Engineers know well from an early point in their training the trials and tribulations of having to make design tradeoffs in order to optimize one performance parameter for another. Discovering tradeoff conditions that result in the elimination of a loss associated with the enhancement of some other parameter (an improvement over a typical tradeoff), therefore, ushers in a new paradigm of design in which the constraints which are typical of the task at hand are alleviated. We call such a design paradigm “tuning” as opposed to “trading off”, and this is the central theme of this work. We investigate two types of microwave electronic devices, namely GaN-based heterostructure field effect transistors (HFETs) and tunable ferroelectric-ferrite-based microwave phase shifters. The “tuning” associated with these types of devices arises from the notion of an optimal 2DEG density, capable of achieving higher performance in terms of electron velocity and enhanced reliability in the case of the HFET, and the coupling of ferroelectric and ferrite materials in tunable microwave phase shifters, capable of achieving high differential phase shifts while at the same time mitigating the losses associated with impedance mismatching which typically arise when the phase is tuned. Promises and problems associated with HFET devices based on the intriguing InAlN/GaN material system will be described. We focus on the fundamental problem associated with the induction of the large density of carriers at the interface, namely the disintegration of an excess of longitudinal optical phonons (hot phonons) in the channel. We use microwave measurements in conjunction with stress tests to evidence the existence of an optimal 2DEG density wherein the hot phonon effect can be “tuned,” which allows for enhanced high frequency performance as well as device reliability. Next, we focus on the design, fabrication, and measurement of tunable phase shifters consisting of thin films of BaxSr1-xTiO3 (BST), which has the advantage of having high dielectric tunability as well as relatively low microwave loss. We discuss the design, fabrication, and measurement of a simple coplanar waveguide (CPW) type of phase shifter as well as a more complicated “hybrid” phase shifter consisting of a ferrite (YIG) in addition to BST. The use of such a bilayer allows one to “tune” the impedance of the phase shifters independently of the phase velocity through careful selection of the DC biasing magnetic fields, or alternatively through the use of an additional piezoelectric layer, bonded to YIG whose permeability can then be tuned through magnetostriction.

The unique properties, such as large direct bandgap, excellent thermal stability, high μH × ns, of III-nitrides make them ideal candidates for both optoelectronic and high-speed electronic devices. In the past decades, great success has been achieved in commercialization of GaN based light emitting diodes (LEDs) and laser diodes (LDs). However, due to the lack of native substrates, thin films grown on sapphire or SiC substrates have high defect densities that degrade the device performance and reliability. Conventional epitaxy lateral overgrowth (ELO) can reduce dislocation densities down to ∼10-6 cm-2 in the lateral growth area, but requires ex situ photolithography steps. Hence, an in situ method using a SiNx interlayer (nano-scale ELOG) has emerged as a promising technique. The GaN templates prepared by this method exhibit a very low dislocation density (low-10-7 cm-2) and excellent optical and electrical properties. As a cost, such high quality GaN templates containing SiN, nanonetworks are not suitable for heterojunction field effect transistor (HFET) applications due to degenerate GaN:Si layer which serves as parallel conduction channel. This dissertation discusses the growth of low dislocation density GaN templates, by using the in situ SiNx nanonetwork for conductive templates, and the AIN buffer for semi-insulating templates. On SiN x nanonetwork templates, double-barrier RTD and superlattice (SL) exhibited negative differential resistances. Moreover, the injection current of Blue LEDs (450 nm) was improved ∼30%. On semi-insulating GaN templates, nearly lattice matched AlInN/AIN/GaN HFETs were successfully demonstrated and exhibited ∼ 1600 cm2/Vs and 17 600 cm2/Vs Hall mobilities at 300 K and 10 K, respectively. Those mobility values are much higher than literature reports and indicate that high quality HFETs can be realized in lattice matched AlInN/AIN/GaN, thereby solving the strain related issue. The attempt to use InGaN as the 2DEG channel has also been successfully implemented. A Hall mobility (1230 cm2/Vs) was achieved in a 12 nm InGaN channel HFET with AlInGaN barrier, which demonstrates the viability of InGaN channel HFETs.

