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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
11

Studies of iron acceptors in indium phosphide by photoconductivity and photoluminescence techniques /

Ng, Po-hung. January 1990 (has links)
Thesis (Ph. D.)--University of Hong Kong, 1990.
12

High speed ROM for direct digital synthesizer applications in Indium Phosphide DHBT technology /

Manandhar, Sanjeev, January 2006 (has links) (PDF)
Thesis (M.S.) in Electrical Engineering--University of Maine, 2006. / Includes vita. Includes bibliographical references (leaves 48-50).
13

High Speed ROM for Direct Digital Synthesizer Applications in Indium Phosphide DHBT Technology

Manandhar, Sanjeev January 2006 (has links) (PDF)
No description available.
14

Luminescent indium phosphide nanocrystals formed from single-source precursors using fluoride-containing ionic liquids

Stephanie, Lee January 1900 (has links)
Master of Science / Department of Chemistry / Emily McLaurin / Quantum dot (QD) or semiconductor nanocrystal research has propagated extensively over the past few years due to increasing interest in long lasting, renewable, and safe applications such as solar cells and LEDs. Quantum dots are utilized for their size dependent optical properties that are based on the quantum confinement effect. Cadmium-based materials dominated early quantum dot research, which led to honing of syntheses and expansion of our understanding of various mechanisms. Recently, however, current applications, such as solar cells, LEDs, and displays, for everyday consumers require less toxic materials. Indium phosphide (InP) is a possible substitute for cadmium-based materials as it is not intrinsically toxic and emits in the visible region from 450-700 nm. Despite the potential benefits to using indium phosphide, reproducible synthetic methods for obtaining stable QDs with narrow size distribution and high quantum yield still need to be refined. Using single-source precursors such as magic-sized clusters is a good starting place for addressing some of these challenges. InP magic-sized clusters are stable intermediates that are homogenously sized and readily isolable for later growth into InP nanocrystals. Our goal with the InP clusters was to determine their long-term stability and reproducibility as an InP precursor. The InP clusters are can be reproduced, have longer stability when stored as a solid, and we can produce luminescent nanocrystals. Producing highly luminescent InP nanocrystals without the use of HF or shell growth is a challenge. We used the 1-methyl-3-butylimidazolium tetrafluoroborate as our ionic liquid to determine the effect of various ratios of ionic liquid to an InP separate-source precursor on quantum yield. The 1:10 ratio of precursor to ionic liquid provided the highest quantum yield of 21%. These reactions were difficult to reproduce, because there were many factors that affected the synthesis, such as how soon the precursor is used, when the reactions are conducted in the microwave, and how the ionic liquid interacts with the microwave. When using 1-methyl-3-butylimidazolium hexafluorophosphate as our ionic liquid and the magic-sized cluster precursor, there was a spike in pressure in the microwave, and the reaction could not proceed due to the production of a gas. This ionic liquid is still capable of producing nanocrystals with an absorption feature. Understanding the mechanism of how these ionic liquids improve luminescence can lead to safer and more efficient syntheses. Ligand stripping and exchange is also a valuable tool for uncovering information about the surface chemistry. The Lewis acid, BF3, formed adducts with native surface ligands and produces polar, stable nanocrystals. Refining the precursor synthesis so that it's reproducible and producing luminescent nanocrystals were both time consuming processes. This work serves an entry into understanding the process of surface passivation and surface composition of the luminescent InP nanocrystals produced with magic-sized clusters and ionic liquids.
15

High electric field current transport in semi-insulating GaAs and InP

Luo, Yilin, 羅以琳 January 2000 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
16

High electric field current transport in semi-insulating GaAs and InP

Luo, Yilin. January 2000 (has links)
Thesis (Ph. D.)--University of Hong Kong, 2001. / Includes bibliographical references (leaves 230-253).
17

Positron annihilation spectroscopic studies of GAAS and INP related systems

凌志聰, Ling, Chi-chung, Francis. January 1996 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
18

Studies of iron acceptors in indium phosphide by photoconductivity andphotoluminescence techniques

伍寶洪, Ng, Po-hung. January 1990 (has links)
published_or_final_version / Physics / Doctoral / Doctor of Philosophy
19

Electrical transport properties of n-Type InP

Beaudoin, Mario January 1988 (has links)
InP obtained by metal-organic vapor phase epitaxy, with properties similar to GaAs, shows mobilities approaching the theoretical maxima at low temperatures. However, the corresponding values remain abnormally low at room temperature where a pronounced electronic excitation to the conduction band is observed simultaneously. This reduction of the mobility is attributed to the presence of deep centers that are electrically inactive at low temperatures but become excited when the temperature increases. A model based on an iterative solution to the Boltzmann equation and accounting for the usual scattering mechanisms, including inelastic interactions, is able to explain the data perfectly and shows that a very high mobility at low temperature is not a sufficient measure of the purity for this material. The binding energy of the deep centers depends on the organo-metalic source used for the growth. This links the solution of this problem to the purification of the chemicals. Depletion effects at the interfaces did not appear to be significant. (Abstract shortened by UMI.)
20

GSMBE growth on V-groove patterned substrates for InP-based quantum wires /

Wang, Jun. January 1997 (has links)
Thesis (Ph.D) -- McMaster University, 1997. / Includes bibliographical references (leaves 130-139). Also available via World Wide Web.

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