Thesis (Ph.D.)--McMaster University (Canada), 1996. / Source: Dissertation Abstracts International, Volume: 58-06, Section: B, page: 3263. Adviser: G. C. Weatherly.

Thesis (Ph. D.)--Ohio State University, 2007. / Title from first page of PDF file. Includes bibliographical references (p. 178-188).

xi, 193 p. : ill. (some col.) A print copy of this thesis is available through the UO Libraries. Search the library catalog for the location and call number. / State of the art semiconductor materials engineering provides the possibility to fabricate devices on the lower end of the mesoscopic scale and confine only a handful of electrons to a region of space. When the thermal energy is reduced below the energetic quantum level spacing, the confined electrons assume energy levels akin to the core-shell structure of natural atoms. Such "artificial atoms", also known as quantum dots, can be loaded with electrons, one-by-one, and subsequently unloaded using source and drain electrical contacts. As such, quantum dots are uniquely tunable platforms for performing quantum transport and quantum control experiments. Voltage-biased electron transport through quantum dots has been studied extensively. Far less attention has been given to thermoelectric effects in quantum dots, that is, electron transport induced by a temperature gradient. This dissertation focuses on the efficiency of direct thermal-to-electric energy conversion in InAs/InP quantum dots embedded in nanowires. The efficiency of thermoelectric heat engines is bounded by the same maximum efficiency as cyclic heat engines; namely, by Carnot efficiency. The efficiency of bulk thermoelectric materials suffers from their inability to transport charge carriers selectively based on energy. Owing to their three-dimensional momentum quantization, quantum dots operate as electron energy filters--a property which can be harnessed to minimize entropy production and therefore maximize efficiency. This research was motivated by the possibility to realize experimentally a thermodynamic heat engine operating with near-Carnot efficiency using the unique behavior of quantum dots. To this end, a microscopic heating scheme for the application of a temperature difference across a quantum dot was developed in conjunction with a novel quantum-dot thermometry technique used for quantifying the magnitude of the applied temperature difference. While pursuing high-efficiency thermoelectric performance, many mesoscopic thermoelectric effects were observed and studied, including Coulomb-blockade thermovoltage oscillations, thermoelectric power generation, and strong nonlinear behavior. In the end, a quantum-dot-based thermoelectric heat engine was achieved and demonstrated an electronic efficiency of up to 95% Carnot efficiency. / Committee in charge: Stephen Kevan, Chairperson, Physics; Heiner Linke, Member, Physics; Roger Haydock, Member, Physics; Stephen Hsu, Member, Physics; David Johnson, Outside Member, Chemistry

Orientador: Fernando Iikawa / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin. / Made available in DSpace on 2018-08-12T12:58:46Z (GMT). No. of bitstreams: 1 Gomes_PauloFreitas_D.pdf: 14344200 bytes, checksum: 55a7f7d3b644c0dc43151a411d53757b (MD5) Previous issue date: 2009 / Resumo: No presente trabalho apresentamos um estudo da luminescência de érbio em nanocristais de silício (nc-Si) e nanofios de óxido de zinco (nw-ZnO). Os nanocristais de silício com érbio são obtidos através do tratamento térmico de filmes finos amorfos de sub-óxidos de silício (SiOx) preparados por rf-sputtering, variando a concentração de Oxigênio e érbio durante o crescimento. O érbio é adicionado aos filmes cobrindo parcialmente a superfície do alvo de silício com pequenos cacos de érbio metálico. Medidas de espectroscopia Raman e microscopia eletrônica de alta resolução (HRTEM) fornecem o tamanho e densidade de nanocristais em cada amostra. Medidas de fotoluminescência (PL) dos nanocristais na temperatura ambiente mostram que o tamanho dos nanocristais varia com a concentração de oxigênio e temperatura de tratamento térmico. A dependência da PL dos nanocristais com a temperatura pode ser entendida considerando a competição entre processos radiativos e não-radiativos. Em amostras com érbio a taxa de recombinação não-radiativa é maior que nas amostras sem érbio. O estudo da PL dos nanocristais e dos íons Er3+ mostra que o Er3+ funciona como um centro de recombinação não-radiativa