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The Global ETD Search service is a free service for researchers
to find electronic theses and dissertations. This service is
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Networked Digital Library of Theses and Dissertations.
Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
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Showing 1 to 2 of 2 (0.076 seconds)Spelling suggestions: "subject:"high boltage converter"" "subject:"high boltage konverter""
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Implementation of high voltage Silicon Carbide rectifiers and switchesBerthou, Maxime 18 January 2012 (has links) (PDF)
In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors.
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Implementation of high voltage Silicon Carbide rectifiers and switches / Conception et réalisation de composants unipolaires en Carbure de SiliciumBerthou, Maxime 18 January 2012 (has links)
Nous présentons dans ce document, notre étude de la conception et la réalisation de VMOS et de diodes Schottky et JBS en carbure de silicium. Ce travail nous a permis d'optimiser et de fabriquer des diodes utilisant une barrière Schottky en Tungsten de différentes tenues en tension entre 1,2kV et 9kV. De plus, notre étude du VMOS nous a permis d'identifier la totalité des problèmes auxquels nous faisons face. Ainsi, nous avons pu améliorer ces composants tout en essayant de nouveaux designs tels que le VIEMOS et l'intégration monolithique de capteurs de temperature et de courant. / In this document, we present ou study about the conception and realization of VMOS and Schottky and JBS Diodes on Silicon Carbide. This work allowed us optimize and fabricate diodes using Tungsten as Schottky barrier on both Schottky and JBS diodes of different blocking capability between 1.2kV and 9kV. Moreover, our study of the VMOS, by considering the overall fabrication process, has permitted to identify the totality of the problems we are facing. Thusly we could ameliorate the devices and try new designs as the VIEMOS or the monolithic integration of temperature and current sensors.
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