Thesis (PhD)--Macquarie University, School of Mathematics, Physics, Computing and Electronics, 1999. / "1998"--T.p. Includes bibliographical references.

Thesis (Ph. D.)--University of California, Riverside, 2009. / Includes abstract. Includes bibliographical references (leaves 121-123). Issued in print and online. Available via ProQuest Digital Dissertations.

Thesis (Ph. D.)--University of Texas at Austin, 2008. / Vita. Includes bibliographical references.

Thesis (Ph. D.)--University of Texas at Austin, 2004. / Supervisor: Ray T. Chen. Vita. Includes bibliographical references.

This study focuses on the development of InAs/GaInSb strained-layer superlattice structures by metal organic chemical vapour deposition (MOCVD), and deals with two aspects of the development of InAs/GaInSb SLS’s by MOCVD viz. the deposition of nano-scale (~100 Å) GaInSb layers, and the electrical characterization of unstrained InAs. The first part of this work aims to study the MOCVD growth of GaInSb layers in terms of deposition rate and indium incorporation on the nano-scale. This task is approached by first optimizing the growth of relatively thick (~2 μm) epitaxial films, and then assuming similar growth parameters during nano-scale deposition. The GaInSb layers were grown as part of GaInSb/GaSb quantum well (QW) structures. By using this approach, the GaInSb QW’s (~100 Å) could be characterized with the use of photoluminescence spectroscopy, which, when used in conjunction with transmission electron microscopy and/or X-ray diffractomery, proves useful in the analysis of such small scale deposition. It is shown that the growth rate of GaInSb on the nano-scale approaches the nominal growth rates determined from thick (~2 μm) GaInSb calibration layers. The In incorporation efficiency in nano-layers, however, was markedly lower than what was predicted by the GaInSb calibration layers. This reduction in indium incorporation could be the result of the effects of strain on In incorporation. The choice of substrate orientation for QW deposition was also studied. QW structures were grown simultaneously on both (100) and 2°off (100) GaSb(Te) substrates, and it is shown that growth on non-vicinal substrates is more conducive to the deposition of high quality QW structures. The second part of this study focuses on the electrical characterization of unstrained InAs. It is long known that conventional Hall measurements cannot be used to accurately characterize InAs epitaxial layers, as a result of parallel conduction resulting from surface and/or interface effects. This study looks at extracting the surface and bulk electrical properties of n-type InAs thin films directly from variable magnetic field Hall measurements. For p-type InAs, the situation is complicated by the relatively large electron to hole mobility ratio of InAs which tends to conceal the p-type nature of InAs thin films from Hall measurements. Here, this effect is illustrated by way of theoretical simulation of Hall data.

