavelength infrared (MWIR) devices. However, large absorption has impeded the widespread application in the MWIR region. With delicate molecular design strategy, we balanced the absorption and liquid crystal phase stability, and proposed a fluoro-terphenyl compound with low absorption in both MWIR and near IR regions. This compound serves as an important first example for future development of low-loss MWIR liquid crystals, which would further expand the application of LCs for amplitude and/or phase modulation in MWIR region.

MEMS Sensors are widely used for sensing inertial displacements. The displacements arising out of acceleration /Coriolis effect are typically in the range of 1 nm-1 m. This work investigates the realization of high resolution MEMS inertial sensors using novel displacement sensing mechanisms. Capacitance sensing ASIC is developed as part of conventional electronics interface with MEMS sensor under the conventional CMOS-MEMS integration strategy. The capacitance sense ASIC based on Continuous Time Voltage scheme with coherent and non-coherent demodulation is prototyped on AMS 0.35 m technology. The ASIC was tested to sense C = 3.125 fF over a base of 2 pF using on-chip built-in test capacitors. Dynamic performance of this ASIC was validated by interfacing with a DaCM MEMS accelerometer. 200milli-g of acceleration (equivalent to a C = 2.8 fF) over an input frequency of 20Hz is measurable using the developed ASIC. The observed sensitivity is 90mV/g. The ASIC has several programmable features such as variation in trim capacitance (3.125 fF-12.5 pF), bandwidth selection (500 Hz-20 kHz) and variable gain options (2-100). Capacitance detection, a dominant sensing principle in MEMs sensors, experiences inherent limitation due to the role of parasitics when the displacements of interest are below 5 nm range. The capacitive equivalence ( C) for the range of displacements of the order of 5 nm and below would vary in the range atto-to-zepto farad. Hence there is a need to explore alternative sensing schemes which preferably yield higher sensitivity (than those offered by the conventional integration schemes) and are based on the principle of built-in transduction to help overcome the influence of parasitics on sensitivity. In this regard, 3 non-conventional architectures are explored which fall under the direct integration classification namely: (a) Sub-threshold based sensing (b) Fringe field based sensing and (c) Tunneling current based sensing. a) In Sub-threshold based sensing, FET with a suspended gate is used for displacement sensing. The FET is biased in the sub-threshold region of operation. The exponential modulation of drain current for a change in displacement of 1 nm is evaluated using TCAD, and the in uence of initial air-gap variation on the sensitivity factor ( ID=ID) is brought out. For 1% change in air gap displacement (i.e., TGap/TGap, the gap variation resulting due to the inertial force / mass loading) nearly 1050% change in drain current( ID=ID) is observed (considering initial air gaps of the order 100 nm). This validates the high sensitivity offered by the device in this regime of operation. A comparison of sensitivity estimate using the capacitive equivalence model and TCAD simulated model for different initial air-gaps in a FD-SOI FET is brought out. The influence of FDSOI FET device parameters on sensitivity, namely the variation of TSi, TBox, NA and TGap are explored. CMOS compatibility and fabrication feasibility of this architecture was looked into by resorting to the post processing approach used for validating the sub-threshold bias concept. The IMD layers of the Bulk FETs fabricated through AMS 0.35 technology were etched using BHF and IPA mixture to result in a free standing metal (Al) layers acting as the suspended gate. The performance estimate is carried out considering specific Equivalent Gap Thickness (EGT) of 573 nm and 235 nm, to help overcome the role of coupled electrostatics in influencing the sensitivity metric. The sensitivity observed by biasing this post processed bulk FET in sub-threshold is 114% ( ID=ID change) for a 59% ( d/d change). The equivalent C in this case is 370 aF. b) In Fringe eld based sensing approach, a JunctionLess FET (JLFET) is used as a depletion mode device and an out-of-plane gate displacement would help modulate the device pinch-o voltage due to fringe field coupling. The resulting change in the gate fringe field due to this displacement modulates the drain current of the JunctionLess FET. The displacement induced fringe field change (relative to the FET channel) brings about a distinct shift in the ID-VG characteristics of the JLFET. For displacement d = 2 nm, the JLFET with a channel doping of ND = 8X1018cm 3 and a bias point of VG = -47.7 V, 98% enhancement in sensitivity is observed in 3D TCAD simulations. The equivalent C in this case is 29 zF. The role of ground-planes in the device operation is explored. c) In the tunneling current based sensing approach, the beams fabricated using the SOI-MUMPS process are FIB milled so as to create very ne air gaps of the order of nearly 85 nm. Under high electric fields of the order > 8 MV/cm, the lateral displacement based tunneling sensor offers enhanced change in sensitivity for an induced external force at a fixed DC bias. When integrated as an array with varying electrode overlap, this technique can track displacements over a wide range. With the initial beam overlap as 1.2 m, for a lateral displacement of 1.2 m, a 100% change in sensitivity ( ID=ID) is observed. The effect of fringe field can be completely neglected here unlike its capacitive beam equivalent.