Thesis (Ph. D.)--Rutgers University, 2007. / "Graduate Program in Ceramic and Materials Science and Engineering." Includes bibliographical references.

Thesis (M.S.)--Florida State University, 2006. / Advisor: Xiaolei Zou, Florida State University, College of Arts and Sciences, Dept. of Meteorology. Title and description from dissertation home page (viewed June 13, 2006). Document formatted into pages; containsxi, 65 pages. Includes bibliographical references.

Indium antimonide (InSb) and gallium antimonide (GaSb) are technologically important III-V semiconductor materials used in infrared detector systems. Yet, the application of these materials is to a certain extent limited, in that the techniques currently used for their growth are both expensive and problematic. Semiconductor electrochemical deposition, which has been successfully applied to the generation of II-VI semiconductor materials, may offer the prospect of overcoming such limitations. This work presents results that represent a significant contribution to the development of electrochemical methods for both InSb and GaSb thin film growth. The direct electrochemical co-deposition of InSb was achieved via the potentiostatic electrolysis of aqueous halide/citric acid electrolyte solutions, and for the first time, non-aqueous (ethylene glycol) electrolyte solutions containing the halides and tetraethylammonium chloride. This choice of solvents allowed the compound's deposition to be studied over a wide range of temperatures (RT to 185 °C). A first report was also made of the direct potentiostatic co-deposition of GaSb from an aqueous solution containing Ga[2](SO[4])[3] and SbCl[3].An extensive study was carried out on the relationship between the technique's fundamental growth parameters (temperature, deposition potential, solution composition etc.) and the film's compositional, crystallographic and morphological properties. The material's characterisation showed that there was tendency for the films to be non-stoichiometric. X-Ray diffraction patterns obtained from InSb films deposited from aqueous electrolyte solutions showed them to generally consist of two phases, the compound and, depending mostly on deposition potential, one of the elements. Films containing three phases, the compound and both elements, were deposited on Ti substrates from aqueous solutions and on to ITO substrates from non-aqueous solutions. These results were interpreted from both thermodynamic and kinetic viewpoints. This led to the conclusion that kinetic barriers to the formation of InSb still existed, even at the highest temperature used (~185 °C). In respect of GaSb, the compound's formation was complicated by a side reaction involving the evolution of H[2].New studies involving Scanning Electron Microscopy of the electrodeposited materials showed that they exhibited a nodular morphology, which can be explained in terms of the film's limiting current growth conditions. Energy Dispersive X-Ray Analysis (EDX) and Glow Discharge Optical Emission Spectroscopy (GDOES) identified indium chloride as a major impurity in the InSb films, especially those deposited from non-aqueous solutions. A mechanism for the incorporation of indium chloride was proposed, based on the physical entrapment of a precipitate of the compound.

The objectives of the research undertaken have been to investigate the properties of semiconductor lasers operating at around 1.3 mum. The aim of the investigation is to suggest modifications which give rise to improved operating characteristics especially in the high temperature (approaching 85 °C) range. The investigation can be divided into 2 sections: a theoretical approach and an experimental section. The theoretical study examined the performance of compressively strained InGaAsP/InP multiple quantum-well lasers emitting at 1.3 mum in order to investigate the important factors and trends in the threshold current density and differential gain with strain, well width and well number. Structures with a fixed compressive strain of 1% but variable well width, and also with a fixed well width but variable strain from 0% to 1.4% have been considered. It has been found that there is little benefit to having compressive strains greater than 1 %. For structures with a fixed 1% compressive strain and unstrained barriers, an optimum structure for lowest threshold current density and a high differential gain has been found to consist of six 35 A quantum-wells. In addition, compensated strain (CS) structures with compressive wells and tensile barriers have been examined. It is shown that the conduction band offset can be significantly increased and the valence band offset reduced in such structures, to give band-offset ratios comparable with aluminium based 1.3 mum devices. The gain calculations performed suggest that there is little degradation in the threshold carrier density or differential gain due to these alterations in the band offsets; and hence a better laser performance is expected due to a reduction in thermal leakage currents due to the improved electron confinement. The experimental study concentrates on looking at certain key design parameters to investigate their effect on the laser performance. These design parameters range from the number of quantum-wells to the device length. The experimental study confirms the conclusions drawn in the theoretical investigation that the optimum structure for a 1.3 mum InGaAsP laser for low threshold current, high efficiency and high characteristic temperature operation consists of six 1% compressively strained 50 A quantum-wells in a device of medium length (approx. 450 mum). The inclusion of a high reflection coating on one facet provides further improvement in the device performance, but increases the production cost dramatically. Also investigated in the experimental section is the effect of changing the device material from InGaAsP to InGaA1As. The results discussed do not offer firm evidence of any improvement in the device characteristics in switching from a P-based to an Al-based structure. This is mainly due to the added complication of switching to a RWG structure from a BH structure. Another explanation for the relatively poor performance of InGaAsP 1.3 mum lasers has been examined. That is leakage of the carriers out of the well region. Evidence of a leakage current has been seen primarily in devices with a low number of quantum-wells. A novel measurement technique has been demonstrated, which should prove useful for obtaining a numerical value for the leakage current in semiconductor lasers. The results presented suggest that leakage current is not significant for a 9 well device until operating at temperatures above around 373 K. This is supported by evidence supplied by the spontaneous emission spectra.

