Spelling suggestions: "subject:"aydrogen annealing"" "subject:"bydrogen annealing""
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Fundamental Study on Carrier Transport in Si Nanowire MOSFETs with Smooth Nanowire Surfaces / 表面平坦化処理を施したSiナノワイヤMOSFETにおけるキャリヤ輸送の基礎研究Morioka, Naoya 24 March 2014 (has links)
京都大学 / 0048 / 新制・課程博士 / 博士(工学) / 甲第18286号 / 工博第3878号 / 新制||工||1595(附属図書館) / 31144 / 京都大学大学院工学研究科電子工学専攻 / (主査)教授 木本 恒暢, 教授 白石 誠司, 准教授 浅野 卓 / 学位規則第4条第1項該当 / Doctor of Philosophy (Engineering) / Kyoto University / DFAM
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Hydrogen storage in high surface area graphene scaffoldsKlechikov, Alexey, Mercier, Guillaume, Sharifi, Tiva, Baburin, Igor A., Seifert, Gotthard, Talyzin, Alexandr V. 19 December 2019 (has links)
Using an optimized KOH activation procedure we prepared highly porous graphene scaffoldmaterials with SSA values up to 3400m² g⁻¹ and a pore volume up to 2.2 cm³ gˉ¹, which are among the highest for carbon materials. Hydrogen uptake of activated graphene samples was evaluated in a broad temperature interval (77–296 K). After additional activation by hydrogen annealing the maximal excess H2 uptake of 7.5 wt% was obtained at 77 K. A hydrogen storage value as high as 4 wt% was observed already at 193 K (120 bar H₂), a temperature of solid CO₂, which can be easily maintained using common industrial refrigeration methods.
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