Isotropically conductive adhesives (ICAs) and inks are potential candidates for low cost interconnect materials and widely used in electrical/electronic packaging applications. Silver (Ag)filled ICAs and inks are the most popular due to their high conductivity and good reliability. However, the price of Ag is a significant issue for the wider exploitation of these materials in low cost, high volume applications such as printed electronics. In addition, there is a need to develop systems compatible with temperature sensitive substrates through the use of alternative materials and heating methods. Copper (Cu) is considered as a more cost-effective filler for ICAs and in this work, Cu powders were treated to remove the oxide layer and then protected with a self-assembled monolayer (SAM). The coating was found to be able to limit the re-oxidation of the Cumicron particles. The treated Cu powderswerecombined with one of two different adhesive resins to form ICAs that were stencil printed onto glass substrates before curing. The use of conventional and microwave assisted heating methods under an inert atmosphere for the curing of the Cu loaded ICAs was investigated in detail. The samples were characterised for electrical performance, microstructure and shrinkage as a function of curing temperature (80-150°C) and time. Tracks with electrical conductivity comparable to Ag filled adhesives were obtained for both curing methods and with both resins. It was found that curing could be accelerated and/or carried out at lower temperature with the addition of microwave radiation for one adhesive resin, but the other showed almost no absorption indicating a difference in curing mechanism for the two formulations.

abstract: The increase in computing power has simultaneously increased the demand for input/output (I/O) bandwidth. Unfortunately, the speed of I/O and memory interconnects have not kept pace. Thus, processor-based systems are I/O and interconnect limited. The memory aggregated bandwidth is not scaling fast enough to keep up with increasing bandwidth demands. The term "memory wall" has been coined to describe this phenomenon. A new memory bus concept that has the potential to push double data rate (DDR) memory speed to 30 Gbit/s is presented. We propose to map the conventional DDR bus to a microwave link using a multicarrier frequency division multiplexing scheme. The memory bus is formed using a microwave signal carried within a waveguide. We call this approach multicarrier memory channel architecture (MCMCA). In MCMCA, each memory signal is modulated onto an RF carrier using 64-QAM format or higher. The carriers are then routed using substrate integrated waveguide (SIW) interconnects. At the receiver, the memory signals are demodulated and then delivered to SDRAM devices. We pioneered the usage of SIW as memory channel interconnects and demonstrated that it alleviates the memory bandwidth bottleneck. We demonstrated SIW performance superiority over conventional transmission line in immunity to cross-talk and electromagnetic interference. We developed a methodology based on design of experiment (DOE) and response surface method techniques that optimizes the design of SIW interconnects and minimizes its performance fluctuations under material and manufacturing variations. Along with using SIW, we implemented a multicarrier architecture which enabled the aggregated DDR bandwidth to reach 30 Gbit/s. We developed an end-to-end system model in Simulink and demonstrated the MCMCA performance for ultra-high throughput memory channel. Experimental characterization of the new channel shows that by using judicious frequency division multiplexing, as few as one SIW interconnect is sufficient to transmit the 64 DDR bits. Overall aggregated bus data rate achieves 240 GBytes/s data transfer with EVM not exceeding 2.26% and phase error of 1.07 degree or less. / Dissertation/Thesis / Doctoral Dissertation Electrical Engineering 2018

