This investigation address the effect that pressure, p, and temperature, T, have on 4f-states of the rare-earth elements in the isostructural YbRh2Si2, EuCo2Ge2, and EuCu2Ge2 compounds. Upon applying pressure, the volume of the unit cell reduces, enforcing either the enhancement of the hybridization of the 4f-localized electrons with the ligand or a change in the valence state of the rare-earth ions. Here, we probe the effect of a pressure-induced lattice contraction on these system by means of electrical resistivity, from room temperature down to 100 mK. At ambient pressure, the electrical resistivity of YbRh2Si2 shows a broad peak at 130 K related to the incoherent scattering on the ground state and the excited crystalline electrical field (CEF) levels. At T_N = 70 mK, YbRh2Si2 undergoes a magnetic phase transition. Upon applying pressure up to p_1 = 4 GPa , T_N increases monotonously while the peak in the electrical resistivity is shifted to lower temperatures. For p < p_1 a different behavior is observed; namely, T_N depends weakly on the applied pressure and a decomposition of the single peak in the electrical resistivity into several shoulders and peaks occurs. Above p_2 = 9 GPa, the electrical resistivity is significantly reduced for T < 50 K and this process is accompanied by a sudden enhancement of T_N. Thus, our results confirm the unexpected behavior of the magnetization as function of pressure reported by Plessel et al. The small value of the magnetic ordering temperature for p < p_2 and the strength of the mechanism that leads to the peaks and shoulders in the electrical resistivity suggest that the f-electrons are still screened by the conduction electrons. Therefore, the observed behavior for pressures lower than p_2 might be a consequence of the competition of two different types of magnetic fluctuations (seemingly AFM and FM). Furthermore, the results suggest that a sudden change of the CEF scheme occurs at pressures higher than p_1, which would have an influence on the ground state. Additionally, a comparison of the pressure dependent features in the electrical resistivity of YbRh2Si2 with similar maxima in other isostructural YbT2X2 (T = transition metal; X = Si or Ge) compounds was performed. For the comparison, a simple relation that considers the Coqblin-Schrieffer model and the hypothesis of Lavagna et al. is proposed. A systematic behavior is observed depending on the transition metal; namely, it seems that the higher the atomic radii of the T-atom the smallest the pressure dependence of the maximum in the electrical resistivity, suggesting a weaker coupling of localized- and conduction-electrons. It is also observed that an increase in the density of conduction electrons reduces the pressure dependence of the characteristic Kondo temperature. The mechanism responsible for the sudden enhancement of T_N in YbRh2Si2 at about p_2 is still unknown. However two plausible scenarios are discussed. The Eu-ions in EuCo2Ge2 and EuCu2Ge2 have a divalent character in the range 100 mK < T < 300 K. Therefore, these systems order magnetically at T_N = 23 K and T_N = 12 K, respectively. The studies performed on EuCo2Ge2 and EuCu2Ge2 as a function of pressure suggest that a change to a non-magnetic trivalent state of the Eu-ions might occur at zero temperature for pressures higher than 3 GPa and 7 GPa, respectively. A common and characteristic feature on EuCo2Ge2 and EuCu2Ge2 is the absence of a clear first order transition from the divalent to the trivalent state of the Eu-ions at finite temperature for p > 3 GPa and for p > 7 GPa, respectively. In other isostructural Eu-based compounds, a discontinuous and abrupt change in the thermodynamic and transport properties associated to the valence transition of the Eu-ions is typically observed at finite temperatures. In contrast, the electrical resistivity of EuCo2Ge2 and EuCu2Ge2 changes smoothly as a function of pressure and temperature. The analysis of the the electrical resistivity of EuCo2Ge2 suggest that a classical critical point might be close to the AFM-ordered phase, being a hallmark of this compound. The overall temperature dependence of the the electrical resistivity of EuCo2Ge2 changes significantly at 3 GPa; therefore, it seems that the system suddenly enters to a T-dependent valence-fluctuating regime. Additionally, the pressure-dependent electrical-resistivity isotherms show a step-like behavior. Thus, it is concluded that discontinuous change of the ground state might occur at 3 GPa. The electrical resistivity of EuCu2Ge2 at high pressure is characterized by a negative logarithmic T-dependence in the pressure range 5 GPa < p < 7 GPa for T > T_N and by a broad peak in the pressure dependent residual resistivity, whose maximum is located at 7.3 GPa. The first behavior resembles the incoherent scattering process typical for an exchange coupling mechanism between the localized electrons and the ligand. This and the peak effect in the local 4f susceptibility observed in NMR measurements are consistent with such a coupling mechanism. Thus, it would be for the first time that a dense Eu-based compound like EuCu2Ge2 show such a behavior. Combining the results of the experiment performed at high pressures on EuCu2Ge2 with the studies performed in the EuCu2(Ge1-xSix)2 series, a crossover from an antiferromagnetically ordered state into a Fermi-liquid state for pressures higher than 7.3 GPa may be inferred from the analysis. Therefore, it may be possible that the sudden depopulation of 4f-level occur mediated by quantum fluctuation of the charge due to a strong Coulomb repulsion between the localized-electrons and the ligand. This phenomenon would explain the broad peak in the residual resistivity. To our knowledge, this would be the first Eu-based compound, isostructural to ThCr2Si2, that show such a transition as function of pressure at very low temperatures.

