The development of microwave Gallium Arsenide Metal Semiconductor Field Effect Transistor (MESFET) devices has enabled the miniaturization of pagers, cellular phones, and other electronic devices. With these MESFET devices comes the need to model them. This thesis extracts a small signal equivalent circuit model from a Gallium Arsenide MESFET device. The approach taken in this thesis is to use measured S- parameters to extract a small signal equivalent circuit model by optimization. Small signal models and S-parameters are explained. The Simplex Method is used to optimize the small signal equivalent circuit model. A thorough analysis of the strengths and weaknesses of the Simplex method is performed. / Master of Science

An electrical analysis was done on A1 and Au Schottky diodes fabricated on n-type (100) GaAs which had been bombarded with low energy Ar ions. The purpose of this study was to quantify electrically damage caused by the Ion Beam Etching (IBE) as functions of energy and fluence. Electrical studies included Deep Level Transient Spectroscopy (DLTS), Current-Voltage (I-V), Capacitance-Voltage (C-V), ConductanceVoltage (G-V), Capacitance-Temperature (C-T), and Activation Energy Analysis. These electrical measurements were carried out on GaAs which had been exposed to a variety of treatments after IBE (such as chemical etch removal) to determine damage depth. At the lowest energy studied, 0.5keV, Schottky reverse saturation currents (I_sat) increased by over 4 orders of magnitude from the virgin case. The ideality factor, n, increased slightly while the breakdown voltage decreased. The most prominent changes occurred in the DLTS spectrum where it was observed that the native arsenic defect EL2 peak disappeared completely after ion etching. Concurrently a sharp increase in the diode conductivity with temperature was seen. It was found that chemical removal of 100Å of GaAs by chemical means could restore most of the diode parameters and the EL2 peak. It is proposed that the loss of EL2 is not related to a true physical reduction (i.e. an arsenic depletion) since calculations showed that the As loss would have extended beyond 3000Å for detectable DLTS changes. Also, the EL2 peak could be made to artificially disappear on a virgin sample with an external diode shunting resistor. The loss of the EL2 peak is, rather, attributed to a thin low resistivity surface layer having a partly amorphous nonstoichiometric crystal structure which can desensitize or mask the DLTS measurement. Surface chemical etch studies over the top of the Schottky diodes recovered 25% of the EL2 peak supporting this conclusion. Lower fluences had no effect at 0.5keV. Increasing ion bombardment energy showed a steady degradation in diode ideality factors. The reverse breakdown voltage increased past the unetched value and the DLTS spectrum began to show a very slight return of EL2. At 3keV the ideality factor was large, indicating the presence of a somewhat thicker high resistance layer. In fact recovery of diode parameters and EL2 did not occur until after 100Å removal. This was much deeper than expected at this energy, according to theory. Physical and lumped R-C electrical models are reported with an accompanying computer simulation of experimental DLTS results. The simulation used both thin low resistance and thick high resistance top layers to show that EL2 could be removed artificially. The models were also somewhat successful in explaining previously reported capacitance dispersion found in IBE GaAs. / Ph. D.

We present the results of GaInNAs/GaAs quantum dot structures with GaAsN barrier layers grown by solid source molecular beam epitaxy. Extension of the emission wavelength of GaInNAs quantum dots by ~170nm was observed in samples with GaAsN barriers in place of GaAs. However, optimization of the GaAsN barrier layer thickness is necessary to avoid degradation in luminescence intensity and structural property of the GaInNAs dots. Lasers with GaInNAs quantum dots as active layer were fabricated and room-temperature continuous-wave lasing was observed for the first time. Lasing occurs via the ground state at ~1.2μm, with threshold current density of 2.1kA/cm[superscript 2] and maximum output power of 16mW. These results are significantly better than previously reported values for this quantum-dot system. / Singapore-MIT Alliance (SMA)

