Neste trabalho estudamos as propriedades eletrônicas de um sistema com dopagem planar ou delta. Resolvemos as equações de Schrodinger e Poisson autoconsistentemente na aproximação de Hatree para diferentes situações de interesse com ou sem campos magnéticos ou elétricos externos. O método empregado para resolvermos a equação de Schrodinger e baseado na técnica do split operator. Obtemos o potencial efetivo, os níveis de energia e a densidade eletrônica em função da temperatura, densidade e largura de difusão dos doadores. Para um campo magnético uniforme aplicado perpendicularmente ao plano de doadores mostramos que não ocorre nenhuma alteração na estrutura das sub-bandas eletrônicas no intervalo entre 0 e 20T. Para um campo magnético uniforme aplicado paralelamente ao plano de doadores os níveis eletrônicos são deslocados para energias mais elevadas provocando uma diminuição na população dos níveis mais excitados e um aumento significativo na massa efetiva do elétron. Para sistemas na presença de um campo elétrico externo calculamos a energia das sub-bandas eletrônicas, a ocupação, a polarização e a capacitância em função da voltagem externa, da densidade e da posição das impurezas doadoras. Nossos resultados para capacitância estão qualitativamente em acordo com recentes resultados experimentais. / In this work we have studied the electronic proprieties of a system with planar doping or &#948-doping. We have solved the Schrodinger and Poisson equations self-consistently in the Hatree approximation for several conditions with or without external magnetic or electric fields. In order to solve Schrodinger equation we have employed the split operator technique. The effective potential, the energy levels and the electronic density was calculated as a function of temperature, donor density and donor diffusion width. With external magnetic field applied perpendicular to the donors plane it is shown that the sub-bands energies are not altered for fields in the range of 0 to 20T. With magnetic fields applied parallel to the donors plane we have observed that the energy levels are shifted to higher energies and a depopulation of the excited levels occur, also an enhancement of the electron effective mass is found. With an electric field applied to the system we have calculated the sub-bands energy levels, the electron concentration, the polarization, and the capacitance as a function of the gate voltage, donor density and the position of the donor plane. Our results for the capacitance agree qualitatively quite well with recent experimental data.

Atomically thin two-dimensional materials, such as graphene and semiconductor transition metal dichalcogenides (TMDCs), exhibit remarkable and desirable optical and electronic properties. This dissertation focuses on the excitonic properties of monolayer TMDCs taken first in isolation and then in contact with another material. We begin with a study of the exciton binding energy in two monolayer TMDCs, WS₂ and MoS₂. We observe excited states of the exciton by two different optical spectroscopy techniques: reflectance contrast and photoluminescence excitation (PLE) spectroscopy. We fit a hydrogenic model to the energies associated with the excited states and infer a binding energy, which is an order of magnitude higher than the bulk material. In the second half of this work, we study two types of two-dimensional vertical heterostructures. First, we investigate heterostructures composed of monolayer WS₂ partially capped with graphene one to four layers thick. Using reflectance contrast to measure the spectral broadening of the excitonic features, we measure the decrease in the coherence lifetime of the exciton in WS₂ due to charge and energy transfer when in contact with graphene. We then compare our results with the exciton lifetime in MoS₂/WS₂ and MoSe₂/WSe₂ heterostructures. In TMDC/TMDC heterostructures, the decrease in exciton lifetime is twice that in WS₂/graphene heterostructures and due predominantly to charge transfer between the layers. Finally, we probe the band alignment in MoS₂/WS₂ heterostructures using scanning tunneling microscopy (STM) and spectroscopy (STS).We confirm the monolayer band gaps and the predicted type II band alignment in the heterostructure. Drawing from all the research presented, we arrive at a favorable conclusion about the viability of TMDC based devices.