A demanda por sistemas com elevado desempenho tem trazido a necessidade de aumentar o número de elementos de processamento, surgindo os chamados Sistemas em Chip Multiprocessados (MPSoCs). Além disso, com a possibilidade de redução da escala tecnológica na era submicrônica, permitindo a integração de vários dispositivos, os chips têm se tornado ainda mais complexos. No entanto, com o aumento no número de elementos de processamento, as interconexões são vistas com o principal gargalo dos sistemas-em-chip. Com isso, uma preocupação na forma como tais elementos se comunicam e estão interconectados tem sido levantada, uma vez que tais características são cruciais nos aspectos de desempenho, energia e potência, principalmente em sistemas embarcados. Essa necessidade permitiu o advento das redes-em-chip (Networks-on-Chip – NoCs) e inúmeros estudos já foram realizados para tais dispositivos. No entanto, devido ao aceleramento tecnológico atual, que traz a necessidade por sistemas ainda mais complexos, que consumam baixa energia e que permitam que as aplicações sejam constantemente atualizadas sem perder as características de desempenho, as arquiteturas de interconexão tradicionais não serão suficientes para satisfazer tais desafios. Outras alternativas de interconexão para MPSoCs precisam ser investigadas e nesse trabalho novas arquiteturas para NoCs com tais requisitos são apresentadas. As soluções propostas exploram hierarquia, adaptabilidade e interconexões em três dimensões. Esse trabalho aborda a necessidade do uso de diferentes estratégias em NoCs a fim de atingir os requisitos de desempenho e baixo consumo de potência dos atuais e futuros MPSoCs. Dessa forma, serão verificadas as diversas arquiteturas de interconexões para sistemas heterogêneos, sua escalabilidade, suas principais características e as vantagens das propostas apresentadas sobre as demais soluções. / The demand for systems with high performance has brought the need to increase the number of cores, emerging the called Multi-Processors System-on-Chip (MPSoCs). Also, with the shrinking feature size in deep-submicron era, allowing the integration of several devices, chips have become even more complex. However, with the increase in these elements, interconnections are seen as the main bottleneck in many core systemson- chip. With this, a concern about how these devices communicate and are interconnected has been raised, since these features are crucial for the performance, energy and power consumption aspects, mainly in embedded systems. This need allows the advent of the Networks-on-Chip (NoCs) and countless studies had already been done to analyze such interconnection devices. However, due to the current technological accelerating that brings the need for even more complex systems, consuming lower energy and providing constant application updates without losing performance features, traditional interconnect architectures will not be sufficient to satisfy such challenges. Other interconnecting alternatives for MPSoCs need to be investigated and in this work, novel architectures for NoCs meeting such requirements are presented. The proposed solutions explore hierarchy, adaptability and three dimensional interconnections. This work approaches the requirements in the use of different strategies for NoCs in order to reach the performance requisites and low power consumption of the current and future MPSoCs. Hence, in this approach, several interconnection architectures for heterogeneous systems, their scalability and the main features and advantages of the proposed strategies in comparison with others will be verified.

abstract: Electromigration in metal interconnects is the most pernicious failure mechanism in semiconductor integrated circuits (ICs). Early electromigration investigations were primarily focused on aluminum interconnects for silicon-based ICs. An alternative metallization compatible with gallium arsenide (GaAs) was required in the development of high-powered radio frequency (RF) compound semiconductor devices operating at higher current densities and elevated temperatures. Gold-based metallization was implemented on GaAs devices because it uniquely forms a very low resistance ohmic contact and gold interconnects have superior electrical and thermal conductivity properties. Gold (Au) was also believed to have improved resistance to electromigration due to its higher melting temperature, yet electromigration reliability data on passivated Au interconnects is scarce and inadequate in the literature. Therefore, the objective of this research was to characterize the electromigration lifetimes of passivated Au interconnects under precisely controlled stress conditions with statistically relevant quantities to obtain accurate model parameters essential for extrapolation to normal operational conditions. This research objective was accomplished through measurement of electromigration lifetimes of large quantities of passivated electroplated Au interconnects utilizing high-resolution in-situ resistance monitoring equipment. Application of moderate accelerated stress conditions with a current density limited to 2 MA/cm2 and oven temperatures in the range of 300°C to 375°C avoided electrical overstress and severe Joule-heated temperature gradients. Temperature coefficients of resistance (TCRs) were measured to determine accurate Joule-heated Au interconnect film temperatures. A failure criterion of 50% resistance degradation was selected to prevent thermal runaway and catastrophic metal ruptures that are problematic of open circuit failure tests. Test structure design was optimized to reduce resistance variation and facilitate failure analysis. Characterization of the Au microstructure yielded a median grain size of 0.91 ìm. All Au lifetime distributions followed log-normal distributions and Black's model was found to be applicable. An activation energy of 0.80 ± 0.05 eV was measured from constant current electromigration tests at multiple temperatures. A current density exponent of 1.91 was extracted from multiple current densities at a constant temperature. Electromigration-induced void morphology along with these model parameters indicated grain boundary diffusion is dominant and the void nucleation mechanism controlled the failure time. / Dissertation/Thesis / Ph.D. Materials Science and Engineering 2013