Orientador: Maria José Santos Pompeu Brasil / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física "Gleb Wataghin" / Made available in DSpace on 2018-08-17T05:37:13Z (GMT). No. of bitstreams: 1 GonzalezBalanta_MiguelAngel_M.pdf: 3522641 bytes, checksum: 4f38baba120bb574a54a03d7c1ebc335 (MD5) Previous issue date: 2010 / Resumo: Nesta dissertação investigamos os efeitos dos íons de Mn na dinâmica do spin de elétron em poços quânticos de InGaAs/GaAs. Os poços têm um gás de buracos gerado por dopagens em suas barreiras, sendo uma dopagem tipo delta de Mn numa das barreiras e uma dopagem tipo delta de C, na outra. A densidade de buracos foi determinada mediante medidas de transporte e são consistentes com as densidades obtidas das energias de Stokeshift. Utilizamos diversas técnicas ópticas, como a fotoluminescência no modo contínuo (PL-CW) e resolvida no tempo (PL-RT), a fotoluminescência de excitação (PLE-CW), e o efeito Hanle óptico, sempre usando luz circularmente polarizada para excitação e analisando a polarização circular da luz emitida. Comparamos os tempos de vida ( ? ) e de relaxação do spin ( ? s) dos elétrons obtidos através destas técnicas e discutimos as diferenças intrínsecas destes métodos e o significado físico dos parâmetros fornecidos por eles. Analisamos também o efeito da presença dos íons de Mn, que são íons magnéticos, sobre os tempos vida e de spin dos elétrons em uma série de amostras com diferentes quantidades de Mn incluindo a amostra de referencia sem Mn. Os resultados encontrados revelam um limite para a concentração de Mn, para a qual ambos, ? e ? s, apresentam uma queda abruta. Surpreendentemente, esta queda não afeita o grau de polarização CW, pois a razão ?/? s que determina este parâmetro permanece basicamente constante para todas as amostras / Abstract: We have studied the effect of Mn ions on the spin-relaxation of electrons in a InGaAs/GaAs quantum well (QW). The QW has a two-dimensional hole-gas generated by doping the barriers, whereas one of the barriers has a Mn-planar layer and the other one, a C planarlayer. The hole densities were determined by Shubnikov-de-Haas oscillations and are consistent with the Stokes-shift energies obtained by optical measurements. We have performed continuouswave photoluminescence measurements (CW-PL), excitation photoluminescence (CW-PLE), timeresolved (TR-PL), and Hanle effect with circularly polarized excitation and detection. We compare the lifetime ( ? ) and the spin relaxation time ( ? s) obtained using those techniques and we discuss the differences between the various techniques and the physical meaning of those parameters. We also analyze the effect of Mn ions on ? s and ? for the series of samples with different Mn concentrations, including a reference sample with no Mn doping. The results revealed a threshold of Mn concentration at which both, and ? s, show a strong and abrupt fall. Surprisingly, this fall does not affect the CW effective polarization degree, since the ratio s that determines this parameter remains basically constant for all samples / Mestrado / Física da Matéria Condensada / Mestre em Física

No description available.

The fundamental components for processing all-optically represented data, namely optical switches and logic gates are investigated. Improved techniques for fabricating nonlinear Fabry-Perot etalons containing GaAs have brought a proliferation of GaAs optical bistable devices. These devices show significant improvements in speed, power requirements, operating temperature and thermal stability. Experiments verify predictions that one can operate a single nonlinear etalon as optical logic gates or two such etalons as a flip-flop. Optimization of the logic gates is then discussed from a systems approach.

