A Lagrangian formalism presented by Hay, Ilinskii, Zabolotskaya, and Hamilton [J. Acoust. Soc. Am. 132, 124--137 (2012)] to calculate the pulsation of a spherical bubble, immersed in liquid and near one or two viscoelastic layers, is extended here to include bubble translation. The method presented here is simplified from that given by Hay et al. in that only a single interface between a liquid and a viscoelastic half-space is considered. In the present approach the force on the bubble due to the presence of the liquid-solid interface is calculated using a Green's function that takes into account elastic waves and viscosity in the layer, and the viscous boundary layer within the liquid near the interface. Previous models and experiments have shown that the direction of bubble translation near a viscoelastic layer is correlated with the direction of a liquid jet often produced by the bubble during collapse. In this dissertation an attempt is made to model the pulsation and translation of a spherical bubble near a liquid-solid interface to infer the direction of bubble translation in reference to material parameters of the liquid and viscoelastic medium, and the standoff distance of the bubble from the interface. The analysis is simplified by demonstrating that the direction of bubble translation can be inferred from the phase of the component of the Green's function associated with the reverberant pressure gradient. For linear bubble pulsation it is shown that the domain of material properties of the viscoelastic medium which generally corresponds to bubble translation away from the interface occurs when the effective stiffness of the viscoelastic medium is greater than the effective damping for both itself and the liquid. The analysis is performed assuming the viscoelastic medium is similar to soft tissue, and its dynamics are described by a Voigt, Kelvin, or Maxwell model. The simulations are compared with existing experimental data. Effects of high-amplitude bubble pulsation are explored in terms of how the simulations differ as the pulsation amplitude increases. At higher pulsation amplitudes, it is shown that bubble translation is still described qualitatively by analyzing the phase of the reverberant pressure gradient. / text

The fact that loosely bonded DNA bases could tolerate large structural fluctuations, form a dissipative environment for a charge traveling through the DNA. Nonlinear stochastic nature of structural fluctuations facilitates rich charge dynamics in DNA. We study the complex charge dynamics by solving a nonlinear, stochastic, coupled system of differential equations. Charge transfer between donor and acceptor in DNA occurs via different mechanisms depending on the distance between donor and acceptor. It changes from tunneling regime to a polaron assisted hopping regime depending on the donor-acceptor separation. Also we found that charge transport strongly depends on the feasibility of polaron formation. Hence it has complex dependence on temperature and charge-vibrations coupling strength. Mismatched base pairs, such as different conformations of the G・A mispair, cause only minor structural changes in the host DNA molecule, thereby making mispair recognition an arduous task. Electron transport in DNA that depends strongly on the hopping transfer integrals between the nearest base pairs, which in turn are affected by the presence of a mispair, might be an attractive approach in this regard. I report here on our investigations, via the I –V characteristics, of the effect of a mispair on the electrical properties of homogeneous and generic DNA molecules. The I –V characteristics of DNA were studied numerically within the double-stranded tight-binding model. The parameters of the tight-binding model, such as the transfer integrals and on-site energies, are determined from first-principles calculations. The changes in electrical current through the DNA chain due to the presence of a mispair depend on the conformation of the G・A mispair and are appreciable for DNA consisting of up to 90 base pairs. For homogeneous DNA sequences the current through DNA is suppressed and the strongest suppression is realized for the G(anti)・A(syn) conformation of the G・A mispair. For inhomogeneous (generic) DNA molecules, the mispair result can be either suppression or an enhancement of the current, depending on the type of mispairs and actual DNA sequence.