para a energia proveniente da recombinação de portadores nos nanocristais. Neste caso, parte da energia gerada nos nanocristais é transferida para os íons Er3+ ao invés de ser emitida na forma de fótons. Também é possível observar que a intensidade da PL do Er3+ depende da intensidade da PL dos nanocristais e é maior em amostras contendo nanocristais de ~3nm (que emitem em ~1,5eV), indicando que a transferência é ressonante (com a excitação 4I15/2 ---> 4I9/2 do Er3+ que corresponde a uma energia de 1,5eV). Os nanofios de ZnO com érbio são preparados por deposição vapor-liquid-solid (VLS) e por electrospinning. Em amostras preparadas por VLS, o érbio é depositado sobre os nanofios após sua preparação. No electrospinning um composto organometálico de érbio é adicionado ao polímero precursor. É observada luminescência de érbio quando as amostras são excitadas com um comprimento de onda ressonante com algum nível mais energético do Er3+. Nanocristais de E2O3 são observados por HRTEM na superfície dos nanofios preparados por VLS. Medidas de EXAFS revelam que a vizinhança do Er nessas amostras é idêntica à do óxido Er2O3, indicando que não ocorreu dopagem substitucional do ZnO. / Abstract: We present a study of erbium luminescence in silicon nanocrystals (nc-Si) and zinc oxide nanowires (nw-ZnO). Silicon nanocrystals are produced by annealing of amorphous sub-oxide thin films (SiOx) prepared by rf-sputtering varying the oxygen and erbium concentration during growth. Erbium is added by partially covering the silicon target surface with small pieces of metallic erbium. Raman spectroscopy and HRTEM measurements reveal the size and density of nanocrystals in each sample. Photoluminescence (PL) measurements at room temperature show that the nanocrystal size changes with oxygen concentration and annealing temperature. The PL dependence on the temperature can be understood considering a competition between radiative and non-radiative processes. In samples with erbium the non-radiative recombination rate is higher than in samples without erbium. The study of the nanocrystal and Er3+ PL show that Er3+ behaves as non-radiative recombination centers for excited carriers in the nanocrystals. Part of the energy from the nanocrystals is transferred to Er3+ instead of being emitted as light. The Er3+ PL intensity depends on the nanocrystal PL intensity and is higher in samples containing nanocrystals ~3nm (which emit at ~1.5eV), indicating that the energy transfer is resonant (with the 4I15/2 -----> 4I9/2 Er3+excitation at ~1.5eV) ZnO nanowires were prepared by vapor-liquid-solid (VLS) deposition and by electrospinning. In the VLS method erbium is deposited on the nanowires after growth. In the electrospinning method a metallorganic compound is added to the polymer precursor. Erbium PL is observed when the samples are excited by one of the Er3+ higher transitions. Er2O3 nano-crystals are observed by HRTEM on the surface of the nanowires prepared by VLS. EXAFS measurements in these samples show that the Erneighborhood is identical to that of E2O<>3 indicating that there was no substitutional / Doutorado / Física / Doutor em Ciências

Orientador: Mônica Alonso Cotta / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-19T18:21:16Z (GMT). No. of bitstreams: 1 Oliveira_DouglasSoaresde_M.pdf: 3151118 bytes, checksum: 954bfe85e80e3ae53e5e5c87d10aa961 (MD5) Previous issue date: 2012 / Resumo: O estudo em nanofios semicondutores é crescente, seja pelo grande potencial de aplicações previsto para eles, seja para entender a dinâmica de formação dessas nanoestruturas. Entretanto, estes dois elementos estão ligados, pois é necessário entender o processo de síntese dos nanofios semicondutores para utilizar todo o seu potencial para aplicações. Neste trabalho, crescemos e estudamos nanofios de fosfeto de índio. Os nanofios foram crescidos pela técnica vapor-líquido-sólido em uma câmara de crescimento epitaxial por feixe químico (CBE). Através de microscopia eletrônica de varredura e microscopia eletrônica de transmissão, obtivemos dados para análise dos nossos resultados. Os parâmetros de crescimento utilizados foram escolhidos de forma que nossos nanofios apresentassem um número bastante significativo de falhas de empilhamento. Utilizamos também nanopartículas catalisadoras muito pequenas (~5nm). Nosso resultado principal foi uma nova morfologia para nanofios. Obtivemos nanofios com variações periódicas de diâmetro