Thesis--University of California, Berkeley, 1959. / "Physics and Mathematics" -t.p. Includes bibliographical references (p. 129-130).

Thesis (Ph. D.)--University of Hong Kong, 2005. / Title proper from title frame. Also available in printed format.

Thesis (Ph.D.)--McMaster University, 2004. / Advisor: Dr. Harold K. Haugen. Includes bibliographical references (p. 108-111). Also available via World Wide Web.

Thesis (Ph. D.)--University of Canterbury, 2006. / Typescript (photocopy). "May 2006." Includes bibliographical references (leaves [173]-186). Also available via the World Wide Web.

Thesis (Ph. D.)--Oregon Graduate Center, 1987.

InN has been grown on GaN with a thin intermediate layer of InGaN by metalorganic chemical vapor deposition (MOCVD) to further enhance indium incorporation in subsequent InGaN layer. Trimethylindium (TMI) and ammonia (NH₃) were used as the source for InN growth and transmission electron microscopy (TEM) confirmed the presence of pyramid-like structure of InN. A layer of InGaN subsequently grown on top of these InN pyramids shows a red-shift of ~20 nm relative to InGaN layer grown directly on GaN using the same growth condition. However, there is no significant pits reduction. An alternative method to enhance indium incorporation is to grow the InN by adding a small amount of trimethygallium (TMG) into the TMI and NH₃ flow. This method provides a seed layer for the InN growth and it gives a higher density of InN pyramids. X-ray diffraction (XRD) measurement of this sample shows a high indium incorporation to give InGaN with x~0.26 as compared to x~0.22 for sample grown without TMG flow in the InN layer. / Singapore-MIT Alliance (SMA)

O presente estudo procura dar continuidade a um dos ramos de pesquisa desenvolvidos na área de Analítica do Instituto de Química da USP, onde se procura estudar a química de complexos formados entre diferentes metais e o ânion azoteto, N-3. O cátion índio(III), à semelhança do que ocorre com o ferro (III), complexa com o ânion azoteto em meio aquoso. Este poder de complexação foi constatado em estudos polarográficos do sistema In N3+ / N-3 ora em desenvolvimento. A obtenção das constantes de estabilidade dos complexos formados entre o In3+ e o ligante azoteto, por via potenciométrica, baseia-se na alteração do pH do tampão formado por N-3 e o ácido fraco HN3, quando se adicionam íons In3+. O acompanhamento da variação da concentração hidrogeniônica foi f.eito com o auxílio do eletrodo de vidro combinado. A concentração de N-3 de equilíbrio variou de valores próximos de zero a 90 mM, para que se obtivessem dados na mais larga faixa de concentraç6es de ligante. Manteve-se a força iônica das soluções em 2,00OM (NaCI04) e trabalhou-se a 25,0οC. A análise dos dados experimentais e tratamento matemático dos mesmos, evidenciaram a formação de complexos mononucleares e os valores das constantes globais encontrados foram: β1 = (2,0 ± 0,1) x 103M-1 β2 = (7 ± 3) x 105M-2 β3 = (5 ± 1) x 107M-3 β4 = (7 ± 3) x 108M-4 / The present study is a branch of the main work concerned with the complex formation between several metal cations and azide anion in aqueous media. Indium (III) was selected, in analogy to iron (III), because forms complexes with azide in aqueous media. Polarographic studies in development showed the tendency of these complexation. To determine the stability constants of complexes was used potentiometric method using glass e1ectrode. The main advantage is based on pH modification of the buffer solution constituted by azide and hidrazoic acid (N-3;/HN3) when indium (III) cations are added in the buffer. The azide concentration was a1tered from near zero to 90 mM, the ionic strenght he1d at 2,000 M with sodium perchlorate and the temperature kept constant at 25,0°C. The evaluation of experimental data shawed mononuclear species and the global constants found were: β1 = (2,0 ± 0,1) x 103M-1 β2 = (7 ± 3) x 105M-2 β3 = (5 ± 1) x 107M-3 β4 = (7 ± 3) x 108M-4

No description available.

This thesis looks at the transport phenomena in indium arsenide at low temperatures.

Crystalline indium oxide nanowires were synthesized following optimization of growth parameters. Oxygen vacancies were found to impact the optical and electronic properties of the as-grown nanowires. Photoluminescence measurements showed a strong U.V emission peak at 3.18 eV and defect peaks in the visible region at 2.85 eV, 2.66 eV and 2.5 eV. The defect peaks are attributed to neutral and charged states of oxygen vacancies. Post-growth annealing in oxygen environment and passivation with sulphur are shown to be effective in reducing the intensity of the defect induced emission. The as-grown nanowires connected in an FET type of configuration shows n-type conductivity. A single indium oxide nanowire with ohmic contacts was found to be sensitive to gas molecules adsorbed on its surface.