In this work, a quantum well intermixing(QWI) technology, called impurity free vacancy diffusion(IFVD), is used to do the bandgap engineering in an optoelectronic monolithic integration. The monolithic integration of SOAs and EAMs is taken as an example. By IFVD, the transition energy levels of EAM quantum wells can be shifted to shorter wavelength region, while SOA quantum wells are kept the same. Therefore, the overall SOA-integrated EAM efficiency can be improved. We use dielectric film¡XSiO2 and Si3N4 to control the impurity free vacancy diffusion, both of these two dielectric layer will induce stress on the wafer, but they will come to the totally different result base on the difference atom chemistry with the substrate. Using Ga atom diffusion into SiO2 to relax stress, the IFVD will be operated to enhance quantum well intermixing, leading to energy bang transition change. On the other hand, with Si3N4 film, no significant intermixing is observed, implying atom chemistry dominates the whole process. Also, a super critical fluid technique by H2O2 is also employed to further improving SiO2 quality, a as large as 180nm blue shift is obtained, further improving such mechanism. Through difference properties between SiO2 and Si3N4 dielectric layers, different bandgap transitions in one single chip can be controlled in an area of 30£gm¡Ñ50£gm, leading to a planar bandgap engineering. Use these techniques, an EAM-SOA integration is designed and fabricated, obtaining an wavelength offset of 40nm with good quality of material structure. In the future, we can use this technique on large scale chip, tuning the bandgap to make photonic integration circuit without re-growth.

The objective of this study is to understand the petrographical, mineralogical and geochemical characteristics of Messinian (Upper Miocene) gypsum occurence in Polatli Sazilar region, Ankara and to determine the impurities associated with gypsum. Moreover, it is aimed to interpret the usability of this raw material with impurities in plaster and plasterboard production based on industrial standards. Based on petrographical study, the first variety of gypsum which have different physical properties is white massive, micro crystalline, and translucent gypsum. Prismatic, transparent, idiomorphic and cleavage dominated selenite is the second variety. The gypsum rock is also identified that it is composed of sand sized selenite crystals and gypsum grains in a calcite and clay rich matrix. These impurity minerals also observed in thin beds alternating with gypsum. Scanning electron microscopic (SEM) studies are conducted to determine the relationship between the impurity mineral, gypsum and the selenite. X-ray diffractometry (XRD) studies were used to identify the type of clay minerals. In the samples, Ca-smectite is the essential impurity clay mineral. Rarely, mixed layer of illite-smectite is also identified. Geochemical studies also shows that as the amount of clay impurity increases, MgO, Al2O3, Fe2O3, Na2O, K2O (wt%) increases with decreasing SO3 (wt%). On the other hand, impurity of calcite controls the CaO (wt%) content in varying amounts. Five different groups of samples indicating different abundance of clay and calcite impurities are interpreted. The clay rich samples are enriched, in general, in vanadium, nickel, copper and chromium.

This thesis deals with infrared studies of impurity states, ultrafast carrier dynamics as well as coherent intersubband polarizations in semiconductor quantum structures such as quantum wells and superlattices, based on the GaAs/AlGaAs material system. In the first part it is shown that the 2pz confined impurity state of a semiconductor quantum well develops into an excited impurity band in the case of a superlattice. This is studied by following theoretically the transition from a single to a multiple quantum well or superlattice by exactly diagonalizing the three-dimensional Hamiltonian for a quantum well system with random impurities. Intersubband absorption experiments, which can be nearly perfectly reproduced by the theory, corroborate this interpretation, showing that at low temperatures in the low doping density regime all optical transitions originate from impurity transitions. These results also require reinterpretation of previous experimental data. The relaxation dynamics of interminiband transitions in doped GaAs/AlGaAs superlattices in the mid-IR are studied. This involves single-color pump-probe measurements to explore the dynamics at different wavelengths, which is performed with the Rossendorf freeelectron laser (FEL), providing picosecond pulses in a range from 3-200 µm and are used for the first time within this thesis. In these experiments, a fast bleaching of the interminiband transition is observed followed by thermalization and subsequent relaxation, whose time constants are determined to be 1-2 picoseconds. This is followed by an additional component due to carrier cooling in the lower miniband. In the second part, two-color pump-probe measurements are performed, involving the FEL as the pump source and a table-top broad-band tunable THz source for probing the transmission changes. These measurements allow a separate specification of the cooling times after a strong excitation, exhibiting time constants from 230 ps to 3 ps for different excitation densities and miniband widths. In addition, the dynamics of excited electrons within the minibands is explored and their contribution quantitatively extracted from the measurements. Intersubband absorption experiments of photoexcited carriers in single quantum well structures, measured directly in the time-domain, i.e. probing coherently the polarization between the first and the second subband, are presented. From the data we can directly extract the density and temperature dependence of the intersubband dephasing time between the two lowest subbands, ranging from 50 up to 400 fs. This all optical approach gives us the ability to tune the carrier concentration over an extremely wide range which is not accessible in a doped quantum well sample. By varying the carrier density, many-body effects such as the depolarization and their influence on the spectral position as well as on the lineshape on the intersubband dephasing are studied. Also the difference of excitonic and free-carrier type excitation is discussed, and indication of an excitonic intersubband transition is found.