The goal of this dissertation is not only to present works completed and projects initiated and accomplished, but to also attempt to teach some of the material to readers who have limited exposure to condensed matter. I will offer an introduction to two-dimensional transition metal dichalcogenide materials (2D TMDCs) and the mathematics required to understand the research conducted. Some effort will be given on explaining the experimental setups and preparations. Projects that required elaborate sample fabrication and the yielded results will be summarized. These results have heavy implications for the science behind bound electron-hole pairs, the effects of magnetic fields on such pairs, and extracting the useful optical properties from the material systems in which these pairs reside. Specialized fabrication techniques of samples for longer term projects that I led will also be presented, namely those of constructing heterostructures by stacking various 2D TMDCs for exploring the modulated properties of these novel arrangements. The latter portion of this dissertation will cover the nanoscopic dynamics of TMDC heterostructures. The Kramers-Kronig relations will be derived and discussed in detail. Data and results regarding the electronic structure of these materials, their heterostructures, and their custom alloys measured via scanning tunneling microscopy will be presented. Coupled with the measured optical properties, significant numerical quantities that characterize these materials are extracted. There will be several appendices that offer some supplementary information and basic summaries about all the projects that were initiated.

Wang, Ranshi = 透明电解质/氧化锌异质结热稳定性的研究 / 王然石. / Thesis (M.Phil.)--Chinese University of Hong Kong, 2007. / Includes bibliographical references (leaves 130-134). / Abstracts in English and Chinese. / Wang, Ranshi = Tou ming dian jie zhi/yang hua xin yi zhi jie re wen ding xing de yan jiu / Wang Ranshi. / Chapter I. --- Abstract / Chapter II. --- Acknowledgement / Chapter III. --- Table of contents / Chapter IV. --- List of figures / Chapter V. --- List of tables / Chapter 1 --- Introduction / Chapter 1.1 --- Motivations / Chapter 1.2 --- Outline of thesis / Chapter 2 --- Experimental Conditions and Techniques Used / Chapter 2.1 --- Sample preparation / Chapter 2.1.1 --- Radio frequency magnetic sputtering / Chapter 2.1.2 --- ITO glass / Chapter 2.1.3 --- Thermal evaporation / Chapter 2.1.4 --- Thermal annealing / Chapter 2.2 --- Optical characterization of ZnO / Chapter 2.2.1 --- Photoluminescence (PL) measurement / Chapter 2.2.2 --- SEM and cathodoluminescence spectroscopy / Chapter 2.3 --- Time-of-FIight Secondary Ion Mass Spectroscopy (TOF-SIMS ) / Chapter 2.4 --- Electrical measurements / Chapter 3 --- Calibrations / Chapter 3.1 --- Sample Thickness / Chapter 3.2 --- Calibrations of cathodeluminescence measurements / Chapter 3.2.1 --- Probe current and specimen current / Chapter 3.2.2 --- Sample uniformity in CL measurement / Chapter 3.2.3 --- Mirror position / Chapter 3.2.4 --- Non-linear relation between CL emission and current / Chapter 3.2.5 --- CL band-edge emission stability / Chapter 3.2.6 --- Effect of magnification / Chapter 3.2.7 --- Effect of electron beam shift / Chapter 3.2.8 --- Conclusions / Chapter 3.3 --- C-V measurement / Chapter 4 --- Experimental Results and Data Analysis / Chapter 4.1 --- Optical properties / Chapter 4.1.1 --- Luminescence of ZnO / Chapter 4.1.2 --- Light emitting thermal stability of A10x (MgO) capped ZnO film / Chapter 4.1.2.1 --- Emission degradations in annealing treatment by PL / Chapter 4.1.2.2 --- Evidence about the interface degradation / Chapter 4.1.2.3 --- CL studies of the emission from sample surface / Chapter 4.2 --- Secondary Ion Mass Spectroscopy (SIMS) studies of AIOx-capped ZnO / Chapter 4.2.1 --- Data processing / Chapter 4.2.2 --- Diffusion width / Chapter 4.3 --- Simulation of Zn out diffusion to the dielectric layer / Chapter 4.3.1 --- Structure and assumptions / Chapter 4.3.2 --- Calculations of diffusion by Fick's Law / Chapter 4.3.3 --- Simulation of PL reduction from diffusion / Chapter 4.3.4 --- Short-time PL / Chapter 4.4 --- Simulation of defects generation in emission reduction process / Chapter 4.4.1 --- Some calculations of continuity equation / Chapter 4.4.2 --- First order equation for defect generation / Chapter 4.5 --- Electrical measurements / Chapter 4.5.1 --- Theory of C-V measurement for MOS structure / Chapter 4.5.1.1 --- MOS Structure / Chapter 4.5.1.2 --- Discussions about surface charge and energy level in C-V experiments of MOS / Chapter 4.5.1.3 --- Useful formulations / Chapter 4.5.2 --- Experimental results of C-V and parameter extraction / Chapter 4.5.2.1 --- Effect of series resistance correction / Chapter 4.5.2.2 --- Effect of thermal annealing to C-V curves on dielectric/ZnO/ITO / Chapter 4.5.2.3 --- Doping concentration (ND) / Chapter 4.5.2.4 --- Discussion about the fixed and mobile charge / Chapter 4.5.3 --- Simulation of C-V relation in dielectric/ZnO / Chapter 4.5.4 --- Current-voltage (I-V) measurements / Chapter 4.5.5 --- Conductance-voltage measurements (G-V) and interface trap density / Chapter 4.5.6 --- DLTS measurements for extracting interface trap density / Chapter 5 --- Discussions and Conclusion / Chapter 5.1 --- Mechanism / Chapter 5.2 --- Conclusions / Chapter 5.3 --- Future plan / Chapter 6 --- References