The importance of infrared (IR) technology (for detection in the 3-5 μm and 8-14 μm atmospheric windows) has spread from military applications to civilian applications since World War II. The commercial IR detector market in these wavelength ranges is dominated by mercury cadmium telluride (MCT) alloys. The use of these alloys has, however, been faced with technological difficulties. One of the materials that have been tipped to be suitable to replace MCT is InAs/InxGa1-xSb strained layer superlattices (SLS’s). Atmospheric pressure metal-organic vapour phase epitaxy (MOVPE) has been used to grow InAs/GaSb strained layer superlattices (SLS’s) at 510 °C in this study. This is a starting point towards the development of MOVPE InAs/InxGa1-xSb SLS’s using the same system. Before the SLS’s could be attempted, the growth parameters for GaSb were optimised. Growth parameters for InAs were taken from reports on previous studies conducted using the same reactor. Initially, trimethylgallium, a source that has been used extensively in the same growth system for the growth of GaSb and InxGa1-xSb was intended to be used for gallium species. The high growth rates yielded by this source were too large for the growth of SLS structures, however. Thus, triethylgallium (rarely used for atmospheric pressure MOVPE) was utilized. GaSb layers (between 1 and 2 μm thick) were grown at two different temperatures (550 °C and 510 °C) with a varying V/III ratio. A V/III ratio of 1.5 was found to be optimal at 550 °C. However, the low incorporation efficiency of indium into GaSb at this temperature was inadequate to obtain InxGa1-xSb with an indium mole fraction (x) of around 0.3, which had previously been reported to be optimal for the performance of InAs/InxGa1-xSb SLS’s, due to the maximum splitting of the valence mini bands for this composition. The growth temperature was thus lowered to 510 °C. This resulted in an increase in the optimum V/III ratio to 1.75 for GaSb and yielded much higher incorporation efficiencies of indium in InxGa1-xSb. However, this lower growth temperature also produced poorer surface morphologies for both the binary and ternary layers, due to the reduced surface diffusion of the adsorbed species. An interface control study during the growth of InAs/GaSb SLS’s was subsequently conducted, by investigating the influence of different gas switching sequences on the interface type and quality. It was noted that the growth of SLS’s without any growth interruptions at the interfaces leads to tensile strained SLS’s (GaAs-like interfaces) with a rather large lattice mismatch. A 5 second flow of TMSb over the InAs surface and a flow of H2 over GaSb surface yielded compressively strained SLS’s. Flowing TMIn for 1 second and following by a flow of TMSb for 4 seconds over the GaSb surface, while flowing H2 for 5 seconds over the InAs surface, resulted in SLS’s with GaAs-like interfacial layers and a reduced lattice mismatch. Temperature gradients across the surface of the susceptor led to SLS’s with different structural quality. High resolution x-ray diffraction (HRXRD) was used to determine the thicknesses as well as the type of interfacial layers. The physical parameters of the SLS’s obtained from simulating the HRXRD spectra were comparable to the parameters obtained from cross sectional transmission electron microscopy (XTEM) images. The thicknesses of the layers and the interface type played a major role in determining the cut-off wavelength of the SLS’s.

Gallium arsenide MESFETS require protective passivation at several steps in their fabrication. A common film used for device passivation is silicon nitride. This passivation film is deposited on gallium arsenide substrates by chemical vapor deposition techniques and possesses high intrinsic stress. The stresses arise from the difference in the gallium arsenide and silicon nitride material properties, such as coefficient of expansion, density, modulus, and deposition temperature. The stress has been shown to cause electrical performance shifts in GaAs MESFET structures due to the piezoelectric nature of the gallium arsenide lattice. This work develops a framework of mathematical models and experimental techniques by which the intrinsic stresses in the film and the GaAs substrate can be evaluated. Specifically, this work details the stress field and the electrical performance shifts in fully planarized self aligned gate GaAs MESFETS. The devices were 10 micron gate periphery FET devices with a 0.4 micron etched gate length. The test devices included both enhancement mode and depletion mode structures. The major contributors to the stress in GaAs devices was found to be the intrinsic stress effects of the silicon nitride passivation film. An externally applied stress, such as that applied to a package base that a typical GaAs device would be mounted into for actual service, was found to be insufficient to cause significant shifts in the device performance. The package body effectively reduces the transfer of stress to the device body and thereby minimizes the piezoelectric effect. The intrinsic stress effects are due to the deposition of the film itself. This intrinsic stress was found to have a significant effect on the device electrical characteristics. The stress was found to permanently shift the threshold voltage and current in 10 micron self aligned gate MESFETS. The shift was measured at 26 millivolts per 100 MPa film stress for depletion mode devices and 23 millivolts per 100 MPa for enhancement mode devices. For the maximum measured biaxial stress of -0.54 MPa in the gallium arsenide, the total measured shift was 140 millivolts. The level of shift is similar to that reported by earlier researchers. This piezoelectric shift has been modeled, with model predictions within 50/0 of the experimental values for the DFET devices and 11 % for the EFET devices. / Ph. D.