The spectroscopy of wide-bandgap fluoride materials doped with divalent ytterbium is presented. The structure of impurity-trapped excitons is explored, vacuum ultraviolet excitation is used to investigate the transfer processes between excitations, and the effect of confinement on self-trapped excitons is studied. The excited-state structure of impurity-trapped excitons is measured in the multisite system NaMgF₃:Yb²⁺. A two-colour ultraviolet-infrared pulsed photoluminescence enhancement technique is employed to probe the interlevel transitions and dynamics of impurity-trapped excitons in doped insulating phosphor materials. NaMgF₃:Yb²⁺ exhibits emission from two charge-compensation centres with peaks at 22 300 cm⁻¹ (448 nm) and 24 000 cm⁻¹ (417 nm). The observed photoluminescence enhancement is caused by a combination of intra-excitonic excitation and electron trap liberation. The electron traps are inferred to have a depth of approximately 800 cm⁻¹. Time-resolved VUV spectroscopic studies of emission and excitation spectra of CaF₂:Yb, NaMgF₃Yb and MgF₂:Yb are presented to investigate excitation and relaxation mechanisms of both impurity-trapped excitons and intrinsic excitons in each fluoride host. Host-to-impurity energy transfer mechanisms leading to formation of impurity-trapped excitons are discussed. The 4f¹⁴ → 4f¹³5d CaF₂:Yb²⁺ absorption bands are successfully modeled with a semi-empirical effective Hamiltonian calculation for NaMgF₃:Yb²⁺ and MgF₂:Yb²⁺. The excitation and emission spectra of all studied materials are compared. Results on VUV spectroscopy of 3 and 5 monolayer CdF₂–CaF₂ superlattices show the change in optical behaviour of the self-trapped exciton in CdF₂ when it is confined and give an indication of the radius of the exciton. The decay of the emission is modeled with three components, corresponding to three self-trapped exciton states. Results on the VUV spectroscopy of CdF₂–CaF₂ superlattices show that the confinement effect seems to equally influence the energy of excitonic and bandgap absorption in 3 and 5 monolayer superlattices. At the same time, as the self-trapped exciton is more confined, the emission is blue-shifted by 1600 cm⁻¹ indicating that the effective excitonic radius is about three monolayers.

The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.

Crystallization is a key unit operation used for obtaining purified products by many process industries. The key properties of the crystalline products, such as size and shape distribution, purity and polymorphic form are controlled by the crystallization process. All these properties impact significantly the downstream operations such as drying or filtration. Therefore, monitoring and controlling this process is fundamental to ensure the quality of the final product. Process analytical technology (PAT) brings numerous new methods and opportunities in the process analytics and real time process monitoring systems, which can be integrated into the control algorithm and provide high level optimal control strategies as well as deeper understanding of the process. Process monitoring helps develop mathematical models which can, in one hand, help in better understanding the processes and consecvently the development and application of advanced control methods in order to achieve better product quality. In this work, image processing and image analysis based direct nucleation control (IA-DNC) is developed in order to investigate the evolution of the crystal properties, such as crystal size, and crystal shape distribution. The IA-DNC approach is also compared to alternative DNC techniques, in which particle number were measured by Focused Beam Reflectance Measurement (FBRM) in order to control crystal size. A control approach is introduced that control the nucleation and disappearance of crystals during cooling and heating segments related to the changes of the number of counts (measured by Particle Vision Measurment, so called PVM or combination of FBRM and PVM). The approach was applied to investigate crystallization of compounds with different behavior: potassium dihydrogen phosphate (KDP) water, contaminated KDP -water and Ascorbic acid water systems. The results demonstrate the application of imaging technique for model-free feedback control for tailoring crystal product properties. The second main aim of the thesis is to investigate and control crystallization processes in impure media in the presence of multiple impurities, with an impact on the crystal shape via growth kinetics. The broad impact of the crystal growth modifiers (impurities) on the growth kinetics is observed in real time by using in situ video imaging probe and real-time image analysis. A morphological population balance model is developed, which incorporates a multi-site, competitive adsorption mechanism of the impurities on the crystal faces. The kinetic parameters of primary nucleation, growth and impurity adsorption for a model system of potassium dihydrogen phosphate crystallization in water in the presence of two impurities, were estimated and validated with experimental results. It was demonstrated that the model can be used to describe the dynamic evolution of crystal properties, such as size and aspect ratio during crystallization for different impurity profiles in the system. Manual, feedback and hybrid feedback-feedforward control techniques are developed and investigated numerically for continuous processes, while model-based and model-free control approach for crystal shape are developed for batch processes. The developed morphological population balance model is implemented and applied in the model-based control approaches, which are suitable to describe multicomponent adsorption processes and their influence on the crystal shape. Case studies show the effectiveness of crystal growth modifiers based shape control techniques. Comparison of different control approaches shows the effectiveness of the techniques. The third part of the thesis deals with purification of crystals when adsorption of impurities on crystal surfaces and its incorporation into crystals are considered. A purification method, called competitive purity control (CPC) is proposed and investigated. A morphological population balance model, including nucleation, growth and competitive impurity adsorption kinetics is developed to describe the case when multiple impurities can adsorb competitively on the crystal surface. The model is also combined with liquid phase chemical reaction model, in order to investigate the purity control case when an additive is introduced in the system that reacts with the impurity forming a non-adsorbing reaction product. Both competitive purity control approaches proposed: the adsorption based competitive purity control (A-CPC) and the reaction based competitive purity control (R-CPC); are investigated using detailed numerical simulations then compared with the alternative widely used purification method, called recrystallization. In the last contribution chapter, an integrated process optimization of a continuous chemical reactor and crystallizer is performed and studied numerically. The purpose of this study is to show the way in which the byproduct produced in the chemical reactor may affect the crystallization process and how its negative effect can be reduced by applying integrated process optimization. Sensitivity analysis of the system was performed by considering the flow rate and the concentration of substances in the input stream of the chemical reactor as manipulated process variables. Model based integrated process optimization and the sensitivity analysis in order to obtain improved quality product in terms of crystal size, shape and purity.

