Dissertation (Ph.D.)--Auburn University, / Abstract. Vita. Includes bibliographic references (p.117-130).

Thesis (M. S.)--Electrical and Computer Engineering, Georgia Institute of Technology, 2009. / Committee Chair: William. Alan Doolittle; Committee Member: Jeffrey Nause; Committee Member: Linda S. Milor; Committee Member: Shyh-Chiang Shen; Committee Member: Stephen E. Ralph.

Thesis (M.S.)--California Polytechnic State University, 2009. / Mode of access: Internet. Title from PDF title page; viewed on May 21, 2009. Major professor: Xiaomin Jin. "Presented to the faculty of California Polytechnic State University, San Luis Obispo." "In partial fulfillment of the requirements for the degree [of] Master of Science in Electrical Engineering." "March 2009." Includes bibliographical references (p. 80-84). Also available on microfiche.

Thesis (M.S.)--West Virginia University, 2009. / Title from document title page. Document formatted into pages; contains viii, 77 p. : ill. (some col.). Includes abstract. Includes bibliographical references (p. 66-68).

Thesis (Ph.D)--Mechanical Engineering, Georgia Institute of Technology, 2010. / Committee Chair: Samuel Graham; Committee Member: Donald Dorsey; Committee Member: Douglas Yoder; Committee Member: Michael Leamy; Committee Member: Sankar Nair; Committee Member: Zhuomin Zhang. Part of the SMARTech Electronic Thesis and Dissertation Collection.

Thesis (Ph.D.(Physics))--University of Pretoria, 2009. / Includes abstract in English. Includes bibliographical references. Also available online.

Thesis (Ph.D.)--Hong Kong University of Science and Technology, 2006. / Includes bibliographical references. Also available in electronic version.

Thesis (Ph.D.)--Ohio University, March, 2003. / Title from PDF t.p. Includes bibliographical references (leaves 147-151)

We report on the characteristics of a ZnO based metal insulator semiconductor (MIS) diode comprised of a heterostructure of n-ZnO nanorods/n-GaN. The MIS structure consisted of unintentional - doped n type ZnO nanorods grown on n-GaN sample using hydrothermal synthesis at low temperature (100°). The ZnO nanorod layer was vertically grown from the GaN sample, having the diameter 100nm and length 2µm. Then, an insulator layer for electrical isolation was deposited on the top of ZnO nanorod layer by using spin coating method. A metal layer (gold) was finally deposited on the top. The I-V dependences show a rectifying diode like behavior with a leakage current of 2.10⁻⁵ A and a threshold voltage of about 3V. Depend on the thickness of the insulator, the I-V dependences of the n-ZnO/n-GaN heterostructure was varied from rectifying behavior to Ohmic and nearly linear. / Singapore-MIT Alliance (SMA)

Optoelectronic devices fabricated from nitride semiconductors include blue and green light emitting diodes (LEDs) and laser diodes (LDs). To design efficient devices, the structure and composition of the constituent materials must be well-characterised. Traditional microscopy techniques used to examine nitride semiconductors include transmission electron microscopy (TEM), and atomic force microscopy (AFM). This thesis describes the study of nitride semiconductor materials using these traditional methods, as well as atom probe tomography (APT), a technique more usually applied to metals that provides three-dimensional (3D) compositional information at the atomic scale. By using both APT and correlative microscopy techniques, a more complete understanding of the material can be gained, which can potentially lead to higher-efficiency, longer-lasting devices. Defects, such as threading dislocations (TDs), can harm device performance. An AFM-based technique was used to show that TDs affect the local electrical properties of nitride materials. To investigate any compositional changes around the TD, APT studies of TDs were attempted, and evidence for oxygen enrichment near the TD was observed. The dopant level in nitride devices also affects their optoelectronic properties, and the combination of APT and TEM was used to show that Mg dopants were preferentially incorporated into pyramidal inversion domains, with a Mg content two orders of magnitude above the background level. Much debate has been focused on the microstructural origin of charge carrier localisation in InGaN. Alloy inhomogeneities have often been suggested to provide this localisation, yet APT has revealed InGaN quantum wells to be a statistically random alloy. Electron beam irradiation in the TEM caused damage to the InGaN, however, and a statistically significant deviation from a random alloy distribution was then observed by APT. The alloy homogeneity of InAlN was also studied, and this alloy system provided a unique opportunity to study gallium implantation damage to the APT sample caused during sample preparation by the focused ion beam (FIB). The combination of APT with traditional microscopy techniques made it possible to achieve a thorough understanding of a wide variety of nitride semiconductor materials.