A demanda por sistemas com elevado desempenho tem trazido a necessidade de aumentar o número de elementos de processamento, surgindo os chamados Sistemas em Chip Multiprocessados (MPSoCs). Além disso, com a possibilidade de redução da escala tecnológica na era submicrônica, permitindo a integração de vários dispositivos, os chips têm se tornado ainda mais complexos. No entanto, com o aumento no número de elementos de processamento, as interconexões são vistas com o principal gargalo dos sistemas-em-chip. Com isso, uma preocupação na forma como tais elementos se comunicam e estão interconectados tem sido levantada, uma vez que tais características são cruciais nos aspectos de desempenho, energia e potência, principalmente em sistemas embarcados. Essa necessidade permitiu o advento das redes-em-chip (Networks-on-Chip – NoCs) e inúmeros estudos já foram realizados para tais dispositivos. No entanto, devido ao aceleramento tecnológico atual, que traz a necessidade por sistemas ainda mais complexos, que consumam baixa energia e que permitam que as aplicações sejam constantemente atualizadas sem perder as características de desempenho, as arquiteturas de interconexão tradicionais não serão suficientes para satisfazer tais desafios. Outras alternativas de interconexão para MPSoCs precisam ser investigadas e nesse trabalho novas arquiteturas para NoCs com tais requisitos são apresentadas. As soluções propostas exploram hierarquia, adaptabilidade e interconexões em três dimensões. Esse trabalho aborda a necessidade do uso de diferentes estratégias em NoCs a fim de atingir os requisitos de desempenho e baixo consumo de potência dos atuais e futuros MPSoCs. Dessa forma, serão verificadas as diversas arquiteturas de interconexões para sistemas heterogêneos, sua escalabilidade, suas principais características e as vantagens das propostas apresentadas sobre as demais soluções. / The demand for systems with high performance has brought the need to increase the number of cores, emerging the called Multi-Processors System-on-Chip (MPSoCs). Also, with the shrinking feature size in deep-submicron era, allowing the integration of several devices, chips have become even more complex. However, with the increase in these elements, interconnections are seen as the main bottleneck in many core systemson- chip. With this, a concern about how these devices communicate and are interconnected has been raised, since these features are crucial for the performance, energy and power consumption aspects, mainly in embedded systems. This need allows the advent of the Networks-on-Chip (NoCs) and countless studies had already been done to analyze such interconnection devices. However, due to the current technological accelerating that brings the need for even more complex systems, consuming lower energy and providing constant application updates without losing performance features, traditional interconnect architectures will not be sufficient to satisfy such challenges. Other interconnecting alternatives for MPSoCs need to be investigated and in this work, novel architectures for NoCs meeting such requirements are presented. The proposed solutions explore hierarchy, adaptability and three dimensional interconnections. This work approaches the requirements in the use of different strategies for NoCs in order to reach the performance requisites and low power consumption of the current and future MPSoCs. Hence, in this approach, several interconnection architectures for heterogeneous systems, their scalability and the main features and advantages of the proposed strategies in comparison with others will be verified.

