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Design, theory, and applications of broad gain profile indium gallium arsenide phosphide diode lasers /Woodworth, Sean C. Cassidy, Daniel Thomas. January 2005 (has links)
Thesis (Ph.D.)--McMaster University, 2005. / Supervisor: Daniel Cassidy. Includes bibliographical references (p. 199-211).
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Dielectric-enhanced quantum-well intermixing in [lámbdha] = 1.55 [micron]m InGaAsP/InP laser structures /Hazell, John Frederick. January 2000 (has links)
Thesis (Ph.D.) -- McMaster University, 2000. / [Lámbdha] and [micron] in title are Greek letters. Includes bibliographical references (leaves 110-114). Also available via World Wide Web.
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Design, theory, and applications of broad gain profile indium gallium arsenide phosphide diode lasers /Woodworth, Sean C. Cassidy, Daniel Thomas. January 2005 (has links)
Thesis (Ph.D.)--McMaster University, 2005. / Supervisor: Daniel Cassidy. Includes bibliographical references (p. 199-211).
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Schottky contacts to indium phosphide and their applications /Pang, Zhengda. January 1997 (has links)
Thesis ( Ph.D. ) -- McMaster University, 1997. / Includes bibliographical references (p. 190-197) Also available via World Wide Web.
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Optical two-wave mixing in iron-doped indium phosphide.Peereboom, Nick C. (Nicolaas Christopher), Carleton University. Dissertation. Engineering, Electrical. January 1992 (has links)
Thesis (M. Eng.)--Carleton University, 1992. / Also available in electronic format on the Internet.
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Atomic diffusion and interface electronic structure of III-V heterojunctions and their dependence on epitaxial growth transitions and annealingSmith, Phillip E., January 2007 (has links)
Thesis (Ph. D.)--Ohio State University, 2007. / Title from first page of PDF file. Includes bibliographical references (p. 157-165).
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Growth and Characterization of III-V Phosphide NanowiresJanuary 2016 (has links)
abstract: Nanowires are 1D rod-like structures which are regarded as the basis for future technologies. III-V nanowires have attracted immense attention because of their stability, crystal quality and wide use. In this work, I focus on the growth and characterization of III-V semiconductor nanowires, in particular GaP, InP and InGaP alloys. These nanowires were grown using a hot wall CVD(Chemical Vapor Deposition) setup and are characterized using SEM (Scanning Electron Microscope), EDX (Energy Dispersive X-ray Spectroscopy) and PL (Photoluminescence) techniques.
In the first chapter, Indium Phosphide nanowires were grown using elemental sources (In and P powders). I consider the various kinds of InP morphologies grown using this method. The effect of source temperature on the stoichiometry and optical properties of nanowires is studied. Lasing behavior has been seen in InP nanostructures, showing superior material quality of InP.
InGaP alloy nanowires were grown using compound and elemental sources. Nanowires grown using compound sources have significant oxide incorporation and showed kinky morphology. Nanowires grown using elemental sources had no oxide and showed better optical quality. Also, these samples showed a tunable alloy composition across the entire substrate covering more than 50% of the InGaP alloy system. Integrated intensity showed that the bandgap of the nanowires changed from indirect to direct bandgap with increasing Indium composition. InGaP alloy nanowires were compared with Gallium Phosphide nanowires in terms of PL emission, using InGaP nanowires it is possible to grow nanowires free of defects and oxygen impurities, which are commonly encountered in GaP nanowires. / Dissertation/Thesis / Masters Thesis Electrical Engineering 2016
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Charge-transfer between TCNQ and different sizes of InP quantum dotsZhang, Xingao January 1900 (has links)
Master of Science / Department of Chemistry / Emily McLaurin / Quantum dots (QDs) are novel semiconductors of interest for applications because of their special tunable properties. Among the many types of QDs, InP QDs attract attention because they do not have toxic-heavy-metal elements such as Cd or Pb. Charge-transfer (CT) is important in applications of InP QDs. CT consists of two or more molecules and some of them donate electrons and others accept those electrons. An understanding of CT between QDs with tetracyanoquinodimethane (TCNQ) is important for applications of QDs in photovoltaic and photocatalytic materials. TCNQ is an organic electron acceptor and CT complexes of TCNQ exhibit metallic electric conductivity. Previous research about CT between QDs and TCNQ examined PbS and CdSe QDs, but toxic-heavy-metals limit future application of these materials. So, it is important to research CT between InP QDs and TCNQ. This thesis examines how the amount of InP QDs (QD:TCNQ ratio) and diameters of InP QDs affect the CT between InP QDs and TCNQ.
In this thesis, InP QDs are synthesized by a microwave-assisted ionic liquid (MAIL) method and InP QDs of different sizes are isolated using size-selective precipitation. Then, TCNQ-InP QD solutions are prepared with different ratios, with and without light, and with InP QDs of different sizes. These InP QDs and InP QDs-TCNQ samples are characterized using UV-Vis-NIR absorption, photoluminescence (PL), time-correlated single photon counting (TCSPC), and FT-IR spectroscopies.
In Chapter 2, the details of synthesizing InP QDs, size selection, and preparation of different TNCQ-InP QD solutions are presented. Then, factors that affect the interaction between InP QDs and TCNQ and possible reasons for these factors are discussed.
Based on calculations and experimental results, the carbon atom with the biggest amount of positive charge in TCNQ and phosphorous in InP QDs are likely the acceptor and donor, respectively. CT is affected by the amount of InP QDs in solution, and more InP QDs will reduce more TCNQ. The CT is also affected by the size of the InP QDs and enhanced by light.
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Surface roughness of InP after N+2 bombardment : Ion areic dose dependenceOsman, Sarah Omer Siddig 13 May 2005 (has links)
Please read the abstract in the section front of this document. / Dissertation (MSc (Physics))--University of Pretoria, 2006. / Physics / unrestricted
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Synthesis and characterization of indium phosphide-based quantum dot heterostructuresToufanian, Reyhaneh 05 February 2021 (has links)
Colloidal semiconductor nanocrystal quantum dots (QDs) have been extensively studied for applications in optoelectronic devices, biosensing, and imaging. Recent interest has turned to heavy metal-free compositions such as indium phosphide as an alternative to cadmium- and lead-based materials. Photoluminescence emission from InP QDs is size-tunable over a wide spectral range, providing superior color tuning compared to traditional CdSe QD but their optical properties and chemical synthesis is less well established. This study examines how InP-based heterostructures can be engineered to enhance their utility as heavy metal-free fluorophores emitting throughout the visible and near infrared (NIR) wavelength ranges by addressing three fundamental materials design and synthesis issues.
First, the bandgap engineering of InP-based QDs is achieved by varying the core size, shell composition, and shell thickness of a core/shell heterostructures, generating emitters spanning 500 – 1100 nm. Second, the brightness mismatch between small blue/green emitters and large red-emitting QDs is addressed by tuning the absorption cross-section and extinction coefficient by synthesizing a series of QDs with a combination of core sizes, shell thicknesses, and shell compositions, resulting in a rainbow of brightness-matched InP emitters. Finally, the synthesis of inverted InP heterostructures, producing the reddest-emitting InP QDs ever reported by generating photoluminescence from a quantum confined InP shell, was significantly improved. The non-toxic nature of InP in conjunction with its unique optical properties render it an excellent candidate for use in in vitro and in vivo clinical or commercial settings.
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