The fact that loosely bonded DNA bases could tolerate large structural fluctuations, form a dissipative environment for a charge traveling through the DNA. Nonlinear stochastic nature of structural fluctuations facilitates rich charge dynamics in DNA. We study the complex charge dynamics by solving a nonlinear, stochastic, coupled system of differential equations. Charge transfer between donor and acceptor in DNA occurs via different mechanisms depending on the distance between donor and acceptor. It changes from tunneling regime to a polaron assisted hopping regime depending on the donor-acceptor separation. Also we found that charge transport strongly depends on the feasibility of polaron formation. Hence it has complex dependence on temperature and charge-vibrations coupling strength. Mismatched base pairs, such as different conformations of the G・A mispair, cause only minor structural changes in the host DNA molecule, thereby making mispair recognition an arduous task. Electron transport in DNA that depends strongly on the hopping transfer integrals between the nearest base pairs, which in turn are affected by the presence of a mispair, might be an attractive approach in this regard. I report here on our investigations, via the I –V characteristics, of the effect of a mispair on the electrical properties of homogeneous and generic DNA molecules. The I –V characteristics of DNA were studied numerically within the double-stranded tight-binding model. The parameters of the tight-binding model, such as the transfer integrals and on-site energies, are determined from first-principles calculations. The changes in electrical current through the DNA chain due to the presence of a mispair depend on the conformation of the G・A mispair and are appreciable for DNA consisting of up to 90 base pairs. For homogeneous DNA sequences the current through DNA is suppressed and the strongest suppression is realized for the G(anti)・A(syn) conformation of the G・A mispair. For inhomogeneous (generic) DNA molecules, the mispair result can be either suppression or an enhancement of the current, depending on the type of mispairs and actual DNA sequence.

Made available in DSpace on 2014-12-17T14:55:58Z (GMT). No. of bitstreams: 1 PauloFB.pdf: 617080 bytes, checksum: 5f9c06266e137d13c8b810163ede788d (MD5) Previous issue date: 2005-08-25 / Coordena??o de Aperfei?oamento de Pessoal de N?vel Superior / Microstrip antennas are widely used in modern telecommunication systems. This is particularly due to the great variety of geometries and because they are easily built and integrated to other high frequency devices and circuits. This work presents a study of the properties of the microstrip antenna with an aperture impressed in the conducting patch. Besides, the analysis is performed for isotropic and anisotropic dielectric substrates. The Multiport Network Model MNM is used in combination with the Segmentation Method and the Greens function technique in the analysis of the considered microstrip antenna geometries. The numerical analysis is performed by using the boundary value problem solution, by considering separately the impedance matrix of the structure segments. The analysis for the complete structure is implemented by choosing properly the number and location of the neighboor element ports. The numerial analysis is performed for the following antenna geometries: resonant cavity, microstrip rectangular patch antenna, and microstrip rectangular patch antenna with aperture. The analysis is firstly developed for microstrip antennas on isotropic substrates, and then extended to the case of microstrip antennas on anisotropic substrates by using a Mapping Method. The experimental work is described and related to the development of several prototypes of rectangular microstrip patch antennas wtih and without rectangular apertures. A good agreement was observed between the simulated and measured results. Thereafter, a good agreement was also observed between the results of this work and those shown in literature for microstrip antennas on isotropic substrates. Furthermore, results are proposed for rectangular microstrip patch antennas wtih rectangular apertures in the conducting patch / As antenas de microfita s?o estruturas muito utilizadas nos sistemas de telecomunica??es atuais. Isto decorre, principalmente, da diversidade de configura??es e da facilidade de constru??o e integra??o dessas antenas com outros dispositivos e circuitos de altas freq??ncias. Neste trabalho, o m?todo de an?lise empregado ? o Modelo de Circuito de M?lti-Porta (Multiport Network Model MNM), que combinado com o M?todo da Segmenta??o e a t?cnica da Fun??o de Green, mostra-se adequado