published_or_final_version / Physics / Doctoral / Doctor of Philosophy

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Thesis (Ph. D.)--Georgia State University, 2008. / Title from file title page. Nikolaus Dietz, committee chair, Brian Thoms, A. G. Unil Perera, Xiaochun He, committee members. Electronic text (215 p. : col. ill.) : digital, PDF file. Description based on contents viewed on July 14, 2008. Includes bibliographical references (p. 209-215).

Thesis (Ph. D.)--University of Hong Kong, 1999. / Includes bibliographical references (leaf 110).

Thesis-University of California, Berkeley, October 1956. / Bibliography references : p. 58.

Th. doct.-ing.--Nancy, I.N.P.L., 1979.

Emission spectra of Indium have been photographed over the spectral range from 340A° (177A° in 2nd order) to 9500A° using the disruptive electrodeless and spark in helium sources. About 4000 lines of Indium have been measured and 36% of these lines are classified as belonging to the spectra of InI,InII, Inlll, InlV and InV. The analyses of Inlll and InlV have been revised and extended to include 4d¹ºns(n=5 to 12), `4d¹ºns(n=5 to 9), 4d¹ºnd (n=5 to 9) and 4d¹ºnf(n=4 to 7). Polarisation theory has been applied to 4d¹ºng(n=5 to 9) and 4d¹ºnh (n=6 to 9) series and the ionization potential deduced from this is reported to be 226191.3 cm⁻¹. The dipole polarizability of the 4d¹º core is estimated to be 3.48a₀³ . Most of the expected terms of 4d⁹ 5s5p and 4d⁹ 5s6s are established for the first time. Some of the levels of 4d⁹ 5s5d are also added as well as some levels from the higher configurations 4d⁹ 5s7s and 4d⁹ 5s6d. In triply ionised Indium the new additions are to the 4d⁹5d, 4d⁹ 6d, 4d⁸5s and 4d⁹6p configurations. Houston's theory of intermediate coupling has been successfully applied to 4d⁹ns (n=5,6 and 7) terms. Tentative values are given to several levels of 4d⁸5s5p and 4d⁹4f terms. The double limit of InlV is calculated from 4d⁹ns series as 461875 cm⁻¹ and 468989 cm⁻¹. Experimental results are compared with the theoretical calculations for some of the configurations of Inlll and InlV. / Science, Faculty of / Physics and Astronomy, Department of / Graduate

The etching of indium phosphide and indium by H atoms and methyl radicals has been studied in a discharge flow system at temperatures between 25 and 300°C. The results indicate that the hydrogen atoms react with InP to produce In metal globules and PH₃(g) at temperatures greater than 160°C. Methyl radicals were not found to react with InP. However these radicals were found to react with indium metal and the globules that are produced in the reaction of hydrogen atoms with InP. Reactions were conducted by alternately etching with H atoms and then with CH₃ radicals. Rate constants for these reactions were determined at 300°C and these values were found to be consistent with the continuous etch rates observed for a mixture of H atoms and CH₃ radicals. The etched surfaces were studied by SEM, XPS and surface profilometry and their properties found to be consistent with the proposed mechanism for the reaction. / Science, Faculty of / Chemistry, Department of / Graduate

This article aims at growing (0002) InN film on LiGaO2 substrate by chemical vapor deposition (CVD). High purity InCl3 and metallic indium were used to react with NH3 respectively to form InN. Different experimental condictions such as growth temperature and the reaction pressure were adopted and compared to grow a well crystalline structure and smooth InN thin film. After one hour reaction, InN deposits on LiGaO2 substrate. X-ray diffraction, scanning electron microscope, atomic force microscope, photoluminescence, and transmission electron microscope of the samples were measured to investigate the crystal orientation, crystal quality, surface morphology, and microstructure. Based on the result, we can get the best condiction to grow the InN thin film. Through the experimental results, it is found that InN can not be successfully grown by using metallic indium. Oppositely, it is not difficulty to form InN by using InCl3. After a series of attempts on experiments, the temperature of 600 ¢J and the pressure of 400 torr are found to be the best condiction to grow the InN thin films.

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