abstract: Interstitial impurity atoms can significantly alter the chemical and physical properties of the host material. Oxygen impurity in HCP titanium is known to have a considerable strengthening effect mainly through interactions with dislocations. To better understand such an effect, first the role of oxygen on various slip planes in titanium is examined using generalized stacking fault energies (GSFE) computed by the first principles calculations. It is shown that oxygen can significantly increase the energy barrier to dislocation motion on most of the studied slip planes. Then the Peierls-Nabbaro model is utilized in conjunction with the GSFE to estimate the Peierls stress ratios for different slip systems. Using such information along with a set of tension and compression experiments, the parameters of a continuum scale crystal plasticity model, namely CRSS values, are calibrated. Effect of oxygen content on the macroscopic stress-strain response is further investigated through experiments on oxygen-boosted samples at room temperature. It is demonstrated that the crystal plasticity model can very well capture the effect of oxygen content on the global response of the samples. It is also revealed that oxygen promotes the slip activity on the pyramidal planes. The effect of oxygen impurity on titanium is further investigated under high cycle fatigue loading. For that purpose, a two-step hierarchical crystal plasticity for fatigue predictions is presented. Fatigue indicator parameter is used as the main driving force in an energy-based crack nucleation model. To calculate the FIPs, high-resolution full-field crystal plasticity simulations are carried out using a spectral solver. A nucleation model is proposed and calibrated by the fatigue experimental data for notched titanium samples with different oxygen contents and under two load ratios. Overall, it is shown that the presented approach is capable of predicting the high cycle fatigue nucleation time. Moreover, qualitative predictions of microstructurally small crack growth rates are provided. The multi-scale methodology presented here can be extended to other material systems to facilitate a better understanding of the fundamental deformation mechanisms, and to effectively implement such knowledge in mesoscale-macroscale investigations. / Dissertation/Thesis / Doctoral Dissertation Mechanical Engineering 2018

Neste trabalho é estudado o comportamento termodinâmico de um gás unidimensional de bosons sob a ação de uma impureza delta atrativa. O sistema apresenta o fenômeno da condensação de Bose- Einstein e a causa da transição é atribuida ao estado ligado introduzido pela impureza no espectro de partícula livre. A fase condensada é composta pelas partículas capturadas pela impureza, formando uma gota de partículas bem localizadas no espaço. Isto dá à condensação de Bose-Einstein apresentada pelo sistema a aparência da conhecida transição líquido-vapor. A ordem de transição é analisada pela equação de Clausius-Clayperon e interpretada como de primeira ordem. Deste modo, a semelhança entre a condensação de Bose-Einstein neste sistema ma e a transição líquido-vapor é reforçada.O cálculo do calor específico a comprimento constante, mostra a existência de uma descontinuidade finita na temperatura de transição. / The thermodynamic behavior of the one-dimensional Bose gas-attractive delta impurity system is studied in this work. The system is shown to undergo the Bose-Einstein condensation and the cause of the phase transition is attributed to the bound state introduced by the impurity in the free particle energy spectrum. The condensed phase is composed by particles captured by the impurity, forming a drop of particles well localized in space. This gives to the Bose-Einstein condensation in this system the appearance of the ordinary vapor-liquid phase transition. The order of the phase transition is analized with the aid of the Clausius-Clayperon equation wich allowed us to conclude that the transition is a first order one. This reinforce the interpretation of a vapor-liquid transition.The evaluation of the heat capacity at constant length shows the existence of a finite discontinuity at the transition temperature.

