An integrated circuit processing schedule is presented that enables fabrication of both high speed I²L gates and high voltage linear type transistors on the same silicon starting substrate material. This process design circumvents conflicting processing requirements normally encountered in considering an I²L/Linear compatible structure by providing two separate epitaxial thicknesses for the I²L and linear section of the chip. The electrical characteristics of the I²L cells and the linear transistors are presented to illustrate their dependence on the doping conditions and are shown to be in contrast to each other. As a consequence of the separate epitaxial thicknesses, independence of the processing constraints is achieved. Experimental results of linear transistors and I²L devices fabricated using this processing schedule are presented and compared to calculated and computer simulations. Modifications to the basic process design is shown possible and enhanced performance of I²L devices results.

Methods of noise coupling in high speed thick film circuits has been investigated. Parasitic coupling parameters have been experimentally determined for a variety of single and multilayer thick film layouts. In addition, the severity of the problem has been studied by measuring coupled noise induced on carefully constructed test cards. Curves are presented as an aid for predicting noise levels as a function of conductor spacing and signal edge speed. The measurements are discussed quantitatively and guidelines for the design of high speed thick film circuits are summarized.

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Thesis (M.S.)--Virginia Polytechnic Institute and State University, 1990. / Vita. Abstract. Includes bibliographical references (leaves 77-81). Also available via the Internet.

Thesis (M. Eng.)--Carleton University, 1994. / Also available in electronic format on the Internet.

Miniature Hybrid Microwave Integrated Circuits (MHMIC's) in conjunction with Monolithic MIC's (MMIC's) play an important role in modern telecommunication systems. Accurate, fast and reliable analysis tools are crucial to the design of MMIC's and MHMIC's. The space-spectral domain approach (SSDA) is such a numerically efficient method, which combines the advantage of the one-dimensional method of lines (MoL) with that of the one-dimensional spectral-domain method (SDM). In this dissertation, the basic idea of the SSDA is first introduced systematically. Then, a quasi-static deterministic variation of the SSDA is developed to analyze and design low dispersive 3-D MMIC's and MHMIC's. S-parameters and equivalent circuit elements for discontinuities are investigated. This includes air bridges, smooth transitions, open ends, step in width and gaps in coplanar waveguide (CPW) or microstrip type circuits. Experimental work is done to verify the simulation. The full-wave SSDA is a more generalized and field theoretically exact numerical tool to model also dispersive circuits. The new concept of self-consistent hybrid boundary conditions to replace the modal source concept in the feed line is used here. In parallel, a deterministic approach is developed. Scattering parameters for some multilayered planar discontinuities including dispersion effect are calculated to validate this method. / Graduate

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This report discusses the design, development and the fabrication of a power hybrid. Foldback current limiting which is self reseting is used whereby withstanding indefinitely a short circuit. Thermal design considerations and thermal analysis are described as well as stability analysis. The maximum current capability of this design is four amperes and forty watts can be dissipated in the power transistors over a wide range of temperatures.

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