ao estudo da antena de microfita com abertura no patch condutor. A partir do equacionamento do problema do valor de contorno, ? ent?o realizada uma an?lise num?rica que consiste em avaliar a estrutura da antena considerada a partir da integra??o dos elementos em que ela foi dividida. Nessa an?lise, os elementos s?o representados por matrizes de imped?ncia e a integra??o ? implementada atrav?s de portas de circuitos adequadamente escolhidas em n?mero e posicionamento. Na an?lise num?rica, foram consideradas as seguintes estruturas: a cavidade ressonante, a microfita com patch retangular convencional (sem abertura) e a microfita com patch retangular com abertura. A an?lise foi efetuada para substratos isotr?picos e estendida para o caso de antenas com substratos anisotr?picos uniaxiais atrav?s do M?todo do Mapeamento. S?o apresentados resultados para a freq??ncia de resson?ncia e para a imped?ncia de entrada de antenas de microfita. A parte experimental do trabalho consistiu no projeto, constru??o e medi??o de v?rios prot?tipos de antenas de microfita com patches retangulares com e sem abertura. Observou-se que os resultados obtidos, atrav?s da simula??o num?rica, apresentaram uma boa concord?ncia com os das medi??es efetuadas. Os resultados deste trabalho, tamb?m, concordaram com os resultados de outros autores, dispon?veis na literatura

In dieser Arbeit werden Algorithmen für die Berechnung elektronischer Korrelations- und Anregungsenergien mittels der Coupled-Cluster Methode auf adaptiven Gittern entwickelt und implementiert. Die jeweiligen Funktionen und Operatoren werden adaptiv durch Multiskalenanalyse dargestellt, was eine Basissatz unabängige Beschreibung mit kontrollierter numerischer Genauigkeit ermöglicht. Gleichungen für die Coupled-Cluster Methode werden in einem verallgemeinerten Rahmen, unabhängig von virtuellen Orbitalen und globalen Basissätzen, neu formuliert. Hierzu werden die amplitudengewichteten Anregungen in virtuelle Orbitale ersetzt durch Anregungen in n-Elektronenfunktionen, welche durch Gleichungen im n-Elektronen Ortsraum bestimmt sind. Die erhaltenen Gleichungen können, analog zur Basissatz abh¨angigen Form, mit leicht angepasster Interpretation diagrammatisch dargestellt werden. Aufgrund des singulären Coulomb Potentials werden die Arbeitsgleichungen mit einem explizit korrelierten Ansatz regularisiert. Coupled-Cluster singles mit genäherten doubles (CC2) und ähnliche Modelle werden, für geschlossenschalige Systeme und in regularisierter Form, in die MADNESS Bibliothek (eine allgemeine Bibliothek zur Darstellung von Funktionen und Operatoren mittels Multiskalenanalyse) implementiert. Mit der vorgestellten Methode können elektronische CC2 Paarkorrelationsenergien und Anregungsenergien mit bestimmter numerischer Genauigkeit unabhängig von globalen Basissätzen berechnet werden, was anhand von kleinen Molekülen verifiziert wird / In this work algorithms for the computation of electronic correlation and excitation energies with the Coupled-Cluster method on adaptive grids are developed and implemented. The corresponding functions and operators are adaptively represented with multiresolution analysis allowing a basis-set independent description with controlled numerical accuracy. Equations for the coupled-cluster model are reformulated in a generalized framework independent of virtual orbitals and global basis-sets. For this, the amplitude weighted excitations into virtuals are replaced by excitations into n-electron functions which are determined by projected equations in the n-electron position space. The resulting equations can be represented diagrammatically analogous to basis-set dependent approaches with slightly adjusted rules of interpretation. Due to the singular Coulomb potential, the working equations are regularized with an explicitly correlated ansatz. Coupled-cluster singles with approximate doubles (CC2) and similar models are implemented for closed-shell systems and in regularized form into the MADNESS library (a general library for the representation of functions and operators with multiresolution analysis). With the presented approach electronic CC2 pair-correlation energies and excitation energies can be computed with definite numerical accuracy and without dependence on global basis sets, which is verified on small molecules.