Cette thèse est consacrée à l’étude de la dynamique des porteurs de charges sous forte concentration. La méthode Monte Carlo « Full-Band » a été utilisée pour la modélisation du transport et la relaxtion des porteurs de charge dans les semi-conducteurs III-V (GaAs, InAs, GaSb, In0.53Ga0.47As et GaAs0.50Sb0.50). Les structures électroniques ont été calculées par la Méthode des Pseudo-potentiels Non-Locaux Empiriques, ce qui a notamment permis de traiter le cas de l’alliage ternaire GaAs0.50Sb0.50 dans une approche de type Cristal Virtuel, matériau qui souffre d’un manque de caractérisations expérimentales. Dans ces semi-conducteurs polaires fortement dopés, le couplage entre phonons optiques polaires et plasmons a été pris en compte via le calcul de la fonction diélectrique totale incluant les termes associés à l’amortissement dans le système phonon-plasmon auto-cohérents. Ce phénomène de couplage phonon-plasmon, est apparu primordial pour l’analyse de la mobilité des électrons dans GaAs, In0.53Ga0.47As et GaAs0.50Sb0.50 en fonction de la concentration en accepteurs. Dans des semi-conducteurs fortement photo-excités, la relaxation des électrons et des trous a été étudiée en tenant compte du chauffage de la population de phonon (qui ralentit la relaxation des porteurs) avec un modèle Monte Carlo dédié à la dynamique des phonons (Thèse de H. Hamzeh). L’étude a montré que le ralentissement de la relaxation dépend fortement des concentrations de porteurs photo-excités à cause du couplage phonon-plasmon dans ces matériaux. Les processus de génération et recombinaison de porteurs tels que l’absorption optique, la recombinaison radiative, l’ionisation par choc et les recombinaisons Auger, ont été implémentés. Les taux de génération et recombinaison associés sont calculés directement sur les distributions de porteurs modélisées, sans supposer des distributions à l’équilibre. Ces processus sont cruciaux pour l’optimisation de Cellules Solaires à Porteurs Chauds. Le photo-courant de ce type de cellule théorique à haut rendement de 3ème génération avec un absorbeur en In0.53Ga0.47As a été étudié. / The aim of this work is the study of charge carriers dynamic under high carrier concentration regimes. The « Full-Band » Monte Carlo method is used for charge carrier transport/relaxation modeling in III-V semiconductors (GaAs, InAs, GaSb, In0.53Ga0.47As and GaAs0.50Sb0.50). Electronic band structures are calculated with the Non-Local Empirical Pseudopotential Method which enables the study of ternary alloys within a Virtual Crystal approach. This method has been applied to In0.53Ga0.47As and GaAs0.50Sb0.50, the latter being a promising material for Heterojunction Bipolar Transistor applications though it lacks experimental characterizations. In highly doped polar semiconductors, the polar optical phonon – plasmon coupling is accounted for via the calculation of the total dielectric function including self-consistent damping parameters. This coupling appeared crucial for the calculation of minority electron mobilities in highly p-doped GaAs, In0.53Ga0.47As and GaAs0.50Sb0.50. In strongly photo-excited semiconductors, phonon population heating has been included in the study of electrons and holes relaxation. Hot phonon populations, that slow the charge carrier relaxation through the phonon bottleneck effect, have been dealt with a phonon dedicated Monte Carlo model (PhD H. Hamzeh). The study showed that carrier relaxation slowing depends strongly on the photo-excited carrier concentration because of phonon-plasmon coupling in those semiconductors. Charge carrier generation and recombination processes such as photon absorption, radiative recombination, impact ionization and Auger recombinations, have been implemented. The associated generation and recombination rates are directly calculated with the sampled carrier distribution. Thus, the use of coefficients and lifetimes is avoided, and non equilibrium regimes were modeled. Those processes are of prime importance for Hot Carrier Solar Cells optimization. The theoretical photo-current of this kind of 3rd generation solar cell with an In0.53Ga0.47As absorber have been studied.