sem modificar os parâmetros durante o crescimento. Sendo a distância entre essas variações de diâmetro crescente com o inverso do fluxo do precursor de índio (Trimetil-índio) fornecido durante o crescimento. Análise por microscopia eletrônica de transmissão nos mostrou que essas oscilações periódicas de diâmetro estão associadas com um aumento muito grande no número de falhas de empilhamento e mudanças na fase cristalográfica, de wurtzita para blenda de zinco. Esta morfologia foi modelada por nós como a nanopartícula englobando parcialmente a lateral do nanofio periodicamente durante o crescimento. Nosso modelo é baseado em considerações sobre a competição entre as rotas de incorporação de índio durante o crescimento, as condições termodinâmicas para a nucleação na linha de três fases e estabilidade mecânica da nanopartícula sobre o nanofio durante o crescimento / Abstract: The study of semiconductor nanowires is growing, either due to the great potential for applications or to understand the dynamics of formation of these nanostructures. However, these two elements are linked since it is necessary to understand the synthesis of semiconductor nanowires in order to use all its potential for applications. In this work, we studied and grew nanowires of indium phosphide. These nanowires were grown by the vapor-liquid-solid method on a chemical beam epitaxy (CBE) chamber. They were studied by scanning and transmission electron microscopy. The growth parameters used were chosen so that our NWs presented a significant number of stacking faults and very small (~5nm) catalyst nanoparticles (NPs). Our main result was the observation of a new NW morphology. We have obtained NWs with periodical variations in diameter without any changes in growth parameters during the run. The distance between these oscillations depends almost linearly on the inverse of the Indium precursor flow (TMI) provided during growth. Analysis by transmission electron microscopy has shown that the periodic oscillations in diameter are associated with a very large increase of SF densities and crystallographic phase changes, from Wurtzite to Zinc Blende phase. We have modeled the formation of this morphology as the NP partly wetting the NW sidewalls periodically during growth. Our model is based in considerations of competition between the routes of incorporation of indium during growth, the thermodynamic conditions for nucleation at the three-phase line and mechanical stability of the NP on the NW during growth / Mestrado / Física / Mestre em Física

Orientador: Monica Alonso Cotta / Tese (doutorado) - Universidade Estadual de Campinas, Instituto de Fisica Gleb Wataghin / Made available in DSpace on 2018-08-04T02:49:32Z (GMT). No. of bitstreams: 1 Bortoleto_JoseRobertoRibeiro_D.pdf: 16802950 bytes, checksum: 1ef2bf92db0b00f30e5db9c5e3e3f34d (MD5) Previous issue date: 2005 / Resumo: Neste trabalho estudamos os mecanismos de crescimento durante a epitaxia de estruturas III-V baseadas na liga InP. Em particular, o principal objetivo foi correlacionar os mecanismos cinéticos durante a nucleação de nanoestruturas auto-formadas com as propriedades estruturais da camada que serve de substrato. Todas as amostras foram crescidas usando um sistema de epitaxia por feixe químico (CBE). De forma geral as amostras foram caracterizadas usando microscopia de força atômica (AFM), microscopia eletrônica de transmissão (TEM), difração de elétrons de alta energia (RHEED) e difração de raios-X. Na primeira parte deste trabalho correlacionamos as mudanças morfológicas nos filmes homoepitaxiais de InP com o padrão de RHEED exibido durante o crescimento epitaxial. Mostramos que as mudanças morfológicas de 3D para 2D com os parâmetros de crescimento estão diretamente relacionadas com as reconstruções superficiais 2x1 e 2x4, respectivamente. Além disso, indicamos que a formação de defeitos morfológicos é devido à dimerização In-P, através da ativação local do mecanismo de bias na difusão. Por outro lado, também investigamos o efeito dos parâmetros de crescimento (temperatura, taxa de crescimento e quantidade de material) na nucleação e auto-formação de ilhas de InP sobre InGaP/GaAs. Na segunda parte desta tese concentramos nossa atenção no efeito das propriedades da camada buffer de InGaP sobre nanoestruturas auto-formadas, principalmente sobre a sua organização espacial. Para tanto, em primeiro lugar, investigamos as propriedades de bulk da liga de InGaP e