Neste trabalho estudamos as estruturas e as mobilidades eletrônicas em um sistema quase-bidimensional de poços quânticos parabólicos de AlxGa1-xAs dopados. Obtemos as auto-energias, as funções de onda e os perfis dos potencias de confinamento efetivo no sistema, através das soluções numéricas das equações de Schrödinger e de Poisson de forma autoconsistente. Em particular, estudamos as mobilidades quânticas e de transporte nestes sistemas. Devido a ocupação de várias subbandas nestes sistemas, as contribuições dos espalhamentos inter-subbandas para as mobilidades têm a mesma importância que os espalhamentos intra-subbandas. Obtemos as mobilidades de cada subbanda devido aos espalhamentos por impurezas doadoras e aceitadoras ionizadas e por potencial de liga. Analisamos os efeitos das distribuições de doadores dopados, de aceitadores de fundo e do potencial de gate externo / In this work we study the electronic structure and electron mobilities in doped wide parabolic quantum wells of AlxGa1-xAs. The subband energies, the wavefunctions, and the effective confining potential profile are obtained by studying selfconsistently the coupled Schrödinger and Poisson equations. Based on the numerical results of the electronic structure, we calculate the quantum and transport mobilities of the system. Usually several subbands are occupied in such systems and they are strongly coupled to each other, the intersubband interaction shows the same importance as the intrasubband one to the electronic transport. We study and analyze the electron mobility of each subband due to the ionized donor scattering and the alloy scattering. We also show the effect of ionized background acceptor impurity scattering

Ferromagnetismo itinerante permanece um problema elusivo em Física. O fenômeno resulta da competição entre interação eletrônica e efeitos de muitos corpos e não pode ser tratado perturbativamente. Particularmente em uma dimensão, teoremas proíbem fases ferromagnéticas em T = 0 para modelos de rede com hopping de primeiros vizinhos. Nos últimos vinte anos, entretanto, apareceram modelos na literatura que estendem o hopping para além de primeiros vizinhos e para os quais ordem ferromagnética foi rigorosamente estabelecida. Praticamente todas as demonstrações da existência de ferromagnetos unidimensionais são feitas em fase isolante (com exceção de casos patológicos, como repulsão infinita). Isto nos levou a investigar o acoplamento entre os setores de spin e carga no regime fortemente interagente quando se dopa o sistema, o que introduz pontos de Fermi pF e -pF. Encontramos, com teoria de perturbação, singularidades logarítmicas na autoenergia do mágnon quando seu momentum é pF ou -pF. Derivamos uma teoria de campo efetiva para o espalhamento em torno desses pontos entre os mágnons e férmions sem spin (que representam o setor de carga). O modelo efetivo é similar ao modelo Kondo, que consiste de uma impureza magnética localizada acoplada localmente com um mar fermiônico por uma interação de troca entre spins. Em nosso modelo, há, na realidade, um pseudospin que indica se o momentum de uma partícula é próximo de pF ou de -pF e o mágnon se comporta como uma impureza móvel. A mobilidade da impureza leva a uma relação de dispersão para os férmions dependente do pseudospin da impureza. / Itinerant ferromagnetism remains an elusive problem in Physics. The phenomenon arises from a competition between electronic interaction and many-body effects and cannot be treated perturbatively. Particularly in 1D, there are rigorous proofs that forbid ferromagnetic phase for lattice models with nearest-neighbours hopping only. In the last twenty years, however, models with hopping beyond nearest-neighbours were proposed in the literature and for which ferromagnetic phase was rigorously established. Virtually every proof of the existence of one-dimensional ferromagnets is done in an insulator phase (disregarding some pathological cases, such as infinite electronic repulsion). That motivated us to investigate the coupling between spin and charge sectors in the strongly interacting regime when we dope the system, introducing two Fermi points, pF and -pF. We found out, through perturbation theory, logarithmic singularities in the magnon selfenergy when its momentum is pF or -pF. To understand them, we derived an effective field theory for the scattering between magnons and spinless fermions (which represent the charge sector) close to these points. The effective model resembles the Kondo model, which describes a magnetic impurity locally coupled to a fermionic sea through spin exchange interaction. In our model, there is actually a pseudospin that indicates if a particle momentum is closest to pF or -pF and the magnon behaves as a mobile impurity. The impurity mobility leads to a fermionic dispersion relation that depends on the impurity pseudospin.