by Ho Lai-Ching. / Year shown on spine: 1997. / Thesis (M.Phil.)--Chinese University of Hong Kong, 1996. / Includes bibliographical references (leaves xiii-xvii). / ACKNOWLEDGMENT --- p.I / ABSTRACT --- p.II / CONTENTS --- p.IV / FIGURE CAPTIONS --- p.VI / TABLE CAPTIONS --- p.IX / Chapter CHAPTER 1 --- INTRODUCTION --- p.1 / Chapter CHAPTER 2 --- A BRIEF REVIEW OF ION BEAM SYNTHESIS OF SiC --- p.5 / Chapter CHAPTER 3 --- SAMPLE PREPARATION AND MEASUREMENT METHODS --- p.9 / Chapter 3.1 --- Sample Preparation --- p.9 / Chapter 3.1.1 --- MEVVA Implantation --- p.9 / Chapter 3.1.2 --- Implantation Conditions --- p.12 / Chapter 3.2 --- Characterization Methods --- p.14 / Chapter 3.2.1 --- Spreading Resistance Profiling (SRP) --- p.14 / Chapter 3.2.1.1 --- Principle of SRP Measurement Method --- p.14 / Chapter 3.2.1.2 --- Sample Preparation and Measurement --- p.15 / Chapter 3.2.2 --- Current-Voltage Measurement (I-V) --- p.17 / Chapter 3.2.3 --- Infrared Transmission Measurements (IR) --- p.19 / Chapter CHAPTER 4 --- RESULTS AND DISCUSSIONS --- p.20 / Chapter 4.1 --- Results of SRP Measurements --- p.20 / Chapter 4.2 --- Results of I-V Measurements --- p.27 / Chapter 4.3 --- Results of IR Measurements --- p.34 / Chapter 4.4 --- Discussions --- p.39 / Chapter 4.4.1 --- IR Absorption Results --- p.39 / Chapter 4.4.2 --- Hot Probe Measurement Results --- p.45 / Chapter 4.4.3 --- SRP Depth Profiles --- p.50 / Chapter 4.4.4 --- Current Transport Mechanism --- p.55 / Chapter 4.4.5 --- Ideality Factor and Transport Mechanisms --- p.76 / Chapter CHAPTER 5 --- CONCLUSIONS AND FUTURE WORKS --- p.85 / Chapter 5.1 --- Conclusions --- p.85 / Chapter 5.2 --- Future Works --- p.86 / APPENDIX --- p.i / BIBLIOGRAPHY --- p.xiii