a dependência com os parâmetros de crescimento. Nossos resultados mostram que o InGaP exibe tanto ordenamento atômico de rede quanto modulação de composição. Estes dois fenômenos estão correlacionados com o tipo de reconstrução superficial. Em específico, a liga de InGaP apresenta ordenamento CuPtB quando a superfície exibe reconstrução superficial 2x1, conforme descrito na literatura. Por outro lado, a reconstrução superficial 2x4 desempenha um papel importante no fenômeno de modulação de composição. De fato, tanto a modulação de composição quanto a morfologia superficial do filme depende dos mecanismos cinéticos de superfície, que envolvem tanto os átomos adsorvidos de In quanto de Ga. Por fim mostramos que a modulação de composição na liga de InGaP pode organizar espacialmente a nucleação de ilhas de InP em uma rede quadrada. Além disso, mostramos que é possível criar redes bidimensionais de pontos quânticos de InAs/GaAs a partir do arranjo espacialmente ordenado das ilhas de InP/InGaP / Abstract: In this work we study the growth mechanisms during epitaxy of III-V structures based on InP. The main goal was to correlate the kinetic mechanisms during nucleation of self-assembled nanostructures with the bulk properties of the buffer layer. All samples were grown by chemical beam epitaxy (CBE) and characterized using atomic force microscopy (AFM), transmission electron microscopy (TEM), reflection high-energy electron diffraction (RHEED) and X-ray diffraction. In the first part of this work we correlate the morphological changes in homoepitaxial InP films with the RHEED pattern during growth process. We show that the morphological transition from 3D to 2D with growth parameters is related to changes in surface reconstruction, from 2x1 to 2x4. Moreover, we point out that the formation of morphological defects is due to mixed In-P dimerization, via the local activation of the diffusion bias mechanism. On the other hand, we also investigate the influence of the growth parameters (temperature, growth rate and amount of deposited material) on the nucleation and selfassembly of InP islands grown on InGaP/GaAs layers. In the second part of this work we concentrate our attention on the InGaP bulk properties, and their effect on the self-assembled InP nanostructures, mainly regarding their spatial ordering. In this way, we first investigate the dependence of InGaP bulk properties with the growth parameters. Our results show that our InGaP layers exhibit atomic ordering as well as compositional modulation. Both phenomena are correlated to the surface reconstruction exhibited by the InGaP surface during growth process. The InGaP alloy presents CuPtB atomic ordering when the RHEED pattern shows 2x1 reconstruction, in agreement with reports in literature. On the other hand, the 2x4-type reconstruction plays an important role in the compositional modulation phenomena. Actually, both compositional modulation and surface morphology of InGaP films depend on surface kinetic mechanisms, and thus on In and Ga adatom mobilities. At last we show that the compositional modulation in the InGaP alloy can be used to organize spatially the InP islands in a square lattice. Moreover, we point out that it is possible to produce bidimensional lattices of InAs/GaAs quantum dots starting from a template of laterally organized InP/InGaP nanostructures / Doutorado / Física da Matéria Condensada / Doutor em Ciências

Orientadora: Mônica Alonso Cotta / Dissertação (mestrado) - Universidade Estadual de Campinas, Instituto de Física Gleb Wataghin / Made available in DSpace on 2018-08-31T00:06:01Z (GMT). No. of bitstreams: 1 Silva_AldelianeMariada_M.pdf: 11574559 bytes, checksum: 5c39733d3a4441b98e7edbef8adbd795 (MD5) Previous issue date: 2016 / Resumo: Este trabalho apresenta resultados de nossa investigação sobre as propriedades elétricas do biossensor do tipo transistor de efeito de campo (FET, do inglês Field Effect Transistor) baseado em fosfeto de índio (InP). A estrutura deste biossensor consiste em um filme fino de InP do tipo-n crescido por Epitaxia de Feixe Químico (CBE, do inglês Chemical Beam Epitaxy) sobre um substrato de InP semi-isolante. No nosso biosensor, o contato da porta foi substituído por uma camada de biomoléculas carregadas de interesse para a detecção, funcionalizadas na camada de óxido do InP. O campo elétrico associado a estas biomoléculas pode modular o canal de condução. O sistema de interação específica