No description available.

Electron scattering by a single or multiple impurities affects the quantizaton of conductance of a semiconductor nanochannel. The theoretical model of electron transport in a hardwall nanostructure with an impurity requires an analysis of the electronic transverse energy levels, eigenfunctions and hopping integrals resulting from cross channel or transverse confinement. Theoretical equations for the electronic transverse energy levels, wavefunctions and hopping integrals in the case of a repulsive, finite strength rectangular barrier arbitrarily positioned in the nanochannel are presented. The effects of size, strength and location of the impurity are discussed.In order to find the electronic transverse energy levels, wavefunctions and hopping integrals, two FORTRAN computer programs were developed. The first, called Program Data Input, writes the computational parameters to a data file. The second, Program Single Impurity, uses this data file in performing the calculations of the electronic transverse energy levels, eigenfunctions and hopping integrals. / Department of Physics and Astronomy

Call number: LD2668 .T4 1985 K53 / Master of Science

The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.

A primarily software based Fourier Deep Level Transient Spectroscope (FDLTS) is built. The raw capacitance transient is acquired and digitized using capacitance meter HP4280A whereas the signal analysis is done using a customized software module. The software module calculates both the conventional DLTS spectrum and the Fourier DLTS spectrum. This home-made FDLTS set up was compared to a commercial conventional box-car DLTS system (Sula Technology's DLTS) as well as to a commercial Fourier DLTS system (Bio-rad) and it was found to be either equivalent to the commercial systems or even better in some respects. In one case, Fourier analysis using the home-made setup, led to the detection of a trap completely undetected by the commercial conventional DLTS. The FDLTS system together with the commercial conventional DLTS were used to study possible gold contamination in an industrial process. The study was accomplished by comparing conventional and Fourier DLTS spectra and corresponding calculated trap properties using Schottky barrier diodes fabricated on the suspect wafers and an intentionally gold diffused reference sample wafer. During the investigation minority carrier emission in DLTS using Schottky barrier diodes was observed. The study revealed the presence of some possible gold-like contamination which trapped minority carriers (i.e. electrons) in p type silicon. / Graduation date: 2003

The present project has made a comprehensive assessment of the effect of Nb doping on various charge-transfer related properties of TiO2. Of particular focus, the electrical properties of Nb-doped TiO2 (0.65 at %) have been investigated using the simultaneous measurement of electrical conductivity and thermoelectric power. This investigation was undertaken at elevated temperatures (1073 K -- 1298 K) in equilibrium with a gas phase of controlled oxygen activity (10-10 Pa < p(O2) < 75 kPa). In addition, the effect of segregation on the surface versus bulk composition of Nb-doped TiO2 was also investigated at a function of temperature and oxygen activity. Specifically, the following determinations were undertaken: The effect of oxygen activity, p(O2) and temperature on both electrical conductivity and thermoelectric power The effect of Nb on the defect disorder and related electrical properties of TiO2 The determination of equilibration kinetics and the associated chemical diffusion data for Nb-doped TiO2 The determination of Nb bulk diffusion in TiO2 The effect of p(O2), temperature and dopant content on Nb segregation and the related surface composition of Nb-doped TiO2 The obtained electrical properties enable the determination of a defect disorder model for Nb-doped TiO2, which may be considered within the following p(O2) regimes: Strongly Reduced Regime. In this regime, the predominant ionic defect was anticipated to be oxygen vacancies compensated electronically by electrons. While the transition to this regime (from higher p(O2)) was clearly observed, the predominant defect disorder existing beyond this transition was not confirmed due to an inability to obtain sufficiently low oxygen activity. Metallic-type conductivity behaviour was observed within this transition region. Reduced Regime I. In this regime, the predominate defect disorder defined by the electronic compensation of incorporated Nb ions by electrons was clearly observed. Reduced Regime II. In this regime, the predominate defect disorder defined by the ionic compensation of incorporated Nb ions by quadruply-charged titanium vacancies, was clearly observed. The present project included the determination of diffusion data which included: Temperature dependence of 93Nb tracer diffusion in single crystal TiO2 over the temperature range 1073 K -- 1573 K Chemical diffusion coefficient over the temperature range 1073 K -- 1298 K and oxygen activity range, 10-10 Pa < p(O2) < 75 kPa These pioneering studies are significant as they enable the prediction of the processing conditions required to reliably 1) incorporate Nb into the TiO2 lattice, and 2) achieve equilibrium with the gas phase. Finally, the present project included investigations on the effect of Nb segregation on the surface composition of Nb-doped TiO2, with the following outcomes: Due to segregation, the surface can be significantly enriched in Nb compared to the bulk The extent of enrichment increases as the bulk Nb content or the oxygen activity is decreased Following enrichment, the surface Nb concentration could be sufficiently high to assume a unique surface phase The outcomes of the present project are significant as they can enable the processing of TiO2 with enhanced charge transport and controlled surface properties.

