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  • About
  • The Global ETD Search service is a free service for researchers to find electronic theses and dissertations. This service is provided by the Networked Digital Library of Theses and Dissertations.
    Our metadata is collected from universities around the world. If you manage a university/consortium/country archive and want to be added, details can be found on the NDLTD website.
1

Mid-wave infrared HgCdTe photodiode technology based on plasma induced p-to-n type conversion

White, John Kenton January 2005 (has links)
[Truncated abstract] Infrared photodiodes fabricated in HgCdTe achieve near-ideal performance, however, in comparison with other semiconductors, processing techniques for HgCdTe are expensive and have relatively low yields. Reactive-ion-etching (RIE) in a H2⁄CH4 gas mixture, a process primarily used for material removal, will cause p-to-n type conversion in HgCdTe. It has been shown, by several groups, that infrared photodiodes fabricated with a process technology based on RIE p-to-n type-conversion achieve high yields with state-of-the-art performance. For this technology to be accepted RIE formed n-on-p photodiodes must demonstrate junction stability under normal operating conditions. Along with a stable junction, a compatible passivation technology that is able to withstand processing and operation temperatures is required. This thesis investigates the RIE p-to-n type-conversion mechanism in HgCdTe with the aim of demonstrating bake stable RIE formed junctions, and gaining an insight to the processes by which RIE type-conversion occurs. In pursuing these aims, two complimentary objectives were required, namely, the development of a passivation technology compatible with RIE formed junctions, and the development of a detailed I-V/Rd-V model for HgCdTe photodiodes. As a result of these objectives, this thesis presents a double-layer ZnS on CdTe passivation technology with which stable RIE-formed n-on-p junctions in HgCdTe are demonstrated. Using this process technology, mid-wave infrared (MWIR) HgCdTe photodiodes have been fabricated and subjected to a bake in vacuum at 80°C for 175 hours, after which there is negligible degradation in the zero-bias Dynamic-Resistance Area product (RoA) from the pre-bake values

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