utilizado foi a hibridização de fitas de ssDNA (single stranded DNA) complementares, onde os oligonucleotídeos receptores (probe) ssDNA foram imobilizados covalentemente na superfície da amostra. Este procedimento foi realizado através da oxidação com plasma de O2, seguida da funcionalização utilizando etanolamina e polietileno glicol (PEG), que serve como linker para a imobilização de receptores na superfície. As medidas elétricas de detecção foram feitas com as moléculas de target diluídas em buffer TRIS. A hibridização do DNA provoca um aumento na densidade de cargas na superfície, que consequentemente aumenta a largura da região de depleção no semicondutor, variando a resistência medida. A resposta do biossensor corresponde à variação da resistência em função da concentração de target. O biossensor apresentou sensibilidade para medidas de concentrações entre 10 pM e 30 pM, onde ocorre a saturação, e o tempo de resposta, no qual encontramos a estabilização do sinal medido, foi de aproximadamente 20 min. Variando a concentração de portadores e a espessura da camada semicondutora, verificamos alterações no limite de saturação (até ?M) e na sensibilidade do dispositivo. O controle destas propriedades, porém, mostrou-se limitado devido à variações na dopagem residual do semicondutor, e por isso discutimos aqui alternativas à geometria do dispositivo. Analisamos também a camada funcionalizada através de medidas de topografia e potencial de superfície usando métodos de microscopia de varredura por sonda (SPM, do inglês Scanning Probe Microscopy). Pudemos identificar a variação no potencial de superfície associada à imobilização do PEG e do DNA probe, mas não obtivemos resolução para o DNA target. Esta técnica permitiu porém verificar a estratificação de quatro níveis de potencial de superfície, no caso onde a funcionalização resultou em camadas mais espessas do que os valores típicos (~2 nm de espessura), em pequenas áreas do semicondutor / Abstract: This dissertation presents our results for the electrical properties investigation of Indium Phosphide (InP) based Field Effect Transistor (FET) biosensor. The structure of this biosensor consists of a thin n-type InP film grown by Chemical Beam Epitaxy (CBE) on a semi-insulating InP substrate. In our biosensor, the gate contact has been replaced by charged biomolecules of interest for detection, functionalized to the InP oxide layer. The electric field associated with these biomolecules provides the conduction channel modulation. The specific interaction system used here was the hybridization of single stranded-DNA (ssDNA) complementary oligonucleotides, for which the ssDNA receivers (probes) were covalently immobilized on the sample surface. The functionalization was carried out by oxidation with O2 plasma, followed by grafting biomolecules using ethanolamine and polyethylene glycol (PEG), which act as a linker for immobilizing the receptors on the surface. Electrical detection measurements were made with the target molecules diluted in TRIS buffer. DNA hybridization causes an increase in the surface charge density; consequently the semiconductor depletion width increases, affecting the measured resistance. The biosensor response function corresponds to the resistance variation as a function of target concentration. Our biosensor showed measured sensitivity to concentrations between 10 pM and 30 pM, for which signal saturation occurs. The response time, for which the measured signal stabilization was observed, was approximately 20 min. By varying the carrier concentration and the thickness of the semiconductor layer, we observed changes in the saturation limit (up ?M) and device sensitivity. The control of these properties, however, is limited due to variations in the residual doping of the semiconductor. Therefore we discuss here alternative device geometries. We also analyzed the functionalized layer by topography and surface potential measurements obtained using scanning probe microscopy (SPM) methods. We were able to identify the change in surface potential associated with the immobilization of PEG and probe DNA, but not for the target DNA. These techniques have however shown four surface potential levels in the case when the functionalization resulted in non-uniform layers, thicker than the typical values (~ 2 nm), in small areas of the semiconductor / Mestrado / Física / Mestra em Física / 165741/2014-7 / CNPQ

No description available.

