Spelling suggestions: "subject:"gallium arsenide semiconductors"" "subject:"gallium arsenide ⅴsemiconductors""
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GaAs MESFET Photodetectors for imaging arrays / by Derek Abbott.Abbott, Derek January 1995 (has links)
Bibliography: p. 269-276. / xxx, 306 p. : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / The main objective of this thesis is to create a significant advance in the area of solid-state imaging via the research of an image sensor that can be ultimately integrated with high-speed gallium arsenide (GaAs) processing circuitry on a common substrate chip. / Thesis (Ph.D.)--University of Adelaide, Dept. of Electrical and Electronic Engineering, 1997
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Design of a very high speed dynamic RAM in gallium arsenide for an ATM switch / Michael K. McGeever.McGeever, Michael K. January 1995 (has links)
Bibliography: leaves 156-165. / xvi, 174 leaves : ill. ; 30 cm. / Title page, contents and abstract only. The complete thesis in print form is available from the University Library. / This thesis analyses the design of a Dynamic RAM in gallium arsenide for use as a buffer in an ATM switch. The causes of leakage are investigated and methods to overcome or compensate the leakage are devised, resulting in a memory cell with a large storage time, high speed and low power dissipation. A 14 kbit RAM array is designed and laid out in gallium arsenide. The RAM array is designed to operate over a -25oC to +125oC temperature range using process parameters which vary by up to 2 [sigma] from typical. / Thesis (M.Eng.Sc.)--University of Adelaide, Dept. of Electrical & Electronic Engineering, 1996?
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Bismuth surfactant effects for GaAsN and beryllium doping of GaAsN growth by molecular beam epitaxyLiu, Ting, January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2007. / Title from document title page. Document formatted into pages; contains xv, 145 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 138-145).
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Characterization and modeling of strained layers grown on V-grooved substrates /Gupta, Archana. January 1997 (has links)
Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references. Also available via World Wide Web.
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Atomic hydrogen-assisted epitaxy for the reduction of composition modulation in InGaAsP /LaPierre, Ray R. January 1997 (has links)
Thesis (Ph.D.) -- McMaster University, 1997. / Includes bibliographical references (leaves [100]-105. Also available via World Wide Web.
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Power and spectral characterization of InGaAsP-InP multi-quantum well lasers /Prosyk, Kelvin. January 1998 (has links)
Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references. Also available via World Wide Web.
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Diffusion studies in InGaAs/GaAs and AIGaAs/GaAs quantum well structures /Ramanujachar, Kartik. January 1998 (has links)
Thesis (Ph.D.) -- McMaster University, 1998. / Includes bibliographical references (leaves 185-191). Also available via World Wide Web.
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Strain relaxation and related phenomena in GaNAs and GaP films on GaAs substratesLi, Yan. Weatherly, G.C. January 2005 (has links)
Thesis (Ph.D.)--McMaster University, 2005. / Supervisor: G.C. Weatherly and M. Niewczas. Includes bibliographical references (leaves 171-177).
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Growth-related phenomena in MBE films of InGaAsP on InP substrates.Okada, Tatsuya. Weatherly, G.C. Unknown Date (has links)
Thesis (Ph.D.)--McMaster University (Canada), 1996. / Source: Dissertation Abstracts International, Volume: 58-06, Section: B, page: 3263. Adviser: G. C. Weatherly.
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Modeling of the dual-gate GaAs MESFET /Ibrahim, Mostafa M. January 1900 (has links)
Thesis (Ph. D.)--Carleton University, 2003. / Includes bibliographical references (p. 162-169). Also available in electronic format on the Internet.
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