Thesis (M.S.) in Electrical Engineering--University of Maine, 2003. / Includes vita. Includes bibliographical references (leaves 55-57).

Thesis (Ph. D.)--Columbia University, 1940. / Vita. Bibliography: p. [22].

No description available.

Th. 3e cycle--Physico-chim. des matér.--Toulouse--I.N.P., 1979. N°: 41.

Th.--Sci. phys.--Toulouse--I.N.P., 1979. N°: 41.

The tetra-halides of zirconium and hafnium were reacted with one equivalent of the potentially tridentate hybrid ligand, N(SiMe₂CH₂PR₂)2-, (R = Me, i-Pr, t-Bu) to generate the corresponding mono-ligand complexes MCl₃{N(SiMe₂CH₂PR₂)₂), (M = Zr, Hf). Based on the results obtained from the solution spectroscopic data and the single crystal X-ray diffraction analyses of HfCI₃{N(SiMe₂CH₂PMe₂)₂> and ZrCl₃{N(SiMe₂CH₂P(i-Pr)₂)₂) the stereochemistries of all the MCI ₃{N(SiMe ₂CH₂PR₂) ₂) complexes were found to be meridional in solution, but both facial and meridional geometries were displayed in the solid state dependent on the ligand. The mono-ligand derivatives served as useful starting materials for the generation of zirconium- and hafnium-carbon bonds. Thus the addition of three equivalents of MeMgCl to one equivalent of MCl₃{N(SiMe₂CH₂PR₂)₂} generated the trimethyl complexes M(CH₃)₃{N(SiMe₂CH₂PR₂)₂}. When two equivalents of MeMgCl was added to the mono-ligand complexes, an inseparable mixture of the monomethyl and dimethyl derivatives was obtained. The stereochemistry of Hf(CH₃)₃{N(SiMe₂CH₂PMe₂)₂} is facial in the solid state but displays unusual fluxional behaviour in solution. This behaviour is observed for all the trimethyl derivatives as a consequence of the dissociative nature of the phosphine donors. Several possible rearrangement pathways for these compounds are discussed in an attempt to interpret this behaviour in solution. / Science, Faculty of / Chemistry, Department of / Graduate

No description available.

This project investigated the reactive formation of hafnium diboride (HfB2) in a variety of metallic environments, including blends with Bi, Cu, Ni, and Sb. HfB2 has garnered interest for a variety of applications due to its hardness, stability at elevated temperatures, as well as electrical and thermal conductivity. Experimental testing included differential scanning calorimetry (DSC) to reveal reaction initiation temperatures and enthalpies of reaction; and optical pyrometry to measure maximum reaction temperatures. Overall, DSC results indicated melting preceded reaction initiation; suggesting that the reaction initiation temperature for a certain blend occurred soon after melt formation, and could be broadly approximated by examination of binary phase diagrams. However, compositions containing bismuth ignited almost 200 ºC above the expected melting temperature. The maximum temperature measurement did not appear to correlate with reaction enthalpies as might be expected. This lack of correlation may be a result of an inability to capture the true maximum temperature due to the measurement frequency of the pyrometer, the disparity of heating rates between the two experimental methods, and/or to the influence of intermediate reactions on the temperature increase. / Master of Science

Wang Xiaofeng = Hf基高K介电薄膜的微观结构和电子结构研究 / 王晓峰. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references (leaves 62-67). / Text in English; abstracts in English and Chinese. / Wang Xiaofeng = Hf ji gao K jie dian bo mo de wei guan jie gou he dian zi jie gou yan jiu / Wang Xiaofeng. / Table of Contents --- p.iv / List of Figures --- p.vii / List of Tables --- p.x / Chapter 1 --- Introduction --- p.1 / Chapter 2 --- Background --- p.3 / Chapter 2.1 --- Ideal high-k materials --- p.3 / Chapter 2.1.1 --- Current problems with Si02 and possible solutions --- p.3 / Chapter 2.1.2 --- Requirements on the high-k gate dielectric materials --- p.6 / Chapter 2.2 --- Recent results on high-k gate dielectrics --- p.8 / Chapter 2.2.1 --- A1203 --- p.8 / Chapter 2.2.2 --- Y203 and La203 --- p.9 / Chapter 2.2.3 --- Hf02 and Zr02 --- p.10 / Chapter 2.2.4 --- Pseudo-binary Alloys --- p.10 / Chapter 3 --- Experimental and Instrumentation --- p.13 / Chapter 3.1 --- Transmission electron microscopy (TEM) --- p.13 / Chapter 3.2 --- Transmission electron diffraction (TED) --- p.15 / Chapter 3.3 --- Electron energy loss spectroscopy (EELS) --- p.16 / Chapter 4 --- Data Analysis Methodology --- p.22 / Chapter 4.1 --- Diffraction analysis --- p.22 / Chapter 4.1.1 --- Ring ratio analysis for polycrystal diffraction pattern --- p.23 / Chapter 4.1.2 --- RDF analysis for amorphous materials --- p.24 / Chapter 4.2 --- Eliminating the plural scattering in EELS --- p.29 / Chapter 4.2.1 --- Removal of plural scattering from inner-shell edges --- p.30 / Chapter 4.2.2 --- Fourier-Ratio deconvolution --- p.30 / Chapter 4.2.3 --- "Demonstration using Co L2,3 core-loss spectrum" --- p.31 / Chapter 5 --- The Temperature Effect on the Microstructure of HfO2 Films --- p.37 / Chapter 5.1 --- Experimental --- p.38 / Chapter 5.2 --- Phase identification and crystallinity analysis of the Hf02 thin films --- p.38 / Chapter 5.2.1 --- Phase and crystallinity analysis from TEDs --- p.38 / Chapter 5.2.2 --- The phase and crystallinity evolution with the growth temperature --- p.39 / Chapter 5.3 --- The local symmetry of Hf atom in the films --- p.40 / Chapter 6 --- Effect of A1 Addition on the Microstructure and Electronic Structure of HfO2 Films --- p.43 / Chapter 6.1 --- Experimental --- p.44 / Chapter 6.2 --- RDF analysis of HfAlO films --- p.45 / Chapter 6.3 --- The local symmetry of Hf atom in the HfAlO films --- p.46 / Chapter 6.4 --- Loss functions of HfAlO films --- p.48 / Chapter 7 --- Comparison of A1 and Y Addition on the Microstructure of Hf02 Films --- p.56 / Chapter 7.1 --- Experimental --- p.57 / Chapter 7.2 --- Phase identification and crystallinity analysis of the alloy thin films --- p.57 / Chapter 7.2.1 --- Phase and crystallinity analysis from TEDs --- p.57 / Chapter 7.2.2 --- The phase and crystallinity evolution with the Y and A1 incorporation --- p.58 / Chapter 7.3 --- The local symmetry of Hf atom in the alloy thin films --- p.59 / Chapter 8 --- Conclusion --- p.61 / Bibliography --- p.62

