GaN has the potential to revolutionize the high power electronics industry, enabling high voltage applications and better power conversion efficiency due to its intrinsic material properties and newly available high purity bulk substrates. However, unintentional impurity incorporation needs to be reduced. This reduction can be accomplished by reducing the source of contamination and exploration of extreme growth conditions which reduce the incorporation of these contaminants. Newly available bulk substrates with low threading dislocations allow for better study of material properties, as opposed to material whose properties are dominated by structural and chemical defects. In addition, very thick films can be grown without cracking due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find growth conditions which reduces contamination without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of the intentional dopants. / Doctor of Philosophy / GaN is a compound semiconductor which has the potential to revolutionize the high power electronics industry, enabling new applications and energy savings due to its inherent material properties. However, material quality and purity requires improvement. This improvement can be accomplished by reducing contamination and growing under extreme conditions. Newly available bulk substrates with low defects allow for better study of material properties. In addition, very thick films can be grown without cracking on these substrates due to exact lattice and thermal expansion coefficient match. Through chemical and electrical measurements, this work aims to find optimal growth conditions for high purity GaN without a severe impact on growth rate, which is an important factor from an industry standpoint. The proposed thicknesses of these devices are on the order of one hundred microns and requires tight control of impurities.

Die Elektrifizierung unserer Gesellschaft verlangt eine stetige Innovation von elektrischen Bauteilen. Ein vielversprechendes Material ist der transparente Halbleiter ß-Ga2O3. Mit seiner hohen Bandlücke von 4,8 eV bietet das Material gute Voraussetzungen, um im Bereich der Hochleistungselektronik verwendet zu werden. In dieser Arbeit wurden die elektrischen und thermischen Leitungseigenschaften von ß-Ga2O3 untersucht. Dabei werden die Streumechanismen, die den Transport von Elektronen oder Phononen bestimmen, diskutiert. Es wurde eine Abhängigkeit der Ladungsträgerbeweglichkeit von der Schichtdicke der leitfähigen homoepitaktischen ß-Ga2O3 Schichten festgestellt. Während in Volumenproben und dicken Schichten (>150 nm) eine Kombination aus Streuung von Elektronen an Phononen und an ionisierten Störstellen den Transport dominiert, so spielen bei dünnen Schichten Grenzflächeneffekte eine Rolle. Dieser Effekt konnte mit einer modifizierten Variante des Modells nach Bergmann beschrieben werden. Messungen der Wärmeleitfähigkeit haben deren aus der Literatur bekannte Anisotropie bei Raumtemperatur bestätigt. Die Wärmeleitfähigkeit steigt mit sinkender Temperatur, bis bei etwa 30 K ein Maximum von über 1000 W/(mK) erreicht wird. Anhand der mittleren freien Weglängen der Phononen konnte gezeigt werden, dass der Wärmetransport oberhalb von 80 K von Phonon-Phonon Umklappstreuung bestimmt wird. Zwischen 30 K und 80 K zeigt sich der Einfluss von Punktdefektstreuung. Unterhalb von 30 K zeigen sich die Einflüsse der Grenzflächen des Kristalls. Es findet ein Übergang des Phononentransports aus dem diffusiven Transportregime nach Fourier zum ballistischen Phononenstrahlungstransport nach Casimir und Majumdar statt. Eine Betrachtung dieser Materialparameter zeigt, dass ein möglicher Einsatzbereich für ß-Ga2O3 basierte Bauelemente mit flüssigem Stickstoff gekühlte Anwendungen sein könnten. Hier sind sowohl elektrische als auch thermische Parameter gut für hohe Stromdichten geeignet. / The electrification of our society demands continuous innovation in the field of electronic devices. One promising material is the transparent semiconductor ß-Ga2O3. With its high bandgap of 4.8 eV the material shows a great potential to be used in the field of high-power electronics. In this work, the electrical and thermal properties of ß-Ga2O3 have been investigated. The scattering mechanisms that determine the transport of electrons or phonons are discussed. A dependence of the charge carrier mobility on the thickness of the conductive homoepitaxial ß-Ga2O3 layers has been observed. While a combination of electron-phonon scattering (high temperatures) and scattering of electrons on ionized impurities (low temperatures) was shown to dominate the transport in bulk samples and bulk-like layers (>150 nm), in thin layers the influence of boundary scattering plays an increasing role. This effect could be described by a modified version of the Bergmann scattering model for an ideal thin film. Measurements of the thermal conductivity have reproduced the anisotropy previously reported in literature. The thermal conductivity rises with decreasing temperature until it reaches a maximum at approximately 30 K exceeding 1000 W/(mK). The phonon mean free path showed, that the phonon transport is dominated by phonon-phonon Umklapp-scattering above 80 K. Between 30 K and 80 K the influence of point defect scattering was visible. Below 30 K surface effects influence the thermal transport. A transition from diffusive phonon transport in the Fourier model into ballistic phonon-radiative transport described by Casimir and Majumdar takes place. A comparison of these material parameters with those of materials currently used in high-power electronics like SiC and GaN shows, that a possible application for ß-Ga2O3 are devices, that are cooled with liquid nitrogen. In this temperature range the electrical and thermal conductivity of are both well-suited for high current densities.