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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
131

A picosecond photoluminescence and electrochemical study of the n-GaAs/elctrolyte interface in a nonaqueous photoelectrochemical cell /

Abshere, Travis Arthur, January 2000 (has links)
Thesis (Ph. D.)--University of Oregon, 2000. / Typescript. Includes vita and abstract. Includes bibliographical references (leaves 122-126). Also available for download via the World Wide Web; free to University of Oregon users.
132

Noise characterization and modeling of InP/InGaAs HBTs for RF circuit design /

Huber, Alex, January 2000 (has links)
Originally presented as the author's thesis (Swiss Federal Institute of Technology), Diss. ETH No. 13547. / Summary in German and English. Includes bibliographical references.
133

Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method

Tsia, Man, Juliana. January 2000 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2001. / Includes bibliographical references.
134

GaAs-based long-wavelength quantum dot lasers /

Park, Gyoungwon, January 2001 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references (leaves 89-95). Available also in a digital version from Dissertation Abstracts.
135

Molecular beam epitaxy of gallium indium nitride arsenide for optoelectronic devices /

Gotthold, David William, January 2000 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 100-110). Available also in a digital version from Dissertation Abstracts.
136

Time-resolved photocurrent and photoluminescence spectra of GaInP/GaAs single-junction photovoltaic devices

Liu, Fang, 刘方 January 2015 (has links)
A pulse-laser based time-resolved photocurrent (TRPC) and photoluminescence (TRPL) system with a programmable Boxcar integrator/averager system incorporated was implemented to investigate the optical properties and charge carrier dynamics in a GaInP/GaAs single-junction photovoltaic device for the purposes of understanding fundamental optoelectronic processes in the solar cell. The implementation of whole system was realized by integrating the instrument of a Boxcar averager system with a pulse laser source + spectroscopic facilities. The delay time control and data acquisition were organized by the software code. The effects of the hardware configurations and the software parameters on the performance of the system were particularly addressed for the optimization of measurement conditions and precisions. Two main functions of TRPC and TRPL with a wide time range were demonstrated for the system. The system was employed to measure temperature- and bias voltages-dependent TRPC and TRPL spectra of a GaInP/GaAs single-junction photovoltaic device. The spectral data show a lot of information about the transient dynamic behaviors of photogenerated charge carriers in the device, including both the rise and decay processes. Interestingly, the measured time-resolved photocurrent curves are characterized by a fast rising edge followed by a relatively slow decay process as the temperature increases. Relevant theoretical calculations and analysis to the experimental curves were also carried out to understand diffusion and transport processes of charge carriers inside the device. The results show that the variation in temperature and reverse biases results in the structural change in the space charge region of the P-N junction and therefore affects the rise and decay time constants of the time-resolved photocurrent. The TRPL spectral data give information of mid-way radiative recombination of charge carriers in the device. / published_or_final_version / Physics / Master / Master of Philosophy
137

Theoretical study of GaAs-based quantum dot lasers and microcavity light emitting diodes

Huang, Hua 28 August 2008 (has links)
Not available / text
138

Study of GaAs as a possible field assisted positron moderator

沈躍躍, Shan, Yueyue. January 1994 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
139

Positron deep level transient spectroscopy in semi-insulating GaAs using the positron velocity transient method

謝敏, Tsia, Man, Juliana. January 2000 (has links)
published_or_final_version / Physics / Master / Master of Philosophy
140

A study of GaAs and CdZnTe by positron annihilation spectroscopy

Shan, Yueyue., 沈躍躍. January 1997 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy

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