Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.

No description available.

No description available.

Thesis (M.S.)--Oregon Graduate Center, 1988.

Thesis (Ph. D.)--Lehigh University, 1998. / Includes vita. Includes bibliographical references (leaves 56-61).

Thesis (Ph. D.)--Virginia Polytechnic Institute and State University, 1991. / Vita. Abstract. Includes bibliographical references (leaves 208-216). Also available via the Internet.

Thesis (M.S.)--University of Wisconsin--Madison, 1970. / eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Thesis (Ph. D.)--Georgia State University, 2006. / Title from title screen. Unil Perera, committee chair; Donald Edwards, Gennady Cymbaluyk, Mark Stockman, Nikolaus Dietz, Paul Wiita, committee members. Electronic text (348, 24-32 p. : ill.) : digital, PDF file. Description based on contents viewed June 8, 2007. Includes bibliographical references (p. 24-30, second sequence).

No description available.

Since the development of the transistor in the Bell Telephone Laboratories in 1948 [78], the semiconductor industry has transformed the world we live in. It is difficult to picture a world without the modern day cutting edge technology. Imagine performing every day functions without “trivial” devices such as computers, cell phones or microwave ovens. The ability to tailor the band gaps of various binary, ternary and quaternary semiconductor systems has opened up a whole new spectrum of potential purpose designed devices [27]. This thesis focuses on the electronic properties of gallium (III) antimonide (V). The antimonides, in general, have the smallest band gap and highest electron mobility of the III-V compound semiconductors and are well suited for long wavelength emission and detection as well as high frequency switching device applications. Furthermore, III-V ternaries and quaternaries, such as (AlGaIn)(AsSb), lattice matched to gallium antimonide (GaSb) are considered serious competitors for HgCdTe and PbSe in long-wavelength infrared (LWIR) and very long-wavelength infrared (VLWIR) technology [4, 10, 11]. Epitaxial material systems based on GaSb are suitable for a wide range of applications such as missile and surveillance systems and a host of other military and civil applications. In addition, an assortment of devices on InAs, GaSb, and AlSb, including resonant tunnelling devices, infrared detectors and mid-infrared semiconductor lasers have been demonstrated [14, 15]. Furthermore, antimonide based devices could potentially reduce optical fibre power loss by a few orders of magnitude, as their implementation can lead to use of non-silica based optical fibres that minimise Raleigh scatter related power loss [8]. GaSb related technology faces a number of challenges. A significant amount of effort is required to exploit the potential it offers. GaSb oxidises readily in the ambient, resulting in the formation of a native oxide layer as well as deposits of elemental antimony (Sb) at the oxide/substrate interface therefore it has poor surface electronic properties resulting from high surface state densities[4, 17, 18]. As grown GaSb is characterised by a high density of surface states of which many are classified as non-radiative (Auger) recombination centres. The elemental Sb layer constitutes an unwanted conduction path parallel to the active surface region [17]. The potential that GaSb and GaSb-based strained layer superlattices offer as successors to the current generation of LWIR and VLWIR optoelectronic materials has therefore been largely impeded [4]. Furthermore, processing steps in device fabrication leads to an unintentionally damaged GaSb surface exacerbating the situation. Any efforts to engineer devices of superior quality on GaSb have to address these and more material specific problems [19]. This study attempts to contribute towards an improved understanding of the structural and electrical properties of the near surface region of Te-doped bulk (100) and MOVPE grown epitaxial Te doped n- GaSb. The main focus of this study is to develop means to de-oxidise and stabilize the highly reactive GaSb surface and to develop diode structures to demonstrate the improved interface characteristics and use related current–voltage (I-V) measurements to quantify the surface state density before and after treatment. These devices were also used to probe the near surface region for electrically active deep level defects that often act as non-radiative recombination centers. Au, Pd and Al were used as metals to establish a metal semiconductor barrier and subsequent depletion region. Sulphur based chemicals, ([(NH4)2S / (NH4)2SO4] + S), not previously reported for the treatment of (100) n-GaSb surfaces, and the commonly used passivants Na2S:9H2O and (NH4)2S were compared by assessing the electrical and structural properties both before and after treatment. The effect of treatment on the electrical response of the material was determined using current-voltage, capacitance-voltage (C-V) and deep level transient spectroscopy (DLTS) measurements, while the surface morphology and composition were studied by SEM, AES and XPS.