The neutron and electron radiation effects in Ill-V compound semiconductor heterostructure devices are studied in this thesis. Three types of devices investigated are AlGaAs/GaAs high electron mobility transistors (HEMTs), AlGaAs/InGaAs/GaAs heterostructure insulated gate field effect transistors (HIGFETs), and InP/InCaAs/InGaAs single heterojunction bipolar transistors (SHBTs). HEMTs and HIGFETs are primarily investigated for neutron irradiation effects. Detailed optimized processing of HEMT devices is introduced. Numerical as well as analytical models that incorporate radiation induced degradation effects in HEMTs and HIGFETs are developed. The most prominent radiation effects appearing on both HEMT and HIGFET devices are increase of threshold voltage (V[subscript T]) and decrease of transconductance (g[subscript m]) as radiation dose increases. These effects are responsible for drain current degradation under given bias conditions after irradiation. From our experimental neutron irradiation study and our theoretical models, we concluded that threshold voltage increase is due to the radiation-induced acceptor-like (negatively charged) traps in the GaAs channel region removing carriers. The mobility degradation in the channel is responsible for g[subscript m] decrease. Series resistance increase is also related to carrier removal and mobility degradation. Traps introduced in the GaAs region affect the device performance more than the traps in the AlGaAs doped region. V[subscript T] and g[subscript m] of HIGFET devices are less affected by neutron radiation than they are in HEMTs. This difference is attributed to different shapes of the quantum well in the two devices. The main effects of electron and neutron irradiation of SHBTs are decrease of collector current (I[subscript c]), decrease of common-emitter DC gain, increase of the collector output conductance (��I[subscript c]/��V[subscript CE]), and increase of collector-collector offset voltage. The decrease of breakdown voltage of reverse biased base-emitter junction diode is responsible for increasing the output conductance after irradiation. Base-collector junction degradation also induces collector-emitter offset voltage increase. / Graduation date: 2003

This paper presents a new technique for the monolithic heterogeneous integration of compound semiconductor devices with silicon integrated circuits, and establishes the theoretical foundation for a key element of the process, tailored magnetic attraction and retention. It is shown how a patterned thin film of hard magnetic material can be used to engineer the attraction between the film and nanopills covered with a soft magnetic material. With a suitable choice of pattern, it is anticipated that it will be possible to achieve complete filling of recesses in the surface of fully-processed integrated circuit wafers, preparatory to subsequent processing to fabricate the nanopills into heterostructure devices integrated monolithically with the pre-existing electronics. / Singapore-MIT Alliance (SMA)

Thesis (M.S.)--Oregon State University, 2010. / Printout. Includes bibliographical references (leaves 97-109). Also available on the World Wide Web.

Thesis (Ph. D.)--University of Texas at Austin, 2001. / Vita. Includes bibliographical references. Available also from UMI/Dissertation Abstracts International.

We investigate the temperature and size distribution of Ag, Ge, CdSe and ZnS nanoparticles undergoing UV excimer laser pulses. A two laser pulse experiment is designed to monitor nanoparticle size before and after laser interaction. We study HRTEM images and measure the ablation and fluorescence spectra of particles before and after evaporation. Results show that the nanoparticle mean radius decreases from 3.4 ± 0.2 nm to 2.6 ± 0.2 nm, from 4.3 ± 0.1 nm to 3.5 ± 0.1 nm, and from 3.1 ± 0.2 nm to 2.6 ± 0.2 nm for Ag, Ge and CdSe, respectively. No ZnS nanoparticle size reduction was observed. Theoretical models for nanoparticles undergoing laser heating show that temperatures above the bulk and nanoparticle material melting point reduce the nanoparticles size by a factor of 0.3 and suggest recondensation before collection. For CdSe nanoparticles collected on dry substrates and solvents, blue shifted fluorescence (PL) peaks support the size reduction. / text