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Orientadores: Rubens Maciel Filho, André Luiz Jardini Munhoz / Tese (doutorado) - Universidade Estadual de Campinas, Faculdade de Engenharia Química / Made available in DSpace on 2018-08-16T04:58:42Z (GMT). No. of bitstreams: 1 Barbosa_MariaIngridRocha_D.pdf: 6334120 bytes, checksum: 813346a6df3bd4b021cd96c013949224 (MD5) Previous issue date: 2010 / Resumo: A tendência atual na área de desenvolvimento de materiais aponta significantemente para o desenvolvimento de nanocompósitos. Várias pesquisas mostram que as características das propriedades que estes materiais apresentam ampliam de forma bastante promissora suas possíveis aplicações. Levando-se isso em consideração, este projeto tem como objetivo o estudo e desenvolvimento de materiais compósitos (polímero/carga) nanoestruturados para utilização no processo da Estereolitografia Laser no Infravermelho (CO2). Para tanto, o estudo envolve a mistura física de nanopartículas de sílica dispersas em uma matriz polimérica, composta por resina epóxi (diglicidil éter bisfenol A - DGEBA) e dietilenotriamina (DETA) como agente de cura. A determinação das propriedades térmicas e análise dos principais fenômenos e mecanismos gerais de cura do material nanocompósito foram realizadas utilizando a técnica de Calorimetria Exploratória Diferencial (DSC). Simulação computacional, utilizando um modelo matemático determinístico resolvido por volumes finitos através do programa ANSYS CFX®, foi realizada com o objetivo de avaliar os perfis da distribuição da temperatura espacial e temporal (análise térmica transiente), na amostra (modelo físico), durante a aplicação do laser nos materiais nanocompósitos com diferentes composições. A validação física das simulações foi feita utilizando o processo de Estereolitografia Laser no Infravermelho (CO2), avaliando o efeito dos parâmetros do processo (velocidade de varredura e potência do laser). Os resultados obtidos comprovaram que, dentre os sistema estudados, o sistema nanocompósito DGEBA/DETA/NS A apresenta características de viscosidade e cura localizada adequadas à utilização no processo de Estereolitografia Laser no Infravermelho (CO2). Os testes experimentais mostraram que quanto maior a velocidade de varredura do feixe laser (?), menor a difusão de calor para as regiões vizinhas ao ponto irradiado e, consequentemente, menor a espessura da camada curada. Outro fator observado na realização dos testes é que quanto menor a quantidade de pulsos incidentes no material e maior a ?, melhores são as condições de obter a cura localizada, com pouca difusão de calor para regiões vizinhas ao volume irradiado. Com base nesses resultados conclui-se que a cura localizada depende do material utilizado e do controle dos parâmetros operacionais do processo / Abstract: The current trend in materials development points significantly to the development of nanocomposites. Several researches show that the characteristic properties of these materials present, compared to similar macrocystaline, a broad range of promising possible applications. Taking this into consideration, this project aims to study and develop nanostructured composite materials (polymer/filler) to use in the process of Infrared Laser Stereolithography (CO ). 2 Thus, this study involves the physical mixture of silica nanoparticles dispersed in a polymer matrix composed of epoxy resin (diglycidyl ether bisphenol A - DGEBA) and diethylenetriamine (DETA) as curing agent. The determination of thermal properties and analysis of major general phenomena and mechanisms of nanocomposite materials cure were carried out using the Differential Scanning Calorimetry (DSC) technique. Computer simulation using a deterministic mathematical model solved by finite volume through the ANSYS CFX program, was performed ® to evaluate the profiles of the temperature spatial and temporal (transient thermal analysis) distribution in the sample (physical model) during laser application in nanocomposite materials. The simulation validations were made using the Infrared Laser Stereolithography (CO ) process, evaluating the effect of process parameters 2 (laser scan rate and laser power). The results obtained proved that among the studied systems, the DGEBA/DETA/NS A nanocomposite system have characteristics of viscosity and localized cure suitable for use in the Infrared Laser Stereolithography (CO ) process. 2 The experimental tests showed that the higher the scan rate of laser beam (?), lower the heat diffusion to the neighboring regions to irradiated point, and lower the thickness of the layer cured. Another observed aspect in the test refers to the fact that the smaller number of pulses incident on the material and the higher the scan rate of laser beam, better are the conditions to obtain localized cure, with little heat diffusion to neighboring irradiated volume regions. Based on these results it may be concluded that the localized cure depends on the material used and the control of operational parameters process / Doutorado / Desenvolvimento de Processos Químicos / Doutor em Engenharia Química

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