Depuis quelques années, les diodes électroluminescentes organiques (OLEDs) connaissent un véritable essor se traduisant par leur intégration progressive au sein d'appareils électroniques « grand public » : téléphones portables, téléviseurs, etc. En dépit d'avantages indéniables, des obstacles — notamment des coûts de fabrication élevés et des durées de vie insuffisantes — freinent encore l'adoption massive de cette technologie. Le remplacement de la couche émissive organique par des quantum dots pourrait résoudre tout ou partie de ces problèmes, tout en améliorant les performances des dispositifs « QD-LEDs » ainsi constitués.L'objectif de cette thèse consiste à élaborer, par voie colloïdale, des nanocristaux semi-conducteurs non toxiques et présentant toutes les caractéristiques requises pour leur intégration dans des QD-LEDs.Un protocole de synthèse de nanoparticules d'antimoniure d'indium (InSb) reposant sur l'injection du précurseur d'antimoine en phase gazeuse a tout d'abord été mis au point. Suite à l'optimisation des différents paramètres de réaction, les nanocristaux obtenus par cette voie présentent un certain nombre de qualités : bonne cristallinité, faible dispersion en taille et excellente stabilité en solution. En revanche, l'absence de photoluminescence — attribuée à la présence d'une coquille amorphe autour du cœur des particules — ne permet pas à l'heure actuelle d'exploiter pleinement ces nanocristaux dans des applications optiques.L'étude a ensuite été dirigée vers la production de quantum dots à base de phosphure d'indium (InP), afin de permettre la réalisation ultérieure d'un dispositif QD-LED fonctionnel. Grâce à l'élaboration de structures à gradient de composition, des nanocristaux dotés d'un fort rendement quantique de photoluminescence ainsi que d'une excellente stabilité en milieu oxydant ont pu être élaborés.Enfin, des essais préliminaires portant sur l'intégration des nanocristaux à base de phosphure d'indium dans des diodes électroluminescentes ont été menés. Le dépôt des quantum dots a été réalisé selon la technique dite de « LANGMUIR-SCHAEFFER stamping » tandis que les autres couches présentes dans l'empilement — à base de petites molécules — ont été élaborées par évaporation. En dépit de performances encore modestes, l'émission des QD-LEDs ainsi produites présente toutefois une nette contribution provenant de la couche de nanocristaux Ces résultats ouvrent ainsi la voie à de nouveaux développements très prometteurs. / During the past few years, organic light-emitting devices (OLEDs) gradually appeared in consumer electronics such as smartphones and television sets. Unfortunately, the OLED market is still curbed by some drawbacks of this technology — namely high manufacturing costs and limited lifetime. By replacing the organic emitting layer by quantum dots, one could expect to partially solve these problems and further improve the performances of the so-called QD-LED devices.The aim of this study is to produce semiconductor nanocrystal quantum dots which are non-toxic and exhibit all the required features for their successful integration inside QD-LED structures.A new approach for the synthesis of colloidal indium antimonide (InSb) nanocrystals relying on the use of a gaseous antimony precursor was firstly developed. Thanks to the optimization of several reaction parameters, the nanocrystals obtained by this pathway exhibit a good crystallinity, a reduced size dispersion, and are highly stable in solution. Unfortunately, no photoluminescence signal was recorded — probably because of an amorphous shell surrounding the particle cores — so these nanocrystals cannot be used for optical applications.Then, we