Wang Lei. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2006. / Includes bibliographical references. / Abstracts in English and Chinese. / List of Figures --- p.vi / Chapter Chapter 1 --- Introduction --- p.1 / Chapter 1.1 --- Scaling issues of Metal-Oxide-Semiconductor field effect transistor --- p.1 / Chapter 1.2 --- Alternative high-k gate dielectrics --- p.4 / Chapter 1.3 --- Overview of this thesis --- p.9 / References --- p.10 / Chapter Chapter 2 --- Deposition and characterization techniques for ultrathin HfO2 films --- p.11 / Chapter 2.1 --- Introduction --- p.11 / Chapter 2.2 --- Ultrathin Hf02 Films Growth and Post Deposition Modification --- p.11 / Chapter 2.2.1 --- Ultrahigh Vacuum Electron-beam Evaporation --- p.11 / Chapter 2.2.2 --- High Concentration Ozone Annealing --- p.12 / Chapter 2.2.3 --- Plasma Immersion Ion Implantation --- p.14 / Chapter 2.2.4 --- Rapid Thermal Annealing --- p.16 / Chapter 2.3 --- Compositional Characterization Techniques --- p.17 / Chapter 2.3.1 --- X-ray Photoelectron Spectroscopy --- p.17 / Chapter 2.3.2 --- Rutherford Backscattering Spectrometry --- p.18 / Chapter 2.4 --- Structural and Surface Morphological Characterization Techniques --- p.19 / Chapter 2.4.1 --- High-Resolution Transmission Electron Microscopy --- p.19 / Chapter 2.4.2 --- Ultrahigh Vacuum Scanning Tunneling Microscopy --- p.20 / Chapter 2.4.3 --- Ultrahigh Vacuum Atomic Force Microscopy --- p.22 / Chapter 2.5 --- Electrical Characterization --- p.24 / Chapter 2.5.1 --- Capacitance-voltage (C-V) Measurement --- p.24 / Chapter 2.5.2 --- Current-voltage (I-V) Measurement --- p.25 / References --- p.26 / Chapter Chapter 3 --- Control of interfacial silicate between Hf and SiO2 by high concentration ozone --- p.27 / Chapter 3.1 --- Introduction --- p.27 / Chapter 3.2 --- Experimental procedure --- p.28 / Chapter 3.3 --- Results and discussion --- p.29 / Chapter 3.4 --- Conclusion --- p.35 / References --- p.36 / Chapter Chapter 4 --- Electrical characteristics of postdepositon annealed ultrathin Hf02 films --- p.37 / Chapter 4.1 --- Introduction --- p.37 / Chapter 4.2 --- Capacitance of gate stack in metal-insulator-semiconductor structure --- p.38 / Chapter 4.3 --- Electrical characteristics of ultrathin HfO2 films by high temperature Ozone oxidation --- p.39 / Chapter 4.4 --- Electrical and structural properties of ultrathin HfO2 films by high temperature rapid thermal annealing --- p.46 / Chapter 4.5 --- Conclusion --- p.48 / References --- p.50 / Chapter Chapter 5 --- Effect of nitrogen incorporation on thermal stability of ultrathin Hf02 films --- p.51 / Chapter 5.1 --- Introduction --- p.51 / Chapter 5.2 --- Experimental procedure --- p.52 / Chapter 5.3 --- Results and discussion --- p.52 / Chapter 5.4 --- Conclusion --- p.58 / References --- p.59 / Chapter Chapter 6 --- Local characterization of ultrathin HfO2 films by in-situ Ultrahigh Vacuum Scanning Probe Microscopy --- p.61 / Chapter 6.1 --- Introduction --- p.61 / Chapter 6.2 --- Experimental procedure --- p.62 / Chapter 6.3 --- Morphology and structure of initial growth of HfO2 --- p.63 / Chapter 6.4 --- Local characterization of ultrathin HfO2 films by in-situ UHV-STM --- p.66 / Chapter 6.5 --- UHV c-AFM study of leakage path evolution in ultrathin Hf02 films --- p.71 / Chapter 6.6 --- Conclusion --- p.72 / References --- p.73 / Chapter Chapter 7 --- Conclusion --- p.74 / Publications --- p.76