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Reliability study of enhancement-mode AIGaN/GaN HEMT fabricated with fluorine plasma treatment technology /Yi, Congwen. January 2008 (has links)
Thesis (M.Phil.)--Hong Kong University of Science and Technology, 2008. / Includes bibliographical references (leaves 76-87). Also available in electronic version.
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Wide band gap nanomaterials and their applicationsZhang, Shaolin, January 2009 (has links)
Thesis (M. Phil.)--University of Hong Kong, 2009. / Includes bibliographical references (p. 69-71). Also available in print.
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Understanding the impact of bulk traps on GaN HEMT DC and RF characteristicsKalavagunta, Aditya. January 2009 (has links)
Thesis (Ph. D. in Electrical Engineering)--Vanderbilt University, May 2009. / Title from title screen. Includes bibliographical references.
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Revisiting nitride semiconductors : epilayers, p-type doping and nanowires : a thesis submitted in partial fulfilment of the requirements for the degree of Doctor of Philosophy in Electrical and Electronic Engineering at the University of Canterbury, Christchurch, New Zealand /Kendrick, C. E. January 1900 (has links)
Thesis (Ph. D.)--University of Canterbury, 2008. / Typescript (photocopy). "September 2008." Includes bibliographical references (p. [190]-210). Also available via the World Wide Web.
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Gallium nitride based blue laser diodesKuchibhatla, Sridhar. January 1900 (has links)
Thesis (M.S.)--West Virginia University, 2005. / Title from document title page. Document formatted into pages; contains xi, 100 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 68-73).
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Developing UV photodetector and ohmic contact techniques on GaNTurlapati, Lavanya. January 1900 (has links)
Thesis (M.S.)--West Virginia University, 2004. / Title from document title page. Document formatted into pages; contains xii, 106 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 85-92).
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AlGaN-GaN single- and double-channel high electron mobility transistors /Chu, Rongming. January 2004 (has links)
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2004. / Includes bibliographical references (leaves 74-82). Also available in electronic version. Access restricted to campus users.
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Development of transparent indium tin oxide ohmic contacts to GaNGuo, Hong, January 1900 (has links)
Thesis (M.S.)--West Virginia University, 2009. / Title from document title page. Document formatted into pages; contains ix, 72 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 66-72).
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Metrology of gan electronics using micro-raman spectroscopyBeechem, Thomas E., III. January 2008 (has links)
Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2009. / Committee Chair: Graham, Samuel; Committee Member: Bassiri-Gharb, Nazanin; Committee Member: Doolittle, William A.; Committee Member: Garimella, Srinivas; Committee Member: Green, Dan; Committee Member: Sitaraman, Suresh. Part of the SMARTech Electronic Thesis and Dissertation Collection.
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Polarity inverted GaN for photonic crystal biosensorsTompkins, Randy P. January 1900 (has links)
Thesis (Ph. D.)--West Virginia University, 2009. / Title from document title page. Document formatted into pages; contains xii, 142 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 138-142).
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