A new optimization technique for SPICE modeling parameters has been developed in this dissertation to increase the accuracy of the circuit simulation. The importance of having accurate circuit simulation models is to prevent the very costly redesign of an Integrated Circuit (IC). This radically new optimization technique utilizes the Taguchi method to improve the fit between measured and simulated I-V curves for GaAs MESFETs. The Taguchi method consists of developing a Signal-to-Noise Ratio (SNR) equation that will find the optimum combination of controllable signal levels in a design or process to make it robust or as insensitive to noise as possible. In this dissertation, the control factors are considered the circuit model curve fitting parameters and the noise is considered the variation in the simulated I-V curves from the measured I-V curves. This is the first known application of the Taguchi method to the optimization of IC curve fitting model parameters. In addition, this method is not technology or device dependent and can be applied to silicon devices as well. Improvements in the accuracy of the simulated I-V curve fit reaching 80% has been achieved between DC test extracted parameters and the Taguchi optimized parameters. Moreover, the computer CPU execution time of the optimization process is 96% less than a commercial optimizer utilizing the Levenberg-Marquardt algorithm (optimizing 31 FETs). This technique does a least square fit on the data comparing measured currents versus simulated currents for various combinations of SPICE parameters. The mean and standard deviation of this least squares fit is incorporated in determining the SNR, providing the best combination of parameters within the evaluated range. Furthermore, the optimum values of the parameters are found without additional simulation by fitting the response curves to a quadratic equation and finding the local maximum. This technique can easily be implemented with any simulator that utilizes simulation modeling parameters extracted from measured DC test data. In addition, two methods are evaluated to obtain the worst case modeling parameters. One method lobks at the correlation coefficients between modeling parameters and the second looks at the actual device parameters that define the +/- 3σ limits of the process. Lastly, an example is given that describes the applicability of the Taguchi methodology in the design of a differential amplifier, that accounts for the effect of offset voltage. / Ph. D.

N-type GaAs is a potentially useful semiconductor in liquid junction type solar cells. Corrosion and corrosion suppression on an n-type GaAs semiconductor in both light and dark has been studied. The application of non-electroactive layers for corrosion suppression on semiconductor electrodes is a relatively new field. GaAs corrodes to form Ga(III) and As(III) solution species during photocurrent generation. The corrosion rate is determined electroanalytically in acidic media by measuring As(III) using differential pulse polarography (DPP). In neutral electrolytes a rotating ring-disc experiment measured the efficiency of hole-transfer to a redox couple. Two protecting processes have been utilized. Silanization and electrochemical polymerization of divinylbenzene and phenol were used to deposit non-electroactive layers on the electrode surface. The polyphenylene oxide coating partially suppressed corrosion in acid electrolytes. However, the coatings did not improve hole transfer efficiency in neutral electrolytes. / Master of Science

Extensive Raman-scattering studies have been performed in order to study the structure of ion-implanted GaAs, prior to any anneal. The spectroscopic evidence is consistent with a fine-scale mixture of amorphous and microcrystalline GaAs. Excessive bombardment with 120-keV SiF₃⁺ ions results in a 500-A thick surface layer which is completely amorphous (a-GaAs). A detailed chemical-etch damage depth profile has been completed for 45-keV Be⁺-implanted GaAs, which is not completely amorphized. The damage is characterized using the microcrystalline longitudinal-optical (LO) phonon frequency, line width, and intensity, and the intensity of the a-GaAs component of the Raman spectrum. The damage layer possesses a 1500-A thick surface layer of constant, high damage. This high-damage plateau is followed by a transition region in which the damage level smoothly decreases until the undisturbed crystal is reached near 4000 A. LO intensities were analyzed, within the amorphous/crystalline mixed-phase model, to obtain the volume fractions of the two components. Consistent estimates of the optical absorption in the high-damage plateau were obtained via two independent means. Resonance-Raman experiments were carried out, using laser lines between 1.5 and 2.71 eV. The intensity of the a-GaAs spectral component was found to depend on scattering volume (optical penetration), thus providing an internal intensity standard allowing the effects of scattering volume and scattering efficiencies to be separated. The LO phonon was found to resonate approaching the E₁ electronic transition at 2.9 eV. The strength of the resonance decreases with smaller crystallite size. A new Raman band was observed near 47 cm⁻¹ for photon energies below 2 eV. It resonates at 1.7 eV, near E₀ and not near E₁. I propose that this new feature arises from GaAs acoustic modes made Raman active by defectassisted scattering involving the crystalline/amorphous interface regions. A quantitative analysis is developed, with some success. Intensities of silicon local are observed to remain constant upon annealing, although conductivity increases by several orders of magnitude. The anneal primarily restores the mobility to that of crystalline GaAs. / Ph. D.