ITC/USA 2005 Conference Proceedings / The Forty-First Annual International Telemetering Conference and Technical Exhibition / October 24-27, 2005 / Riviera Hotel & Convention Center, Las Vegas, Nevada / The ability to accurately measure the temperature of different materials has always been a challenge for the Instrumentation Engineer. The use the classic contact type temperature detector such as thermocouples or RTD’s (Resistance Temperature Detectors) has not always shown to be the best approach to obtain the expected measurement. When not used carefully in closed environments, thermocouples and RTD’s could report the environmental temperature rather than the temperature from the product under examination. They are also temperature limited and when needed for applications above those limits, very expensive and low reliable materials are necessary to do the job. The use of non-contact thermometers has become the preferred choice for such applications. They have also come as a solution for the difficulties involved in the temperature measurements of moving targets. The industry has used portable and spot type infrared thermometers for some time, but the demand for better and more precise measurements has brought an incredible number of new products to the market. By means of advanced electronics and new software developments these products are used to cope with the difficulties of acquiring challenging measurements. Some of the same demands have made necessary the use of non-contact temperature measurement devices on aircraft instrumentation applications. The use of these capabilities has allowed the data acquisition community to get valuable data that was very difficult if not impossible to obtain before. In spite of all these facts, this promising emerging technology demands very careful attention before it is put to good use. The many products and solutions available do not accurately address every problem and the selection of the wrong technology for a specific task can prove to be fatal. The use of non-contact temperature devices is not an easy “off the shelf” pick but rather an option that demands knowledge of the infrared measurement theory as well as a complete understanding of the material under observation. The intention of this paper is to provide a practical understanding on the non-contact temperature measurement methods to the Aircraft Instrumentation Engineer who has not benefited from the use of this exiting technology.

No description available.

[Truncated abstract] Infrared radiation detectors find application in a wide range of military and civilian applications: for example, target identification, astronomy, atmospheric sensing and medical imaging. The greatest sensitivity, response speed, and wavelength range is offered by infrared detectors based on HgCdTe semiconductor material, the growth and characterisation of which is the subject of this thesis. Molecular Beam Epitaxy (MBE) is a versatile method of depositing layers of semiconductor material on a suitable crystalline substrate. In particular, MBE facilitates the growth of multilayer structures, thus allowing bandgap engineered devices to be realised. By modulating the bandgap within the device structure it is possible to improve the sensitivity or increase the operating temperature of photodetectors when compared to devices fabricated on single layer material. Furthermore, dual-band detectors may be fabricated using multi-layered HgCdTe material. The bulk of this thesis is concerned with the development of the MBE process for multilayer growth, from modelling of the growth process to characterisation of the material produced, and measurement of photoconductive devices fabricated on these wafers. In this thesis a previously published model of HgCdTe growth by MBE is reviewed in detail, and is applied to the growth of double layer heterostructures in order to determine the optimum method of changing the mole fraction between layers. The model has been used to predict the change in the temperature of the phase limit when the mole fraction and growth rate change suddenly as is the case during growth of an abrupt heterostructure. Two options for growth of an abrupt heterostructure were examined (a) modulating the CdTe flux and (b) modulating the Te flux. The change in the phase limit temperature between the layers was calculated as being 4:1±C for option (a) and 5:2±C for option (b) when growing a Hg(0:7)Cd(0:3)Te/Hg(0:56)Cd(0:44)Te heterostructure

Thesis (Ph.D.)--University of Western Australia, 2005.

Thesis (M.S.)--University of Wisconsin--Madison, 1965. / eContent provider-neutral record in process. Description based on print version record. Bibliography: l. 48.

Thesis (Ph. D.)--University of Wisconsin--Madison, 1966. / Typescript. Vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references.

Thesis (M.S.)--University of Wyoming, 2008. / Title from PDF title page (viewed on August 3, 2009). Includes bibliographical references (p. 60-64).

Thesis (Ph. D.)--University of Wisconsin--Madison, 1964. / Typescript. Includes abstract, computer source code, and vita. eContent provider-neutral record in process. Description based on print version record. Includes bibliographical references (leaves 328-337).

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