M.Sc. / Impurity resonance scattering effects are investigated in the Cr-Ga alloy system. This system has a triple point on its magnetic phase diagram where the paramagnetic (P), incommensurate (I) and commensurate (C) spin-density-wave (SDW) states co-exist. Alloying Cr with the nonmagnetic nontransitional element Ga affects the magnetic properties of Cr in a very unique way. In order to investigate the presence of resonant impurity scattering effects in binary Cr-Ga alloys, electrical resistivity measurements were carried out in the temperature range between 6 K and 85 K. The results of the investigation show: • A nonmonotonic increase in the residual resistivity of the Cr-Ga system with an increase in the Ga content, due to the presence of resonant impurity scattering of conduction electrons. • A low-temperature resistivity minimum observed in some of the Cr-Ga alloys, taken as further evidence for the presence of resonant impurity scattering effects on the conduction electrons. The impurity resonance scattering effects on the electrical resistivity of a Cr + 1.2 at.% Ga alloy, doped with V and Mn to tune the Fermi level through the impurity level, are also investigated. The investigation was complemented by thermal expansion and velocity of sound measurements in the temperature range 77 K to 450 K for the Cr + 1.2 at.% Ga alloy only. This specific Ga concentration was chosen to allow for studying resonant scattering effects in both the ISDW and CSDW phases of the system. This is possible because concentration of 1.2 at.% Ga is just above the triple point concentration. Doping with Mn to increase the electron concentration (eA) drives the alloy deeper into the CSDW phase region of the phase diagram, while doping with V, on the other hand, will drive the alloy towards the ISDW phase region. The results of the study are summarized as follows: • Two relatively sharp peaks, attributed to resonant impurity scattering effects, are observed in the curve of the residual resisitivity as a function of dopant concentration in the ISDW phase of the ternary (Cr0.988Ga0.012)1-xVx and (Cr0.988Ga0.012)1-yMny alloy systems. v • At 0 K the (Cr0.988Ga0.012)1-yMny alloy system transforms from the ISDW to the CSDW phase at y ≅ 0.0032, giving a CSDW phase for y > 0.0032. A peak is observed in the residual resistivity at about this Mn content. This peak can then either be ascribed to a jump occurring in the residual resistivity when the CSDW phase is entered from the ISDW phase or to resonant scattering effects. The conclusion is that the peak is rather related to the latter effect. • The resistivity as a function of temperature of the above two ternary alloy series show well-developed or weak minima at low temperatures for some of the samples. This is taken as further evidence of the influence of impurity resonant scattering effects on the resistivity of these alloys. • The resistivity and thermal expansion coefficient of the polycrystalline Cr0.988Ga0.012 alloy of the present study behaves anomalously close to the ISDW-CSDW phase transition temperature and warrant further investigation. The concentration-temperature magnetic phase diagram of the (Cr0.988Ga0.012)(Mn,V) alloy system was constructed from the magnetic transition temperatures obtained from electrical resistivity measurements. Theoretical analysis of the phase diagram was done using the two-band imperfect nesting model of Machida and Fujita. The results show: • A triple point at (0.21 at.% V, 225 K) where the ISDW, CSDW and P phases coexist on the magnetic phase diagram. • The curvature of all three theoretically calculated phase transition lines in the region of the triple point is of the same sign as that observed experimentally. • The theoretical fit is very good for the ISDW-P and ISDW-CSDW phase transition boundaries, while there is some discrepancy for the CSDW-P phase transition line. This may be attributed to the fact that the theory is one dimensional and that it does not include electron-hole pair breaking effects due to impurity scattering and also not effects of changes in the density of states due to alloying. / Dr. A.R.E Prinsloo Prof. H.L. Alberts

Approved for public release; distribution in unlimited. / Silicon Blocked Impurity Band (BIB) detectors are highly efficient, radiation-hardened photodetectors that operate in the range of 5-40 æm. To further extend BIB coverage to 40-350 æm, Ge and GaAs BIB detectors are under development; however, these new detectors face fabrication issues that have delayed their introduction. This thesis will describe the use of a numerical model to examine alternate operating modes for GaAs BIB detectors in order to bypass current fabrication issues. The numerical simulations provide an understanding of the fundamental physics that governs detector transport. The proposed alternatives to standard operation are created by reversing the detector's bias and varying the blocking layer thickness. Modeling indicates that reversing the bias on these detectors provides a larger signal current than standard configurations, while preserving the principal benefits gained from a multilayered device. At the same time, the alternate bias configuration allows for the use of thicker blocking layers, while preserving overall detector responsivity and reducing shot noise. This proposed new model of operation should allow for the relaxation of fabrication constraints without sacrificing the inherent benefits associated with BIB detectors. These devices are of potential interest for missile defense and terahertz surveillance applications. / Lieutenant Commander, United States Navy