investigated the chemical synthesis of indium phosphide (InP) based quantum dots likely to yield a working QD-LED prototype. Owing to composition gradient shells, we produced nanocrystals exhibiting a high photoluminescence quantum yield and a good stability in oxygen-rich medium.Finally, we made several preliminary attempts in order to integrate indium phosphide based nanocrystals in light-emitting diodes. The quantum dot films were deposited by the “Langmuir-Schaeffer stamping” technique while the other layers made of small molecules were evaporated. Despite its still modest performances, the emission of the elaborated QD-LEDs shows a neat contribution from the embedded quantum dots. These results open the way for future developments.

Le phosphure d’indium (InP) est un semiconducteur III-V aux propriétés adaptées aux applications optoélectroniques. Toutefois, son oxydation spontanée à l’air engendre une dégradation de ses propriétés électriques. La passivation de sa surface devient donc une étape clé pour son intégration dans des dispositifs optoélectroniques attractifs. Dans le cadre de ce travail de thèse, nous nous sommes intéressés à l’étude de la passivation de surface de InP par nitruration. Nous avons réalisé de manière reproductible la formation d’un film de type polyphosphazène ( H2N-P=NH )n sur InP par voie électrochimique dans l’ammoniac liquide (-55°C). Le suivi de la croissance du film sur InP a été effectué grâce au couplage systématique de mesures électrochimiques (J = f(E), J = f(t), E = f(t) et C = f(E)) avec des analyses de composition chimique de surface par XPS (X-ray photoelectron spectroscopy). Chacune de ces techniques apporte des éléments sur la compréhension du mécanisme de nitruration de la surface de InP en solution (anodisation en milieu NH3 liq), nous permettant ainsi de proposer un mécanisme de formation du film de phosphazène de type ECE « Electrochimique-Chimique-Electrochimique ». L’étude par XPS de la stabilité à l’air de la composition chimique de surface de InP traité a révélé le caractère protecteur du film. La valeur élevée de la capacité interfaciale après traitement anodique suggère que l’interface modifiée (de type Electrolyte-Insulator-Semiconductor) est en régime d'accumulation et se comporte comme un « vrai » condensateur. / Indium phosphide (InP) is a III-V semiconductor, which represents an ideal candidate for optoelectronic applications. However, its spontaneous oxidation in air leads to the loss of its electrical properties. The surface passivation becomes a key step for its integration in attractive optoelectronic devices. As part of this thesis, we are interested in studying the passivation of the InP surface by nitridation. We reproducibly realized the formation of a polyphosphazene-like (H2N-P=NH)n film on InP by electrochemical treatment in liquid ammonia (-55°C). The monitoring of the film formation was performed using a systematic coupling between electrochemical measurements (J = f(E), J = f(t), E = f(t), and C = f(E)) and XPS analysis (X-ray photoelectron spectroscopy) to follow the chemical composition of the surface. These techniques provide some answers about the nitridation mechanism of InP surface by a wet process (anodization in NH3 liq), leading to the formation of the phosphazene film through an ECE mechanism “Electrochemical-Chemical-Electrochemical”. The study of the air ageing of the modified surface using XPS analysis revealed the protective nature of the film. The high value of the interfacial capacity after the anodic treatment suggests that the modified interface (Electrolyte-Insulator-Semiconductor-like) is in accumulation state and behaves like a "real" capacitor.