The influx of new data-intensive applications, such as machine learning and artificial intelligence, in high performance computing (HPC) and data centers (DC), has driven the design of efficient interconnection networks to meet the requisite bandwidth of the growing traffic demand. While the exponentially-growing traffic demand is expected to continue into the future, the free scaling of CMOS-based electrical interconnection networks will eventually taper off due to Moore’s Law. These trends suggest that building all-electrical interconnects to meet the increased demand for low latency, high throughput networking will become increasingly impractical going forward. Integrating optical interconnects capable of supporting high bandwidth links and dynamic network topology reconfiguration offer a potential solution to scaling current networks. However, the insertion of photonic interconnection networks offers a massive design space in terms of network topology and control plane that is currently under-explored. The work in this dissertation is centered around the study and development of control plane challenges to aid in the eventual adoption of optically-enabled reconfigurable networks. We begin by exploring Flexspander, a novel reconfigurable network topology that combines the flexible random expander networks construction with topological-reconfigurability using optical circuit switching (OCS). By incorporating random expander graph construction, as opposed to other more symmetric reconfigurable topologies, Flexspander can be built with a broader range of electrical packet switch (EPS) radix, while retaining high throughput and low latency when coupled with multi-path routing. In addition, we propose a topology-routing co-optimization scheme to improve network robustness under traffic uncertainties. Our proposed scheme employs a two-step strategy: First, we optimize the topology and routing strategy by maximizing throughput and average packet hop count for the expected traffic patterns based on historical traffic patterns. Second, we employ a desensitization step on top of the topology and routing solution to lower performance degradation due to traffic variations. We demonstrate the effectiveness of our approach using production traces from Facebook's Altoona data center, and show that even with infrequent reconfigurations, our solution can attain performances within 15\% of an offline optimal oracle. Next, we study the problem of routing scheme design in reconfigurable networks, which is a more under-studied problem compared to routing design for static networks. We first perform theoretical analyses to first identify the key properties an effective routing protocol for reconfigurable networks should possess. Using findings from these theoretical analyses, we propose a lightweight but effective routing scheme that yields high performance for practical HPC and DC workloads when employed with reconfigurable networks. Finally, we explore two fundamental design problems in the optical reconfigurable network design. First, it investigates how different OCS placement in the physical network topology lead to different tradeoffs in terms of power consumption/cost, network performance, and scalability. Second, we investigate how network performance is affected by different reconfiguration periods to understand how frequency of topology reconfiguration affects application performance. Taken together, the work in this dissertation tackles several key challenges related to efficient control plane for reconfigurable network designs, with the goal of facilitating the eventual adoption of optically-enable reconfigurable networks in high performance systems.

As multistep, multilayer processing in semiconductor industry becomes more complex, the role of cleaning solutions and etching chemistries are becoming important in enhancing yield and in reducing defects. This thesis demonstrates successful formulations that exhibit copper and tungsten compatibility, and are capable of Inter Layer Dielectric (ILD) cleaning and selective Ti etching. The corrosion behavior of electrochemically deposited copper thin films in deareated and non-dearated cleaning solution containing hydrofluoric acid (HF) has been investigated. Potentiodynamic polarization experiments were carried out to determine active, active-passive, passive, and transpassive regions. Corrosion rates were calculated from tafel slopes. ICP-MS and potentiodynamic methods yielded comparable Cu dissolution rates. Interestingly, the presence of hydrogen peroxide in the cleaning solution led to more than an order of magnitude suppression of copper dissolution rate. We ascribe this phenomenon to the formation of interfacial CuO which dissolves at slower rate in dilute HF. A kinetic scheme involving cathodic reduction of oxygen and anodic oxidation of Cu0 and Cu+1 is proposed. It was determined that the reaction order kinetics is first order with respect to both HF and oxygen concentrations. The learnings from copper corrosion studies were leveraged to develop a wet etch/clean formulation for selective titanium etching. The introduction of titanium hard-mask (HM) for dual damascene patterning of copper interconnects created a unique application in selective wet etch chemistry. A formulation that addresses the selectivity requirements was not available and was developed during the course of this dissertation. This chemical formulation selectively strips Ti HM film and removes post plasma etch polymer/residue while suppressing the etch rate of tungsten, copper, silicon oxide, silicon carbide, silicon nitride, and carbon doped silicon oxide. Ti etching selectivity exceeding three orders of magnitude was realized. Surprisingly, it exploits the use of HF, a chemical well known for its SiO2 etching ability, along with a silicon precursor to protect SiO2. The ability to selectively etch the Ti HM without impacting key transistor/interconnect components has enabled advanced process technology nodes of today and beyond. This environmentally friendly formulation is now employed in production of advanced high-performance microprocessors and produced in a 3000 gallon reactor.

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