Cette thèse s’inscrit dans le cadre d’une cotutelle internationale entre l’institut FEMTO-ST à Besançon en France et l’université de Sherbrooke au Canada. Elle porte sur l’élaboration d’un biocapteur, potentiellement à bas coût, pour la détection de pathogènes dans les secteurs de l’agroalimentaire, de l’environnement et de la biosécurité. Le modèle biologique visé est la bactérie Escherichia coli, dont les souches pathogènes sont responsables, chaque année et partout dans le monde, de plusieurs crises sanitaires liées à une mauvaise gestion des produits de consommation ou des installations de conditionnement ou de traitements de ces produits. L’utilisation de biocapteurs pour une détection rapide, sensible et sélective d’organismes pathogènes répond ainsi aux inquiétudes quant aux risques d’infection pour la population. La structure du capteur consiste en une fine membrane en arséniure de gallium (GaAs) vibrant sur des modes de cisaillement d’épaisseur générés par champ électrique latéral via les propriétés piézoélectriques du matériau. Nous montrons dans ce travail que le biocapteur offre également des possibilités de microfabrication, de biofonctionnalisation et de régénération intéressantes pour la conception d’un dispositif à bas coût. Le transducteur a été réalisé via des technologies de microfabrication utilisées en salle blanche avec une mise en parallèle des méthodes d’usinage par voie chimique et par plasma, l’objectif étant d’obtenir des membranes minces, planes et avec un état de surface de haute qualité. Une interface fluidique a été mise au point de façon à approvisionner de manière homogène le capteur en fluide. Par ailleurs, nos études se sont portées sur la fonctionnalisation biochimique de l’interface de bioreconnaissance sur l’arséniure de gallium et sa caractérisation fine par les techniques de spectroscopie infrarouge à transformée de Fourier (FTIR). Les résultats de cette étude ont permis de progresser sur la compréhension fondamentale du phénomène d’auto-assemblage de molécules sur GaAs. Un effort particulier a été mis en œuvre pour développer des biointerfaces de haute densité offrant une immobilisation optimale des immunorécepteurs biologiques. Parmi les différentes méthodes de régénération de la biointerface, le procédé de photo-oxydation UV en milieu liquide a démontré un fort potentiel pour des applications de capteurs réutilisables. Enfin, le transducteur a été caractérisé électriquement sous différents environnements. L’impact sur la réponse du résonateur des paramètres électriques, mécaniques et thermiques de ces milieux a été évalué afin de simuler le comportement du dispositif en condition réelle. / Abstract : This PhD thesis was realized in the context of a cotutelle program between FEMTO-ST institute in France and the University of Sherbrooke in Canada. The thesis addresses the development of a potentially low cost sensor dedicated for detection of pathogens in food industry processing, environment and biosafety sectors. Such a sensor could serve detection of Escherichia coli bacteria whose pathogenic strains are the source of foodborne illnesses encountered worldwide every year. Hence, biosensor devices are needed for a rapid, sensitive and selective detection of pathogens to avert, as soon as possible, any sources of contamination and prevent outbreak risks. The design of the sensor consists of a resonant membrane fabricated in gallium arsenide (GaAs) crystal that operates at shear modes of bulk acoustic waves generated by lateral field excitation. In addition to the attractive piezoelectric properties, as shown in this work, fabrication of a GaAs-based biosensor benefits from a well-developed technology of microfabrication of GaAs, as well as biofunctionalization and the possibility of regeneration that should result in cost savings of used devices. The transducer element was fabricated by using typical clean room microfabrication techniques. Plasma and wet etching were investigated and compared for achieving thin membranes with high quality surface morphology. At the same time, we designed and fabricated fluidic elements that allowed the construction of a flow cell chamber integrated in the sensor. Extensive research was carried out with a Fourier transform infrared spectroscopy (FTIR) diagnostic tool to determine optimum conditions for biofunctionalization of the GaAs surface. This activity allowed to advance the fundamental knowledge of self-assembly formation and, consequently, fabrication of high density biointerfaces for efficient immobilization of selected bioreceptors. Among different biochip regeneration methods, it has been demonstrated that liquid UV photooxidation (liquid-UVPO) has a great potential to deliver attractive surfaces for re-usable biochips. Finally, operation of the transducer device was evaluated in air environment and in various liquid media, simulating real conditions for detection.

A compact optical terahertz (THz) source was demonstrated based on an efficient high-repetition-rate doubly resonant optical parametric oscillator (OPO) around 2 mu m with two type-II phase-matched KTP crystals in the walk-off compensated configuration. The KTP OPO was intracavity pumped by an acousto-optical (AO) Q-switched Nd:YVO4 laser and emitted two tunable wavelengths near degeneracy. The tuning range extended continuously from 2.068 mu m to 2.191 mu m with a maximum output power of 3.29 W at 24 kHz, corresponding to an optical-optical conversion efficiency (from 808 nm to 2 mu m) of 20.69%. The stable pulsed dual-wavelength operation provided an ideal pump source for generating terahertz wave of micro-watt level by the difference frequency generation (DFG) method. A 7.84-mm-long periodically inverted quasi-phase-matched (QPM) GaAs crystal with 6 periods was used to generate a terahertz wave, the maximum voltage of 180 mV at 1.244 THz was acquired by a 4.2-K Si bolometer, corresponding to average output power of 0.6 mu W and DFG conversion efficiency of 4.32x10(-7). The acceptance bandwidth was found to be larger than 0.35 THz (FWHM). As to the 15-mm-long GaSe crystal used in the type-II collinear DFG, a tunable THz source ranging from 0.503 THz to 3.63 THz with the maximum output voltage of 268 mV at 1.65 THz had been achieved, and the corresponding average output power and DFG conversion efficiency were 0.9 mu W and 5.86x10(-7) respectively. This provides a potential practical palm-top tunable THz sources for portable applications.