This investigation address the effect that pressure, p, and temperature, T, have on 4f-states of the rare-earth elements in the isostructural YbRh2Si2, EuCo2Ge2, and EuCu2Ge2 compounds. Upon applying pressure, the volume of the unit cell reduces, enforcing either the enhancement of the hybridization of the 4f-localized electrons with the ligand or a change in the valence state of the rare-earth ions. Here, we probe the effect of a pressure-induced lattice contraction on these system by means of electrical resistivity, from room temperature down to 100 mK. At ambient pressure, the electrical resistivity of YbRh2Si2 shows a broad peak at 130 K related to the incoherent scattering on the ground state and the excited crystalline electrical field (CEF) levels. At T_N = 70 mK, YbRh2Si2 undergoes a magnetic phase transition. Upon applying pressure up to p_1 = 4 GPa , T_N increases monotonously while the peak in the electrical resistivity is shifted to lower temperatures. For p < p_1 a different behavior is observed; namely, T_N depends weakly on the applied pressure and a decomposition of the single peak in the electrical resistivity into several shoulders and peaks occurs. Above p_2 = 9 GPa, the electrical resistivity is significantly reduced for T < 50 K and this process is accompanied by a sudden enhancement of T_N. Thus, our results confirm the unexpected behavior of the magnetization as function of pressure reported by Plessel et al. The small value of the magnetic ordering temperature for p < p_2 and the strength of the mechanism that leads to the peaks and shoulders in the electrical resistivity suggest that the f-electrons are still screened by the conduction electrons. Therefore, the observed behavior for pressures lower than p_2 might be a consequence of the competition of two different types of magnetic fluctuations (seemingly AFM and FM). Furthermore, the results suggest that a sudden change of the CEF scheme occurs at pressures higher than p_1, which would have an influence on the ground state. Additionally, a comparison of the pressure dependent features in the electrical resistivity of YbRh2Si2 with similar maxima in other isostructural YbT2X2 (T = transition metal; X = Si or Ge) compounds was performed. For the comparison, a simple relation that considers the Coqblin-Schrieffer model and the hypothesis of Lavagna et al. is proposed. A systematic behavior is observed depending on the transition metal; namely, it seems that the higher the atomic radii of the T-atom the smallest the pressure dependence of the maximum in the electrical resistivity, suggesting a weaker coupling of localized- and conduction-electrons. It is also observed that an increase in the density of conduction electrons reduces the pressure dependence of the characteristic Kondo temperature. The mechanism responsible for the sudden enhancement of T_N in YbRh2Si2 at about p_2 is still unknown. However two plausible scenarios are discussed. The Eu-ions in EuCo2Ge2 and EuCu2Ge2 have a divalent character in the range 100 mK < T < 300 K. Therefore, these systems order magnetically at T_N = 23 K and T_N = 12 K, respectively. The studies performed on EuCo2Ge2 and EuCu2Ge2 as a function of pressure suggest that a change to a non-magnetic trivalent state of the Eu-ions might occur at zero temperature for pressures higher than 3 GPa and 7 GPa, respectively. A common and characteristic feature on EuCo2Ge2 and EuCu2Ge2 is the absence of a clear first order transition from the divalent to the trivalent state of the Eu-ions at finite temperature for p > 3 GPa and for p > 7 GPa, respectively. In other isostructural Eu-based compounds, a discontinuous and abrupt change in the thermodynamic and transport properties associated to the valence transition of the Eu-ions is typically observed at finite temperatures. In contrast, the electrical resistivity of EuCo2Ge2 and EuCu2Ge2 changes smoothly as a function of pressure and temperature. The analysis of the the electrical resistivity of EuCo2Ge2 suggest that a classical critical point might be close to the AFM-ordered phase, being a hallmark of this compound. The overall temperature dependence of the the electrical resistivity of EuCo2Ge2 changes significantly at 3 GPa; therefore, it seems that the system suddenly enters to a T-dependent valence-fluctuating regime. Additionally, the pressure-dependent electrical-resistivity isotherms show a step-like behavior. Thus, it is concluded that discontinuous change of the ground state might occur at 3 GPa. The electrical resistivity of EuCu2Ge2 at high pressure is characterized by a negative logarithmic T-dependence in the pressure range 5 GPa < p < 7 GPa for T > T_N and by a broad peak in the pressure dependent residual resistivity, whose maximum is located at 7.3 GPa. The first behavior resembles the incoherent scattering process typical for an exchange coupling mechanism between the localized electrons and the ligand. This and the peak effect in the local 4f susceptibility observed in NMR measurements are consistent with such a coupling mechanism. Thus, it would be for the first time that a dense Eu-based compound like EuCu2Ge2 show such a behavior. Combining the results of the experiment performed at high pressures on EuCu2Ge2 with the studies performed in the EuCu2(Ge1-xSix)2 series, a crossover from an antiferromagnetically ordered state into a Fermi-liquid state for pressures higher than 7.3 GPa may be inferred from the analysis. Therefore, it may be possible that the sudden depopulation of 4f-level occur mediated by quantum fluctuation of the charge due to a strong Coulomb repulsion between the localized-electrons and the ligand. This phenomenon would explain the broad peak in the residual resistivity. To our knowledge, this would be the first Eu-based compound, isostructural to ThCr2Si2, that show such a transition as function of pressure at very low temperatures.