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Charge trapping effects on mobility and threshold voltage instability in high-k gate stacksSim, Jang Hoan 28 August 2008 (has links)
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High-permittivity dielectrics and high mobility semiconductors for future scaled technology: Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS deviceLu, Nan 28 August 2008 (has links)
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Interfacial properties of thin film hetero-structure copper-oxides of hafnium-silicon /Park, Hyun Jung. January 2002 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2002. / Vita. Includes bibliographical references. Available also from UMI Company.
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Technology development and process integration of alternative gate dielectric material : hafnium oxide /Lee, Byoung Hun, January 2000 (has links)
Thesis (Ph. D.)--University of Texas at Austin, 2000. / Vita. Includes bibliographical references (leaves 123-134). Available also in a digital version from Dissertation Abstracts.
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Characterization and reliability of HFO₂ and hfsion gate dielectrics with tin metal gateKrishnan, Siddarth A., January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.
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Charge trapping effects on mobility and threshold voltage instability in high-k gate stacksSim, Jang Hoan. January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2005. / Vita. Includes bibliographical references.
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High-permittivity dielectrics and high mobility semiconductors for future scaled technology Hf-based High-K gate dielectrics and interface engineering for HfO₂/Ge CMOS device /Lu, Nan, January 1900 (has links) (PDF)
Thesis (Ph. D.)--University of Texas at Austin, 2006. / Vita. Includes bibliographical references.
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Fabrication and characterization of hafnium oxide films prepared by direct sputtering /Zhan, Nian. January 2003 (has links)
Thesis (M. Phil.)--Hong Kong University of Science and Technology, 2003. / Includes bibliographical references. Also available in electronic version. Access restricted to campus users.
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Interfacial properties of thin film hetero-structure: copper-oxides of hafnium-siliconPark, Hyun Jung 28 August 2008 (has links)
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Hafnium dioxide gate dielectrics, metal gate electrodes, and phenomena occurring at their interfacesSchaeffer, James Kenyon 28 August 2008 (has links)
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