Call number: LD2668 .T4 1986 Y36 / Master of Science / Physics

by Chan Lai Yin Simon. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1995. / Includes bibliographical references. / Chapter Chapter 1: --- Introduction / Chapter 1.1 --- Background --- p.1-2 / Chapter 1.2 --- Properties of the InGaAsP quaternary alloy on InP substrate --- p.2 / Chapter 1.2.1 --- Physical Properties of In1-xGaxASyP1-y on InP substrate --- p.3-4 / Chapter 1.2.2 --- Optical Properties of In1-xGaxASyP1-y on InP substrate --- p.4-7 / Chapter 1.2.3 --- Nonlinear Optical Property of InGaAsP --- p.7-9 / Chapter 1.3 --- Fabrication of InGaAsP/InP rib waveguide / Chapter 1.3.1 --- Epitaxial Growth of In1-xGaxASyP1-y on InP substrate by MOCVD --- p.9 / Chapter 1.3.2 --- Etching of the five layer In1-xGaxASyP1-y slab waveguide --- p.9-12 / Chapter 1.4 --- Overview of the thesis --- p.12-13 / References --- p.13-15 / Chapter Chapter 2: --- Modal analysis of the single mode III-V semiconductor waveguidesin multi-layer rib structure by Effective Index Method / Chapter 2.1 --- Introduction --- p.16-17 / Chapter 2.2 --- Modal analysis of the rib waveguides --- p.17-27 / Chapter 2.3 --- Optical Confinement in rib waveguide --- p.28-30 / Chapter 2.4 --- Conclusions and discussions --- p.30-31 / References --- p.31-33 / Chapter Chapter 3: --- Ultrashort Pulsewidth Measurement Part I / Chapter 3.1 --- Introduction --- p.34 / Chapter 3.2 --- Pulsewidth measurement by streak camera --- p.34-37 / Chapter 3.3 --- Pulsewidth measurement by nonlinear autocorrelation --- p.37-40 / Chapter 3.3.1 --- Second Harmonic Generation Autocorrelator --- p.40-43 / Chapter 3.3.2 --- Two Photon Fluorescence Autocorrelator --- p.43-44 / Chapter 3.4 --- Two Photon Absorption Waveguide Autocorrelator --- p.45 / Chapter 3.4.1 --- TPA theory --- p.45-48 / Chapter 3.4.2 --- Autocorrelation Measurement by TPA in InGaAsP Waveguide --- p.48-51 / Chapter 3.4.3 --- The Estimated performance of the TPA Waveguide Autocorrelator --- p.52 / References --- p.52-57 / Chapter Chapter 4: --- Ultrashort Pulsewidth Measurement Part II: High Sensitivity Two Photon Absorption InGaAsP Waveguide Autocorrelator for Low Power Pulsewidth Measurement of 1.55μm Waveguide Pulses / Chapter 4.1 --- Introduction --- p.58-60 / Chapter 4.2 --- Waveguide structures --- p.60 / Chapter 4.3 --- Practical Implementation of the TPA Waveguide Autocorrelator / Chapter 4.3.1 --- Mirror arrangement for the delay system --- p.61 -63 / Chapter 4.3.2 --- Alignment and Coupling of the InGaAsP/InP Waveguide --- p.63-64 / Chapter 4.3.3 --- TPA photocurrent detection --- p.64-65 / Chapter 4.4 --- Experimental results --- p.65-67 / Chapter 4.4.1 --- Pulsewidth measurement of the TPA InGaAsP waveguide autocorrelator --- p.67-71 / Chapter 4.4.2 --- Spectral analysis by the TPA InGaAsP waveguide autocorrelator --- p.71 -73 / Chapter 4.5 --- Conclusions and discussions --- p.73-75 / References --- p.75-78 / Chapter Chapter 5: --- Picosecond Pulses Generation by Colliding-Pulse Mode-locking of a Fabry-Perot Laser Diode with an Intra-cavity Gradual Degradation Defect / Chapter 5.1 --- Introduction --- p.79-80 / Chapter 5.2 --- Gain-switching --- p.80-84 / Chapter 5.3 --- Colliding Pulse Mode-locking --- p.84-85 / Chapter 5.3.1 --- Degradation of diode laser --- p.85-86 / Chapter 5.3.2 --- CPM Theory --- p.86-89 / Chapter 5.3.3 --- Experimental results --- p.89-92 / Chapter 5.4 --- Conclusions and discussions --- p.92-93 / References --- p.94-98 / Chapter Chapter 6: --- Conclusions / Chapter 6.1 --- Summary of the Research / Chapter 6.1.1 --- Theoretical Results --- p.99-100 / Chapter 6.1.2 --- Experimental Results --- p.101-104 / Chapter 6.2 --- Future Development / Chapter 6.2.1 --- Improvement of the TPA InGaAsP waveguide autocorrelator --- p.105 / Chapter 6.2.2 --- Future development of III-V semiconductor waveguides --- p.105-107 / References --- p.107-108 / Appendix --- p.109-121