The continuous migration to smaller feature sizes puts high demands on materials and technologies for future ultra-large-scale integrated circuits. Particularly, the copper-based interconnect system will reach fundamental limits soon. Their outstanding properties make metallic carbon nanotubes (CNTs) an ideal material to partially replace copper in future interconnect architectures. Here, a low contact resistance to existing metal lines is crucial. The present thesis contributes to the theory and numerical description of electronic transport in metallic CNTs with metal contacts. Different theoretical approaches are applied to various contact models and electrode materials (Al, Cu, Pd, Ag, Pt, Au) are compared. Ballistic transport calculations are based on the non-equilibrium Greens function formalism combined with tight-binding (TB), extended Hückel theory (EHT) and density functional theory (DFT). Simplified contact models allow a qualitative investigation of both the influence of geometry and CNT length, and the strength and extent of the contact on the transport properties. In addition, such simple contact models are used to compare the influence of different electronic structure methods on transport. It is found that the semiempirical TB and EHT are inadequate to quantitatively reproduce the DFT-based results. Based on this observation, an improved set of Hückel parameters is developed, which remedies this insufficiency. A systematic investigation of different contact materials is carried out using well defined atomistic metal-CNT-metal structures, optimized in a systematic way. Analytical models for the CNT-metal interaction are proposed. Based on that, electronic transport calculations are carried out, which can be extended to large systems by applying the computationally cheap improved EHT. The metal-CNT-metal systems can then be ranked by average conductance: Ag ≤ Au < Cu < Pt ≤ Pd < Al. This corresponds qualitatively with calculated contact distances, binding energies and work functions of CNTs and metals. To gain a deeper understanding of the transport properties, the electronic structure of the metal-CNT-metal systems and their respective parts is analyzed in detail. Here, the energy resolved local density of states is a valuable tool to investigate the CNT-metal interaction and its influences on the transport. / Die kontinuierliche Verkleinerung der Strukturgrößen stellt hohe Anforderungen an Materialen und Technologien zukünftiger hochintegrierter Schaltkreise. Insbesondere die Leistungsfähigkeit kupferbasierte Leitbahnsystem wird bald an fundamentale Grenzen stoßen. Aufgrund ihrer hervorragenden Eigenschaften könnten metallische Kohlenstoffnanoröhren (engl. Carbon Nanotubes, CNTs) Kupfer in zukünftigen Leitbahnsystemen teilweise ersetzen. Dabei ist ein geringer Kontaktwiderstand mit vorhandenen Leitbahnen von entscheidender Bedeutung. Die vorliegende Arbeit liefert grundlegende Beiträge zur Theorie und zur numerischen Beschreibung elektronischer Transporteigenschaften metallischer CNTs mit Metallkontakten. Dazu werden verschiedene theoretische Ansätze auf diverse Kontaktmodelle angewandt und eine Auswahl von Elektrodenmaterialen (Al, Cu, Pd, Ag, Pt, Au) verglichen. Die Beschreibung ballistischen Elektronentransports erfolgt mittels des Formalismus der Nichtgleichgewichts-Green-Funktionen in Kombination mit Tight-Binding (TB), erweiterter Hückel-Theorie (EHT) und Dichtefunktionaltheorie (DFT). Vereinfachte Kontaktmodelle dienen der qualitativen Untersuchung des Einflusses von Geometrie und Länge der Nanoröhren, sowie von Stärke und Ausdehnung des Kontaktes. Darüber hinaus erlauben solch einfache Modelle mit geringem numerischen Aufwand den Einfluss verschiedener Elektronenstrukturmethoden zu untersuchen. Es zeigt sich, dass die semiempirischen Methoden TB und EHT nicht in der Lage sind die Ergebnisse der DFT quantitativ zu reproduzieren. Ausgehend von diesen Ergebnissen wird ein verbesserter Satz von Hückel-Parametern generiert, der diesen Mangel behebt. Die Untersuchung verschiedener Kontaktmaterialien erfolgt an wohldefinierten atomistischen Metall-CNT-Metall-Strukturen, welche systematisch optimiert werden. Analytische Modelle zur Beschreibung der CNT-Metall-Wechselwirkung werden vorgeschlagen. Darauf aufbauende Berechnungen der elektronischen Transporteigenschaften, können mit Hilfe der verbesserten EHT auf große Systeme ausgedehnt werden. Die Ergebnisse ermöglichen eine Reihung der Metall-CNT-Metall-Systeme hinsichtlich ihrer Leitfähigkeit: Ag ≤ Au < Cu < Pt ≤ Pd < Al. Dies korrespondiert qualitativ mit berechneten Kontaktabständen, Bindungsenergien und Austrittarbeiten der CNTs und Metalle. Zum tieferen Verständnis der Transporteigenschaften erfolgt eine detaillierte Analyse der elektronischen Struktur der Metall-CNT-Metall-Systeme und ihrer Teilsysteme. Dabei erweist sich die energieaufgelöste lokale Zustandsdichte als nützliches Werkzeug zur Visulisierung und zur Charakterisierung der Wechselwirkung zwischen CNT und Metall sowie deren Einfluss auf den Transport.

The continuous migration to smaller feature sizes puts high demands on materials and technologies for future ultra-large-scale integrated circuits. Particularly, the copper-based interconnect system will reach fundamental limits soon. Their outstanding properties make metallic carbon nanotubes (CNTs) an ideal material to partially replace copper in future interconnect architectures. Here, a low contact resistance to existing metal lines is crucial. The present thesis contributes to the theory and numerical description of electronic transport in metallic CNTs with metal contacts. Different theoretical approaches are applied to various contact models and electrode materials (Al, Cu, Pd, Ag, Pt, Au) are compared. Ballistic transport calculations are based on the non-equilibrium Greens function formalism combined with tight-binding (TB), extended Hückel theory (EHT) and density functional theory (DFT). Simplified contact models allow a qualitative investigation of both the influence of geometry and CNT length, and the strength and extent of the contact on the transport properties. In addition, such simple contact models are used to compare the influence of different electronic structure methods on transport. It is found that the semiempirical TB and EHT are inadequate to quantitatively reproduce the DFT-based results. Based on this observation, an improved set of Hückel parameters is developed, which remedies this insufficiency. A systematic investigation of different contact materials is carried out using well defined atomistic metal-CNT-metal structures, optimized in a systematic way. Analytical models for the CNT-metal interaction are proposed. Based on that, electronic transport calculations are carried out, which can be extended to large systems by applying the computationally cheap improved EHT. The metal-CNT-metal systems can then be ranked by average conductance: Ag ≤ Au < Cu < Pt ≤ Pd < Al. This corresponds qualitatively with calculated contact distances, binding energies and work functions of CNTs and metals. To gain a deeper understanding of the transport properties, the electronic structure of the metal-CNT-metal systems and their respective parts is analyzed in detail. Here, the energy resolved local density of states is a valuable tool to investigate the CNT-metal interaction and its influences on the transport. / Die kontinuierliche Verkleinerung der Strukturgrößen stellt hohe Anforderungen an Materialen und Technologien zukünftiger hochintegrierter Schaltkreise. Insbesondere die Leistungsfähigkeit kupferbasierte Leitbahnsystem wird bald an fundamentale Grenzen stoßen. Aufgrund ihrer hervorragenden Eigenschaften könnten metallische Kohlenstoffnanoröhren (engl. Carbon Nanotubes, CNTs) Kupfer in zukünftigen Leitbahnsystemen teilweise ersetzen. Dabei ist ein geringer Kontaktwiderstand mit vorhandenen Leitbahnen von entscheidender Bedeutung. Die vorliegende Arbeit liefert grundlegende Beiträge zur Theorie und zur numerischen Beschreibung elektronischer Transporteigenschaften metallischer CNTs mit Metallkontakten. Dazu werden verschiedene theoretische Ansätze auf diverse Kontaktmodelle angewandt und eine Auswahl von Elektrodenmaterialen (Al, Cu, Pd, Ag, Pt, Au) verglichen. Die Beschreibung ballistischen Elektronentransports erfolgt mittels des Formalismus der Nichtgleichgewichts-Green-Funktionen in Kombination mit Tight-Binding (TB), erweiterter Hückel-Theorie (EHT) und Dichtefunktionaltheorie (DFT). Vereinfachte Kontaktmodelle dienen der qualitativen Untersuchung des Einflusses von Geometrie und Länge der Nanoröhren, sowie von Stärke und Ausdehnung des Kontaktes. Darüber hinaus erlauben solch einfache Modelle mit geringem numerischen Aufwand den Einfluss verschiedener Elektronenstrukturmethoden zu untersuchen. Es zeigt sich, dass die semiempirischen Methoden TB und EHT nicht in der Lage sind die Ergebnisse der DFT quantitativ zu reproduzieren. Ausgehend von diesen Ergebnissen wird ein verbesserter Satz von Hückel-Parametern generiert, der diesen Mangel behebt. Die Untersuchung verschiedener Kontaktmaterialien erfolgt an wohldefinierten atomistischen Metall-CNT-Metall-Strukturen, welche systematisch optimiert werden. Analytische Modelle zur Beschreibung der CNT-Metall-Wechselwirkung werden vorgeschlagen. Darauf aufbauende Berechnungen der elektronischen Transporteigenschaften, können mit Hilfe der verbesserten EHT auf große Systeme ausgedehnt werden. Die Ergebnisse ermöglichen eine Reihung der Metall-CNT-Metall-Systeme hinsichtlich ihrer Leitfähigkeit: Ag ≤ Au < Cu < Pt ≤ Pd < Al. Dies korrespondiert qualitativ mit berechneten Kontaktabständen, Bindungsenergien und Austrittarbeiten der CNTs und Metalle. Zum tieferen Verständnis der Transporteigenschaften erfolgt eine detaillierte Analyse der elektronischen Struktur der Metall-CNT-Metall-Systeme und ihrer Teilsysteme. Dabei erweist sich die energieaufgelöste lokale Zustandsdichte als nützliches Werkzeug zur Visulisierung und zur Charakterisierung der Wechselwirkung zwischen CNT und Metall sowie deren Einfluss auf den Transport.